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Zhang G, Guo S, Zhang T, Wang Q, Zhang Z, Liu J, Wang S, Qiao S. Exploring the pyro-phototronic effect for giant lateral photoresponse in an ITO/CdS/Si heterojunction position-sensitive detector. OPTICS EXPRESS 2024; 32:17058-17071. [PMID: 38858898 DOI: 10.1364/oe.522027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Accepted: 04/09/2024] [Indexed: 06/12/2024]
Abstract
The demand for a high-performance position sensitive detector (PSD), a novel type of photoelectric sensor, is increasing due to advancements in digitization and automation technology. Cadmium sulfide (CdS), a non-centrosymmetric material, holds significant potential in photoelectric devices. However, the pyroelectric effect of CdS in PSDs and its influence on lateral photoresponse are still unknown. In this work, we fabricated an ITO/CdS/Si heterojunction using chemical bath deposition (CBD) and investigated the pyro-phototronic effect under nonuniform illumination. The theory of electron-hole pairs' generation, separation, and carrier diffusion was carefully considered to understand the underlying mechanisms. Our experimental findings revealed that the device exhibited an exceptionally high position sensitivity (PS) of 1061.3 mV/mm, surpassing the generally observed PS of 655.1 mV/mm induced by single photovoltaic effect by 160.5%. Meanwhile, the PSD demonstrated rapid response times of 0.01 and 0.04 ms, respectively. Moreover, the influence of ambient temperature and electrode distance on the pyro-phototronic effect was well analyzed. Notably, the PSD exhibited remarkable stability even at ambient temperatures up to 150 °C. Despite the considerable working distance of 11 mm, the PS of the PSD remained at 128.99 mV/mm. These findings provide valuable theoretical and experimental foundations for optimizing the design and implementation of high-performance large working distance PSDs.
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Park J, Lee Y, Cho S, Choe A, Yeom J, Ro YG, Kim J, Kang DH, Lee S, Ko H. Soft Sensors and Actuators for Wearable Human-Machine Interfaces. Chem Rev 2024; 124:1464-1534. [PMID: 38314694 DOI: 10.1021/acs.chemrev.3c00356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Haptic human-machine interfaces (HHMIs) combine tactile sensation and haptic feedback to allow humans to interact closely with machines and robots, providing immersive experiences and convenient lifestyles. Significant progress has been made in developing wearable sensors that accurately detect physical and electrophysiological stimuli with improved softness, functionality, reliability, and selectivity. In addition, soft actuating systems have been developed to provide high-quality haptic feedback by precisely controlling force, displacement, frequency, and spatial resolution. In this Review, we discuss the latest technological advances of soft sensors and actuators for the demonstration of wearable HHMIs. We particularly focus on highlighting material and structural approaches that enable desired sensing and feedback properties necessary for effective wearable HHMIs. Furthermore, promising practical applications of current HHMI technology in various areas such as the metaverse, robotics, and user-interactive devices are discussed in detail. Finally, this Review further concludes by discussing the outlook for next-generation HHMI technology.
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Affiliation(s)
- Jonghwa Park
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Youngoh Lee
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Seungse Cho
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Ayoung Choe
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Jeonghee Yeom
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Yun Goo Ro
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Jinyoung Kim
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Dong-Hee Kang
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Seungjae Lee
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
| | - Hyunhyub Ko
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City 44919, Republic of Korea
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Mousavi A, Rahimnejad M, Azimzadeh M, Akbari M, Savoji H. Recent advances in smart wearable sensors as electronic skin. J Mater Chem B 2023; 11:10332-10354. [PMID: 37909384 DOI: 10.1039/d3tb01373a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Flexible and multifunctional electronic devices and soft robots inspired by human organs, such as skin, have many applications. However, the emergence of electronic skins (e-skins) or textiles in biomedical engineering has made a great revolution in a myriad of people's lives who suffer from different types of diseases and problems in which their skin and muscles lose their appropriate functions. In this review, recent advances in the sensory function of the e-skins are described. Furthermore, we have categorized them from the sensory function perspective and highlighted their advantages and limitations. The categories are tactile sensors (including capacitive, piezoresistive, piezoelectric, triboelectric, and optical), temperature, and multi-sensors. In addition, we summarized the most recent advancements in sensors and their particular features. The role of material selection and structure in sensory function and other features of the e-skins are also discussed. Finally, current challenges and future prospects of these systems towards advanced biomedical applications are elaborated.
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Affiliation(s)
- Ali Mousavi
- Institute of Biomedical Engineering, Department of Pharmacology and Physiology, Faculty of Medicine, University of Montreal, Montreal, QC, H3T 1J4, Canada.
