Dressing of Cu Atom over Nickel Cluster Stimulating the Poisoning-Free CO Oxidation: An Ab Initio Study

In this work using first-principles calculations based on spin-polarized density functional theory (DFT), the role of the Cu atom in degrading the poisoning of carbon monoxide (CO) over Ni_nCu clusters is unveiled. The search has been initiated with the examination of structural, magnetic, and electronic properties of Ni_n+1 and Ni_nCu clusters (1 ≤ n ≤ 12). X-ray absorption near-edge structure (XANES) spectra of Ni K-edge are computed to extract the information on the oxidation states and coordination environment of metal sites of the clusters. This study is operated with the two forms of dispersion corrections, i.e., D2 and D3, with standard DFT (with LDA and GGA functionals) for the consideration of van der Waals interactions during CO adsorption. The PBE and PBE-D3 approaches are found to be capable of yielding the experimentally observed preferential site for CO adsorption. The effect of spin-polarization on the reactivity of transition metals (TMs) toward CO adsorption is crucially assessed by the electronic reactivity descriptors such as d-band center, d-band width, and fractional filling of d-band using a spin-polarized d-band center model. The effective charge transfer from Cu to Ni atoms makes Ni atoms more efficient of charge and is attributed to the degrading adsorption of CO over Ni_nCu clusters. The Ni₁₂Cu cluster stands out with good CO oxidation activity for the Langmuir-Hinshelwood (L-H) reaction pathway.

Enhancing the methane steam reforming catalytic performance of Ni monolithic catalysts via Ni–Re surface alloying

The methane steam reforming catalytic performance of Ni monolithic catalysts was effectively enhanced by coating of a Ni–Re bimetallic layer because the Re atoms promoted hydrogen adsorption, thereby suppressing the oxidation of the adjacent Ni atoms.

Adsorbate interactions on the GaN(0001) surface and their effect on diffusion barriers and growth morphology

Studying the adsorbate interactions on a surface helps in understanding the growing surface morphologies and calculating the effective surface diffusion barriers. We study the interaction between Ga-Ga, N-N and Ga-N adatom pairs on the polar GaN(0001) surface using ab initio calculations based on density functional theory. The interaction energy between two adatoms on the surface does not seem to follow definite trends with increasing distance between the adatoms. The presence of a number of possible reconstructions on clean GaN(0001) and periodic effects due to the finite size complicate the analysis of the interactions. Various components of the total interaction energy are separated. We find that there is a large substrate lattice distortion caused due to Ga and N adatoms. The resulting elastic interaction is a major component of the interactions between the adatoms on the GaN(0001) surface. The dipolar interaction is much smaller in magnitude. We also evaluate the component of the interaction energy due to the substrate-mediated electronic interactions. The barriers for surface hopping of adatoms are significantly modified in the presence of other adatoms. We identify several possible surface hopping processes for Ga and N adatoms and calculate their barriers. In particular, we find that the N adatom has a lower barrier to move to an adjoining site on the other side of a neighboring Ga adatom. Kinetic Monte Carlo simulations are performed to see the effect of adatom interactions on the growing surface morphologies of GaN(0001). At the submonolayer growth stage, the fast diffusion of N adatoms located near Ga adatoms leads to more regular island features. In this way, we illustrate the role of adatom interactions in the initial surface nucleation and the morphologies of the growing GaN(0001) film.

Theoretical insights into the effect of terrace width and step edge coverage on CO adsorption and dissociation over stepped Ni surfaces

We rationalized Ni(211) as a representative model for stepped surfaces and explored the effect of coverage on CO activation.