Hexagonal Boron Nitride-Enhanced Optically Transparent Polymer Dielectric Inks for Printable Electronics

Solution-processable thin-film dielectrics represent an important material family for large-area, fully-printed electronics. Yet, in recent years, it has seen only limited development, and has mostly remained confined to pure polymers. Although it is possible to achieve excellent printability, these polymers have low (≈2-5) dielectric constants (ε r ). There have been recent attempts to use solution-processed 2D hexagonal boron nitride (h-BN) as an alternative. However, the deposited h-BN flakes create porous thin-films, compromising their mechanical integrity, substrate adhesion, and susceptibility to moisture. These challenges are addressed by developing a "one-pot" formulation of polyurethane (PU)-based inks with h-BN nano-fillers. The approach enables coating of pinhole-free, flexible PU+h-BN dielectric thin-films. The h-BN dispersion concentration is optimized with respect to exfoliation yield, optical transparency, and thin-film uniformity. A maximum ε r ≈ 7.57 is achieved, a two-fold increase over pure PU, with only 0.7 vol% h-BN in the dielectric thin-film. A high optical transparency of ≈78.0% (≈0.65% variation) is measured across a 25 cm2 area for a 10 μm thick dielectric. The dielectric property of the composite is also consistent, with a measured areal capacitance variation of <8% across 64 printed capacitors. The formulation represents an optically transparent, flexible thin-film, with enhanced dielectric constant for printed electronics.

A novel functional polyurethane as a dielectric layer for organic thin-film transistors

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

A novel polymer as a functional dielectric layer for OTFTs to improve the grain size of the pentacene semiconductor

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.