Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation

Non-excitonic defect-assisted radiative transitions are responsible for new D-type blinking in ternary quantum dots

This work addresses the issue of dark states formation in QDs by cooperative excitonic and intrinsic defect-assisted radiative transitions. Here we refer to the observed blinking as D-type to distinguish it from purely excitonic types. It is shown experimentally that defect-assisted radiative relaxations in a single I-III-VI QD result in atypical blinking characteristics that cannot be explained on the basis of charged exciton models. In addition to the excitonic channel, it has been proposed that defect-assisted kinetics can also form blinking patterns. Two conditions for the formation of dark states have been identified which are related to correlation and competition when considering photons emitted from bright defects. Two transition schemes have therefore been proposed. The first transition scheme includes time-correlated trapping of more than one electron at a single trap centre. This is used to simulate variations in the defect's charge state and switching between radiative/nonradiative transitions. The latter scheme, on the other hand, involves uncorrelated trapping and radiative relaxations from two different types of defects (competition). Both schemes are seen to play an equal role in radiative processes in I-III-VI QDs. Considered together, the proposed models can reflect the experimental data with very good accuracy, providing a better understanding of the underlying physics. An important implication of these schemes is that dark states formation doesn't have to be limited to mechanisms that involve charged excitons, and it may also be observed for independent defect assisted kinetics. This is especially valid for highly defected or multinary QDs.

FRET-Based Analysis of AgInS2/ZnAgInS/ZnS Quantum Dot Recombination Dynamics

Ternary quantum dots (QDs) are very promising nanomaterials with a range of potential applications in photovoltaics, light-emitting devices, and biomedicine. Despite quite intensive studies of ternary QDs over the last years, the specific relaxation channels involved in their emission mechanisms are still poorly understood, particularly in the corresponding core-shell nanostructures. In the present work, we have studied the recombination pathways of AgInS₂ QDs stabilized with the ZnAgInS alloy layer and the ZnS shell (AIS/ZAIS/ZnS QDs) using time-resolved fluorescence spectroscopy. We have also investigated FRET in complexes of AIS/ZAIS/ZnS QDs and cyanine dyes with the absorption bands overlapping in the different regions of the QD emission spectrum, which allowed us to selectively quench the radiative transitions of the QDs. Our studies have demonstrated that FRET from QDs to dyes results in decreasing of all QD PL decay components with the shortest lifetime decreasing the most and the longest one decreasing the least. This research presents important approaches for the investigation of ternary QD luminescence mechanisms by the selective quenching of recombination pathways. These studies are also essential for potential applications of ternary QDs in photodynamic therapy, multiplex analysis, and time-resolved FRET sensing.

Optoelectronic Properties of Ternary I-III-VI2 Semiconductor Nanocrystals: Bright Prospects with Elusive Origins

Colloidal nanocrystals of ternary I-III-VI₂ semiconductors are emerging as promising alternatives to Cd- and Pb-chalcogenide nanocrystals because of their inherently lower toxicity, while still offering widely tunable photoluminescence. These properties make them promising materials for a variety of applications. However, the realization of their full potential has been hindered by both their underdeveloped synthesis and the poor understanding of their optoelectronic properties, whose origins are still under intense debate. In this Perspective, we provide novel insights on the latter aspect by critically discussing the accumulated body of knowledge on I-III-VI₂ nanocrystals. From our analysis, we conclude that the luminescence in these nanomaterials most likely originates from the radiative recombination of a delocalized conduction band electron with a hole localized at the group-I cation, which results in broad bandwidths, large Stokes shifts, and long exciton lifetimes. Finally, we highlight the remaining open questions and propose experiments to address them.

Stark Effect and Environment-Induced Modulation of Emission in Single Halide Perovskite Nanocrystals

Organic-inorganic halide perovskites have emerged as promising materials for next-generation solar cells. In nanostructured form also, these materials are excellent candidates for optoelectronic applications such as lasers and light-emitting diodes for displays and lighting. While great progress has been achieved so far in optimizing the intrinsic photophysical properties of perovskite nanocrystals (NCs), in working optoelectronic devices, external factors, such as the effects of conducting environment and the applied electric field on exciton generation and photon emission, have been largely unexplored. Here, we use NCs of the all-inorganic perovskite CsPbBr₃ dispersed polyvinyl carbazole, a hole-conductor, and in poly(methyl methacrylate), an insulator, to examine the effects of applied electric field and conductivity of the matrix on the perovskite photophysics at the single-particle level. We found that the conducting environment causes a significant decrease of photoluminescence (PL) brightness of individual NCs due the appearance of intermediate-intensity emitting states with significantly shortened lifetime. Applied electric field has a similar effect and, in addition, causes a nonlinear spectral shift of the PL maxima, a combination of linear and quadratic Stark effects caused by environment-induced polarity and field-related polarizability. The environment and electric-field effects are explained by ionization of the NCs through hole transfer and emission of the resulting negatively charged excitons.

Wavelength-Tunable Band-Edge Photoluminescence of Nonstoichiometric Ag-In-S Nanoparticles via Ga3+ Doping

The nonstoichiometry of I-III-VI semiconductor nanoparticles, especially the ratio of group I to group III elements, has been utilized to control their physicochemical properties. We report the solution-phase synthesis of nonstoichiometric Ag-In-S and Ag-In-Ga-S nanoparticles and results of the investigation of their photoluminescence (PL) properties in relation to their chemical compositions. While stoichiometric AgInS₂ nanoparticles simply exhibited only a broad PL band originating from defect sites in the particles, a narrow band edge PL peak newly appeared with a decrease in the Ag fraction in the nonstoichiometric Ag-In-S nanoparticles. The relative PL intensity of this band edge emission with respect to the defect-site emission was optimal at a Ag/(Ag + In) value of ca. 0.4. The peak wavelength of the band edge emission was tunable from 610 to 500 nm by increased doping with Ga³⁺ into Ag-In-S nanoparticles due to an increase of the energy gap. Furthermore, surface coating of Ga³⁺-doped Ag-In-S nanoparticles, that is, Ag-In-Ga-S nanoparticles, with a GaS _x shell drastically and selectively suppressed the broad defect-site PL peak and, at the same time, led to an increase in the PL quantum yield (QY) of the band edge emission peak. The optimal PL QY was 28% for Ag-In-Ga-S@GaS _x core-shell particles, with green band-edge emission at 530 nm and a full width at half-maximum of 181 meV (41 nm). The observed wavelength tunability of the band-edge PL peak will facilitate possible use of these toxic-element-free I-III-VI-based nanoparticles in a wide area of applications.

Photophysics and electroluminescence of single nanocrystals of halide perovskites and related nanomaterials

We report simultaneous photoluminescence and electroluminescence single-particle study of nanocrystals of inorganic halide perovskite CsPbBr3, as well as of ternary I-III-IV semiconductor quantum dots.

Influence of Zn on the photoluminescence of colloidal (AgIn)xZn2(1−x)S2 nanocrystals

We study the effect of Zn on the photophysical properties of a family of group I–III–VI nanocrystals (NCs), namely in solid solutions of (AgIn)_xZn_2(1−x)S₂ (ZAIS).