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Kosarev IV, Kistanov AA. Carrier transport in bulk and two-dimensional Zn 2(V,Nb,Ta)N 3 ternary nitrides. NANOSCALE 2024; 16:10030-10037. [PMID: 38711346 DOI: 10.1039/d4nr01292e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Density functional theory-based simulations are applied to study the electronic structures, carrier masses, carrier mobility and carrier relaxation times in bulk and two-dimensional (2D) Zn2(V,Nb,Ta)N3 ternary nitrides. Bulk Zn2(V,Nb,Ta)N3 possess moderate band gap sizes of 2.17 eV, 3.11 eV, and 3.40 eV, respectively. Two-dimensional Zn2(V,Nb,Ta)N3 have slightly higher band gap sizes of 2.77 eV, 3.33 eV, and 3.23 eV, respectively. Carrier mass, carrier mobility and carrier relaxation time are found to be anisotropic in all the studied structures. Bulk and 2D samples show an order of magnitude higher electron mobility compared to hole mobility. The highest electron mobility in bulk Zn2NbN3 and Zn2TaN3 is about ∼103 cm2 V-1 s-1. Importantly, for 2D Zn2NbN3, an abnormally high electron mobility of 1.67 × 104 cm2 V-1 s-1 is observed, which is not inferior to the highest known electron mobility values in 2D materials. Such a high electron mobility in 2D Zn2NbN3 can be attributed to a strong delocalization of the conduction band minimum, which is responsible for electron transport. Therefore, this work opens up new materials for high performance nanodevices, such as tandem solar cells and field-effect transistors. This study also provides deep physical insights into the nature of carrier transport mechanisms in bulk and 2D Zn2(V,Nb,Ta)N3 ternary nitrides.
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Affiliation(s)
- Igor V Kosarev
- The Laboratory of Metals and Alloys Under Extreme Impacts, Ufa University of Science and Technology, Ufa 450076, Russia.
| | - Andrey A Kistanov
- The Laboratory of Metals and Alloys Under Extreme Impacts, Ufa University of Science and Technology, Ufa 450076, Russia.
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Malayee F, Bagheri R, Nazari F, Illas F. Electrostatic Gating of Phosphorene Polymorphs. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:2997-3010. [PMID: 38414832 PMCID: PMC10895923 DOI: 10.1021/acs.jpcc.3c05876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 11/14/2023] [Accepted: 11/14/2023] [Indexed: 02/29/2024]
Abstract
The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.
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Affiliation(s)
| | - Robabeh Bagheri
- Department
of Chemistry, Institute for Advanced Studies
in Basic Sciences, Zanjan 45137-66731, Iran
| | - Fariba Nazari
- Department
of Chemistry, Institute for Advanced Studies
in Basic Sciences, Zanjan 45137-66731, Iran
- Center
of Climate Change and Global Warming, Institute
for Advanced Studies in Basic Sciences, Zanjan 45137-66731, Iran
| | - Francesc Illas
- Departament
de Ciència de Materials i Química Física &
Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona,C/Martí i Franquès 1, 08028 Barcelona, Spain
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3
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Khengar SJ, Parmar PR, Modi N, Thakor PB. A study of 2D GeI 2/InTe van der Waals hetero bilayer as a photocatalyst material. NANOTECHNOLOGY 2023; 35:115704. [PMID: 38081073 DOI: 10.1088/1361-6528/ad143c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 12/10/2023] [Indexed: 12/28/2023]
Abstract
The computational study of the van der Waals hetero (vdW) bilayer GeI2/InTe has been carried out in present study. The isolated monolayer GeI2and InTe have been studied first and the results were compared to the previous studies. The possible stackings are considered after the vdW interaction correction is applied in the structure relaxation. The vdW hetero bilayer stability has been checked from the phonon dispersion andab initioMolecular Dynamics calculations. The charge transfer from InTe to GeI2monolayer. Type-II indirect band gap (1.98, 2.01 eV) is verified by the projected band structure and band alignment calculations. The vdW hetero bilayer is a superior photocatalyst for the pH value up to pH = 0 to 11. The optical properties are calculated from the complex dielectric constant. The absorption coefficient shows the enhance absorption of light in the visible and ultraviolet regions. The vdW hetero bilayer has shown low reflectivity (37%) and a high refractive index (2.80) in the visible region. The enhanced optical properties have shown its possible applications in optoelectronic devices.
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Affiliation(s)
- S J Khengar
- Department of Physics, Veer Narmad South Gujarat University, Surat-395007, Gujarat, India
| | - P R Parmar
- Department of Physics, Veer Narmad South Gujarat University, Surat-395007, Gujarat, India
| | - Nidhi Modi
- Department of Physics, Sir P. T. Sarvajanik Collage of Science, Surat 395001, Gujarat, India
| | - P B Thakor
- Department of Physics, Veer Narmad South Gujarat University, Surat-395007, Gujarat, India
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He C, Xu C, Zhang W. Instructive Synergistic Effect of Coordinating Phosphorus in Transition-Metal-Doped β-Phosphorus Carbide Guiding the Design of High-Performance CO 2RR Electrocatalysts. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38035402 DOI: 10.1021/acsami.3c12767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
Developing efficient electrocatalysts for the CO2 reduction reaction (CO2RR) is the key and difficult point to alleviate energy and climate issues. The synergistic catalytic effects between metal and nonmetal elements have gained attention for the design of the CO2RR electrocatalysts. The realization of this effect requires a suitable combination of metal and nonmetal elements, as well as the support of suitable substrates. Based on this, the transition-metal-doped β-phosphorus carbide (TM-PC) (TM = 4d and 5d transition metals except Tc) catalysts are designed, and their structures, electronic properties, and CO2RR catalytic performances are studied in depth via first-principle calculations. The strong bonding ability and high reactivity brought by the moderate electronegativity and abundant electrons and orbitals of phosphorus are the key to the excellent catalytic performance of TM-PCs. Coordinating phosphorus atoms improve the catalyst activity in two ways: (1) regulating the electron transfer of the TM active site, and (2) acting as the active site and changing the reaction mechanism. With the participation of coordinating P atoms, the "relay" of active sites reduces the limiting potential values for the reduction from CO2 to CH4 catalyzed by Cr-PC and Mo-PC by 0.27 and 0.23 V, respectively, compared with pathways where only the TM atom is the active site, reaching -0.55 and -0.63 V, respectively. Regarding the coordinating P atom as the second active site, Cr-PC and Mo-PC can catalyze the production of CH3CH2OH at limiting potential values of -0.54 and -0.67 V, respectively. This study demonstrates the dramatic enhancement of catalytic activity caused by suitable nonmetal coordinating atoms such as P and provides a reference for the design of high-performance CO2RR electrocatalysts based on metal-nonmetal coordinating active centers.
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Affiliation(s)
- Cheng He
- State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chang Xu
- State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wenxue Zhang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, China
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Zhao Y, Zhang B, Lin J. Metal-free Janus α- and β-SiCP 4: designing stable and efficient two-dimensional semiconductors for water splitting. Phys Chem Chem Phys 2023; 25:26666-26678. [PMID: 37772486 DOI: 10.1039/d3cp03300g] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Two-dimensional (2D) semiconductors exhibit exceptional potential in the field of photocatalytic water splitting due to their unique structural characteristics and photoelectric properties. In this study, based on first-principles density functional theory, we theoretically proposed two SiCP4 Janus 2D semiconductors with high stability, namely monolayer α- and β-SiCP4. By performing the calculation of HSE06 functionals, the band structures of monolayer α- and β-SiCP4 have been estimated, and the results show that both α- and β-SiCP4 are direct-band-gap semiconductors with band gaps of 1.64 eV and 1.91 eV, respectively. Meanwhile, the band edge levels of monolayer α- and β-SiCP4 meet the band structure requirements of photocatalysts in water splitting. Notably, because of the internal build-in electric fields and tiny band gaps, monolayer α- and β-SiCP4 exhibit separated photogenerated electron-hole pairs and high solar-to-hydrogen (STH) efficiency, reaching up to 33.68% and 23.72%, respectively. Additionally, we also investigate the impact of uniaxial strain on electronic, optical and photocatalytic properties of monolayer α- and β-SiCP4 considering pH values ranging from 0 to 14. Our results demonstrate that the maximum STH efficiency for α-SiCP4 is achieved under X-direction strain (η) of 2%, Y-direction strain (η) of 8%, and pH values between 2 and 4. Conversely, β-SiCP4 exhibits the highest STH efficiency under X-direction strain (η) of 8%, Y-direction strain (η) of 6%, and pH values between 2 and 4.
