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Feng Y, Khalid M, Xiao H, Hu P. Two-dimensional material assisted-growth strategy: new insights and opportunities. NANOTECHNOLOGY 2024; 35:322001. [PMID: 38688246 DOI: 10.1088/1361-6528/ad4553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 04/30/2024] [Indexed: 05/02/2024]
Abstract
The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.
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Affiliation(s)
- Yuming Feng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Mansoor Khalid
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Haiying Xiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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Azpeitia J, Palacio I, Martínez J, Muñoz-Ochando I, Lauwaet K, Mompean F, Ellis G, García-Hernández M, Martín-Gago J, Munuera C, López M. Oxygen intercalation in PVD graphene grown on copper substrates: A decoupling approach. APPLIED SURFACE SCIENCE 2020; 529:147100. [PMID: 33154607 PMCID: PMC7116314 DOI: 10.1016/j.apsusc.2020.147100] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We investigate the intercalation process of oxygen in-between a PVD-grown graphene layer and different copper substrates as a methodology for reducing the substrate-layer interaction. This growth method leads to an extended defect-free graphene layer that strongly couples with the substrate. We have found, by means of X-ray photoelectron spectroscopy, that after oxygen exposure at different temperatures, ranging from 280 °C to 550 °C, oxygen intercalates at the interface of graphene grown on Cu foil at an optimal temperature of 500 °C. The low energy electron diffraction technique confirms the adsorption of an atomic oxygen adlayer on top of the Cu surface and below graphene after oxygen exposure at elevated temperature, but no oxidation of the substrate is induced. The emergence of the 2D Raman peak, quenched by the large interaction with the substrate, reveals that the intercalation process induces a structural undoing. As suggested by atomic force microscopy, the oxygen intercalation does not change significantly the surface morphology. Moreover, theoretical simulations provide further insights into the electronic and structural undoing process. This protocol opens the door to an efficient methodology to weaken the graphene-substrate interaction for a more efficient transfer to arbitrary surfaces.
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Affiliation(s)
- J. Azpeitia
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - I. Palacio
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - J.I. Martínez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - I. Muñoz-Ochando
- Instituto de Ciencia y Tecnología de Polímeros, Consejo Superior de Investigaciones Científicas, ES-28006 Madrid, Spain
| | - K. Lauwaet
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - F.J. Mompean
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - G.J. Ellis
- Instituto de Ciencia y Tecnología de Polímeros, Consejo Superior de Investigaciones Científicas, ES-28006 Madrid, Spain
| | - M. García-Hernández
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - J.A. Martín-Gago
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - C. Munuera
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
| | - M.F. López
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco ES-28049, Madrid, Spain
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Gao X, Yu C, He Z, Song X, Liu Q, Zhou C, Guo J, Cai S, Feng Z. Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors. NANOSCALE ADVANCES 2019; 1:1130-1135. [PMID: 36133206 PMCID: PMC9473297 DOI: 10.1039/c8na00203g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2018] [Accepted: 12/12/2018] [Indexed: 05/14/2023]
Abstract
High-quality graphene materials and high-performance graphene transistors have attracted much attention in recent years. To obtain high-performance graphene transistors, large single-crystal graphene is needed. The synthesis of large-domain-sized single-crystal graphene requires low nucleation density; this can lead to a lower growth rate. In this study, a Ni-foam assisted structure was developed to control the nucleation density and growth rate of graphene by tuning the flow dynamics. Lower nucleation density and high growth rate (∼50 μm min-1) were achieved with a 4 mm-gap Ni foam. With the graphene transistor fabrication process, a pre-deposited Au film as the protective layer was used during the graphene transfer. Graphene transistors showed good current saturation with drain differential conductance as low as 0.04 S mm-1 in the strong saturation region. For the devices with gate length of 2 μm, the intrinsic cut-off frequency f T and maximum oscillation frequency f max were 8.4 and 16.3 GHz, respectively, with f max/f T = 1.9 and power gain of up to 6.4 dB at 1 GHz. The electron velocity saturation induced by the surface optical phonons of SiO2 substrates was analyzed. Electron velocity saturation and ultra-thin Al2O3 gate dielectrics were thought to be the reasons for the good current saturation and high power gain of the graphene transistors.
