Research Advances of Porous Polyimide-Based Composites with Low Dielectric Constant

With the burgeoning of the microelectronics industry, in order to improve the transmission speed between chips in large-scale integrated circuits to meet the demands of high integration, it is necessary for interlayer insulation materials to possess a lower dielectric constant (k). Polyimide (PI) has been widely used as interlayer insulation materials for large-scale integrated circuits, and the exploration on reducing their dielectric constant has attracted extensive attention in recent years. In this work, porous PI-based composites with a low dielectric constant are mainly reviewed. The application of porous SiO2, graphene derivatives, polyoxometalates, polyhedral oligomeric silsesquioxane and hyperbranched polysiloxane in reducing the dielectric constant of PI is emphatically introduced. The key technical problems and challenges in the current research of porous polyimide materials are summarized, and the development prospect of low k polyimide is also expounded.

Reducing the Permittivity of Polyimides for Better Use in Communication Devices

Recent studies have shown that introducing fluorinated groups into polyimide (PI) molecules can effectively reduce the dielectric constant (Dk) and dielectric loss (Df) of PIs. In this paper, 2,2'-bis[4-(4-aminophenoxy) phenyl]-1,1',1',1',3,3',3'-hexafluoropropane (HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobenzene (TFMB), diaminobenzene ether (ODA), 1,2,4,5-Benzenetetracarboxylic anhydride (PMDA), 3,3',4,4'-diphenyltetracarboxylic anhydride (s-BPDA) and 3,3',4,4'-diphenylketontetracarboxylic anhydride (BTDA) were selected for mixed polymerization to find the relationship between the structure of PIs and dielectric properties. Firstly, different structures of fluorinated PIs were determined, and were put into simulation calculation to learn how structure factors such as fluorine content, the position of fluorine atom and the molecular structure of diamine monomer affect the dielectric properties. Secondly, experiments were carried out to characterize the properties of PI films. The observed change trends of performance were found to be consistent with the simulation results, and the possible basis of the interpretation of other performance was made from the molecular structure. Finally, the formulas with the best comprehensive performance were obtained respectively. Among them, the best dielectric properties were 14.3%TFMB/85.7%ODA//PMDA with dielectric constant of 2.12 and dielectric loss of 0.00698.