- Research Center, Sainte-Justine University Hospital, Montreal, QC, H3T 1C5, Canada
- Montreal TransMedTech Institute, Montreal, QC, H3T 1J4, Canada
| | - Maedeh Rahimnejad
- Department of Cariology, Restorative Sciences, and Endodontics, School of Dentistry, University of Michigan, Ann Arbor, Michigan, USA
| | - Mostafa Azimzadeh
- Laboratory for Innovations in Micro Engineering (LiME), Department of Mechanical Engineering, University of Victoria, Victoria, BC, V8P 5C2, Canada
| | - Mohsen Akbari
- Laboratory for Innovations in Micro Engineering (LiME), Department of Mechanical Engineering, University of Victoria, Victoria, BC, V8P 5C2, Canada
| | - Houman Savoji
- Institute of Biomedical Engineering, Department of Pharmacology and Physiology, Faculty of Medicine, University of Montreal, Montreal, QC, H3T 1J4, Canada.
- Research Center, Sainte-Justine University Hospital, Montreal, QC, H3T 1C5, Canada
- Montreal TransMedTech Institute, Montreal, QC, H3T 1J4, Canada
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Zhang T, Ren Z, Guo S, Zhang G, Wang S, Qiao S. Broadband Self-Powered CdS ETL-Based MAPbI 3 Heterojunction Photodetector Induced by a Photovoltaic-Pyroelectric-Thermoelectric Effect. ACS APPLIED MATERIALS & INTERFACES 2023; 15:44444-44455. [PMID: 37696775 DOI: 10.1021/acsami.3c07585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
CdS, with a noncentrosymmetric structure, is thought as an important electron transport layer (ETL) in perovskite-based devices, but its pyroelectric effect, which can efficiently modulate the optoelectronic processes, is not well explored. In this work, a MAPbI3 heterojunction of CdS/MAPbI3/Spiro-OMeTAD with a c-axis preferred oxygen-doped CdS ETL is developed as a high-performance photodetector (PD). This PD exhibits a stable self-powered property in the spectral range of ∼360-780 nm due to its excellent photovoltaic effect. Moreover, the light-induced pyroelectric potential in the CdS ETL is demonstrated to be an efficient approach for improving the photoresponses, and different effects are observed for different laser irradiations, which can be well understood from their working mechanisms. Upon 450 nm laser irradiation, the photovoltage responsivity (R) is greatly improved from 596.9 to 6383.6 V/W with an increment of 1069.54%. In addition, the response spectrum is also extended outside the bandgap restriction of the MAPbI3 to 1550 nm due to both the pyroelectric and photothermoelectric effects, which is a big breakthrough for the perovskite heterojunction PD. Through turning the external bias voltage and ambient temperature, the coupling mechanisms of the pyroelectric and photovoltaic effects are further analyzed. This work provides an important understanding of designing the CdS ETL-based perovskite heterojunction for broadband high-performance photoelectric devices by introducing the pyroelectric effect.
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Affiliation(s)
- Tao Zhang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Zhiyuan Ren
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Siyang Guo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Guojuan Zhang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Shufang Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Shuang Qiao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
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Zhang B, Chang Y, Han Z, Wang W, Luo B, Zhai W, Wang J. Improved Dual-Polarity Response via Pyro-phototronic Effect for Filterless Visible Light Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207718. [PMID: 36897011 DOI: 10.1002/smll.202207718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 02/10/2023] [Indexed: 06/15/2023]
Abstract
Dual-polarity response photodetectors (PDs) take full advantage of the directivity of the photocurrent to identify optical information. The dual-polarity signal ratio, a key parameter that represents the equilibrium degree of responses to different lights, is proposed for the first time. The synchronous enhancement of dual-polarity photocurrents and the amelioration of the dual-polarity signal ratio are beneficial to the practical applications. Herein, based on the selective light absorption and energy band structure design, a self-powered CdS/PEDOT:PSS/Au heterojunction PD consisting of a p-n junction and a Schottky junction exhibits unique wavelength-dependent dual-polarity response, where the photocurrent is negative and positive in the short and long wavelength regions, respectively. More importantly, the pyro-phototronic effect inside the CdS layer significantly improves the dual-polarity photocurrents with the maximum enhancement factors of 120%, 343%, 1167%, 1577%, and 1896% at 405, 450, 532, 650, and 808 nm, respectively. Furthermore, the dual-polarity signal ratio tends to 1:1 due to different degrees of the enhancement. This work provides a novel design strategy for dual-polarity response PDs with a simple working principle and improved performance, which can supply a substitution for two traditional PDs in the filterless visible light communication (VLC) system.
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Affiliation(s)
- Boyong Zhang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yu Chang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zhuokun Han
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wencan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Bingcheng Luo
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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6
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Recent Progress in Flexible Pressure Sensor Arrays. NANOMATERIALS 2022; 12:nano12142495. [PMID: 35889718 PMCID: PMC9319019 DOI: 10.3390/nano12142495] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2022] [Revised: 07/16/2022] [Accepted: 07/17/2022] [Indexed: 12/11/2022]
Abstract
Flexible pressure sensors that can maintain their pressure sensing ability with arbitrary deformation play an essential role in a wide range of applications, such as aerospace, prosthetics, robotics, healthcare, human–machine interfaces, and electronic skin. Flexible pressure sensors with diverse conversion principles and structural designs have been extensively studied. At present, with the development of 5G and the Internet of Things, there is a huge demand for flexible pressure sensor arrays with high resolution and sensitivity. Herein, we present a brief description of the present flexible pressure sensor arrays with different transduction mechanisms from design to fabrication. Next, we discuss the latest progress of flexible pressure sensor arrays for applications in human–machine interfaces, healthcare, and aerospace. These arrays can monitor the spatial pressure and map the trajectory with high resolution and rapid response beyond human perception. Finally, the outlook of the future and the existing problems of pressure sensor arrays are presented.
