Transition-metal-nitride-based thin films as novel energy harvesting materials

Cr5.7Si2.3P8N24-A Chromium(+IV) Nitridosilicate Phosphate with Amphibole-Type Structure

The first nitridic analog of an amphibole mineral, the quaternary nitridosilicate phosphate Cr5.7Si2.3P8N24 was synthesized under high-pressure high-temperature conditions at 1400 °C and 12 GPa from the binary nitrides Cr2N, Si3N4 and P3N5, using NH4N3 and NH4F as additional nitrogen source and mineralizing agent, respectively. The crystal structure was elucidated by single-crystal X-ray diffraction with microfocused synchrotron radiation (C2/m, a=9.6002(19), b=17.107(3), c=4.8530(10) Å, β=109.65(3)°). The elemental composition was analyzed by energy dispersive X-ray spectroscopy. The structure consists of vertex-sharing PN4-tetrahedra forming zweier double chains and edge-sharing (Si,Cr)-centered octahedra forming separated ribbons. Atomic resolution scanning transmission electron microscopy shows ordered Si and Cr sites next to a disordered Si/Cr site. Optical spectroscopy indicates a band gap of 2.1 eV. Susceptibility measurements show paramagnetic behavior and support the oxidation state Cr+IV, which is confirmed by EPR. The comprehensive analysis expands the field of Cr-N chemistry and provides access to a nitride analog of one of the most prevalent silicate structures.

Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material

The interaction of light with collective charge oscillations, called plasmon-polariton, and with polar lattice vibrations, called phonon-polariton, are essential for confining light at deep subwavelength dimensions and achieving strong resonances. Traditionally, doped-semiconductors and conducting metal oxides (CMO) are used to achieve plasmon-polaritons in the near-to-mid infrared (IR), while polar dielectrics are utilized for realizing phonon-polaritons in the long-wavelength IR (LWIR) spectral regions. However, demonstrating low-loss plasmon- and phonon-polaritons in one host material will make it attractive for practical applications. Here, we demonstrate high-quality tunable short-wavelength IR (SWIR) plasmon-polariton and LWIR phonon-polariton in complementary metal-oxide-semiconductor compatible group III-V polar semiconducting scandium nitride (ScN) thin films. We achieve both resonances by utilizing n-type (oxygen) and p-type (magnesium) doping in ScN that allows modulation of carrier concentration from 5 × 10¹⁸ to 1.6 × 10²¹ cm^-3. Our work enables infrared nanophotonics with an epitaxial group III semiconducting nitride, opening the possibility for practical applications.

Nitridation of Cr–urea complex into nanocrystalline CrN and its antiferromagnetic magnetostructural transition study

An antiferromagnetic nanocrystalline CrN interstitial compound was prepared using Cr(NO3)3·9H2O and urea as starting materials.

Sodium rare earth metal amides Na3 RE(NH2)6 (RE = La–Nd, Er, Yb) from ammonothermal synthesis

The amides Na3 RE(NH2)6 have been obtained from the metals in supercritical ammonia under ammonobasic conditions at 573 K and 70 MPa for RE = La–Nd, and at 473 K and 40 MPa for RE = Er, Yb. All compounds are formed in the hot zone within a temperature gradient, indicating a retrograde solubility under the applied process conditions. These amides represent soluble intermediates in ammonothermal binary rare earth metal nitride synthesis. All compounds were obtained as microcrystalline powders, while single crystals of those amides containing the heavier rare earth metals could be isolated. The crystal structures were solved and refined from single-crystal and powder X-ray diffraction intensity data. The results of vibrational spectroscopy are reported. Thermal analysis measurements under inert gas atmosphere demonstrated a decomposition to the respective black binary rare earth metal nitrides REN1−δ .

