3-Methoxythiophene-Based Indophenine Reaction Generating an Isomeric Dynamic Equilibrium System

A 3-methoxythiophene-based indophenine reaction with N-(2-hexyldecyl)isatin in the presence of concentrated sulfuric acid produces an indophenine cis-trans isomeric dynamic equilibrium system, which is dominated by the (Z,E,Z) configuration with a trace of the (Z,Z,Z) configuration.

Recent Research Progress in Indophenine-Based-Functional Materials: Design, Synthesis, and Optoelectronic Applications

This review highlights selected examples, published in the last three to four years, of recent advance in the design, synthesis, properties, and device performance of quinoidal π-conjugated materials. A particular emphasis is placed on emerging materials, such as indophenine dyes that have the potential to enable high-performance devices. We specifically discuss the recent advances and design guidelines of π-conjugated quinoidal molecules from a chemical standpoint. To the best of the authors' knowledge, this review is the first compilation of literature on indophenine-based semiconducting materials covering their scope, limitations, and applications. In the first section, we briefly introduce some of the organic electronic devices that are the basic building blocks for certain applications involving organic semiconductors (OSCs). We introduce the definition of key performance parameters of three organic devices: organic field effect transistors (OFET), organic photovoltaics (OPV), and organic thermoelectric generators (TE). In section two, we review recent progress towards the synthesis of quinoidal semiconducting materials. Our focus will be on indophenine family that has never been reviewed. We discuss the relationship between structural properties and energy levels in this family of molecules. The last section reports the effect of structural modifications on the performance of devices: OFET, OPV and TE. In this review, we provide a general insight into the association between the molecular structure and electronic properties in quinoidal materials, encompassing both small molecules and polymers. We also believe that this review offers benefits to the organic electronics and photovoltaic communities, by shedding light on current trends in the synthesis and progression of promising novel building blocks. This can provide guidance for synthesizing new generations of quinoidal or diradical materials with tunable optoelectronic properties and more outstanding charge carrier mobility.

Isomerically Pure Oxindole-Terminated Quinoids for n-Type Organic Thin-Film Transistors Enabled by the Chlorination of Quinoidal Core

Quinoidal compounds have great potential utility as high-performance organic semiconducting materials because of their rigid planar structures and extended π-conjugation. However, the existence of E and Z isomers adversely affects the charge-transport properties of quinoidal compounds. In this study, three isomerically pure oxindole-terminated quinoids were developed by introducing chlorine atoms in the quinoidal core. The synthesized quinoids were confirmed to have a Z,Z configuration by means of ¹ H NMR spectroscopy, density functional theory calculations, and single-crystal X-ray analysis. Importantly, the strategy of chlorination allowed to maintain low-lying frontier molecular orbital energy levels and ensure favorable intermolecular packing. Consequently, all three quinoidal compounds showed n-type transport characteristics in organic thin-film transistors, with electron mobilities up to 0.35 cm²  V^-1  s^-1 , which is the highest value reported to date for oxindole-terminated quinoids. Our study can provide new guidelines for the design of isomerically pure quinoids with high electron mobilities.

Alkylated Benzodithienoquinolizinium Salts as Possible Non-Fullerene Organic N-Type Semiconductors: An Experimental and Theoretical Study

Three photobicyclized benzodithienoquinolizinium tetrafluoroborates (BPDTQBF4) were prepared and evaluated by UV-Vis and fluorescence spectral, electrochemical analysis, and by theoretical calculations as possible organic n-type semiconductors. Evaluation and comparison of their LUMO levels, HOMO-LUMO energy gaps as monomeric and π-stacked dimers with those of other materials, suggest their potential as organic n-type semiconductors. Calculations of their relative charge carrier mobilities confirmed this potential for one derivative with a long (C-14) alkyl chain appended to the polycyclic planar π-system.

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO₃) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO₃ nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO₃ contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO₃/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO₃ nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO₃ nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm^-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10^-1 cm² V^-1 s^-1, and on/off current of 8.4 × 10⁷.