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7
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Babu VJ, Anusha M, Sireesha M, Sundarrajan S, Abdul Haroon Rashid SSA, Kumar AS, Ramakrishna S. Intelligent Nanomaterials for Wearable and Stretchable Strain Sensor Applications: The Science behind Diverse Mechanisms, Fabrication Methods, and Real-Time Healthcare. Polymers (Basel) 2022; 14:polym14112219. [PMID: 35683893 PMCID: PMC9182624 DOI: 10.3390/polym14112219] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2022] [Revised: 05/24/2022] [Accepted: 05/27/2022] [Indexed: 11/30/2022] Open
Abstract
It has become a scientific obligation to unveil the underlying mechanisms and the fabrication methods behind wearable/stretchable strain sensors based on intelligent nanomaterials in order to explore their possible potential in the field of biomedical and healthcare applications. This report is based on an extensive literature survey of fabrication of stretchable strain sensors (SSS) based on nanomaterials in the fields of healthcare, sports, and entertainment. Although the evolution of wearable strain sensors (WSS) is rapidly progressing, it is still at a prototype phase and various challenges need to be addressed in the future in special regard to their fabrication protocols. The biocalamity of COVID-19 has brought a drastic change in humans’ lifestyles and has negatively affected nations in all capacities. Social distancing has become a mandatory rule to practice in common places where humans interact with each other as a basic need. As social distancing cannot be ruled out as a measure to stop the spread of COVID-19 virus, wearable sensors could play a significant role in technologically impacting people’s consciousness. This review article meticulously describes the role of wearable and strain sensors in achieving such objectives.
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Affiliation(s)
- Veluru Jagadeesh Babu
- NUS Centre for Nanotechnology and Sustainability, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore; (M.S.); (S.S.A.A.H.R.); (S.R.)
- Correspondence: (V.J.B.); (S.S.)
| | - Merum Anusha
- Department of Pharmacology, S V Medical College, Dr NTR University of Health Sciences, Vijayawada 517501, India;
| | - Merum Sireesha
- NUS Centre for Nanotechnology and Sustainability, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore; (M.S.); (S.S.A.A.H.R.); (S.R.)
| | - Subramanian Sundarrajan
- NUS Centre for Nanotechnology and Sustainability, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore; (M.S.); (S.S.A.A.H.R.); (S.R.)
- Correspondence: (V.J.B.); (S.S.)
| | - Syed Sulthan Alaudeen Abdul Haroon Rashid
- NUS Centre for Nanotechnology and Sustainability, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore; (M.S.); (S.S.A.A.H.R.); (S.R.)
- Centre for Advanced Materials and Industrial Chemistry (CAMIC), School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - A. Senthil Kumar
- Advanced Manufacturing Laboratory, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore;
| | - Seeram Ramakrishna
- NUS Centre for Nanotechnology and Sustainability, Department of Mechanical Engineering, National University of Singapore, Singapore 117581, Singapore; (M.S.); (S.S.A.A.H.R.); (S.R.)
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8
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Chen Y, Gao Z, Zhang F, Wen Z, Sun X. Recent progress in self-powered multifunctional e-skin for advanced applications. EXPLORATION (BEIJING, CHINA) 2022; 2:20210112. [PMID: 37324580 PMCID: PMC10191004 DOI: 10.1002/exp.20210112] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Accepted: 11/11/2021] [Indexed: 06/15/2023]
Abstract
Electronic skin (e-skin), new generation of flexible wearable electronic devices, has characteristics including flexibility, thinness, biocompatibility with broad application prospects, and a crucial place in future wearable electronics. With the increasing demand for wearable sensor systems, the realization of multifunctional e-skin with low power consumption or even autonomous energy is urgently needed. The latest progress of multifunctional self-powered e-skin for applications in physiological health, human-machine interaction (HMI), virtual reality (VR), and artificial intelligence (AI) is presented here. Various energy conversion effects for the driving energy problem of multifunctional e-skin are summarized. An overview of various types of self-powered e-skins, including single-effect e-skins and multifunctional coupling-effects e-skin systems is provided, where the aspects of material preparation, device assembly, and output signal analysis of the self-powered multifunctional e-skin are described. In the end, the existing problems and prospects in this field are also discussed.
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Affiliation(s)
- Yunfeng Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesSoochow UniversitySuzhouP. R. China
| | - Zhengqiu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesSoochow UniversitySuzhouP. R. China
| | - Fangjia Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesSoochow UniversitySuzhouP. R. China
| | - Zhen Wen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesSoochow UniversitySuzhouP. R. China
| | - Xuhui Sun
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon‐Based Functional Materials and DevicesSoochow UniversitySuzhouP. R. China
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9
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Dai B, Biesold GM, Zhang M, Zou H, Ding Y, Wang ZL, Lin Z. Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes. Chem Soc Rev 2021; 50:13646-13691. [PMID: 34821246 DOI: 10.1039/d1cs00506e] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.