Strain engineering of polar optical phonon scattering mechanism - an effective way to optimize the power-factor and lattice thermal conductivity of ScN

The tug-of-war between the thermoelectric power factor and the figure-of-merit complicates thermoelectric material selection, particularly for mid-to-high temperature thermoelectric materials. Approaches to reduce lattice thermal conductivity while maintaining a high-power factor are crucial in thermoelectric applications. Using strain engineering, we comprehensively investigated the microscopic mechanisms influencing the lattice thermal conductivity in this study. Scandium nitride (ScN) was chosen for this purpose since it has recently been discovered to be a potential mid-to-high temperature thermoelectric material. Our precise DFT+U calculations showed the exact electronic direct and indirect band gaps in ScN, which was subsequently subjected to compressive and tensile volume strain (up to 2%) within the crystal structure. Relevant thermoelectric properties such as Seebeck coefficient and electrical conductivity were obtained from both strained and unstrained ScN, whilst incorporating three key scattering sources, namely, ionized impurity (IMP), acoustic deformation potential (ADP), and polar optical phonon (POP). Based on the calculated scattering rates, we found that a POP scattering source is the dominant scattering mechanism that has a significant impact on transport properties at high temperatures. Our study revealed that modifying this POP scattering mechanism through strain in ScN has a considerable impact on the variation of lattice thermal conductivity without much reduction in the thermoelectric power factor values. A detailed description was provided with a focus on understanding the effects of strain on the scattering rates and thermoelectric properties of ScN.

Synthesis of Zn2NbN3ternary nitride semiconductor with wurtzite-derived crystal structure

Binary III-N nitride semiconductors with wurtzite crystal structure such as GaN and AlN have been long used in many practical applications ranging from optoelectronics to telecommunication. The structurally related ZnGeN₂or ZnSnN₂derived from the parent binary compounds by cation mutation (elemental substitution) have recently attracted attention, but such ternary nitride materials are mostly limited to II-IV-N₂compositions. This paper demonstrates synthesis and characterization of zinc niobium nitride (Zn₂NbN₃)-a previously unreported II₂-V-N₃ternary nitride semiconductor. The Zn₂NbN₃thin films are synthesized using a one-step adsorption-controlled growth that locks in the targeted stoichiometry, and a two-step deposition/annealing method that suppresses the loss of Zn and N. Measurements indicate that this sputtered Zn₂NbN₃crystalizes in cation-disordered wurtzite-derived structure, in contrast to chemically related rocksalt-derived Mg₂NbN₃compound, also synthesized here for comparison using the two-step method. The estimated wurtzite lattice parameter ratio of Zn₂NbN₃is 1.55, and the optical absorption onset is at 2.1 eV. Both of these values are lower compared to published Zn₂NbN₃computational values ofc/a= 1.62 andE_g= 3.5-3.6 eV. Additional theoretical calculations indicate that this difference is due to cation disorder in experimental samples, suggesting a way to tune the structural parameters and the resulting properties of heterovalent ternary nitride materials. Overall, this work expands the wurtzite family of nitride semiconductors to include Zn₂NbN₃, and suggests that related II₂-V-N₃and other ternary nitrides should be possible to synthesize.

Na2La4(NH2)14·NH3, a lanthanum-rich intermediate in the ammonothermal synthesis of LaN and the effect of ammonia loss on the crystal structure

Single crystals of Na2La4(NH2)14·NH3 were obtained from supercritical ammonia under ammonobasic conditions at a temperature of 573 K and 120 MPa pressure. It represents a lanthanum-rich intermediate in the ammonothermal synthesis of LaN. Upon aging, the title compound loses the crystal ammonia, resulting in pale crystals of Na2La4(NH2)14, the original space group P212121 being retained in a very similar unit cell. However, the crystal structure reacts to subtle changes in the composition as well as to the modified coordination of particularly the sodium cations interconnecting lanthanum amide layers within a third dimension. Results of Raman spectroscopic studies are reported. The observations of thermal analysis measurements indicating the formation of lanthanum nitride, in combination with the observed retrograde solubility in liquid ammonia, contribute to the knowledge of the ammonothermal crystal growth of lanthanum nitride.

Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of TMN compounds (i.e., Ta_xN_y), several phases typically exist, many with similar crystal structures that are difficult to distinguish by conventional X-ray diffraction or other bulk characterization means. In this work, we demonstrate the combined power of high-resolution transmission and aberration-corrected scanning transmission electron microscopy for definitive phase identification of tantalum nitrides with different N-sublattice ordering. Analysis of molecular beam epitaxy-grown γ-Ta₂N films on SiC substrates shows that the films are γ phase, threading dislocation-free, and Ta-deficient. The lack of Ta manifests as ordered Ta vacancy planar defects oriented in the plane perpendicular to the [0001] growth direction and accounts for the substoichiometry. Optimization of the growth parameters should reduce the Ta vacancy concentration, and alternatively, exploitation of the attractive nature of the Ta vacancies may enable novel planar structures. These findings serve as an important first step in applying this epitaxial TMN material for new electronic and superconducting device structures.

On the crystal chemistry of inorganic nitrides: crystal-chemical parameters, bonding behavior, and opportunities in the exploration of their compositional space

The scarcity of nitrogen in Earth's crust, combined with challenging synthesis, have made inorganic nitrides a relatively unexplored class of compounds compared to their naturally abundant oxide counterparts. To facilitate exploration of their compositional space via a priori modeling, and to help a posteriori structure verification not limited to inferring the oxidation state of redox-active cations, we derive a suite of bond-valence parameters and Lewis acid strength values for 76 cations observed bonding to N3-, and further outline a baseline statistical knowledge of bond lengths for these compounds. Examination of structural and electronic effects responsible for the functional properties and anomalous bonding behavior of inorganic nitrides shows that many mechanisms of bond-length variation ubiquitous to oxide and oxysalt compounds (e.g., lone-pair stereoactivity, the Jahn-Teller and pseudo Jahn-Teller effects) are similarly pervasive in inorganic nitrides, and are occasionally observed to result in greater distortion magnitude than their oxide counterparts. We identify promising functional units for exploring uncharted chemical spaces of inorganic nitrides, e.g. multiple-bond metal centers with promise regarding the development of a post-Haber-Bosch process proceeding at milder reaction conditions, and promote an atomistic understanding of chemical bonding in nitrides relevant to such pursuits as the development of a model of ion substitution in solids, a problem of great relevance to semiconductor doping whose solution would fast-track the development of compound solar cells, battery materials, electronics, and more.

A van der Waals heterostructure of MoS2/MoSi2N4: a first-principles study

Motivated by the successful preparation of MoSi₂N₄ monolayers in the last year [Y.-L. Hong et al., Science, 2020, 369, 670–674], the structural, electronic and optical properties of MoS₂/MoSi₂N₄ heterostructure are investigated.

Carbon Dioxide Conversion with High-Performance Photocatalysis into Methanol on NiSe2/WSe2

Climate change has been recognized as a threatening environmental problem around the world. CO2 is considered to be the main component of greenhouse gas. By using solar energy (light energy) as the energy source, photocatalytic conversion is one of the most effective technologies to reveal the clean utilization of CO2. Herein, using sodium tungstate, nickel nitrate, and selenium powder as the main raw materials, the high absorption and utilization of WSe2 for light energy and the high intrinsic conductivity of NiSe2 were combined by a hydrothermal method to prepare NiSe2/WSe2 and hydrazine hydrate as the reductant. Then, high-performance NiSe2/WSe2 photocatalytic material was prepared. The characterization results of XRD, XPS, SEM, specific surface area, and UV-visible spectroscopy show that the main diffraction peak of synthesized NiSe2/WSe2 is sharp, which basically coincides with the standard card. After doping NiSe2, the morphology of WSe2 was changed from a flake shape to smaller and more trivial crystal flakes, which demonstrates richer exposed edges and more active sites; the specific surface area increased from 3.01 m2 g−1 to 8.52 m2 g−1, and the band gap becomes wider, increasing from 1.66 eV to 1.68 eV. The results of a photocatalytic experiment show that when the prepared NiSe2/WSe2 catalyst is used to conduct photocatalytic reduction of CO2, the yield of CH3OH is significantly increased. After reaction for 10 h, the maximum yield could reach 3.80 mmol g−1, which presents great photocatalytic activity.