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Affiliation(s)
- Yanfu Zhao
- School of Science, Jimei University, Xiamen, 361021, China.
- Semiconductor Industry and Technology Research Institute, Jimei University, Xiamen, 361021, China
- Department of Photoelectric Information Engineering, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou, 350007, China
| | - Bofeng Zhang
- Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
| | - Jiahe Lin
- School of Science, Jimei University, Xiamen, 361021, China.
- Semiconductor Industry and Technology Research Institute, Jimei University, Xiamen, 361021, China
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Gao J, Zhang W, Yan X, Zhang X, Wang S, Yang G. Metallic CrP 2 monolayer: potential applications in energy storage and conversion. Phys Chem Chem Phys 2023; 25:24705-24711. [PMID: 37668165 DOI: 10.1039/d3cp02917d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/06/2023]
Abstract
Phosphorus-rich compounds have emerged as a promising class of energy storage and conversion materials due to their interesting structures and electrochemical properties. Herein, we propose that a metallic CrP2 monolayer, isomorphic to 1H-phase MoS2, is a good prospect as an anode for K-ion batteries and a catalyst for hydrogen evolution through first-principles calculations. The CrP2 monolayer demonstrates not only a desirable high K storage capacity (940 mA h g-1) but also a low K-ion diffusion barrier (0.10 eV) and average open circuit voltage (0.40 V). On the other hand, its Gibbs free energy (0.02 eV)/active site density is superior/comparable to that of commercial Pt, resulting from the contribution of the lone pair electrons of the P atom. Its high structural stability and intrinsic metallicity can ensure high safety and performance during the cyclic process. These interesting properties make the CrP2 monolayer a promising multifunctional material for energy storage and conversion devices.
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Affiliation(s)
- Jiayu Gao
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Wenyuan Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Xu Yan
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Xiaohua Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Sheng Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
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7
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Dehdast M, Neek-Amal M, Stampfl C, Pourfath M. Strain engineering of hyperbolic plasmons in monolayer carbon phosphide: a first-principles study. NANOSCALE 2023; 15:2234-2247. [PMID: 36628616 DOI: 10.1039/d2nr06439a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Natural and tunable in-plane hyperbolic plasmons have so far been elusive, and hence few two-dimensional hyperbolic materials have been theoretically and experimentally discovered. Here, comprehensive first-principles calculations were conducted to study the electronic and plasmonic properties of biaxially strained monolayer carbon phosphide (β-CP). We found that (i) a compressed β-CP hosts strong anisotropic Dirac-shaped fermions with robust modulated Fermi velocity, (ii) for biaxial strain of -3% an unprecedented ultra-wide hyperbolic window is extended continuously from terahertz (9 THz) to mid-visible (blue light, 693 THz), (iii) the tunable optical Van Hove singularity as the origin of hyperbolic plasmons in deformed β-CP is disclosed, (iv) an elliptic to hyperbolic transition in the σ-near-zero regime is demonstrated in terahertz frequencies (9 THz), (v) the propagation angle of the concave wavefront can be actively tuned using biaxial strains, and (vi) hyperbolic dispersion reorientation from one principal axis to another orthogonal one under compressive strains larger than 8% is observed. This study sheds new light on the unique properties of hyperbolic two-dimensional (2D) materials having exotic optoelectronic characteristics which are promising candidates for anisotropic light control with ultimate dexterity in the flat optics.
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Affiliation(s)
- Mahyar Dehdast
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran, Tehran 14395-515, Iran.
| | - Mehdi Neek-Amal
- Department of Physics, Shahid Rajaee Teacher Training University, 16875-163 Lavizan, Tehran, Iran
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
| | - Catherine Stampfl
- School of Physics, The University of Sydney, New South Wales 2006, Australia
| | - Mahdi Pourfath
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran, Tehran 14395-515, Iran.
- Super Computing Institute, University of Tehran, Tehran, Iran
- Institute for Microelectronics, Technische Universität Wien, Gußhausstraße 27-29/E360, A-1040 Wien, Austria
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8
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Xia J, Cao R, Zhao L, Wu Q. Structural screening and descriptor exploration of black phosphorus carbide supported bifunctional catalysts for lithium-sulfur batteries. J Colloid Interface Sci 2023; 630:317-327. [DOI: 10.1016/j.jcis.2022.10.098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Revised: 10/16/2022] [Accepted: 10/19/2022] [Indexed: 11/06/2022]
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9
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Gao J, Tang M, Zhang X, Yang G. Conductive C 3NS Monolayer with Superior Properties for K Ion Batteries. J Phys Chem Lett 2022; 13:12055-12060. [PMID: 36542526 DOI: 10.1021/acs.jpclett.2c03258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
K-ion batteries (KIBs) have been considered as appealing alternatives to Li ion batteries due to the high abundance of K, their high working voltages, and allowing the use of mature LIB technology. Thus far, anode materials that can meet the rigorous requirements of KIBs are still rather rare. Here, we have identified a desirable anode material, a metallic C3NS monolayer with high stability, a high storage capacity of 980 mAh/g, a low diffusion barrier of 0.24 eV, and a low open-circuit voltage of 0.36 V, through first-principles calculations. Metallic C3NSKn (n = 1-3) can ensure a high electron conductivity during the charge/discharge process. Valence electrons of the N atom in a triangular bipyramid configuration favor the formation of a planar edge-sharing hexagonal C4N2 unit and delocalized π bonding with C 2p electrons. The lone pair electrons of the S atom induce strong interactions with K atoms, facilitating storage capacity. These interesting properties make the C3NS monolayer a promising anode for KIBs.
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Affiliation(s)
- Jiayu Gao
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao066004, China
| | - Meng Tang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao066004, China
- School of Physics and Electronics, Hunan University, Changsha410082, People's Republic of China
| | - Xiaohua Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao066004, China
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao066004, China
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10
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A Novel Two-Dimensional ZnSiP 2 Monolayer as an Anode Material for K-Ion Batteries and NO 2 Gas Sensing. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27196726. [PMID: 36235262 PMCID: PMC9573561 DOI: 10.3390/molecules27196726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Revised: 10/04/2022] [Accepted: 10/05/2022] [Indexed: 11/07/2022]
Abstract
Using the crystal-structure search technique and first-principles calculation, we report a new two-dimensional semiconductor, ZnSiP2, which was found to be stable by phonon, molecular-dynamic, and elastic-moduli simulations. ZnSiP2 has an indirect band gap of 1.79 eV and exhibits an anisotropic character mechanically. Here, we investigated the ZnSiP2 monolayer as an anode material for K-ion batteries and gas sensing for the adsorption of CO, CO2, SO2, NO, NO2, and NH3 gas molecules. Our calculations show that the ZnSiP2 monolayer possesses a theoretical capacity of 517 mAh/g for K ions and an ultralow diffusion barrier of 0.12 eV. Importantly, the ZnSiP2 monolayer exhibits metallic behavior after the adsorption of the K-atom layer, which provides better conductivity in a period of the battery cycle. In addition, the results show that the ZnSiP2 monolayer is highly sensitive and selective to NO2 gas molecules.