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Affiliation(s)
- Baoying Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Haiyang Zou
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Yong Ding
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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10
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Recent Development of Multifunctional Sensors Based on Low-Dimensional Materials. SENSORS 2021; 21:s21227727. [PMID: 34833801 PMCID: PMC8618950 DOI: 10.3390/s21227727] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/01/2021] [Accepted: 11/10/2021] [Indexed: 12/30/2022]
Abstract
With the demand for accurately recognizing human actions and environmental situations, multifunctional sensors are essential elements for smart applications in various emerging technologies, such as smart robots, human-machine interface, and wearable electronics. Low-dimensional materials provide fertile soil for multifunction-integrated devices. This review focuses on the multifunctional sensors for mechanical stimulus and environmental information, such as strain, pressure, light, temperature, and gas, which are fabricated from low-dimensional materials. The material characteristics, device architecture, transmission mechanisms, and sensing functions are comprehensively and systematically introduced. Besides multiple sensing functions, the integrated potential ability of supplying energy and expressing and storing information are also demonstrated. Some new process technologies and emerging research areas are highlighted. It is presented that optimization of device structures, appropriate material selection for synergy effect, and application of piezotronics and piezo-phototronics are effective approaches for constructing and improving the performance of multifunctional sensors. Finally, the current challenges and direction of future development are proposed.
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11
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Peng Y, Yang N, Xu Q, Dai Y, Wang Z. Recent Advances in Flexible Tactile Sensors for Intelligent Systems. SENSORS (BASEL, SWITZERLAND) 2021; 21:5392. [PMID: 34450833 PMCID: PMC8401379 DOI: 10.3390/s21165392] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 07/31/2021] [Accepted: 08/05/2021] [Indexed: 11/16/2022]
Abstract
Tactile sensors are an important medium for artificial intelligence systems to perceive their external environment. With the rapid development of smart robots, wearable devices, and human-computer interaction interfaces, flexible tactile sensing has attracted extensive attention. An overview of the recent development in high-performance tactile sensors used for smart systems is introduced. The main transduction mechanisms of flexible tactile sensors including piezoresistive, capacitive, piezoelectric, and triboelectric sensors are discussed in detail. The development status of flexible tactile sensors with high resolution, high sensitive, self-powered, and visual capabilities are focused on. Then, for intelligent systems, the wide application prospects of flexible tactile sensors in the fields of wearable electronics, intelligent robots, human-computer interaction interfaces, and implantable electronics are systematically discussed. Finally, the future prospects of flexible tactile sensors for intelligent systems are proposed.
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Affiliation(s)
| | | | | | | | - Zhiqiang Wang
- Information Science Academy of China Electronics Technology Group Corporation, Beijing 100086, China; (Y.P.); (N.Y.); (Q.X.); (Y.D.)
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12
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Affiliation(s)
- Rongrong Bao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
| | - Juan Tao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332-0245 USA
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13
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Zhong B, Wang X, Bi Y, Kang W, Zhang L. Simple synthesis of crooked Ag 2Te nanotubes and their photoelectrical properties. NEW J CHEM 2021. [DOI: 10.1039/d1nj00687h] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Crooked Ag2Te nanotubes were prepared through homogeneous precipitation and the photoelectric properties of the film-based photodetector were investigated.
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Affiliation(s)
- Binnian Zhong
- Qinghai Provincial Key Laboratory of New Light Alloys
- Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming
- Qinghai University
- Xining
- China
| | - Xinqing Wang
- Qinghai Provincial Key Laboratory of New Light Alloys
- Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming
- Qinghai University
- Xining
- China
| | - Yanyu Bi
- Qinghai Provincial Key Laboratory of New Light Alloys
- Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming
- Qinghai University
- Xining
- China
| | - Weifeng Kang
- Qinghai Provincial Key Laboratory of New Light Alloys
- Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming
- Qinghai University
- Xining
- China
| | - Linhui Zhang
- Qinghai Provincial Key Laboratory of New Light Alloys
- Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming
- Qinghai University
- Xining
- China
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Oh H, Dayeh SA. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. SENSORS (BASEL, SWITZERLAND) 2020; 20:E3872. [PMID: 32664467 PMCID: PMC7411910 DOI: 10.3390/s20143872] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2020] [Revised: 05/19/2020] [Accepted: 05/22/2020] [Indexed: 11/17/2022]
Abstract
Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed.