The Effect of Point Defects on the Electronic Density of States of ScMN2-Type (M = V, Nb, Ta) Phases

ScMN2-type (M = V, Nb, Ta) phases are layered materials that have been experimentally reported for M = Ta and Nb. They are narrow-bandgap semiconductors with potentially interesting thermoelectric properties. Point defects such as dopants and vacancies largely affect these properties, motivating the need to investigate these effects. In particular, asymmetric peak features in the density of states (DOS) close to the highest occupied state is expected to increase the Seebeck coefficient. Here, we used first principles calculations to study the effects of one vacancy or one C, O, or F dopant on the DOS of the ScMN2 phases. We used density functional theory to calculate formation energy and the density of states when a point defect is introduced in the structures. In the DOS, asymmetric peak features close to the highest occupied state were found as a result of having a vacancy in all three phases. Furthermore, one C dopant in ScTaN2, ScNbN2, and ScVN2 implies a shift of the highest occupied state into the valence band, while one O or F dopant causes a shift of the highest occupied state into the conduction band.

N-H Bond Formation in a Manganese(V) Nitride Yields Ammonia by Light-Driven Proton-Coupled Electron Transfer

A method for the reduction of a manganese nitride to ammonia is reported, where light-driven proton-coupled electron transfer enables the formation of weak N-H bonds. Photoreduction of (sal^tBu)Mn^VN to ammonia and a Mn(II) complex has been accomplished using 9,10-dihydroacridine and a combination of an appropriately matched photoredox catalyst and weak Brønsted acid. Acid-reductant pairs with effective bond dissociation free energies between 35 and 46 kcal/mol exhibited high efficiencies. This light-driven method may provide a blueprint for new approaches to catalytic homogeneous ammonia synthesis under ambient conditions.

Synthesis and characterization of single-phase epitaxial Cr2N thin films by reactive magnetron sputtering

Cr₂N is commonly found as a minority phase or inclusion in stainless steel, CrN-based hard coatings, etc. However, studies on phase-pure material for characterization of fundamental properties are limited. Here, Cr₂N thin films were deposited by reactive magnetron sputtering onto (0001) sapphire substrates. X-ray diffraction and pole figure texture analysis show Cr₂N (0001) epitaxial growth. Scanning electron microscopy imaging shows a smooth surface, while transmission electron microscopy and X-ray reflectivity show a uniform and dense film with a density of 6.6 g cm^-3, which is comparable to theoretical bulk values. Annealing the films in air at 400 °C for 96 h shows little signs of oxidation. Nano-indentation shows an elastic-plastic behavior with H = 18.9 GPa and E _r = 265 GPa. The moderate thermal conductivity is 12 W m^-1 K^-1, and the electrical resistivity is 70 μΩ cm. This combination of properties means that Cr₂N may be of interest in applications such as protective coatings, diffusion barriers, capping layers and contact materials.

Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds

Scandium nitride has recently gained interest as a prospective compound for thermoelectric applications due to its high Seebeck coefficient. However, ScN also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a search for other semiconductor materials that share the electronic structure features of ScN, but which have a lower thermal conductivity. Thus, the focus of our study is to predict the existence and stability of such materials among inherently layered equivalent ternaries that incorporate heavier atoms for enhanced phonon scattering and to calculate their thermoelectric properties. Using density functional theory calculations, the phase stability of TiMgN₂, ZrMgN₂ and HfMgN₂ compounds has been calculated. From the computationally predicted phase diagrams for these materials, we conclude that all three compounds are stable in these stoichiometries. The stable compounds may have one of two competing crystal structures: a monoclinic structure (LiUN₂ prototype) or a trigonal superstructure (NaCrS₂ prototype; R 3 ¯ mH). The band structure for the two competing structures for each ternary is also calculated and predicts semiconducting behavior for all three compounds in the NaCrS₂ crystal structure with an indirect band gap and semiconducting behavior for ZrMgN₂ and HfMgN₂ in the monoclinic crystal structure with a direct band gap. Seebeck coefficient and power factors are also predicted, showing that all three compounds in both the NaCrS₂ and the LiUN₂ structures have large Seebeck coefficients. The predicted stability of these compounds suggests that they can be synthesized by, e.g., physical vapor deposition.