An N-oxide containing conjugated semiconducting polymer with enhanced electron mobility via direct (hetero)arylation polymerization

The N-oxide containing conjugated semiconducting polymer is synthesized by direct (hetero)arylation polymerization and exhibit enhanced electron mobility compared to its non-oxide analogous polymer.

Synthesis, Molecular Packing, and Electrical Properties of New Regioisomeric n-type Semiconducting Molecules with Modification of Alkyl Substituents Position

We design and synthesize a series of regioisomeric n-type small molecules, which have an identical diketopyrrolopyrrole (DPP) core and 2-(2,3-dihydro-3-oxo-1H-inden-1-ylidene)propanedinitrile (INCN) terminal groups with octyl substituents at different positions. The isomeric structures are confirmed by two-dimensional NMR spectroscopy based on the heteronuclear multiple-bond coupling method. Incorporation of the electron-deficient DPP and strongly electron-withdrawing INCN groups yields deep frontier molecular orbitals with n-type charge-transport properties in solution-processed organic field-effect transistors (OFETs). Interestingly, a minor change in the substitution position of the octyl side chains significantly influences the optoelectronic and morphological properties of the thin film. The polycrystalline morphology of the as-cast films is reorganized differently with thermal annealing depending on the octyl topology, significantly affecting the OFET performance. With thermal treatment at 200 °C, the kinked DPP(EH)-INCNO1 (EH = 2-ethylhexyl) structures transform into single crystalline-like structures, exhibiting a remarkably improved electron mobility up to ∼0.6 cm²V^-1 s^-1 compared with DPP(EH)-INCNO2 isomers. The more linear DPP(EH or HD)-INCNO2 (HD = 2-hexyldecyl) molecules become more crystalline with thermal treatments, but their polycrystalline packing structures with large grain boundaries are the main reason for their lower electron mobility. When the solubilizing alkyl substituents are selected, careful molecular design is needed, with consideration of both the solubility and intermolecular packing, for optimizing the optoelectronic properties.

Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for n-Type Thin-Film Transistors

Diketopyrrolopyrrole (DPP)-based copolymers have received considerable attention as promising semiconducting materials for high-performance organic thin-film transistors (OTFTs). However, these polymers typically exhibit p-type or ambipolar charge-transporting characteristics in OTFTs due to their high-lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP-based n-type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn-DPP show narrow band gaps as low as 1.27 eV and gradually down-shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well-delocalized π-system, and favorable polymer chain packing, the optimal polymer in the series shows promising n-type charge transport with an electron mobility up to 0.48 cm² V^-1 s^-1 in OTFTs, which is among the highest values for the DPP-based n-type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high-performance n-type polymeric semiconductors.

Theoretical Calculations for Highly Selective Direct Heteroarylation Polymerization: New Nitrile-Substituted Dithienyl-Diketopyrrolopyrrole-Based Polymers

Direct Heteroarylation Polymerization (DHAP) is becoming a valuable alternative to classical polymerization methods being used to synthesize π-conjugated polymers for organic electronics applications. In previous work, we showed that theoretical calculations on activation energy (E_a) of the C–H bonds were helpful to rationalize and predict the selectivity of the DHAP. For readers’ convenience, we have gathered in this work all our previous theoretical calculations on E_a and performed new ones. Those theoretical calculations cover now most of the widely utilized electron-rich and electron-poor moieties studied in organic electronics like dithienyl-diketopyrrolopyrrole (DT-DPP) derivatives. Theoretical calculations reported herein show strong modulation of the E_a of C–H bond on DT-DPP when a bromine atom or strong electron withdrawing groups (such as fluorine or nitrile) are added to the thienyl moiety. Based on those theoretical calculations, new cyanated dithienyl-diketopyrrolopyrrole (CNDT-DPP) monomers and copolymers were prepared by DHAP and their electro-optical properties were compared with their non-fluorinated and fluorinated analogues.

Performance Comparisons of Polymer Semiconductors Synthesized by Direct (Hetero)Arylation Polymerization (DHAP) and Conventional Methods for Organic Thin Film Transistors and Organic Photovoltaics

C-C bond forming reactions are central to the construction of π-conjugated polymers. Classical C-C bond forming reactions such as the Stille and Suzuki coupling reactions have been widely used in the past for this purpose. More recently, direct (hetero)arylation polymerization (DHAP) has earned a place in the spotlight with an increasing number of π-conjugated polymers being produced using this atom-economic and more sustainable chemistry. As semiconductors in organic electronics, the device performances of the polymers made by DHAP are of great interest and importance. This review compares the device performances of some representative π-conjugated polymers made using the DHAP method with those made using the conventional C-C bond forming reactions when they are used as semiconductors in organic thin film transistors (OTFTs) and organic photovoltaics (OPVs).

Direct heteroarylation polymerization: guidelines for defect-free conjugated polymers

Direct (hetero)arylation polymerization (DHAP) has emerged as a valuable and atom-economical alternative to traditional cross-coupling methods for the synthesis of low-cost and efficient conjugated polymers for organic electronics. However, when applied to the synthesis of certain (hetero)arene-based materials, a lack of C-H bond selectivity has been observed. To prevent such undesirable side-reactions, we report the design and synthesis of new, bulky, phosphine-based ligands that significantly enhance selectivity of the DHAP process for both halogenated and non-halogenated electron-rich and electron-deficient thiophene-based comonomers. To better understand the selectivity issues, density functional theory (DFT) calculations have been performed on various halogenated and non-halogenated electron-rich and electron-deficient thiophene-based comonomers. Calculations showed that the presence of bromine atoms decreases the energy of activation (Ea) of the adjacent C-H bonds, allowing undesirable β-defects for some brominated aromatic units. Both calculations and the new ligands should lead to the rational design of monomers and methods for the preparation of defect-free conjugated polymers from DHAP.

Bithiazole: An Intriguing Electron-Deficient Building for Plastic Electronic Applications

The heterocyclic thiazole unit has been extensively used as electron-deficient building block in π-conjugated materials over the last decade. Its incorporation into organic semiconducting materials is particularly interesting due to its structural resemblance to the more commonly used thiophene building block, thus allowing the optoelectronic properties of a material to be tuned without significantly perturbing its molecular structure. Here, we discuss the structural differences between thiazole- and thiophene-based organic semiconductors, and the effects on the physical properties of the materials. An overview of thiazole-based polymers is provided, which have emerged over the past decade for organic electronic applications and it is discussed how the incorporation of thiazole has affected the device performance of organic solar cells and organic field-effect transistors. Finally, in conclusion, an outlook is presented on how thiazole-based polymers can be incorporated into all-electron deficient polymers in order to obtain high-performance acceptor polymers for use in bulk-heterojunction solar cells and as organic field-effect transistors. Computational methods are used to discuss some newly designed acceptor building blocks that have the potential to be polymerized with a fused bithiazole moiety, hence propelling the advancement of air-stable n-type organic semiconductors.