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11
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Hu X, Liu W, Yang J, Wang W, Sun L, Shi X, Hao Y, Zhang S, Zhou W. Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study. NANOSCALE 2022; 14:13608-13613. [PMID: 36070456 DOI: 10.1039/d2nr03578b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Direct bandgap and significant anisotropic properties are crucial and beneficial for nanoelectronic applications. In this work, through first-principles calculations, we investigate novel two-dimensional (2D) α-XC (X = P, As, Sb, Bi) materials, which possess a direct bandgap of 0.73 to 1.40 eV with remarkable anisotropic electronic properties. Intriguingly, 2D α-XC presents the highest electron mobility near 8 × 103 cm2 V-1 s-1 along the Γ-X direction. Moreover, the transfer characteristics of the 2D α-XC TFETs are thoroughly assessed through NEGF methods. AsC TFETs demonstrate an on-state current larger than 2.2 × 103 μA μm-1, which can satisfy the International Technology Roadmap for Semiconductors (ITRS) for high-performance requirements. In particular, the minimum value of subthreshold swing of devices is as low as 15 mV dec-1, indicating excellent device switching characteristics. The relevant calculation results show that 2D α-XC monolayers could be a promising candidate in next-generation high-performance device applications.
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Affiliation(s)
- Xuemin Hu
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Wenqiang Liu
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jialin Yang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Wei Wang
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Luanhong Sun
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China
| | - Xiaoqin Shi
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Wenhan Zhou
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Metallic B2C3P Monolayer as Li-Ion Battery Materials: A First-Principles Study. Processes (Basel) 2022. [DOI: 10.3390/pr10091809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
The search for and design of high-performance electrode materials is always an important topic in rechargeable batteries. Using a global structure prediction method together with first-principles calculations, a free-standing two-dimensional B2C3P monolayer with honeycomb structure was identified. The stability of the B2C3P monolayer was confirmed by cohesive energy, phonon curves, and ab initio molecular dynamics calculations. Of note, the B2C3P monolayer was demonstrated to be metallic, which shows excellent performance for Li-ion batteries. For example, the B2C3P monolayer also exhibited a metallic characteristic after Li adsorption, therefore the ability to keep good electrical conductivity during battery operation. Furthermore, when a B2C3P monolayer is used as a lithium-ion battery anode, it shows an ultra-high theoretical capacity of 3024 mAh/g, and a comparatively low diffusion barrier of 0.33 eV. All calculated results showed that the B2C3P monolayer is an appealing anode material, and has great potential in energy storage devices.
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13
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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14
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Li L, Zhao C, Zhang Y, Zhang L, Zhu Y. Janus Ga 2SSe nanotubes as efficient photocatalyst for overall water splitting. NANOTECHNOLOGY 2022; 33:465703. [PMID: 35944513 DOI: 10.1088/1361-6528/ac8813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 08/09/2022] [Indexed: 06/15/2023]
Abstract
Using sunlight to decompose water into hydrogen and oxygen is one of the most important ways to solve the current global environmental issues and energy problems. In this paper, we use density functional theory to predict the photocatalytic performance of Janus Ga2SSe nanotubes (JGSSe NTs) for the first time. The result shows that the small formation energy and strain energy ensure the stability of the nanotubes. Compared with monolayers, the visible light absorption range of JGSSe NTs is wider, and the large radius (>26.60 A) nanotubes all meet the hydrolysis potential. Surprisingly, the hole mobility of JGSSe NT was estimated to be as high as 2.89 × 104cm2V-1S-1. In conclusion, JGSSe nanotubes are expected to be an excellent photocatalyst due to their low electron-hole recombination rate, high hole mobility, solar absorption in the visible light range, and good oxidation capacity. In addition, the nanotube band gap can be effectively regulated by applying strain. It is hoped that our research will provide meaningful progress in the development of novel and efficient photocatalysts. We hope that our research will provide a possible way to develop novel and efficient photocatalysts.
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Affiliation(s)
- Lijian Li
- Department of Physics, Changji University, Changji 831100, People's Republic of China
| | - Chen Zhao
- Department of Physics, Changji University, Changji 831100, People's Republic of China
| | - Yujiao Zhang
- Department of Physics, Changji University, Changji 831100, People's Republic of China
| | - Long Zhang
- Department of Physics, Changji University, Changji 831100, People's Republic of China
| | - Yingtao Zhu
- Department of Physics, Changji University, Changji 831100, People's Republic of China
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15
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Cao R, Fan S, Yin P, Ma C, Zeng Y, Wang H, Khan K, Wageh S, Al-Ghamd AA, Tareen AK, Al-Sehemi AG, Shi Z, Xiao J, Zhang H. Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2260. [PMID: 35808105 PMCID: PMC9268368 DOI: 10.3390/nano12132260] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 06/22/2022] [Accepted: 06/23/2022] [Indexed: 01/27/2023]
Abstract
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.
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Affiliation(s)
- Rui Cao
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Sidi Fan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Peng Yin
- College of Photoelectrical Engineering, Changchun University of Science and Technology, Changchun 130022, China;
| | - Chunyang Ma
- Research Center of Circuits and Systems, Peng Cheng Laboratory (PCL), Shenzhen 518055, China;
| | - Yonghong Zeng
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Huide Wang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia; (S.W.); (A.A.A.-G.)
| | - Ahmed A. Al-Ghamd
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia; (S.W.); (A.A.A.-G.)
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China;
| | - Abdullah G. Al-Sehemi
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, Saudi Arabia;
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Jing Xiao
- College of Physics and Electronic Engineering, Taishan University, Tai’an 271000, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (R.C.); (S.F.); (Y.Z.); (H.W.); (K.K.); (H.Z.)
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16
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Zhong M, Zeng W, Qin H, Zhu SH, Li XH, Liu FS, Tang B, Liu QJ. Doping effects on the antibonding states and carriers of two-dimensional PC 6. Phys Chem Chem Phys 2022; 24:10175-10183. [PMID: 35420088 DOI: 10.1039/d2cp00848c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The absence of a bandgap in pristine graphene severely restricts its application, and there is high demand for other novel two-dimensional (2D) materials. PC6 has recently emerged as a promising 2D material with a direct band gap and ultrahigh carrier mobility. In light of the remarkable properties of an intrinsic PC6 monolayer, it would be intriguing to find out whether a doped PC6 monolayer displays properties superior to the pure system. In this study, we have performed density functional theory calculations to understand the doping effects of both P-site and C-site substitution in PC6 and, for the first time, we discovered doping-related impurity-level anomalies in this system. We successfully explained why no donor or acceptor defect states exist in the band structures of XP-PC6 (X = C, Ge, Sn, O, S, Se, or Te). In group-IV-substituted systems, these dopant states hybridize with host states near the Fermi level rather than act as acceptors, which is deemed to be a potential way to tune the mobility of PC6. In the case of group-VI substitution, the underlying mechanism relating to doping anomalies arises from excess electrons occupying antibonding states.
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Affiliation(s)
- Mi Zhong
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
| | - Wei Zeng
- Teaching and Research Group of Chemistry, College of Medical Technology, Chengdu University of Traditional Chinese Medicine, Chengdu 610075, People's Republic of China
| | - Han Qin
- School of Science, Xihua University, Chengdu 610039, People's Republic of China
| | - Sheng-Hai Zhu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
| | - Xing-Han Li
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
| | - Fu-Sheng Liu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
| | - Bin Tang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Qi-Jun Liu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China.
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17
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Li P, Jin H, Zhong G, Ji H, Li Z, Yang J. Electrochemistry of P-C Bonds in Phosphorus-Carbon Based Anode Materials. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18506-18512. [PMID: 35437009 DOI: 10.1021/acsami.2c01494] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Phosphorus-carbon anode materials for alkali-metal ion storage in rechargeable batteries can simultaneously achieve high-energy density and fast charging. The P-C-bonded structure in the phosphorus-carbon materials has been observed and acknowledged to be a critical structural feature that renders improved cycling stability and rate performance. However, the underlying mechanisms, especially the role played by P-C bonds, remain elusive. By combining computational simulations and spectroscopic characterizations, we reveal that the stability of P-C bonds is critical to the electrochemical performance. In the discharge process, P-P bonds are fragile, while the bonding state of the P-C bonds is almost unchanged since electrons were mainly received by the P atoms to form lone pairs. The preserved P-C clusters can effectively serve as a reunion center for the recovery of P-P bonds in the recharging process, leading to a moderate energy change and improved cycling reversibility and structural stability of the phosphorous for electrochemical energy storage.
