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Li J, Zhang Y, Zhang J, Chu J, Xie L, Yu W, Zhao X, Chen C, Dong Z, Huang L, Yang L, Yu Q, Ren Z, Wang J, Xu Y, Zhang K. Chemical Vapor Deposition of Quaternary 2D BiCuSeO p-Type Semiconductor with Intrinsic Degeneracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2207796. [PMID: 36222393 DOI: 10.1002/adma.202207796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential to fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary 2D materials by chemical vapor deposition (CVD) is still a challenge due to the restriction of thermodynamics. Here, the CVD synthesis of quaternary 2D BiCuSeO nanosheets is realized. As-grown BiCuSeO nanosheets with thickness down to ≈6.1 nm (≈7 layers) and domain size of ≈277 µm show excellent ambient stability. Intrinsic p-type degeneracy of BiCuSeO, capable of maintaining even in a few layers, is comprehensively unveiled. By varying the thicknesses and temperatures, the carrier concentration of BiCuSeO nanosheets can be adjusted in the range of 1019 to 1021 cm-3 , and the Hall mobility of BiCuSeO is ≈191 cm2 V-1 s-1 (at 2 K). Furthermore, taking advantage of the p-type degeneracy of BiCuSeO, a prototypical BiCuSeO/MoS2 TFET is fabricated. The emergence of the negative differential resistance trend and multifunctional diodes by modulating the gate voltage and temperature reveal the great practical implementation potential of BiCuSeO nanosheets. These results pave way for the CVD synthesis of multinary 2D materials and rational design of high-performance tunnel devices.
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Affiliation(s)
- Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junwei Chu
- Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shaanxi, Xi'an, 710065, P. R. China
| | - Liu Xie
- Yangtze Memory Technologies Co., Ltd., Wuhan, 430074, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Guangdong, 523000, P. R. China
| | - Xinxin Zhao
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Zeqian Ren
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Junyong Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Yijun Xu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, P. R. China
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Duan J, Liu T, Zhao Y, Yang R, Zhao Y, Wang W, Liu Y, Li H, Li Y, Zhai T. Active and conductive layer stacked superlattices for highly selective CO 2 electroreduction. Nat Commun 2022; 13:2039. [PMID: 35440660 PMCID: PMC9018841 DOI: 10.1038/s41467-022-29699-2] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Accepted: 03/22/2022] [Indexed: 11/12/2022] Open
Abstract
Metal oxides are archetypal CO2 reduction reaction electrocatalysts, yet inevitable self-reduction will enhance competitive hydrogen evolution and lower the CO2 electroreduction selectivity. Herein, we propose a tangible superlattice model of alternating metal oxides and selenide sublayers in which electrons are rapidly exported through the conductive metal selenide layer to protect the active oxide layer from self-reduction. Taking BiCuSeO superlattices as a proof-of-concept, a comprehensive characterization reveals that the active [Bi2O2]2+ sublayers retain oxidation states rather than their self-reduced Bi metal during CO2 electroreduction because of the rapid electron transfer through the conductive [Cu2Se2]2- sublayer. Theoretical calculations uncover the high activity over [Bi2O2]2+ sublayers due to the overlaps between the Bi p orbitals and O p orbitals in the OCHO* intermediate, thus achieving over 90% formate selectivity in a wide potential range from −0.4 to −1.1 V. This work broadens the studying and improving of the CO2 electroreduction properties of metal oxide systems. It is important yet challenging to improve the interface contact between commonly used carbon conductive layer and metal oxide catalysts. Here the authors propose BiCuSeO with alternant active [Bi2O2]2+ sublayers and conductive [Cu2Se2]2- sublayer within its superlattice as efficient catalyst for CO2 electroreduction to formate.
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Affiliation(s)
- Junyuan Duan
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Tianyang Liu
- Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, 210023, Nanjing, Jiangsu, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Ruoou Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Yang Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Wenbin Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Youwen Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China.
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China
| | - Yafei Li
- Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, 210023, Nanjing, Jiangsu, P. R. China.
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, P. R. China.