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Affiliation(s)
- Hongseok Oh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
| | - Shadi A Dayeh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
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15
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Lee B, Oh JY, Cho H, Joo CW, Yoon H, Jeong S, Oh E, Byun J, Kim H, Lee S, Seo J, Park CW, Choi S, Park NM, Kang SY, Hwang CS, Ahn SD, Lee JI, Hong Y. Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution. Nat Commun 2020; 11:663. [PMID: 32005935 PMCID: PMC6994701 DOI: 10.1038/s41467-020-14485-9] [Citation(s) in RCA: 49] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2019] [Accepted: 01/03/2020] [Indexed: 11/16/2022] Open
Abstract
The ability to image pressure distribution over complex three-dimensional surfaces would significantly augment the potential applications of electronic skin. However, existing methods show poor spatial and temporal fidelity due to their limited pixel density, low sensitivity, or low conformability. Here, we report an ultraflexible and transparent electroluminescent skin that autonomously displays super-resolution images of pressure distribution in real time. The device comprises a transparent pressure-sensing film with a solution-processable cellulose/nanowire nanohybrid network featuring ultrahigh sensor sensitivity (>5000 kPa-1) and a fast response time (<1 ms), and a quantum dot-based electroluminescent film. The two ultrathin films conform to each contact object and transduce spatial pressure into conductivity distribution in a continuous domain, resulting in super-resolution (>1000 dpi) pressure imaging without the need for pixel structures. Our approach provides a new framework for visualizing accurate stimulus distribution with potential applications in skin prosthesis, robotics, and advanced human-machine interfaces.
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Affiliation(s)
- Byeongmoon Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Ji-Young Oh
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea.
| | - Hyeon Cho
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Chul Woong Joo
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Hyungsoo Yoon
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Sujin Jeong
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Eunho Oh
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junghwan Byun
- Department of Mechanical and Aerospace Engineering, Institute of Advanced Machines and Design, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Soft Robotics Research Center (SRRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Hanul Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Seunghwan Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jiseok Seo
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Chan Woo Park
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Sukyung Choi
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Nae-Man Park
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Seung-Youl Kang
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Chi-Sun Hwang
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Seong-Deok Ahn
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Jeong-Ik Lee
- Reality Device Research Division, ICT Materials & Components & Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), Daejeon, 34129, Republic of Korea
| | - Yongtaek Hong
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
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Chen H, Lv L, Zhang J, Zhang S, Xu P, Li C, Zhang Z, Li Y, Xu Y, Wang J. Enhanced Stretchable and Sensitive Strain Sensor via Controlled Strain Distribution. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E218. [PMID: 32012691 PMCID: PMC7074966 DOI: 10.3390/nano10020218] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2019] [Revised: 01/21/2020] [Accepted: 01/21/2020] [Indexed: 12/26/2022]
Abstract
Stretchable and wearable opto-electronics have attracted worldwide attention due to their broad prospects in health monitoring and epidermal applications. Resistive strain sensors, as one of the most typical and important device, have been the subject of great improvements in sensitivity and stretchability. Nevertheless, it is hard to take both sensitivity and stretchability into consideration for practical applications. Herein, we demonstrated a simple strategy to construct a highly sensitive and stretchable graphene-based strain sensor. According to the strain distribution in the simulation result, highly sensitive planar graphene and highly stretchable crumpled graphene (CG) were rationally connected to effectively modulate the sensitivity and stretchability of the device. For the stretching mode, the device showed a gauge factor (GF) of 20.1 with 105% tensile strain. The sensitivity of the device was relatively high in this large working range, and the device could endure a maximum tensile strain of 135% with a GF of 337.8. In addition, in the bending mode, the device could work in outward and inward modes. This work introduced a novel and simple method with which to effectively monitor sensitivity and stretchability at the same time. More importantly, the method could be applied to other material categories to further improve the performance.
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Affiliation(s)
- Huamin Chen
- Fujian Provincial Key Laboratory of Functional Marine Sensing Materials, Center for Advanced Marine Materials and Smart Sensors, Minjiang University, Fuzhou 350108, China; (Z.Z.)
| | - Longfeng Lv
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.L.); (J.Z.); (S.Z.); (C.L.)
| | - Jiushuang Zhang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.L.); (J.Z.); (S.Z.); (C.L.)
| | - Shaochun Zhang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.L.); (J.Z.); (S.Z.); (C.L.)
| | - Pengjun Xu
- Faculty of Clothing and Design, Minjiang University, Fuzhou 350108, China;
| | - Chuanchuan Li
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.L.); (J.Z.); (S.Z.); (C.L.)
| | - Zhicheng Zhang
- Fujian Provincial Key Laboratory of Functional Marine Sensing Materials, Center for Advanced Marine Materials and Smart Sensors, Minjiang University, Fuzhou 350108, China; (Z.Z.)
| | - Yuliang Li
- Fujian Provincial Key Laboratory of Functional Marine Sensing Materials, Center for Advanced Marine Materials and Smart Sensors, Minjiang University, Fuzhou 350108, China; (Z.Z.)
| | - Yun Xu
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.L.); (J.Z.); (S.Z.); (C.L.)
| | - Jun Wang
- Fujian Provincial Key Laboratory of Functional Marine Sensing Materials, Center for Advanced Marine Materials and Smart Sensors, Minjiang University, Fuzhou 350108, China; (Z.Z.)