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Affiliation(s)
- Pai Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hongchang Jin
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guiming Zhong
- Dalian Institute of Chemical Physics, Dalian, Liaoning 116023, China
| | - Hengxing Ji
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
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18
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Shangguan W, Yan C, Li W, Long C, Liu L, Qi C, Li Q, Zhou Y, Guan Y, Gao L, Cai J. Two-dimensional semiconductor materials with high stability and electron mobility in group-11 chalcogenide compounds: MNX (M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M ≠ N). NANOSCALE 2022; 14:4271-4280. [PMID: 35244105 DOI: 10.1039/d1nr06971c] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
It is still an urgent task to find new two-dimensional (2D) semiconductor materials with a suitable band gap, high stability and high mobility for the applications of next generation electronic devices. Based on first-principles calculations, we report a new class of 2D group-11-chalcogenide trielement monolayers (MNX, where M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M ≠ N) with a wide band gap, excellent stability (dynamic stability, thermodynamic stability and environmental stability) and high mobility. At the mixed density functional level, the energy band gap extends from 0.61 eV to 2.65 eV, covering the ultraviolet-A and visible light regions, which is critical for a broadband optical response. For δ-MNX monolayers, the carrier mobility is as high as 104 cm2 V-1 s-1 at room temperature. In particular, the mobility of δ-AgAuS is as high as 6.94 × 104 cm2 V-1 s-1, which is of great research significance for the application of electronic devices in the future. Based on the above advantages, group-11 chalcogenide MNX monomolecular films have broad prospects in the field of nanoelectronics and optoelectronics in the future.
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Affiliation(s)
- Wei Shangguan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Cuixia Yan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Wenqing Li
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Chen Long
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518103, People's Republic of China.
| | - Liming Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Chenchen Qi
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Qiuyang Li
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Yan Zhou
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Yurou Guan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Lei Gao
- Faculty of Science, Kunming University of Science and Technology, Kunming, Yunnan 650000, People's Republic of China.
| | - Jinming Cai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
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19
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Rajput K, He J, Frauenheim T, Roy DR. Monolayer PC 3: A promising material for environmentally toxic nitrogen-containing multi gases. JOURNAL OF HAZARDOUS MATERIALS 2022; 422:126761. [PMID: 34418836 DOI: 10.1016/j.jhazmat.2021.126761] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2020] [Revised: 04/19/2021] [Accepted: 07/26/2021] [Indexed: 06/13/2023]
Abstract
Carbon and its analogous nanomaterials are beneficial for toxic gas sensors since they are used to increase the electrochemically active surface region and improve the transmission of electrons. The present article addresses a detailed investigation on the potential of the monolayer PC3 compound as a possible sensor material for environmentally toxic nitrogen-containing gases (NCGs), namely NH3, NO, and NO2. The entire work is carried out under the frameworks of density functional theory, ab-initio molecular dynamics simulations, and non-equilibrium Green's function approaches. The monolayer-gas interactions are studied with the van der Waals dispersion correction. The stability of pristine monolayer PC3 is confirmed through dynamical, mechanical, and thermal analyses. The mobility and relaxation time of 2D PC3 sensor material with NCGs are obtained in the range of 101-104 cm2 V-1 s-1 and 101-103 fs for armchair and zigzag directions, respectively. Out of six possible adsorption sites for toxic gases on the PC3 surface, the most prominent site is identified with the highest adsorption energy for all the NCGs. Considering the most stable configuration site of the NCGs, we have obtained relevant electronic properties by utilizing the band unfolding technique. The considerable adsorption energies are obtained for NO and NO2 compared to NH3. Although physisorption is observed for all the NCGs on the PC3 surface, NO2 is found to convert into NO and O at 5.05 ps (at 300 K) under molecular dynamics simulation. The maximum charge transfer (0.31e) and work function (5.17 eV) are observed for the NO2 gas molecule in the series. Along with the considerable adsorption energies for NO and NO2 gas molecules, their shorter recovery time (0.071 s and 0.037 s, respectively) from the PC3 surface also identifies 2D PC3 as a promising sensor material for those environmentally toxic gases. The experimental viability and actual implications for PC3 monolayer as NCGs sensor material are also confirmed by examining the humidity effect and transport properties with modeled sensor devices. The transport properties (I-V characteristics) reflect the significant sensitivity of PC3 monolayer toward NO and NO2 molecules. These results certainly confirm PC3 monolayer as a promising sensor material for NO and NO2 NCG molecules.
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Affiliation(s)
- Kaptan Rajput
- Materials and Biophysics Group, Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat, India
| | - Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany; Department of Physical and Macromolecular Chemistry & Charles University Centre of Advanced Materials, Faculty of Science, Charles University in Prague, Hlavova 8, Prague 2 128 43, Czech Republic
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany; Computational Science Research Center (CSRC) Beijing and Computational Science and Applied Research (CSAR) Institute, Shenzhen, Beijing 100193, China.
| | - Debesh R Roy
- Materials and Biophysics Group, Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat, India; Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany; Hanse-Wissenschaftskolleg (HWK), Lehmkuhlenbusch 4, 27753 Delmenhorst, Germany.
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20
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Wang B, Sun Y, Yang G. SiCP 4 Monolayer with a Direct Band Gap and High Carrier Mobility for Photocatalytic Water Splitting. J Phys Chem Lett 2022; 13:190-197. [PMID: 34967221 DOI: 10.1021/acs.jpclett.1c03708] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Photocatalytic water splitting is a promising method that uses sunlight to generate hydrogen from water to provide clean and renewable energy resources. Two-dimensional materials with abundant active sites are ideal candidates for achieving this goal; however, few of the known ones can meet the rigorous requirement of photocatalytic water splitting. By using first-principles swarm-intelligence search calculations, we have successfully identified two new semiconducting SiCP2 and SiCP4 monolayers. Their band-edge heights evidently straddle the redox potentials of water. For the more prominent SiCP4 monolayer, additional external biases of 0.32 V for water oxidation and 0.03 V for the hydrogen reduction half-reaction would be enough to drive its reaction sequences at pH 0, and it can spontaneously proceed to the water oxidation half-reaction in a neutral solution. Interestingly, the excellent optical absorbance ability (∼104 cm-1) and high carrier mobility (∼105 cm2 V-1 s-1) of SiCP2 and SiCP4 facilitate the utilization of sunlight and the fast transportation of photogenerated carriers. All of these properties make SiCP2 and SiCP4 monolayers promising candidates for applications in photocatalytic water splitting.
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Affiliation(s)
- Bo Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yuanhui Sun
- Department of Chemistry and Biochemistry, California State University, Northridge, Northridge, California 91330, United States
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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21
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Tao X, Jiang P, Dong Y, Yang X, Zheng X, Liu Y. Carbon phosphide nanoribbons with spatial inversion symmetry: robust generators of pure spin current with photogalvanic effect. Phys Chem Chem Phys 2022; 24:17131-17139. [DOI: 10.1039/d2cp01451c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Our recent work has demonstrated that spin-dependent photogalvanic effect (PGE) is an ideal way to induce pure spin current in certain centrosymmetric systems (Phys. Rev. B 102, 081402 (2020)), and...
