Calculations of the active mode and energetic barrier to electron attachment to CF3 and comparison with kinetic modeling of experimental results

Thermal rate constants for electron attachment to N2O: An example of endothermic attachment

Rate constants for dissociative electron attachment to N₂O yielding O^- have been measured as a function of temperature from 400 K to 1000 K. Detailed modeling of kinetics was needed to derive the rate constants at temperatures of 700 K and higher. In the 400 K-600 K range, upper limits are given. The data from 700 K to 1000 K follow the Arrhenius equation behavior described by 2.4 × 10^-8 e^{-0.288 eV/kT} cm³ s^-1. The activation energy derived from the Arrhenius plot is equal to the endothermicity of the reaction. However, calculations at the CCSD(T)/complete basis set level suggest that the lowest energy crossing between the neutral and anion surfaces lies 0.6 eV above the N₂O equilibrium geometry and 0.3 eV above the endothermicity of the dissociative attachment. Kinetic modeling under this assumption is in modest agreement with the experimental data. The data are best explained by attachment occurring below the lowest energy crossing of the neutral and valence anion surfaces via vibrational Feshbach resonances.

Anion-Initiated Trifluoromethylation by TMSCF3: Deconvolution of the Siliconate-Carbanion Dichotomy by Stopped-Flow NMR/IR

The mechanism of CF3 transfer from R3SiCF3 (R = Me, Et, iPr) to ketones and aldehydes, initiated by M+X- (<0.004 to 10 mol %), has been investigated by analysis of kinetics (variable-ratio stopped-flow NMR and IR), 13C/2H KIEs, LFER, addition of ligands (18-c-6, crypt-222), and density functional theory calculations. The kinetics, reaction orders, and selectivity vary substantially with reagent (R3SiCF3) and initiator (M+X-). Traces of exogenous inhibitors present in the R3SiCF3 reagents, which vary substantially in proportion and identity between batches and suppliers, also affect the kinetics. Some reactions are complete in milliseconds, others take hours, and others stall before completion. Despite these differences, a general mechanism has been elucidated in which the product alkoxide and CF3- anion act as chain carriers in an anionic chain reaction. Silyl enol ether generation competes with 1,2-addition and involves protonation of CF3- by the α-C-H of the ketone and the OH of the enol. The overarching mechanism for trifluoromethylation by R3SiCF3, in which pentacoordinate siliconate intermediates are unable to directly transfer CF3- as a nucleophile or base, rationalizes why the turnover rate (per M+X- initiator) depends on the initial concentration (but not identity) of X-, the identity (but not concentration) of M+, the identity of the R3SiCF3 reagent, and the carbonyl/R3SiCF3 ratio. It also rationalizes which R3SiCF3 reagent effects the most rapid trifluoromethylation, for a specific M+X- initiator.

Contrast between the mechanisms for dissociative electron attachment to CH3SCN and CH3NCS

The kinetics of thermal electron attachment to methyl thiocyanate (CH₃SCN), methyl isothiocyanate (CH₃NCS), and ethyl thiocyanate (C₂H₅SCN) were measured using flowing afterglow-Langmuir probe apparatuses at temperatures between 300 and 1000 K. CH₃SCN and C₂H₅SCN undergo inefficient dissociative attachment to yield primarily SCN^- at 300 K (k = 2 × 10^-10 cm³ s^-1), with increasing efficiency as temperature increases. The increase is well described by activation energies of 0.17 eV (CH₃SCN) and 0.14 eV (C₂H₅SCN). CN^- product is formed at <1% branching at 300 K, increasing to ∼30% branching at 1000 K. Attachment to CH₃NCS yields exclusively SCN^- ionic product but at a rate at 300 K that is below our detection threshold (k < 10^-12 cm³ s^-1). The rate coefficient increases rapidly with increasing temperature (k = 6 × 10^-11 cm³ s^-1 at 600 K), in a manner well described by an activation energy of 0.51 eV. Calculations at the B3LYP/def2-TZVPPD level suggest that attachment to CH₃SCN proceeds through a dissociative state of CH₃SCN^-, while attachment to CH₃NCS initially forms a weakly bound transient anion CH₃NCS^-* that isomerizes over an energetic barrier to yield SCN^-. Kinetic modeling of the two systems is performed in an attempt to identify a kinetic signature differentiating the two mechanisms. The kinetic modeling reproduces the CH₃NCS data only if dissociation through the transient anion is considered.