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Alburaih HA, Nazir S, Noor NA, Laref A, Saad H-E MM. Physical properties of vacancy-ordered double perovskites K 2TcZ 6 (Z = Cl, Br) for spintronics applications: DFT calculations. RSC Adv 2024; 14:1822-1832. [PMID: 38192306 PMCID: PMC10772539 DOI: 10.1039/d3ra07603b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 12/27/2023] [Indexed: 01/10/2024] Open
Abstract
Vacancy-ordered double perovskites (DPs) are emerging materials for spintronics due to their stable structures and non-toxic properties. In this study, we conducted a comprehensive investigation into the role of 4d electrons in Tc to understand their impact on the ferromagnetic properties of K2TcY6 (Y = Cl, Br). We have employed a modified Back and Johnson potential to assess electronic and magnetic characteristics and utilized the BoltzTraP code to investigate thermoelectric effects. Experimental lattice constants confirmed the presence of stable structures and formation energy estimates affirmed their thermodynamic stability. The Heisenberg model and density of electron states (DOS) at the Fermi level provides insights into Curie temperature and spin polarization. The presence of ferromagnetism is evident in the density of states, reflecting the transition of electron spins that support the exchange mechanism. The study delves into how electron functionality influences the control of ferromagnetism, considering exchange constants, exchange energies, hybridization process and the crystal field energies. Moreover, the exploitation of magnetic moments from Tc to K and Cl/Br sites takes precedence in driving ferromagnetism by exchanging electron spins rather than forming magnetic clusters. Additionally, to explore the optical characteristics of the compounds, we investigated their optical absorption, dielectric constants and refractive index within the energy range of 0-10 eV, ensuring absorption across both the visible and ultraviolet regions. Finally, we delve into the impact of the thermoelectric effect on both thermoelectric performance and spin functionality, taking into account factors such as the Seebeck coefficient, power factor, and electronic conductivity.
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Affiliation(s)
- Huda A Alburaih
- Physics Department, College of Science, Princess Nourah Bint Abdulrahman University 11671 Riyadh 12211 Saudi Arabia
| | - Sadia Nazir
- Department of Physics, University of Lahore Pakistan
| | - N A Noor
- Department of Physics, RIPHAH International University, Campus Lahore Pakistan
| | - A Laref
- Department of Physics and Astronomy, College of Science, King Saud University Riyadh 11451 King Saudi Arabia
| | - M Musa Saad H-E
- Department of Physics, College of Science and Arts in Al-Muthnib, Qassim University Al-Muthnib 51931 Saudi Arabia
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2
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Almalawi D, Lopatin S, Edwards PR, Xin B, Subedi RC, Najmi MA, Alreshidi F, Genovese A, Iida D, Wehbe N, Ooi BS, Ohkawa K, Martin RW, Roqan IS. Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition. ACS OMEGA 2023; 8:46804-46815. [PMID: 38107938 PMCID: PMC10720009 DOI: 10.1021/acsomega.3c06302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 11/02/2023] [Accepted: 11/06/2023] [Indexed: 12/19/2023]
Abstract
Here, we explore a catalyst-free single-step growth strategy that results in high-quality self-assembled single-crystal vertical GaN nanowires (NWs) grown on a wide range of common and novel substrates (including GaN, Ga2O3, and monolayer two-dimensional (2D) transition-metal dichalcogenide (TMD)) within the same chamber and thus under identical conditions by pulsed laser deposition. High-resolution transmission electron microscopy and scanning transmission electron microscopy (HR-STEM) and grazing incidence X-ray diffraction measurements confirm the single-crystalline nature of the obtained NWs, whereas advanced optical and cathodoluminescence measurements provide evidence of their high optical quality. Further analyses reveal that the growth is initiated by an in situ polycrystalline layer formed between the NWs and substrates during growth, while as its thickness increases, the growth mode transforms into single-crystalline NW nucleation. HR-STEM and corresponding energy-dispersive X-ray compositional analyses indicate possible growth mechanisms. All samples exhibit strong band edge UV emission (with a negligible defect band) dominated by radiative recombination with a high optical efficiency (∼65%). As all NWs have similar structural and optical qualities irrespective of the substrate used, this strategy will open new horizons for developing III-nitride-based devices.