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17
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Recent progress in tactile sensors and their applications in intelligent systems. Sci Bull (Beijing) 2020; 65:70-88. [PMID: 36659072 DOI: 10.1016/j.scib.2019.10.021] [Citation(s) in RCA: 54] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 09/19/2019] [Accepted: 10/09/2019] [Indexed: 01/21/2023]
Abstract
With the rapid development of intelligent technology, tactile sensors as sensing devices constitute the core foundation of intelligent systems. Biological organs that can sense various stimuli play vital roles in the interaction between human beings and the external environment. Inspired by this fact, research on skin-like tactile sensors with multifunctionality and high performance has attracted extensive attention. An overview of the development of high-performance tactile sensors applied in intelligent systems is systematically presented. First, the development of tactile sensors endowed with stretchability, self-healing, biodegradability, high resolution and self-powered capability is discussed. Then, for intelligent systems, tactile sensors with excellent application prospects in many fields, such as wearable devices, medical treatment, artificial limbs and robotics, are presented. Finally, the future prospects of tactile sensors for intelligent systems are discussed.
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18
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Abstract
Electronic skin (e-skin) uses advanced electronics and sensor arrays to manufacture human-skin-like robotics skin. The creation of e-skin has been made possible due to various physics effects/mechanisms, innovative materials, structural designs, and advanced fabrication techniques. In this Perspective, we describe the current advances in and emerging uses of e-skin for closed-loop systems, with a view toward applications in smart robotics, Internet of Things, and human-machine interfaces.
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Affiliation(s)
- Chunfeng Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P.R. China
- College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , P.R. China
- Key Laboratory of Materials Processing and Mold of Ministry of Education, School of Physics and Engineering , Zhengzhou University , Zhengzhou 450001 , P.R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P.R. China
- College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , P.R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P.R. China
| | - Zhonglin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor , Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083 , P.R. China
- College of Physics and Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , P.R. China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P.R. China
- School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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19
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Xue X, Chi H, Zhang X, Xu J, Xiong J, Zheng J. Oriented assembly of CdS nanocrystals via dynamic surface modification-tailored particle interaction. Phys Chem Chem Phys 2019; 21:19548-19553. [PMID: 31464312 DOI: 10.1039/c9cp03403j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The controlled assembly of quantum dots (QDs) remains a challenge due to the lack of in-depth understanding of the roles of ligand dynamics. In this study, tripods, particles, nanorods and nanoflowers of CdS with yellow, red and cyan PL emissions, respectively, were achieved through the coarsening of thioglycolic acid (TGA)-capped CdS QDs with a novel hydroxyl-TGA exchange procedure. Dynamic hydroxyl modification-induced aggregation and coalescence can help to describe the defects and the corresponding photoluminescence characteristics of these nanocrystals. A crystal growth model involving assembly and coalescence was developed to describe the crystal growth and the corresponding PL properties, where hydroxyl-motivated hydrogen-bonding interaction was used to explain the oriented assembly of CdS QDs.
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Affiliation(s)
- Xiaogang Xue
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China. and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Hualin Chi
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China.
| | - Xiuyun Zhang
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China.
| | - Juan Xu
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China.
| | - Jian Xiong
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China.
| | - Jinsheng Zheng
- College of Materials and Textiles, Key Laboratory of Advanced Textile Materials and Manufacturing Technology of the Ministry of Education, Zhejiang Sci-Tech University, Hangzhou 310018, China.
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20
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Zhang M, Zhao L, Zhao R, Li Z, Liu Y, Duan Y, Han T. A mechanochromic luminescent material with aggregation-induced emission: Application for pressure sensing and mapping. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2019; 220:117125. [PMID: 31136865 DOI: 10.1016/j.saa.2019.05.030] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2019] [Revised: 04/25/2019] [Accepted: 05/11/2019] [Indexed: 06/09/2023]
Abstract
In this study, we report a new compound, (E)-4-(((2-hydroxynaphthalen-1-yl)methylene)amino)-3-methylbenzoic acid (HNMB), which shows aggregation-induced emission property as well as intramolecular charge transfer (ICT) nature. In addition, it exhibits unique mechanochromic luminescence (MCL). The HNMB solid powder emits strong emission but shows quenching effect together with bathochromic-shift after grinding, suggesting a high contrast ratio up to 1420%. Through crystallographic analysis, the relationship between MCL nature and molecular packing mode is verified: Molecules in crystalline phase adopt the J-type coupling based on less overlapped π⋯π stacking, in which multiple intermolecular interactions mainly including C-H⋯π, C-H⋯O and hydrogen bonding, help to stabilize such packing mode. When these interactions are destructed by mechanical force, the packing would be disassembled, activating the MCL behavior. Such working mechanism only needs weak external force capable of destructing intermolecular interactions, rendering the MCL material highly sensitive to pressure. As a practical application, a film sensor for pressure detection is designed based on HNMB, which gives a linear relation between the emission intensity and the external pressure in a lower range. The detection limit of the film sensor is 27.24 Mpa, suggesting high sensitivity. In addition, pressure mapping with high contrast ratio is obtained by surface plot, making this pressure sensor a reliable candidate to be instrumented for various applications.
