Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

Enhancement of the Adhesive Strength between Ag Films and Mo Substrate by Ag Implanted via Ion Beam-Assisted Deposition

Silver-coated molybdenum is an optimum material selection to replace pure silver as solar cell interconnector. However, the low adhesive strength between Ag films and Mo substrate hinders the application of the interconnector, because it is difficult to form metallurgical bonding or compound in the film/substrate interface using conventional deposition. In order to improve the adhesion, some Ag particles were implanted into the surface of Mo substrate by ion beam-assisted deposition (IBAD) before the Ag films were deposited by magnetron sputtering deposition (MD). The objective of this work was to investigate the effect of different assisted ion beam energy on the film/substrate adhesive properties. In addition, the fundamental adhesion mechanism was illustrated. The results revealed that the adhesion between Ag films and Mo substrate could be greatly enhanced by IBAD. With the increase of the assisting ion beam energy, the adhesive strength first increased and then decreased, with the optimum adhesion being able to rise to 25.29 MPa when the energy of the assisting ion beam was 30 keV. It could be inferred that the combination of “intermixing layer” and “implanted layer” formed by the high-energy ion bombardment was the key to enhancing the adhesion between Ag films and Mo substrate effectively.

Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition

There is a great interest in various branches of the advanced materials industry for the development of novel methods (and improvements to existing ones) for the deposition of conformal ultrathin metallic films. In most of these applications, like enhanced solar absorbers and microelectronics, achieving the capacity to deposit a conformal thin film on a three-dimensional structure is an important condition. Plasma-enhanced atomic layer deposition (ALD) is known for its potential for growth of conformal thin films with a precise control over the thickness and its capability for deposition at relatively low temperatures (below 500 °C). This study evaluates the potential of plasma-enhanced ALD for growth of conformal nickel thin films, using bis(ethylcyclopentadienyl)nickel and nitrogen/hydrogen plasma as precursors. A comprehensive analysis of the structure, composition, and physical properties of the films was performed. The results indicate that conformal nickel films with low levels of impurity were successfully deposited on sapphire. The films had a roughness of R_a = 1.5 nm and were seen to be under strain. The deposited nickel had a hexagonal crystal structure, with a random in-plane orientation of the grains, while the grains had their c-axes oriented along the normal to the interface. These results pave the way for conformal low-temperature deposition of high-quality nickel thin films on three-dimensional structures.

Crucial role of reactive pulse-gas on a sputtered Zn3N2 thin film formation

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn₃N₂ thin films at room temperature without applying any additional energy sources.