Lattice defect-formulated ferromagnetism and UV photo-response in pure and Nd, Sm substituted ZnO thin films

The induction of charge and spin in diluted magnetic semiconductor ZnO is explored for spintronic devices and its wide direct band gap (3.37 eV) and large exciton binding energy (60 meV) exhibit potential in UV photodetectors. We reported the ferromagnetic and optical properties of pure ZnO, Zn_0.97Nd_0.03O and Zn_0.97Sm_0.03O thin films. These thin films were synthesized by a metallo-organic decomposition method and annealed at 500 °C for 7 h. Rietveld refinement of the XRD data results in a wurtzite ZnO structure with Nd, Sm doping. The dopants and nanoparticle size are responsible for wurtzite structural deformation, inducing lattice strain effect, which may influence the band gap energy and high-T_C ferromagnetism of ZnO. The average size of ZnO nanoparticles with Nd, Sm doping is 10 nm, confirmed with atomic force microscopy. The Raman spectra confirm the wurtzite structure of ZnO with crystalline quality and lattice defect formation with dopant Nd, Sm ions. A near-band-edge emission due to band gap energy is evaluated with photoluminescence spectra, which also involved multiple visible emissions due to oxygen vacancies. The oxygen vacancies-mediated magnetic interactions impart room temperature ferromagnetism in pure ZnO which is enhanced with Nd, Sm doping. The electron paramagnetic resonance spectra revealed the effects of defects and unpaired electrons responsible for observed room temperature ferromagnetism. The zero field cooling and field cooling magnetic measurements include antiferromagnetic interactions without any spin-glass formation. The observed ferromagnetism also correlates with first principle calculations reported for Nd, Sm-doped ZnO and suggests long-range ferromagnetic ordering attributed to defect carriers. The Nd, Sm doping into ZnO thin films significantly enhances absorption in the UV region and suggests its usability for UV detectors. Under UV irradiation (λ = 325 nm), the value of photocurrent in Nd, Sm:ZnO thin films is highly enhanced for possible use in UV sensors.

Local symmetry breaking in SnO2 nanocrystals with cobalt doping and its effect on optical properties

X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to study the structural and morphological characteristics of cobalt doped tin(iv) oxide (Sn1-xCoxO2; 0 ≤ x ≤ 0.04) nanocrystals synthesized by a chemical co-precipitation technique. Electronic structure analysis using X-ray photoemission spectroscopy (XPS) shows the formation of tin interstitials (Sni) and reduction of oxygen vacancies (VO) in the host lattice on Co doping and that the doped Co exists in mixed valence states of +2 and +3. Using XRD, the preferential position of the Sni and doped Co in the unit cell of the nanocrystals have been estimated. Rietveld refinement of XRD data shows that samples are of single phase and variation of lattice constants follows Vegard's law. XRD and TEM measurements show that the crystallite size of the nanocrystals decrease with increase in Co doping concentration. SAED patterns confirm the monocrystalline nature of the samples. The study of the lattice dynamics using Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy shows the existence of many disorder activated forbidden optical phonon modes, along with the corresponding classical modes, signifying Co induced local symmetry breaking in the nanocrystals. UV-Vis spectroscopy shows that the optical band gap has red shifted with increase in doping concentration. The study of Urbach energy confirms the increase in disorder in the nanocrystals with Co doping. Local symmetry breaking induced UV emission along with violet, blue and green luminescence has been observed from the PL study. The spectral contribution of UV emission decreases and green luminescence increases with increase in doping. Using PL, in conjunction with Raman spectroscopy, the type of oxygen vacancy induced in the nanocrystals on Co doping has been confirmed and the position of the defect levels in the forbidden zone (w.r.t. the optical band gap) has been studied.

An insight into the origin of room-temperature ferromagnetism in SnO2 and Mn-doped SnO2 quantum dots: an experimental and DFT approach

SnO₂ and Mn-doped SnO₂ single-phase tetragonal crystal structure quantum dots (QDs) of uniform size with control over dopant composition and microstructure were synthesized using the high pressure microwave synthesis technique. On a broader vision, we systematically investigated the influence of dilute Mn ions in SnO₂ under the strong quantum confinement regime through various experimental techniques and density functional theoretical (DFT) calculations to disclose the physical mechanism governing the observed ferromagnetism. DFT calculations revealed that the formation of the stable (001) surface was much more energetically favorable than that of the (100) surface, and the formation energy of the oxygen vacancies in the stable (001) surface was comparatively higher in the undoped SnO₂ QDs. X-ray photoelectron spectroscopy (XPS) and first-principles modeling of doped QDs revealed that the lower doping concentration of Mn favored the formation of MnO-like (Mn²⁺) structures in defect-rich areas and the higher doping concentration of Mn led to the formation of multiple configurations of Mn (Mn²⁺ and Mn³⁺) in the stable surfaces of SnO₂ QDs. Electronic absorption spectra indicated the characteristic spin allowed ligand field transitions of Mn²⁺ and Mn³⁺ and the red shift in the band gap. DFT calculations clearly indicated that only the substitutional dopant antiferromagnetic configurations were more energetically favorable. The gradual increase of magnetization at a low level of Mn-doping could be explained by the prevalence of antiferromagnetic manganese-vacancy pairs. Higher concentrations of Mn led to the appearance of ferromagnetic interactions between manganese and oxygen vacancies. The increase in the concentration of metallic dopants caused not just an increase in the total magnetic moment of the system but also changed the magnetic interactions between the magnetic moments on the metal ions and oxygen. The present study provides new insight into the fundamental understanding of the origin of ferromagnetism in transition metal-doped QDs.

The deposition of thin films of cadmium zinc sulfide Cd1-x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Thin films of Cd_1-x Zn _x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C₂H₅OCS₂)₂] and zinc ethylxanthato [Zn(C₂H₅OCS₂)₂] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250 °C for 1 h under N₂. The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 ≤ x ≤ 0.15 and at x = 1). The resistivity of Cd_1-x Zn _x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd_1-x Zn _x S thin films by a spin coating/melt method from xanthato precursors.

Understanding the origin of ferromagnetism in Er-doped ZnO system

The present study reports the structural, optical and magnetic properties of ZnO with doping of Er ions at dilute concentrations (0 ≤ x ≤ 0.05).

Size–strain distribution analysis of SnO2 nanoparticles and their multifunctional applications as fiber optic gas sensors, supercapacitors and optical limiters

SnO₂ nanoparticles (NPs) were prepared by a wet chemical method and characterized by X-ray diffraction (XRD) (rutile tetragonal), Fourier transform infrared spectroscopy (FTIR) (Sn–O, 657 cm⁻¹) and micro Raman spectroscopy (Sn–O, 635 cm⁻¹).