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Affiliation(s)
- Dhaifallah Almalawi
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
- Department
of Physics, College of Science, Taif University, Taif 21944, Saudi Arabia
| | - Sergei Lopatin
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Paul R. Edwards
- Department
of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Bin Xin
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Ram C. Subedi
- Photonics
Laboratory, Division of Computer, Electrical and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Mohammed A. Najmi
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Fatimah Alreshidi
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Alessandro Genovese
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Daisuke Iida
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Nimer Wehbe
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Boon S. Ooi
- Photonics
Laboratory, Division of Computer, Electrical and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Kazuhiro Ohkawa
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Robert W. Martin
- Department
of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Iman S. Roqan
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
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3
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Alwadai N, Alharbi Z, Alreshidi F, Mitra S, Xin B, Alamoudi H, Upadhyaya K, Hedhili MN, Roqan IS. Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga 2O 3 Microflake/MnO Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12127-12136. [PMID: 36808944 DOI: 10.1021/acsami.2c18900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (<290 nm). In this work, we mitigate the aforementioned issues by demonstrating a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n WBGS heterojunction structure, operating under ambient conditions. Here, heterojunction structures based on p-type and n-type ultra-wide band gap WBGSs (i.e. both are characterized by energy gap ≥4.5 eV) are demonstrated for the first time; mainly p-type solution-processed manganese oxide quantum dots (MnO QDs) and n-type Sn-doped β-Ga2O3 microflakes. Highly crystalline p-type MnO QDs are synthesized using cost-effective and facile pulsed femtosecond laser ablation in ethanol (FLAL), while the n-type Ga2O3 microflakes are prepared by exfoliation. The solution-processed QDs are uniformly dropcasted on the exfoliated Sn-doped β-Ga2O3 microflakes to fabricate a p-n heterojunction photodetector, resulting in excellent solar-blind UV-C photoresponse characteristics (with a cutoff at ∼265 nm) being demonstrated. Further analyses using XPS demonstrate the good band alignment between p-type MnO QDs and n-type β-Ga2O3 microflakes with a type-II heterojunction. Superior photoresponsivity (922 A/W) is obtained under bias, while the self-powered responsivity is ∼86.9 mA/W. The fabrication strategy adopted in this study will provide a cost-effective means for the development of flexible and highly efficient UV-C devices suitable for energy-saving large-scale fixable applications.
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Affiliation(s)
- Norah Alwadai
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
- Department of Physics, College of Sciences, Princess Nourah Bint Abdulrahman University (PNU), Riyadh11671, Saudi Arabia
| | - Zohoor Alharbi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Fatimah Alreshidi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Somak Mitra
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Bin Xin
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Hadeel Alamoudi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Kishor Upadhyaya
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Mohamed N Hedhili
- Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Iman S Roqan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
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4
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Mera A, Nazir G, Mahmood Q, Kattan NA, Alshahrani T, Rehman A, Sultana H, Amin MA, Elhosiny Ali H. The bandgap engineering of double perovskites Cs2CuSbX6 (X = Cl, Br, I) for solar cell and thermoelectric applications. INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2022.110303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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5
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Regragui N, Ziati M, Boubekraoui A, Ez-Zahraouy H. Substitution effect by selenium and tellurium elements on electronic structures, optical and thermoelectric features of FeS2: DFT + U. COMPUT THEOR CHEM 2023. [DOI: 10.1016/j.comptc.2023.114019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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6
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Kattan NA, Rouf SA, Sfina N, Al-Anazy MM, Ullah H, Hakamy A, Mera A, Mahmood Q, Amin MA. Tuning of band gap by anion variation of double perovskites K2AgInX6 (X = Cl, Br) for solar cells and thermoelectric applications. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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7
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Ren R, Ren X, Liu H, Huang Y, Yuan W. Length-Dependent Photoelectric Property of ZnO Nanowires. NANOSCALE RESEARCH LETTERS 2022; 17:76. [PMID: 35980465 PMCID: PMC9388706 DOI: 10.1186/s11671-022-03715-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 08/08/2022] [Indexed: 06/15/2023]
Abstract
An interesting phenomenon that the photocurrent (the difference between illumination and dark current) of a ZnO nanowire (NW) under a specified voltage increased as its length increased in a certain range was observed previously and it was supposed to be mainly due to a special mean free path effect (MFPE) which caused a special distribution of dark electron density along the length with two higher electron density regions near the two ends of the NW, respectively, and the lower one in the middle part. However, such an explanation would be unreasonable and the true reasons should be the growing-process caused variation of the oxygen adsorption capacity along the NW length and the length-dependent lifetime of photogenerated carriers. Based on this understanding, a theoretical model to properly explain this phenomenon is proposed and the calculation results are in good agreement with the experimental data. This work has introduced an improved insight into the theory of the length-dependent photoelectric property of ZnO NWs.