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Affiliation(s)
- Xuedong Gao
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Cui Yu
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Zezhao He
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Xubo Song
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Qingbin Liu
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Chuangjie Zhou
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Jianchao Guo
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Shujun Cai
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
| | - Zhihong Feng
- National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051 Hebei Province China +86-311-8709-1835
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Plan-view transmission electron microscopy specimen preparation for atomic layer materials using a focused ion beam approach. Ultramicroscopy 2018; 197:95-99. [PMID: 30537672 DOI: 10.1016/j.ultramic.2018.12.001] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2018] [Revised: 11/01/2018] [Accepted: 12/04/2018] [Indexed: 11/21/2022]
Abstract
Using the focused ion beam (FIB) to prepare plan-view transmission electron microscopy (TEM) specimens is beneficial for obtaining structural information of two-dimensional atomic layer materials, such as graphene and molybdenum disulfide (MoS2) nanosheets supported on substrates. The scanning electron microscopy (SEM) image in a dual-beam FIB-SEM can accurately locate an area of interest for specimen preparation. Besides, FIB specimen preparation avoids damages and hydrocarbon contamination that are usually produced in other preparation methods, in which chemical etching and polymer adhesion layers are used. In order to reduce harmful ion-beam bombardment and re-deposition on the thin atomic layers during FIB specimen preparation, we develop a method to protect the atomic layers by making a "microcapsule" to insulate the sample surface. The method is applied respectively to prepare plan-view TEM specimens of a graphene sheet with multiple adlayers and MoS2 atomic layers. Useful electron diffraction results can be obtained from these specimens for understanding the interlayer orientation relationships in the two materials. Auger electron spectroscopy analysis further confirms that the sample surface is free from contamination under the sufficient protection given by the proposed method.
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Sun X, Su Z, Zhang J, Liu X, Li Y, Yu F, Cheng X, Zhao X. Graphene Nucleation Preference at CuO Defects Rather Than Cu 2O on Cu(111): A Combination of DFT Calculation and Experiment. ACS APPLIED MATERIALS & INTERFACES 2018; 10:43156-43165. [PMID: 30396269 DOI: 10.1021/acsami.8b13626] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
It is well-known that reducing the nucleation density is an effective way to enhance the growth quality of graphene. In this work, we explore the mechanism of graphene nucleation and growth around CuO defects on a Cu(111) substrate by using density functional theory combined with the nudged elastic band method. The defect formation mechanism at the initial nucleation stage is also studied. Our calculation results of the C adsorption energy and the reaction barrier of C-C dimer formation illustrate that the initial nucleation of graphene could be promoted by artificially introducing CuO defects on a Cu(111) surface and the nucleation on the clean Cu(111) substrate could thus be suppressed. These conclusions have been verified by graphene growth experiments using a chemical vapor deposition method. Further studies showed that graphene grown around CuO "seed crystals" could maintain its structural integrity without significantly producing defective carbon rings. This work provides a fundamental understanding and theoretical guidance for the controllable preparation of large-dimension and high-quality graphene by artificially introducing CuO seeds.
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Affiliation(s)
- Xiucai Sun
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Zhen Su
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Jing Zhang
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Xizheng Liu
- Tianjin Key Laboratory of Advanced Functional Porous Materials, Institute for New Energy Materials and Low-carbon Technologies, School of Materials Science and Engineering , Tianjin University of Technology , Tianjin 300384 , PR China
| | - Yanlu Li
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Fapeng Yu
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Xiufeng Cheng
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
| | - Xian Zhao
- Institute of Crystal Materials and State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , PR China
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Mutlu Z, Ruiz I, Wu RJ, Ionescu R, Shahrezaei S, Temiz S, Ozkan M, Mkhoyan KA, Ozkan CS. Chemical vapor deposition of partially oxidized graphene. RSC Adv 2017. [DOI: 10.1039/c7ra05097f] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Mutlu et al. reported on chemical vapor deposition (CVD) of partially oxidized graphene films on copper foils under near-atmospheric pressure.
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Affiliation(s)
- Zafer Mutlu
- Materials Science and Engineering Program
- University of California
- Riverside
- USA
| | - Isaac Ruiz
- Department of Electrical and Computer Engineering
- University of California
- Riverside
- USA
| | - Ryan J. Wu
- Department of Chemical Engineering and Materials Science
- University of Minnesota
- Minneapolis
- USA
| | - Robert Ionescu
- Materials Science and Engineering Program
- University of California
- Riverside
- USA
| | - Sina Shahrezaei
- Materials Science and Engineering Program
- University of California
- Riverside
- USA
| | - Selcuk Temiz
- Materials Science and Engineering Program
- University of California
- Riverside
- USA
| | - Mihrimah Ozkan
- Department of Electrical and Computer Engineering
- University of California
- Riverside
- USA
| | - K. Andre Mkhoyan
- Department of Chemical Engineering and Materials Science
- University of Minnesota
- Minneapolis
- USA
| | - Cengiz S. Ozkan
- Materials Science and Engineering Program
- University of California
- Riverside
- USA
- Department of Mechanical Engineering
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