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22
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Kumavat SR, Sachdeva G, Sonvane Y, Gupta SK. Structural and compositional properties of 2D CH 3NH 3PbI 3 hybrid halide perovskite: a DFT study. RSC Adv 2022; 12:25924-25931. [PMID: 36199593 PMCID: PMC9468801 DOI: 10.1039/d2ra02874c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 08/12/2022] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional (2D) hybrid halide perovskites have been scrutinized as candidate materials for solar cells because of their tunable structural and compositional properties. Results based on density functional theory demonstrate its thickness-dependent stability. We have observed that the bandgap decreases from the mono- to quad-layer because of the transformation from 2D towards 3D. Due to the transformation, the carrier mobility is lowered with the corresponding smaller effective mass. On the other hand, the multilayer structures have good optical properties with an absorption coefficient of about 105 cm−1. The calculated absorption spectra lie between 248 nm and 496 nm, leading to optical activity of the 2D multilayer CH3NH3PbI3 systems in the visible and ultraviolet regions. The strength of the optical absorption increases with an increase in thickness. Overall results from this theoretical study suggest that this 2D multilayer CH3NH3PbI3 is a good candidate for photovoltaic and optoelectronic device applications. We have studied 2D CH3NH3PbI3 and its multilayer halide perovskites. These systems have a high formation energy. The optical properties absorption spectra lie between 248 nm to 496 nm with an absorption coefficient of about 105 cm−1.![]()
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Affiliation(s)
- Sandip R. Kumavat
- Advanced Materials Lab, Department of Physics, Sardar Vallabhbhai National Institute of Technology, Surat 395007, India
| | - Geeta Sachdeva
- Department of Physics, Michigan Technological University, Houghton, Michigan 49931, USA
| | - Yogesh Sonvane
- Advanced Materials Lab, Department of Physics, Sardar Vallabhbhai National Institute of Technology, Surat 395007, India
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group, Department of Physics, St. Xavier’s College, Ahmedabad 380009, India
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23
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Spalenza P, de Souza FAL, Amorim RG, Scopel WL. Gas sensing detection in carbon phosphide monolayer: Improving CO x sensitivity through B-doping. Phys Chem Chem Phys 2022; 24:22067-22072. [DOI: 10.1039/d2cp02603a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A 2D materials engineering challenge is searching for a nanodevice capable to detect and distinguish gas molecules through electrical identification. Herein, the B-doped carbon phosphide monolayer (B-doped γ-CP) was explored...
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24
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Hu X, Liu W, Yang J, Zhang S, Ye Y. First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:25136-25142. [PMID: 34729574 DOI: 10.1039/d1cp03850h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electrical contacts at the van der Waals (vdW) interface between two-dimensional (2D) semiconductors and metal electrodes could dramatically affect the device performance. Herein, we construct a series of graphene (Gr)/XC (X = P, As, Sb, and Bi) vdW heterostructures, in which XC monolayers have aroused considerable attention recently as an emerging class of 2D semiconductors. The electronic structures and contact properties of Gr/XC vdW heterostructures are investigated systematically using first-principles calculations. The band structures indicate that both Gr/PC and Gr/AsC heterostructures form n-type Schottky contacts with Schottky barrier heights (SBHs) of 0.01 eV and 0.43 eV, respectively, while both Gr/SbC and Gr/BiC heterostructures preferably form Ohmic contacts. The different X atoms result in different work functions, electron flows, charge distributions and orientations of the dipole moment in Gr/XC heterostructures. Moreover, the tunneling probabilities increase with the increasing atom radius of X from P to Bi, indicating the most improved current and smaller contact resistance at the interfaces of Gr/BiC compared to Gr/PC, Gr/AsC and Gr/SbC heterostructures. Our work could provide meaningful information for designing high-performance nanoelectronic devices based on Gr/XC heterostructures.
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Affiliation(s)
- Xuemin Hu
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.
| | - Wenqiang Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jialin Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China. .,National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Yuanfeng Ye
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.
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25
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Wang B, Tang M, Lou H, Li F, Bergara A, Yang G. Wide Band Gap P 3S Monolayer with Anisotropic and Ultrahigh Carrier Mobility. J Phys Chem Lett 2021; 12:8481-8488. [PMID: 34450014 DOI: 10.1021/acs.jpclett.1c02363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Phosphorene has offered an additional advantage for developing new optoelectronic devices due to its anisotropic and high carrier mobility. However, its instability in air causes a rapid degradation of the performance of the device. Thus, improving the stability of phosphorene while maintaining its original properties has become the key to the development of high-performance electronic devices. Herein, we propose that the formation of two-dimensional (2D) P-rich P-S compounds could achieve this goal. First-principles swarm-structural searches revealed two previously unkonwn P3S and P2S monolayers. The P3S monolayer, consisting of n-bicyclo-P6 units along the armchair direction, exhibits anisotropic and wide band gap characteristics. Interestingly, its carrier mobility reaches 1.11 × 104 cm2 V-1 s-1 and is much higher than in phosphorene. Its electronic band gap and optical absorption coefficients in the ultraviolet region reach 2.71 eV and 105 cm-1, respectively. Additionally, the P3S monolayer has a high structural stability and resistance to air oxidation.
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Affiliation(s)
- Bo Wang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Meng Tang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Huan Lou
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Fei Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Aitor Bergara
- Departamento de Física, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
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Tang M, Wang B, Lou H, Li F, Bergara A, Yang G. Anisotropic and High-Mobility C 3S Monolayer as a Photocatalyst for Water Splitting. J Phys Chem Lett 2021; 12:8320-8327. [PMID: 34428049 DOI: 10.1021/acs.jpclett.1c02430] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Taking into account the high conductivity and stability of carbon materials, such as graphene, and the strong polar covalent bonding character of main-group compounds, we explore potential 2D materials in the C-S binary system through first-principles structure search calculations. Herein, a hitherto unknown semiconducting C3S monolayer is identified, consisting of well-known n-biphenyl and S atom linked benzenes, exhibiting an obvious direction-dependent atomic arrangement. Thus, it exhibits anisotropic mechanical properties and carrier mobility. Its electron mobility reaches 2.14 × 104 cm2 V-1 s-1 in the b direction, along which n-biphenyl units are arranged, and is much higher than that in the well-used MoS2 monolayer and black phosphorus. Meanwhile, the C3S monolayer has high optical absorption coefficients (105 cm-1), high thermal and dynamical stabilities, and a moderate ability to split water. All these desirable properties make the C3S monolayer a promising candidate for applications in novel optoelectronic devices.
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Affiliation(s)
- Meng Tang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Bo Wang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Huan Lou
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Fei Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Aitor Bergara
- Departamento de Física, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
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Shao L, Duan X, Li Y, Zeng F, Ye H, Su C, Ding P. Two-Dimensional Planar BGe Monolayer as an Anode Material for Sodium-Ion Batteries. ACS APPLIED MATERIALS & INTERFACES 2021; 13:29764-29769. [PMID: 34152741 DOI: 10.1021/acsami.1c08751] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Using first-principles swarm intelligence structure prediction computations, we explore a fully planar BGe monolayer with unique mechanical and electrical properties. Theoretical calculations reveal that a free-standing BGe monolayer has excellent stability, which is confirmed by the cohesive energy (compared to experimentally synthetic borophene and germanene monolayers), phonon modes (no imaginary frequencies appeared in the phonon spectrum), ab initio molecular dynamics (AIMD) simulations (no broken bonds and geometric reconstructions), and mechanical stability criteria. The metallic feature of the BGe monolayer can be maintained after absorbing different numbers of Na atoms, ensuring good electronic conductivity during the charge/discharge process. The calculated migration energy barrier, open-circuit voltage, and theoretical specific capacity of the BGe monolayer are much better than those of some other two-dimensional (2D) materials. These findings render the BGe monolayer a potential candidate for reversible Na-ion battery anode materials with desirable performance.
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Affiliation(s)
- Li Shao
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China
| | - Xiangyang Duan
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China
| | - Yan Li
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China
| | - Fanguang Zeng
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China
| | - Honggang Ye
- Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chuanxun Su
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Pei Ding
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China
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28
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Kistanov AA, Shcherbinin SA, Ustiuzhanina SV, Huttula M, Cao W, Nikitenko VR, Prezhdo OV. First-Principles Prediction of Two-Dimensional B 3C 2P 3 and B 2C 4P 2: Structural Stability, Fundamental Properties, and Renewable Energy Applications. J Phys Chem Lett 2021; 12:3436-3442. [PMID: 33789049 DOI: 10.1021/acs.jpclett.1c00411] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The existence of two novel hybrid two-dimensional (2D) monolayers, 2D B3C2P3 and 2D B2C4P2, has been predicted based on the density functional theory calculations. It has been shown that these materials possess structural and thermodynamic stability. 2D B3C2P3 is a moderate band gap semiconductor, while 2D B2C4P2 is a zero band gap semiconductor. It has also been shown that 2D B3C2P3 has a highly tunable band gap under the effect of strain and substrate engineering. Moreover, 2D B3C2P3 produces low barriers for dissociation of water and hydrogen molecules on its surface, and shows fast recovery after desorption of the molecules. The novel materials can be fabricated by carbon doping of boron phosphide and directly by arc discharge and laser ablation and vaporization. Applications of 2D B3C2P3 in renewable energy and straintronic nanodevices have been proposed.
