Radical induced intermolecular linkage and energy level modifications of a porphyrin monolayer

Connecting Solution-Phase to Single-Molecule Properties of Ni(Salophen)

We present a strong correlation of the Ni(salophen) structure and properties measured in single-molecule vs bulk quantities and in ultra high vacuum vs solution phase. Under a scanning tunneling microscope (STM), Ni(salophen) forms a self-assembled monolayer (SAM) on Au(111) at 23 °C with molecular structure identical to that of the X-ray crystallographic measurement. The HOMO and LUMO levels are determined using elastic tunneling spectroscopy at the single-molecule level with confirmation by monolayer-quantity ultraviolet photoelectron spectroscopy (UPS) and by cyclic voltammetry (CV) measurements. The STM-determined HOMO-LUMO gap of 3.28 eV and (HOMO-1)-HOMO gap of 0.36 eV form a new foundation for the selection of hybrid functionals with a simple basis set to be effective in accurately calculating single-molecule Ni(salophen) frontier MO levels. Our results suggest that microscopy-based experiments on a surface, along with free-molecule gas-phase calculations, can provide useful insights into the physical properties of metal(salen) complexes, especially when such direct measurements are not available in solution.

Structures and properties of porphyrin-based film materials part I. The films obtained via vapor-assisted methods

This review is devoted to porphyrin-based film materials. Various technological and scientific applications of ones are close to surface and interface related phenomena. In the part I of review the following topics are discussed the recent progress in field of submonolayers, monolayers and multilayers films on the vapor-solid interfaces, including results on (i) conformational behavior of adsorbed molecules, (ii) aggregation and surface phases formation, (iii) on-surface coordination networks, and (iv) on-surface chemical reactions. The examples of combined approaches to developing materials and porphyrin-based film materials application are also presented.