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Affiliation(s)
- Mengyao Zhang
- Department of Chemistry, Capital Normal University, Beijing 100048, China
| | - Li Zhao
- Department of Chemistry, Capital Normal University, Beijing 100048, China
| | - Ruixue Zhao
- Department of Chemistry, Capital Normal University, Beijing 100048, China
| | - Zhongfeng Li
- Department of Chemistry, Capital Normal University, Beijing 100048, China
| | - Yang Liu
- Beijing Key Laboratory of Radiation Advanced Materials, Beijing Research Center for Radiation Application, Beijing 100015, China
| | - Yuai Duan
- Department of Chemistry, Capital Normal University, Beijing 100048, China.
| | - Tianyu Han
- Department of Chemistry, Capital Normal University, Beijing 100048, China.
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21
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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22
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Zhao ZH, Dai Y. Piezo-phototronic effect-modulated carrier transport behavior in different regions of a Si/CdS heterojunction photodetector under a Vis-NIR waveband. Phys Chem Chem Phys 2019; 21:9574-9580. [PMID: 31020968 DOI: 10.1039/c9cp00415g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
The piezo-phototronic effect, as a three-way coupling effect of piezoelectricity, semiconductor and optical excitation in piezoelectric semiconductors to improve the performance of optoelectronic devices, has a wide range of applications in various fields. However, under different light illumination conditions, the piezo-phototronic effect would have different effects on the optoelectronic performance due to the different photo-generated carrier excitation regions. Here, the piezo-phototronic effect is utilized to modulate the carrier transport behavior of a p-Si/n-CdS heterojunction PD during the optoelectronic process in a broadband range from visible to near-infrared light. The strain-induced piezo-charges significantly improve the photoresponse performance of the heterojunction PD. The photoresponsivity increases by 1867% under -0.35‰ strain under 808 nm light illumination, with a remarkable reduction in the rise and fall times to ∼2.1 ms (reduced by 83.3% and 50.0%, respectively). However, since the photo-generated carriers are produced only at the n-CdS side under 442 nm light illumination, the photoresponse performance is greatly weakened by the piezo-phototronic effect. The corresponding working mechanism of the piezo-phototronic effect on the heterojunction photodiode under different light illumination conditions is proposed in detail. These results provide an in-depth understanding about the piezo-phototronic effect, which would enable more efficient utilization of the piezo-phototronic effect in optoelectronic devices.
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Affiliation(s)
- Zhi-Hao Zhao
- School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
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23
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Zhao WB, Liu KK, Song SY, Zhou R, Shan CX. Fluorescent Nano-Biomass Dots: Ultrasonic-Assisted Extraction and Their Application as Nanoprobe for Fe 3+ detection. NANOSCALE RESEARCH LETTERS 2019; 14:130. [PMID: 30989400 PMCID: PMC6465388 DOI: 10.1186/s11671-019-2950-x] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Accepted: 03/19/2019] [Indexed: 05/13/2023]
Abstract
Biomass as sustainable and renewable resource has been one of the important energy sources for human life. Herein, luminescent nano-biomass dots (NBDs) have been extracted from soybean through ultrasonic method, which endows biomass with fluorescence property. The as-prepared NBDs are amorphous in structure with an average diameter of 2.4 nm and show bright blue fluorescence with a quantum yield of 16.7%. Benefiting from the edible raw materials and heating-free synthesis process, the cytotoxicity test shows that the cell viability still keeps 100% even if the concentration of the NBDs reaches 800 μg/ml, indicating the good biocompatibility of the NBDs. In addition, the fluorescence of the NBDs is very sensitive to Fe3+, which can be used for Fe3+ detection in terms of their health superiority. The limit of detection (LOD) of the proposed sensor was determined as 2.9 μM, which is lower than the maximum allowable level of Fe3+ (5.37 μM) in drinking water.
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Affiliation(s)
- Wen-Bo Zhao
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, No. 75 Daxue Road, Zhengzhou, 450052 People’s Republic of China
| | - Kai-Kai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, No. 75 Daxue Road, Zhengzhou, 450052 People’s Republic of China
| | - Shi-Yu Song
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, No. 75 Daxue Road, Zhengzhou, 450052 People’s Republic of China
| | - Rui Zhou
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, No. 75 Daxue Road, Zhengzhou, 450052 People’s Republic of China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, No. 75 Daxue Road, Zhengzhou, 450052 People’s Republic of China
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24
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Yang X, Shan CX, Ni PN, Jiang MM, Chen AQ, Zhu H, Zang JH, Lu YJ, Shen DZ. Electrically driven lasers from van der Waals heterostructures. NANOSCALE 2018; 10:9602-9607. [PMID: 29748685 DOI: 10.1039/c8nr01037d] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Van der Waals heterostructures (vdWHs) have opened new avenues for fundamental scientific studies and design of novel devices. Although numerous reports have demonstrated vdWH optoelectronic devices, no report on vdWH lasers can be found to date. In this paper we demonstrated electrically driven vdWH lasers for the first time, and the lasers were realized from ZnO microwire/MgO/p-GaN structures. By coating Ag films on the top surfaces of the ZnO microwires, the current injection and lasing directionality of the vdWH lasers have been improved significantly, and this improvement can be attributed to the high conductivity and reflectivity of the Ag film. The output power of the device can reach 2.41 μW under 14 mA drive current, which is among the highest values ever reported for ZnO based lasers. Our results may provide a promising way to electrically pumped lasers based on micro/nano-structures.