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Affiliation(s)
- Andrey A Kistanov
- Nano and Molecular Systems Research Unit, University of Oulu, Oulu 90014, Finland
| | - Stepan A Shcherbinin
- Peter the Great Saint Petersburg Polytechnical University, Saint Petersburg 195251, Russia
- Southern Federal University, Rostov-on-Don 344006, Russia
| | - Svetlana V Ustiuzhanina
- Institute for Metals Superplasticity Problems Russian Academy of Sciences, Ufa 450001, Russia
| | - Marko Huttula
- Nano and Molecular Systems Research Unit, University of Oulu, Oulu 90014, Finland
| | - Wei Cao
- Nano and Molecular Systems Research Unit, University of Oulu, Oulu 90014, Finland
| | | | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
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Liu W, Bao H, Li Y, Ma F. Highly tunable electronic structure and linear dichroism in 90° twisted α-phosphorus carbide bilayer: a first-principles calculation. Phys Chem Chem Phys 2021; 23:7080-7087. [PMID: 33734249 DOI: 10.1039/d0cp06619b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
α-Phosphorus carbide (α-PC) shares a similar puckered structure with black phosphorus and has a high carrier mobility, showing great application potential in the future nano-electronic devices. Based on first-principles calculations, we reveal that an interlayer twist angle of 90° results in a symmetric band dispersion and spatial separation of electronic states in the α-PC bilayer, leading to isotropic electrical transport. Nevertheless, the anisotropic electronic states can be rebooted by introducing an out-of-plane electrostatic potential or an in-plane deformation potential, both of which can break the energy degeneracy and continuously modulate the bandgap of the 90° twisted bilayer. This highly tunable band structure can also induce a directionally exchangeable optical linear dichroism by flipping the voltage sign or changing the strain mode. These results indicate that the combination of the interlayer twist and gating/strain technique provides great flexibility to control the anisotropic behaviors in 2D puckered materials.
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Affiliation(s)
- Weiwei Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
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30
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Fu X, Yang H, Fu L, He C, Huo J, Guo J, Li L. Prediction of semiconducting SiP2 monolayer with negative Possion’s ratio, ultrahigh carrier mobility and CO2 capture ability. CHINESE CHEM LETT 2021. [DOI: 10.1016/j.cclet.2020.08.031] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
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Kistanov AA, Nikitenko VR, Prezhdo OV. Point Defects in Two-Dimensional γ-Phosphorus Carbide. J Phys Chem Lett 2021; 12:620-626. [PMID: 33382627 DOI: 10.1021/acs.jpclett.0c03608] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here, a comprehensive density functional theory-based investigation of seven kinds of point defects in a recently produced γ allotrope of 2D phosphorus carbide (γ-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in γ-PC, while the Stone-Wales defect is not presented in γ-PC due to its transition-metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of γ-PC is systematically identified. The formation of point defects in γ-PC is found to be less energetically favorable than in graphene, phosphorene, and MoS2. Meanwhile, defects can significantly modulate the electronic structure of γ-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.
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Affiliation(s)
- Andrey A Kistanov
- Nano and Molecular Systems Research Unit, University of Oulu, 90014 Oulu, Finland
| | | | - Oleg V Prezhdo
- National Research Nuclear University MEPhI, 115409 Moscow, Russia
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
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32
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Shao L, Duan X, Li Y, Zeng F, Ye H, Ding P. Two-dimensional Ga 2O 2 monolayer with tunable band gap and high hole mobility. Phys Chem Chem Phys 2021; 23:666-673. [PMID: 33336669 DOI: 10.1039/d0cp05171c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
By means of density functional theory and unbiased structure search computations, we systematically investigated the stability and electronic properties of a new Ga2O2 monolayer. The phonon spectra and ab initio molecular dynamics simulations show that the Ga2O2 monolayer is dynamically and thermally stable. Moreover, it also shows superior open-air stability. In particular, the Ga2O2 monolayer is an indirect semiconductor with a wide band gap of 2.752 eV and high hole mobility of 4720 cm2 V-1 s-1. Its band gap can be tuned flexibly in a large range by applied strain and layer control. It exhibits high absorption coefficients (>105 cm-1) in the ultraviolet region. The combined novel electronic properties of the Ga2O2 monolayer imply that it is a highly promising material for future applications in electronics and optoelectronics.
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Affiliation(s)
- Li Shao
- School of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China.
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33
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Wu J, Li JH, Yu YX. A Theoretical Analysis on the Oxidation and Water Dissociation Resistance on Group-IV Phosphide Monolayers. Chemphyschem 2020; 21:2539-2549. [PMID: 32990350 DOI: 10.1002/cphc.202000766] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2020] [Revised: 09/27/2020] [Indexed: 11/07/2022]
Abstract
Group-IV phosphide monolayers (MP, M=C, Si, Ge and Sn) provide a versatile platform for photocatalysts, as well as optoelectronic and nanoelectronic devices. Herein, comprehensive first-principles calculations and ab initio molecular dynamics (AIMD) simulations were performed to explore their stabilities in the air. We identified that the MP monolayers have excellent mechanical properties and their carrier mobilities are higher than that of phosphorene. The MP monolayers were predicted to possess superior oxidation resistance than the boron phosphide (BP) monolayer based on the proposed donation-backdonation theory. It was observed that the dissociation and chemisorption of a water molecule on the monolayers are kinetically difficult both in the water and in oxygen-water environments involving energy barriers of 1.28-3.48 eV. We also performed AIMD simulations at 300, 1000, 1200 and 1500 K. It is noteworthy that only the carbon phosphide (CP) monolayer can retain an intact structure at 1500 K, while the other three monolayers can just sustain to 1200 K. These results provide a guidance for their practical application and experimental fabrication.
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Affiliation(s)
- Jie Wu
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Jia-Hui Li
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Yang-Xin Yu
- Laboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P.R. China
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Chen T, Li H, Zhu Y, Liu D, Zhou G, Xu L. Carbon phosphide nanosheets and nanoribbons: insights on modulating their electronic properties by first principles calculations. Phys Chem Chem Phys 2020; 22:22520-22528. [PMID: 33000812 DOI: 10.1039/d0cp03615c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
A carbon phosphide (CP) monolayer, a 2D structure derived from the same 3-fold coordination found both in graphene and phosphorene, has been successfully synthesized in an experiment recently. In this paper, we investigated the modulation of electronic structures and transport characteristics of 2D nanosheets and quasi-1D nanoribbons of CP nanomaterials in the α-phase by using first-principles density functional theory simulation. The calculated band structures show that the band gap of 2D CP nanosheets progressively increases as the uniform biaxial strain changes from compression to stretching. However, the biaxial strain cannot change the indirect band gap behavior of the original 2D CP nanosheet. In addition, the band structures of quasi-1D nanoribbons with different styles of H-passivated zigzag edges have also been studied. The results show that the H-passivated zigzag PC ribbons with two P edges are semiconductors with indirect band gaps, and the gaps decrease with increasing width of ribbons. However, the H-passivated CP nanoribbons with one P-atom terminated edge in combination with one P-atom edge, and H-passivated CC nanoribbons with two C-atom terminated edges display metallic behaviors. The semi-conductive or metallic behaviors of zigzag CP nanoribbons can be explained by presenting the wave function of their energy band around the Fermi level. Finally, the electronic transport properties of different CP nanoribbon based nanojunctions are studied in which arise the interesting negative differential resistance or rectification effects in their current-voltage characteristic curves.
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Affiliation(s)
- Tong Chen
- School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 330013, China.
