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Komal N, Mansoor MA, Mazhar M, Sohail M, Malik Z, Anis-ur-Rehman M. Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb 2Te 3 Microstructures. ACS OMEGA 2023; 8:9797-9806. [PMID: 36969434 PMCID: PMC10034840 DOI: 10.1021/acsomega.2c05859] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Accepted: 12/09/2022] [Indexed: 06/18/2023]
Abstract
Doped Sb2Te3 narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped Sb2Te3 microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped Sb2Te3 and doping of Sm and In within the crystal lattice of Sb2Te3. Further, the morphology, structure elucidation, and stability have been investigated systematically by scanning electron microscopy (SEM), Raman analysis, and thermogravimetric analysis (TGA). These analyses verified the successful synthesis of hexagonal undoped Sb2Te3 (AT) and (Sm, In)-doped Sb2Te3 (SAT, IAT) microstructures. Moreover, the comparison of dielectric parameters, including dielectric constant, dielectric loss, and tan loss of AT, SAT, and IAT, was done in detail. An increment in the electrical conductivities, both AC and DC, from 1.92 × 10-4 to 4.9 × 10-3 Ω-1 m-1 and a decrease in thermal conductivity (0.68-0.60 W m-1 K-1) were observed due to the doping by trivalent (Sm, In) dopants. According to our best knowledge, the synthesis and dielectric properties of (Sm, In)-doped and undoped Sb2Te3 in comparison with their electrical properties and thermal conductivity have not been reported earlier. This implies that appropriate doping with (Sm, In) in Sb2Te3 is promising to enhance the electronic and thermoelectric behavior.
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Affiliation(s)
- Nitasha Komal
- Department
of Chemistry, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12, Islamabad44000, Pakistan
| | - Muhammad Adil Mansoor
- Department
of Chemistry, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12, Islamabad44000, Pakistan
| | - Muhammad Mazhar
- Department
of Chemistry, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12, Islamabad44000, Pakistan
| | - Manzar Sohail
- Department
of Chemistry, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12, Islamabad44000, Pakistan
| | - Zahida Malik
- Department
of Chemistry, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12, Islamabad44000, Pakistan
| | - Muhammad Anis-ur-Rehman
- Applied
Thermal Physics Laboratory, Department of Physics, COMSATS University Islamabad, Islamabad44000, Pakistan
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Sarkar D, Mottakin M, Mahmud Hasan A, Selvanathan V, Sobayel K, Khan M, Masum Rabbani A, Shahinuzzaman M, Aminuzzaman M, Anuar FH, Suemasu T, Sopian K, Akhtaruzzaman M. A Comprehensive Study on RbGeI3 based Inorganic Perovskite Solar Cell using Green Synthesized CuCrO2 as Hole Conductor. J Photochem Photobiol A Chem 2023. [DOI: 10.1016/j.jphotochem.2023.114623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2023]
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Haq I, Shakoor A, Al-Harbi F, Mufti H, Sharafat Hussain M, Ikram S, Yasir Ali M, Mahmood K, Ali A, Amin N, Javaid K, Ilyas S. Linkage of thermoelectric properties with the structural parameters in Zinc Indium Oxide (ZnInO) thin films grown by physical vapor deposition (PVD). INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2023.110438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
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Abstract
While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.
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Tong B, Deng Z, Xu B, Meng G, Shao J, Liu H, Dai T, Shan X, Dong W, Wang S, Zhou S, Tao R, Fang X. Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO 2 Gas Sensors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:34727-34734. [PMID: 30207676 DOI: 10.1021/acsami.8b10485] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
p-type ternary oxides can be extensively explored as alternative sensing channels to binary oxides with diverse structural and compositional versatilities. Seeking a novel approach to magnify their sensitivities toward gas molecules, e.g., volatile organic compounds (VOCs), will definitely expand their applications in the frontier area of healthcare and air-quality monitoring. In this work, delafossite CuCrO2 (CCO) nanoparticles with different grain sizes have been utilized as p-type ternary oxide sensors. It was found that singly ionized oxygen vacancies (Vo•) defects, compared with the grain size of CCO nanoparticles, play an important role in enhancing the charge exchange at the VOCs molecules/CCO interface. In addition to suppressing the hole concentration of the sensor channel, the unpaired electron trapped in Vo• provides an active site for chemisorptions of environmental oxygen and VOCs molecules. The synergetic effect is responsible for the observed increase of sensitivity. Furthermore, the sensitive (Vo• defect-rich) CCO sensor exhibits good reproducibility and stability under a moderate operation temperature (<325 °C). Our work highlights that Vo• defects, created via either in situ synthesis or postannealing treatment, could be explored to rationally boost the performance of p-type ternary oxide sensors.
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Affiliation(s)
- Bin Tong
- University of Science and Technology of China , Hefei 230026 , China
| | | | - Bo Xu
- China Pharmaceutical University , Nanjing 211198 , China
| | | | | | - Hongyu Liu
- University of Science and Technology of China , Hefei 230026 , China
| | - Tiantian Dai
- University of Science and Technology of China , Hefei 230026 , China
| | - Xueyan Shan
- University of Science and Technology of China , Hefei 230026 , China
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Tuning the electrical properties of the p-type transparent conducting oxide Cu 1-xCr 1+xO 2 by controlled annealing. Sci Rep 2018; 8:7216. [PMID: 29740118 PMCID: PMC5940695 DOI: 10.1038/s41598-018-25659-3] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2018] [Accepted: 04/18/2018] [Indexed: 11/27/2022] Open
Abstract
Off-stoichiometric copper chromium oxide delafossite received lately a great interest due to its high p-type electrical conductivity and adequate optical transmittance in the visible range. However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic devices, the electronic properties must be efficiently tailored. Here, post-deposition thermal treatment is proven as an adequate approach for finely controlling the electrical properties of this former degenerate semiconducting material. The energetics of the annealing process are investigated using two different approaches, as a function of the annealing temperature and as a function of the annealing time, allowing the accurate determination of the activation energy of the annealing of defects. By using this method, the electrical carrier concentration was varied in the 1021 – 1017 cm−3 range while the recorded changes in the drift mobility covered three orders of magnitude. Moreover, we demonstrate the ability to accurately manipulate the Fermi level of such materials, which is of great importance in controlling the carrier injection and extraction in optoelectronic active layers.
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Sinnarasa I, Thimont Y, Presmanes L, Barnabé A, Tailhades P. Thermoelectric and Transport Properties of Delafossite CuCrO₂:Mg Thin Films Prepared by RF Magnetron Sputtering. NANOMATERIALS 2017; 7:nano7070157. [PMID: 28654011 PMCID: PMC5535223 DOI: 10.3390/nano7070157] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2017] [Revised: 06/20/2017] [Accepted: 06/21/2017] [Indexed: 01/19/2023]
Abstract
P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed.
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Affiliation(s)
- Inthuga Sinnarasa
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Yohann Thimont
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Lionel Presmanes
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Antoine Barnabé
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Philippe Tailhades
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, F-31062 Toulouse CEDEX 9, France.
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