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Affiliation(s)
- Xun Yang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
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25
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Azadinia M, Fathollahi M, Ameri M, Shabani S, Mohajerani E. Low noise ultraviolet photodetector with over 100% enhanced lifetime based on polyfluorene copolymer and ZnO nanoparticles. J Appl Polym Sci 2018. [DOI: 10.1002/app.46533] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Mohsen Azadinia
- Organic Electronic Laboratory, Faculty of Electrical and Computer Engineering; K.N. Toosi University of Technology; Tehran 1431714191 Iran
| | - Mohammadreza Fathollahi
- Laser and Plasma Research Institute, G.C., Shahid Beheshti University; Tehran 1983963113 Iran
| | - Mohsen Ameri
- Laser and Plasma Research Institute, G.C., Shahid Beheshti University; Tehran 1983963113 Iran
| | - Siyavash Shabani
- Department of Electrical Engineering; Shamsipour Technical and Vocational College; Tehran 1617766651 Iran
| | - Ezeddin Mohajerani
- Laser and Plasma Research Institute, G.C., Shahid Beheshti University; Tehran 1983963113 Iran
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26
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Dai Y, Wang X, Peng W, Xu C, Wu C, Dong K, Liu R, Wang ZL. Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1705893. [PMID: 29334148 DOI: 10.1002/adma.201705893] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Revised: 11/20/2017] [Indexed: 05/22/2023]
Abstract
Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self-powered flexible photodetector (PD) based on p-Si/n-CdS nanowires heterostructure is fabricated. By introducing the pyro-phototronic effect derived from wurtzite structured CdS, the self-powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light-induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self-powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self-powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS-based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D* regarding to the relative peak-to-peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect-induced photocurrent. The self-powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in various environments.
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Affiliation(s)
- Yejing Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Xingfu Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Wenbo Peng
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Cheng Xu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Changsheng Wu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Kai Dong
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Ruiyuan Liu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
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Zhang Y, Zhai J, Wang ZL. Piezo-Phototronic Matrix via a Nanowire Array. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1702377. [PMID: 29058785 DOI: 10.1002/smll.201702377] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2017] [Revised: 09/02/2017] [Indexed: 06/07/2023]
Abstract
Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity.
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Affiliation(s)
- Yang Zhang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Junyi Zhai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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Dai Y, Wang X, Peng W, Zou H, Yu R, Ding Y, Wu C, Wang ZL. Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect. ACS NANO 2017; 11:7118-7125. [PMID: 28692283 DOI: 10.1021/acsnano.7b02811] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Although silicon (Si) devices are the backbone of modern (opto-)electronics, infrared Si-photosensing suffers from low-efficiency due to its limitation in light-absorption. Here, we demonstrate a large improvement in the performance, equivalent to a 366-fold enhancement in photoresponsivity, of a Si-based near-infrared (NIR) photodetector (PD) by introducing the piezo-phototronic effect via a deposited CdS layer. By externally applying a -0.15‰ compressive strain to the heterojunction, carrier-dynamics modulation at the local junction can be induced by the piezoelectric polarization, and the photoresponsivity and detectivity of the PD exhibit an enhancement of two orders of magnitude, with the peak values up to 19.4 A/W and 1.8 × 1012 cm Hz1/2/W, respectively. The obtained maximum responsivity is considerably larger than those of commercial Si and InGaAs PDs in the NIR waveband. Meanwhile, the rise time and fall time are reduced by 84.6% and 76.1% under the external compressive strain. This work provides a cost-effective approach to achieve high-performance NIR photosensing by the piezo-phototronic effect for high-integration Si-based optoelectronic systems.
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Affiliation(s)
- Yejing Dai
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
- Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University , Tianjin 300072, China
| | - Xingfu Wang
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Wenbo Peng
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Haiyang Zou
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Ruomeng Yu
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Yong Ding
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Changsheng Wu
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
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Zhu X, Wang P, Zhang Q, Wang Z, Liu Y, Qin X, Zhang X, Dai Y, Huang B. CdS–MoS2 heterostructures on Mo substrates via in situ sulfurization for efficient photoelectrochemical hydrogen generation. RSC Adv 2017. [DOI: 10.1039/c7ra06304k] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
CdS–MoS2 photoelectrode with a double layers core shell structure was prepared on Mo substrate through using a simple electrodeposition and– in situ sulfurization method on Mo substrate.
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Affiliation(s)
- Xianglin Zhu
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Peng Wang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Qianqian Zhang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Zeyan Wang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Yuanyuan Liu
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Xiaoyan Qin
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Xiaoyang Zhang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Ying Dai
- School of Physics
- Shandong University
- Jinan 250100
- China
| | - Baibiao Huang
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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