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35
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Fan K, Ying Y, Luo X, Huang H. Monolayer PC 5/PC 6: promising anode materials for lithium-ion batteries. Phys Chem Chem Phys 2020; 22:16665-16671. [PMID: 32658220 DOI: 10.1039/d0cp01133a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Employing two-dimensional (2D) materials as anodes for lithium-ion batteries (LIBs) is believed to be an effective approach to meet the growing demands of high-capacity next-generation LIBs. In this work, the first-principles density functional theory (DFT) calculations are employed to evaluate the potential application of two-dimensional phosphorus carbide (2D PCx, x = 2, 5, and 6) monolayers as anode materials for lithium-ion batteries. The 2D PCx systems are predicted to show outstanding structural stability and electronic properties. From the nudged elastic band calculations, the single Li atom shows extreme high diffusivities on the PCx monolayer with low energy barriers of 0.18 eV for PC2, 0.47 eV for PC5, and 0.44 eV for PC6. We further demonstrate that the theoretical specific capacity of monolayer PC5 and PC6 can reach up to 1251.7 and 1235.9 mA h g-1, respectively, several times that of a graphite anode used in commercial LIBs. These results suggest that both PC5 and PC6 monolayers are promising anode materials for LIBs. Our work opens a new avenue to explore novel 2D materials in energy applications, where phosphorus carbides could be used as high-performance anode in LIBs.
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Affiliation(s)
- Ke Fan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
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36
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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37
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Kistanov AA, Korznikova EA, Huttula M, Cao W. The interaction of two-dimensional α- and β-phosphorus carbide with environmental molecules: a DFT study. Phys Chem Chem Phys 2020; 22:11307-11313. [PMID: 32400830 DOI: 10.1039/d0cp01607a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The recently fabricated two-dimensional phosphorus carbide (PC) has been proposed for application in different nanodevices such as nanoantennas and field-effect transistors. However, the effect of ambient molecules on the properties of PC and, hence, the productivity of PC-based devices is still unknown. Herein a first-principles investigation is performed to study the most structurally stable α- and β-PC allotropes upon their interaction with environmental molecules, including NH3, NO, NO2, H2O, and O2. It is predicted that NH3, H2O, and O2 are physisorbed on α- and β-PC while NO and NO2 may easily form a covalent bond with the PC. Importantly, NO and NO2 possess low adsorption energies on PC which compared to these on graphene and phosphorene. Moreover, both molecules are strong acceptors to PC with a giant charge transfer of ∼1 e per molecule. For all the considered molecules PC is found to be more sensitive compared to graphene and phosphorene. The present work provides useful insight into the effects of environmental molecules on the structure and electronic properties of α- and β-PC, which may be important for their manufacturing, storage, and application in gas sensors and electronic devices.
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Affiliation(s)
- Andrey A Kistanov
- Nano and Molecular Systems Research Unit, University of Oulu, 90014 Oulu, Finland.
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38
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Yao H, Wang Q, Li J, Cai W, Wei Y, Wang B, Wang J. Two-dimensional few-layered PC 3 as a promising photocatalyst for overall water splitting. Phys Chem Chem Phys 2020; 22:9477-9486. [PMID: 32315000 DOI: 10.1039/d0cp01392g] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Recently, 2D carbon phosphides (PCs) have attracted much attention due to their superior electronic and photovoltaic properties suitable for potential applications in field effect transistors and photodetectors. In this work, we systematically investigate the stability, electronic properties, optical absorption and photocatalytic water splitting performance of few-layered PC3 by using the first principles calculation method. Numerical results indicate that both monolayered and bilayered PC3 can serve as efficient photocatalysts for overall water splitting due to their high stability, moderate band gaps, suitable band edge positions, anisotropic high carrier mobilities and strong capacity of solar absorption. Compared with monolayered PC3, bilayered PC3 displays higher carrier mobilities (2500-23 000 cm2 V-1 s-1) and a wider optical absorption spectrum. Moreover, by applying an in-plane biaxial strain, the utilization of solar energy and the pH range suitable for overall water splitting can be improved effectively for both monolayered and bilayered PC3. Our work reliably expands the potential application of 2D few-layered PC3 in the field of nano-electronics and nano-optoelectronics.
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Affiliation(s)
- Hui Yao
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Qiang Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Jianwei Li
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Weishan Cai
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Yadong Wei
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Bin Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Jian Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
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Abstract
In the present article, we report the thermoelectric properties of monolayer PC3 for the first time. The structural, vibrational, electronic and thermoelectric properties of PC3 are investigated in detail using a combination of density functional and Boltzman transport theory, and are compared to the carbon (graphene) and phosphorous (phosphorene) analogues. The results show that the PC3 monolayer is dynamically stable and robust upon oxygen contact as well. Also, PC3 is found to be an indirect band gap semiconductor in comparison to the zero gap carbon (graphene) and direct gap phosphorous (phosphorene) analogues. The effect of axial strains is also investigated on the electronic and thermoelectric properties of PC3. The present work reveals monolayer PC3 to be an excellent thermoelectric material with significant thermoelectric performance (ZT ∼ 1) for a large scale operating temperature range of 200-1200 K.
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Affiliation(s)
- Kaptan Rajput
- Materials and Biophysics Group, Department of Applied Physics, S. V. National Institute of Technology, Surat 395007, India.
| | - Debesh R Roy
- Materials and Biophysics Group, Department of Applied Physics, S. V. National Institute of Technology, Surat 395007, India. and Hanse-Wissenschaftskolleg (HWK), Lehmkuhlenbusch 4, 27753 Delmenhorst, Germany
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40
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Lin J, Yu T, Han F, Yang G. Computational predictions of two‐dimensional anode materials of metal‐ion batteries. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2020. [DOI: 10.1002/wcms.1473] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Jianyan Lin
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Tong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Fanjunjie Han
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
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41
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Liu Y, Song X, Yang Y, Li YQ, Zhao M, Mu Y, Li W. Anisotropic protein diffusion on nanosurface. NANOSCALE 2020; 12:5209-5216. [PMID: 32073019 DOI: 10.1039/c9nr08555f] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The unique puckered structure of α-phase phosphorene carbide (α-PC) results in anisotropic electronic and thermal transporting properties. In the present work, the interactions between a model protein, villin headpiece sub-domain (HP35), and the surface of α-PC and monolayer black phosphorus (MBP, another puckered nanostructure) were explored by molecular dynamic (MD) simulations. It is found that HP35 diffuses quickly only along the zigzag direction of the α-PC surface. On the MBP surface, HP35 migrates mainly along the zigzag direction but can also easily stride over the ridges and grooves along the armchair direction. Moreover, the mild binding strength between α-PC and HP35 does not cause distortion in the protein structure. The intrinsic biocompatibility of α-PC, which is distinct from several other widely studied nanomaterials, such as carbon nanotubes, graphene and MoS2, makes it a promising candidate in functional biomedical applications.
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Affiliation(s)
- Yang Liu
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
| | - Xiaohan Song
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
| | - Yanmei Yang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong, Key Laboratory of Molecular and Nano Probes, Ministry of Education, Institute of Molecular and Nano Science, Shandong Normal University, Jinan, 250014, China.
| | - Yong-Qiang Li
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
| | - Mingwen Zhao
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
| | - Yuguang Mu
- School of Biological Sciences, Nanyang Technological University, 637551, Singapore.
| | - Weifeng Li
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
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Liu Y, Yang Y, Qu Y, Li YQ, Zhao M, Li W. Mild lipid extraction and anisotropic cell membrane penetration of α-phase phosphorene carbide nanoribbons by molecular dynamics simulation studies. Phys Chem Chem Phys 2020; 22:23268-23275. [DOI: 10.1039/d0cp04145a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
α-PC penetrates the interior of membrane efficiently only along its zigzag direction rather than its armchair direction.
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Affiliation(s)
- Yang Liu
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Yanmei Yang
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong
- Key Laboratory of Molecular and Nano Probes, Ministry of Education
- Shandong Normal University
| | - Yuanyuan Qu
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Yong-Qiang Li
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Mingwen Zhao
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Weifeng Li
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
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43
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Singh D, Shukla V, Panda PK, Mishra YK, Rubahn HG, Ahuja R. Carbon-phosphide monolayer with high carrier mobility and perceptibleI–Vresponse for superior gas sensing. NEW J CHEM 2020. [DOI: 10.1039/c9nj06447h] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
We introduce the first-principle theoretical calculations to understand the adsorption mechanism of different gas molecules on monolayered carbon phosphide with semi-metallic electrical conductivity and graphene-like Dirac cone response.