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Affiliation(s)
- Ren Ren
- State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Xiaomin Ren
- State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
| | - Hao Liu
- State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yongqing Huang
- State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Weifang Yuan
- State Key Laboratory of Information Photonics and Optical Communications at BUPT, Zh. I. Alferov Russian-Chinese Joint Laboratory of Information Optoelectronics and Nanoheterostructures, BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing University of Posts and Telecommunications, Beijing, 100876, China
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8
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Alwadai N, Mitra S, Hedhili MN, Alamoudi H, Xin B, Alaal N, Roqan IS. Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33335-33344. [PMID: 34236856 DOI: 10.1021/acsami.1c03424] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating a novel enhanced solar-blind UV-C photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized by p-CuO micro-pyramids. Self-assembled catalyst-free p-CuO micro-pyramid arrays are fabricated on a pre-ablated Si substrate by pulsed laser deposition without a need for a catalyst layer or seeding, while the solution-processed n-ZnO QDs are synthesized by the femtosecond-laser ablation in liquid technique. The photodetector is fabricated by spray-coating ZnO QDs on a CuO micro-pyramid array. The photodetector performance is optimized via a p-n junction structure as both p-ZnO QDs and p-CuO micro-pyramid layers are characterized by wide band gap energies. Two photodetectors (with and without CuO micro-pyramids) are fabricated to show the role of p-CuO in enhancing the device performance. The n-ZnO QD/p-CuO micro-pyramid/Si photodetector is characterized by a superior photo-responsivity of ∼956 mA/W at 244 nm with a faster photoresponse (<80 ms) and 260 nm cut-off compared to ZnO QDs/Si photodetectors, confirming that the p-CuO micro-pyramids enhance the device performance. The self-powered photoresponse with a high photo-responsivity of ∼29 mA/W is demonstrated. These high-responsivity solar-bind UV-C photodetector arrays can be used for a wide range of applications.
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Affiliation(s)
- Norah Alwadai
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh 11671, Saudi Arabia
| | - Somak Mitra
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Mohamed Nejib Hedhili
- Imaging and Characterization Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hadeel Alamoudi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Bin Xin
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Naresh Alaal
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Iman S Roqan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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9
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Alwadai N, Ajia IA, Janjua B, Flemban TH, Mitra S, Wehbe N, Wei N, Lopatin S, Ooi BS, Roqan IS. Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:27989-27996. [PMID: 31343859 DOI: 10.1021/acsami.9b06195] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
One-dimensional (1D) structures-based UV-light-emitting diode (LED) has immense potential for next-generation applications. However, several issues related to such devices must be resolved first, such as expensive material and growth methods, complicated fabrication process, efficiency droop, and unavoidable metal contamination due to metal catalyst that reduces device efficiency. To overcome these obstacles, we have developed a novel growth method for obtaining a high-quality hexagonal, well-defined, and vertical 1D Gd-doped n-ZnO nanotube (NT) array deposited on p-GaN films and other substrates by pulsed laser deposition. By adopting this approach, the desired high optical and structural quality is achieved without utilizing metal catalyst. Transmission electron microscopy measurements confirm that gadolinium dopants in the target form a transparent in situ interface layer to assist in vertical NT formation. Microphotoluminescence (PL) measurements of the NTs reveal an intense ZnO band edge emission without a defect band, indicating high quality. Carrier dynamic analysis via time-resolved PL confirms that the emission of n-ZnO NTs/p-GaN LED structure is dominated significantly by the radiative recombination process without efficiency droop when high carrier density is injected optically. We developed an electrically pumped UV Gd-doped ZnO NTs/GaN LED as a proof of concept, demonstrating its high internal quantum efficiency (>65%). The demonstrated performance of this cost-effective UV LED suggests its potential application in large-scale device production.
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Affiliation(s)
- Norah Alwadai
- Department of Physics, College of Sciences , Princess Nourah Bint Abdulrahman University (PNU) , Riyadh 11671 , Saudi Arabia
| | | | | | - Tahani H Flemban
- Department of Physics, College of Science , Imam Abdulrahman Bin Faisal University (IAU) , Dammam 31441 , Saudi Arabia
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10
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Aravindh SA, Roqan IS. Structural, magnetic and electronic properties of two dimensional NdN: an ab initio study. RSC Adv 2019; 9:35917-35923. [PMID: 35528084 PMCID: PMC9074416 DOI: 10.1039/c9ra07429e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2019] [Accepted: 10/31/2019] [Indexed: 11/21/2022] Open
Abstract
We found that the peculiar magnetic properties of rare earth nitrides (RENs), mainly NdN films, make them suitable for a wide range of applications.