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Dutta M, Sarkar D, Biswas K. Intrinsically ultralow thermal conductive inorganic solids for high thermoelectric performance. Chem Commun (Camb) 2021; 57:4751-4767. [PMID: 33884387 DOI: 10.1039/d1cc00830g] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Thermoelectric materials which can convert heat energy to electricity rely on crystalline inorganic solid state compounds exhibiting low phonon transport (i.e. low thermal conductivity) without much inhibiting the electrical transport. Suppression of phonons traditionally has been carried out via extrinsic pathways, involving formation of point defects, foreign nanostructures, and meso-scale grains, but the incorporation of extrinsic substituents also influences the electrical properties. Crystalline materials with intrinsically low lattice thermal conductivity (κlat) provide an attractive paradigm as it helps in simplifying the complex interrelated thermoelectric parameters and allows us to focus largely on improving the electronic properties. In this feature article, we have discussed the chemical bonding and structural aspects in determining phonon transport through a crystalline material. We have outlined how the inherent material properties like lone pair, bonding anharmonicity, presence of intrinsic rattlers, ferroelectric instability, weak and rigid substructures, etc. influence in effectively suppressing the heat transport. The strategies summarized in this feature article should serve as a general guide to rationally design and predict materials with low κlat for potential thermoelectric applications.
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Affiliation(s)
- Moinak Dutta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Debattam Sarkar
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India. and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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Di C, Pan JH, Dong ST, Lv YY, Yan XJ, Zhou J, Yao SH, Lu H, Gusev VE, Chen YF, Lu MH. Ultralow cross-plane lattice thermal conductivity caused by Bi–O/Bi–O interfaces in natural superlattice-like single crystals. CrystEngComm 2019. [DOI: 10.1039/c9ce01139k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Revealing the impact of Bi–O/Bi–O interfaces with van der Waals interactions on the formation of ultralow cross-plane lattice thermal conductivity.
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Abstract
Abstract
Two-dimensional (2D) materials have been widely investigated for the last few years, introducing nanosheets and ultrathin films. The often superior electrical, optical and mechanical properties in contrast to their three-dimensional (3D) bulk counterparts offer a promising field of opportunities. Especially new research fields for already existing and novel applications are opened by downsizing and improving the materials at the same time. Some of the most promising application fields are namely supercapacitors, electrochromic devices, (bio-) chemical sensors, photovoltaic devices, thermoelectrics, (photo-) catalysts and membranes. The role of oxides in this field of materials deserves a closer look due to their availability, durability and further advantages. Here, recent progress in oxidic nanosheets is highlighted and the benefit of 2D oxides for applications discussed in-depth. Therefore, different synthesis techniques and microstructures are compared more closely.
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Affiliation(s)
- Richard Hinterding
- Leibniz University Hannover , Institute of Physical Chemistry and Electrochemistry , Callinstraße 3A , D-30176 Hannover , Germany
| | - Armin Feldhoff
- Leibniz University Hannover , Institute of Physical Chemistry and Electrochemistry , Callinstraße 3A , D-30176 Hannover , Germany
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Zhang X, Chang C, Zhou Y, Zhao LD. BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective. MATERIALS 2017; 10:ma10020198. [PMID: 28772557 PMCID: PMC5459214 DOI: 10.3390/ma10020198] [Citation(s) in RCA: 67] [Impact Index Per Article: 9.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2016] [Revised: 02/07/2017] [Accepted: 02/14/2017] [Indexed: 11/16/2022]
Abstract
A BiCuSeO system has been reported as a promising thermoelectric material and has attracted great attention in the thermoelectric community since 2010. Recently, several remarkable studies have been reported and the ZT of BiCuSeO was pushed to a higher level. It motivates us to systematically summarize the recent reports on the BiCuSeO system. In this short review, we start with several attempts to optimize thermoelectric properties of BiCuSeO. Then, we introduce several opinions to explore the origins of low thermal conductivity for BiCuSeO. Several approaches to enhance thermoelectric performance are also summarized, including modulation doping, introducing dual-vacancies, and dual-doping, etc. At last, we propose some possible strategies for enhancing thermoelectric performance of BiCuSeO in future research.
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Affiliation(s)
- Xiaoxuan Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Cheng Chang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Yiming Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
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