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Affiliation(s)
- Deobrat Singh
- Condensed Matter Theory Group
- Materials Theory Division
- Department of Physics and Astronomy
- Uppsala University
- 75120 Uppsala
| | - Vivekanand Shukla
- Department of Microtechnology and Nanoscience (MC2)
- Chalmers University of Technology
- SE-412 96 Gothenburg
- Sweden
| | - Pritam Kumar Panda
- Condensed Matter Theory Group
- Materials Theory Division
- Department of Physics and Astronomy
- Uppsala University
- 75120 Uppsala
| | | | | | - Rajeev Ahuja
- Condensed Matter Theory Group
- Materials Theory Division
- Department of Physics and Astronomy
- Uppsala University
- 75120 Uppsala
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44
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Somaiya RN, Sonvane YA, Gupta SK. Exploration of the strain and thermoelectric properties of hexagonal SiX (X = N, P, As, Sb, and Bi) monolayers. Phys Chem Chem Phys 2020; 22:3990-3998. [DOI: 10.1039/d0cp00002g] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Si based group V binary compounds have shown better thermoelectric performance at room temperature in addition with ultrahigh carrier mobilities.
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Affiliation(s)
- Radha N Somaiya
- Advanced Materials Lab
- Department of Applied Physics
- S.V. National Institute of Technology
- Surat 395007
- India
| | - Yogesh Ashokbhai Sonvane
- Advanced Materials Lab
- Department of Applied Physics
- S.V. National Institute of Technology
- Surat 395007
- India
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group
- Department of Physics
- St Xavier's College
- Ahmedabad 380009
- India
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45
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Kistanov AA. The first-principles study of the adsorption of NH3, NO, and NO2 gas molecules on InSe-like phosphorus carbide. NEW J CHEM 2020. [DOI: 10.1039/d0nj01612h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Novel γ-PC is a promising reversible material for room-temperature gas sensors.
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Affiliation(s)
- Andrey A. Kistanov
- Nano and Molecular Systems Research Unit
- University of Oulu
- 90014 Oulu
- Finland
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46
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Wu Q, Xu WW, Lin D, Wang J, Zeng XC. Two-Dimensional Gold Sulfide Monolayers with Direct Band Gap and Ultrahigh Electron Mobility. J Phys Chem Lett 2019; 10:3773-3778. [PMID: 31244267 DOI: 10.1021/acs.jpclett.9b01312] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
It remains a pressing task to search for new two-dimensional (2D) semiconducting materials for future-generation electronic applications. By using density functional theory computations and global structure prediction methods, we demonstrate two new gold sulfide monolayers (2D Au2S and AuS), both exhibiting excellent electronic properties and high stabilities. All the gold sulfide monolayers are semiconductors with band gaps in the range 1.0-3.6 eV. In particular, the α-Au2S monolayer is predicted to possess a direct band gap of 1.0 eV and extremely high electron and hole mobilities of 8.45 × 104 and 0.40 × 104 cm2 V-1 S-1, respectively. The phonon dispersion calculations and ab initio molecular dynamics simulations indicate that the gold sulfide monolayers exhibit robust dynamical and thermal stabilities. Moreover, the α-Au2S monolayer appears to show strong oxidation resistibility. The novel electronic properties, coupled with structural and chemical stabilities, endow the new gold sulfide monolayers to be highly promising for future applications in nanoelectronics.
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Affiliation(s)
- Qisheng Wu
- School of Physics , Southeast University , Nanjing 211189 , P. R. China
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Wen Wu Xu
- School of Physical Science and Technology , Ningbo University , Ningbo 315211 , P. R. China
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Dongdong Lin
- School of Physical Science and Technology , Ningbo University , Ningbo 315211 , P. R. China
| | - Jinlan Wang
- School of Physics , Southeast University , Nanjing 211189 , P. R. China
| | - Xiao Cheng Zeng
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
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47
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Fu X, Guo J, Li L, Dai T. Structural and electronic properties of predicting two-dimensional BC2P and BC3P3 monolayers by the global optimization method. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.04.042] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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48
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Modulation of vertical strain and electric field on C3As/arsenene heterostructure. APPLIED NANOSCIENCE 2019. [DOI: 10.1007/s13204-019-01034-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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49
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Mandal G, Vaňhara P, Havel J. Laser ablation synthesis of carbon-phosphides from graphene/nanodiamond-phosphorus composite precursors: Laser desorption ionisation time-of-flight mass spectrometry. RAPID COMMUNICATIONS IN MASS SPECTROMETRY : RCM 2019; 33:520-526. [PMID: 30604469 DOI: 10.1002/rcm.8379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2018] [Revised: 12/21/2018] [Accepted: 12/23/2018] [Indexed: 06/09/2023]
Abstract
RATIONALE Carbon-phosphides are new and promising strategic materials with applications e.g. in optoelectronics. However, their chemistry and methods of synthesis are not completely understood, and only a limited number of C-P clusters have been detected up to now. Laser ablation synthesis (LAS) or laser desorption ionisation (LDI) has great potential to generate Cm Pn clusters in the gas phase and to act as the basis for the development of new technology. METHODS The LAS of carbon phosphides using mixtures of nano-carbon sources (graphene, nanodiamonds) with phosphorus allotropes (red, black, and phosphorene) was examined. Since phosphorene is not commercially available, it was synthesised. A reflectron time-of-flight mass spectrometer was used to produce and identify the C-P clusters. A transmission electron microscope was used to characterise the prepared composites. RESULTS LDI of various carbon-phosphorus composites generated a range of carbon-phosphides. From graphene-red phosphorus, Cm P+ (m = 3-47), Cm P2 + (m = 2-44), Cm P3 + (m = 1-42), Cm P4 + (m = 1-39), Cm P5 + (m = 1-37), Cm P6 + (m = 1-34), Cm P7 + (m = 1-31), Cm P8 + (m = 1-29), Cm P9 + (m = 1-26), Cm P10 + (m = 1-24), Cm P11 + (m = 1-21), and Cm P12 + (m = 1-19) clusters were detected, while nanodiamond composites with red/black phosphorus and with phosphorene yielded C24 P5 + 2n + (n = 0-28), C24 P5 + 2n + (n = 0-16), and C24 P5 + 2n + (n = 0-14) clusters, respectively. In total, over 300 new carbon-phosphide clusters were generated. CONCLUSIONS The novel series of carbon-phosphide clusters generated from graphene or nanodiamond composites with red/black phosphorus or with phosphorene demonstrated rich carbon-phosphide chemistry that might inspire the development of novel nano-materials with specific properties.
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Affiliation(s)
- Govinda Mandal
- Department of Chemistry, Faculty of Science, Masaryk University, A14/326-Kamenice 753/5, 625 00, Brno, Czech Republic
| | - Petr Vaňhara
- Department of Histology and Embryology, Faculty of Science, Masaryk University, Kamenice 3, 625 00, Brno, Czech Republic
- International Clinical Research Center, St. Anne's University Hospital, Pekařská 53, 656 91, Brno, Czech Republic
| | - Josef Havel
- Department of Chemistry, Faculty of Science, Masaryk University, A14/326-Kamenice 753/5, 625 00, Brno, Czech Republic
- International Clinical Research Center, St. Anne's University Hospital, Pekařská 53, 656 91, Brno, Czech Republic
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50
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Yu T, Zhao Z, Sun Y, Bergara A, Lin J, Zhang S, Xu H, Zhang L, Yang G, Liu Y. Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility. J Am Chem Soc 2019; 141:1599-1605. [DOI: 10.1021/jacs.8b11350] [Citation(s) in RCA: 103] [Impact Index Per Article: 20.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Tong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Ziyuan Zhao
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yuanhui Sun
- College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China
| | - Aitor Bergara
- Departmento de Física de la Materia Condensada, Universidad del País Vasco, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Jianyan Lin
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Shoutao Zhang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Haiyang Xu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Lijun Zhang
- College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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