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Affiliation(s)
- S. Assa Aravindh
- King Abdullah University of Science and Technology (KAUST)
- Division of Physical Sciences and Engineering
- Saudi Arabia
| | - Iman S. Roqan
- King Abdullah University of Science and Technology (KAUST)
- Division of Physical Sciences and Engineering
- Saudi Arabia
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11
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Sasikala Devi AA, Roqan IS. Analysis on the energetics, magnetism and electronic properties in a 45° ZnO grain boundary doped with Gd. RSC Adv 2018; 8:13850-13856. [PMID: 35539352 PMCID: PMC9079841 DOI: 10.1039/c8ra00985f] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2018] [Revised: 01/18/2019] [Accepted: 04/09/2018] [Indexed: 12/03/2022] Open
Abstract
The structural stability and magnetic properties of a grain boundary (GB) formed by aligning two ZnO single crystals oriented at an angle of 45° is investigated by density functional theory, using generalized gradient approximation (GGA) and taking the U parameter into consideration for the 4f impurity states. We found that the GB is stable with no dangling bonds and inter-granular structures. The stability of defects such as Gd substituted to the Zn site (GdZn), Zn vacancy (VZn) and O vacancy (VO) as well as defect complexes GdZn–GdZn, GdZn–VZn, and GdZn–VO are analyzed using formation energy calculations. It is found that GdZn–GdZn clusters prefers to form at the GB. The spin polarization at the GdZn sites is too localized and the exchange coupling energy is insufficient to overcome the thermal fluctuations. However, we show that the presence of VZn increases the hybridization between p orbitals of O as well as d orbitals of Zn, which can assist in increasing the magnetic polarization of the system. This work advances the understanding of the ferromagnetism in Gd-doped ZnO, indicating that Gd clustering at the GB is not likely to contribute to the ferromagnetism. The structural stability and magnetic properties of a grain boundary (GB) formed by two ZnO single crystals oriented at 45° is investigated by density functional theory, using generalized gradient approximation (GGA) with Hubbard parameter (U).![]()
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Affiliation(s)
- Assa Aravindh Sasikala Devi
- King Abdullah University of Science and Technology
- Physical Science and Engineering (PSE) Division
- Saudi Arabia
| | - Iman S. Roqan
- King Abdullah University of Science and Technology
- Physical Science and Engineering (PSE) Division
- Saudi Arabia
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12
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Alwadai N, Haque MA, Mitra S, Flemban T, Pak Y, Wu T, Roqan I. High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37832-37838. [PMID: 29039640 DOI: 10.1021/acsami.7b09705] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
A high-performance vertically injected broadband UV-to-IR photodetector based on Gd-doped ZnO nanorods (NRs)/CH3NH3PbI3 perovskite heterojunction was fabricated on metal substrates. Our perovskite-based photodetector is sensitive to a broad spectral range, from ultraviolet to infrared light region (λ = 250-1357 nm). Such structure leads to a high photoresponsivity of 28 and 0.22 A/W, for white light and IR illumination, respectively, with high detectivity values of 1.1 × 1012 and 9.3 × 109 Jones. Optical characterizations demonstrate that the IR detection is due to intraband transition in the perovskite material. Metal substrate boosts carrier injection, resulting in higher responsivity compared to the conventional devices grown on glass, whereas the presence of Gd increases the ZnO NRs performance. For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a high-performance ingenious cost-effective UV-to-IR broadband photodetector design for large-scale applications.
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Affiliation(s)
- Norah Alwadai
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU) , Riyadh 11671, Saudi Arabia
| | - Md Azimul Haque
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
| | - Somak Mitra
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
| | - Tahani Flemban
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
| | - Yusin Pak
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
| | - Tom Wu
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
| | - Iman Roqan
- King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division , Thuwal 23955-6900, Saudi Arabia
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13
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Flemban TH, Haque MA, Ajia I, Alwadai N, Mitra S, Wu T, Roqan IS. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37120-37127. [PMID: 28925680 DOI: 10.1021/acsami.7b09645] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current-voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W-1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.
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Affiliation(s)
- Tahani H Flemban
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Md Azimul Haque
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Idris Ajia
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Norah Alwadai
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Somak Mitra
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Tom Wu
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
| | - Iman S Roqan
- King Abdullah University of Science and Technology (KAUST) , Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
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