Long-term stability improvement of light-emitting diode using highly transparent graphene oxide paste

Direct Synthesis of Methyl Chlorosilanes from Pd-Mg-SiO2 Substrates Using Mechanochemistry

The direct reaction of methyl chloride with magnesium and palladium infused silica substrates to synthesize methyl chlorosilanes is reported. First, high energy ball milling on solid Mg-SiO₂ mixtures produces elemental silicon and MgO. When PdCl₂ is infused into the mixture, after additional ball milling and high-temperature reduction under H₂ , dipalladium silicide (Pd₂ Si) is produced. The silicon of the Pd₂ Si readily reacts with MeCl under Müller-Rochow reaction conditions, to produce methyl chlorosilanes at yield ratios analogous to those of the traditional process. The dominant product is Me₂ SiCl₂ (selectivity > 30%), followed by MeSiCl₃ and Me₃ SiCl, with minor amounts of the remaining chlorosilanes. Silicon conversion exceeds 20% for most of the substrates. The elemental palladium, which remains within the Pd-Mg-SiO₂ contact mass is re-converted to Pd₂ Si at the next H₂ /high-temperature treatment and reacts again with MeCl to repeat the methyl chlorosilane production. In principle, the resulting cycle of the mechanochemically induced formation of Pd₂ Si followed by the reaction with MeCl can be repeated until the starting SiO₂ converts completely to methyl chlorosilanes.

Improving thermal and electrical stability of silver nanowire network electrodes through integrating graphene oxide intermediate layers

Silver nanowire (Ag NW)-based flexible and transparent electrodes are a promising candidate for various electronic and optoelectronic applications. However, thermal and electrical instabilities of Ag NW networks during operation and post treatments need to be improved for practical applications. In this work, Ag NW/Graphene Oxide (GO) hybrid films with a multilayer structure were developed, in which transparent GO sheets were inserted between Ag NWs. For the pristine Ag NW networks, contacted NWs exhibited poorer thermal stability than individual NWs as faster Ag diffusion between NWs led to the breakage of the junctions at working temperatures, hence leading to the overall device failure. In contrast, the GO intermediate layers hindered the Ag diffusion between NWs in the Ag NW/Graphene Oxide hybrid films and maintained the junction structure, giving rise to enhanced thermal stability compared to the pristine networks and the GO-covered samples. For electrical tests, unlike the network degradation under annealing treatments, a local deterioration perpendicular to the current flow was directly observed after electrical breakdown, which was attributed to high local temperature under large applied voltage. The electrical failure of the devices was related to the network structure and defects. Furthermore, the pristine devices showed notable variation of failure voltage, which in the hybrid devices is more uniform and improved in general.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm^-2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain.

Interface Anchored Effect on Improving Working Stability of Deep Ultraviolet Light-Emitting Diode Using Graphene Oxide-Based Fluoropolymer Encapsulant

The graphene oxide (GO)-based fluoropolymer is first proposed as an interface encapsulant to improve the light extraction efficiency and achieve the ultralong working stability of deep ultraviolet light-emitting diodes (DUV-LEDs), benefitting from its superior interface performance based on an anchored effect. For the GO-based fluoropolymer composite, the anchored structure is designed to effectively and tightly rivet the quartz lens on the DUV-LED chip by using the interface reaction between GO embedded in fluoropolymer and 3-aminopropyltriethoxy-silane grafted on the surfaces. Experimental results show that on the basis of the interface anchored effect, the air voids in the interface layer of DUV-LED are reduced by 84%, leading to an improvement of the light output power by 15% and a decrease of the junction temperature by 5%, by virtue of the sealing characteristics of the 0.10 wt % GO-based fluoropolymer. In addition, the steady working time is dramatically improved by 660% and it was attributed to the good interface anchored bonding of the 0.10 wt % GO-based fluoropolymer. This novel graphene oxide-based fluoropolymer is believed to provide a feasible and effective interface encapsulant to improve the performance of DUV-LEDs.

Improvement of Interface Thermal Resistance for Surface-Mounted Ultraviolet Light-Emitting Diodes Using a Graphene Oxide Silicone Composite

In this study, based on silicone composites with graphene oxide (GO) as a filler, a novel packaging strategy was proposed to reduce the interface thermal resistance of surface-mounted ultraviolet light-emitting diodes (UV-LEDs) and provide a potentially effective way for enhancing the long-term stability of devices. The 4 wt % GO-based composite showed an excellent performance in the thermal conductivity, and the interface thermal resistance was reduced by 34% after embedding the 4 wt % GO-based composite into the air gaps of bonding interfaces in the UV-LEDs, leading to a reduction of junction temperature by 1.2 °C under the working current of 1000 mA. Meanwhile, a decrease of thermal stress in bonding interfaces was obtained based on the finite element analysis. What is more, it was found that the lifetime of UV-LEDs with the proposed structure could be obviously improved. It is believed to provide a simple and effective approach for improving the performance of surface-mounted UV-LEDs.