The metal atomic substitution induced half-metallic properties, metallic properties and semiconducting properties in X-N4 nanoribbons

Armchair X-N4 nanoribbons (X-AN4NRs) and zigzag X-N4 nanoribbons (X-ZN4NRs) were calculated using first-principles calculations. Ferromagnets (FM) were found to be the most stable among the initial magnetic structures. Furthermore, nanoribbons were found to be thermodynamically stable through molecular dynamics simulations. It can be found that when the temperature and total energy of X-AN4NRs and X-ZN4NRs change with time, they have a small oscillation range, which confirms the dynamic stability of X-AN4NRs and X-ZN4NRs under realistic experimental conditions. Subsequently, the magnetic moment analysis of the X-AN4NRs and X-ZN4NRs revealed that the magnetic moment of the X-AN4NRs is significantly smaller than that of X-ZN4NRs. The band structure and density of states (DOS) of the X-AN4NRs and X-ZN4NRs were also computed, which indicate different properties for different transition metal nanoribbons. The results suggest that different edge structures and transition metals can influence the electronic structure of the nanoribbons. Moreover, based on the band structure and DOS, it was found that Mn-AN4NRs and Fe-ZN4NRs exhibit half-metallic properties. They can generate 100% polarized currents at the Fermi level, providing valuable information for developing spintronic devices. Our study has a positive value for regulating the properties of the nanoribbons by metal atom substitution.

Tailored modifications of the electronic properties of g-C3N4/C2N-h2D nanoribbons by first-principles calculations

The electronic structure of g-C₃N₄/C₂N-h2D nanoribbons was investigated by first-principles calculations. As a splice structure, we first computed the three magnetic coupled states of g-C₃N₄/C₂N-h2D nanoribbons. After self-consistent calculations, both the antiferromagnetic and paramagnetic coupling states become ferromagnetic coupling states. It was proved that the ferromagnetic coupling state is the most stable state. Thermodynamic stability was subsequently verified based on the ferromagnetic coupling state. It had a steady electron spin polarization, with a magnetic moment of 1 μ_B for each primitive cell. It changed from a direct band-gap semiconductor to an indirect band-gap semiconductor and exhibited the properties of a narrow band gap semiconductor through the analysis of the energy band and charge density. To transform the electronic structure, we adsorbed different transition metals in g-C₃N₄/C₂N-h2D nanoribbons. We investigated the electronic structure of g-C₃N₄/C₂N-h2D nanoribbons adsorbed by different transition metals. It was shown that the electronic structure of g-C₃N₄/C₂N-h2D nanoribbons could be regulated by the adsorption of different transition metal atoms. Moreover, the adsorption of Fe and Ni can generate a 100% polarized current in the Fermi surface, which will provide more application potential for spintronics devices.

Adsorption mechanisms of different toxic molecular gases on intrinsic C2N and Ti-C2N-V monolayer: a DFT study

Recently, the excessive emission of chemical toxic gases such as nitrogen trifluoride (NF₃), ammonia (NH₃), phosgene (COCL₂), and benzene (C₆H₆) has caused serious environmental problems. Adsorption of these chemical toxic gas molecules is a promising method to reduce environmental pollution. In this work, density functional theory (DFT) calculations are used to investigate the adsorption properties of these chemical toxic molecules on intrinsic C₂N and Ti-C₂N_-V monolayer. The results show that NF₃, NH₃, C₆H₆, and COCL₂ can all be adsorbed to the intrinsic C₂N monolayer with weak adsorption energy, while the adsorption properties of these gas molecules were greatly improved after doping Ti atom. The adsorption energy of NH₃, C₆H₆, COCL₂, and NF₃ increased from - 0.585, - 0.432, - 0.633, and - 0.362 eV to - 2.214, - 1.699, - 1.822, and - 0.799 eV, respectively, which increased by 2 ~ 4 times compared with that before doping. Besides, the results of the electron distribution, work function, the total density of states (TDOS), and the partial density of states (PDOS) analysis indicate that the doped Ti atom can be used as a bridge to connect the adsorbed molecules with the C₂N_-V monolayer, strengthen their interaction, and significantly improve the adsorption capacity. Therefore, Ti-doped C₂N_-V (Ti-C₂N_-V) monolayer is a promising adsorbent for the enrichment and utilization of harmful gases.

Pressure-induced structure, elasticity, intrinsic hardness and ideal strength of tetragonal C4N

A tetragonal C₄N (t-C₄N) structure was predicted via CALYPSO code, and the effects of pressure on its structural and mechanical properties were studied. The results show that t-C₄N is different from various 2D C_xN_y compounds with a new type 3D crystal structure, which is similar to diamond. Bulk t-C₄N is equipped with excellent elastic properties. When the pressure is increased from 0 GPa to 350 GPa, its bulk modulus B, shear modulus G and Young's modulus E are increased from 426.9 GPa to 1123.1 GPa, 371.4 GPa to 582.9 GPa and 863.7 GPa to 1490.9 GPa, respectively. The anisotropic B_max, G_max and E_max are increased from 582.38 GPa to 1751.41 GPa, 478.29 GPa to 1033.97 GPa and 1281.26 GPa to 2490.14 GPa, respectively. When the pressure is 0 GPa, the hardness calculated by Chen's and Tian's models are 51.15 GPa and 51.81 GPa, respectively. Its ideal tensile strength in [111] orientation is the smallest (63.46 GPa), which indicates that the (111) planes allow easy cleavage. The smallest ideal shear strength (67.98 GPa) can be obtained in the (111)[11̄0] orientation, which suggests its theoretical hardness is about 67.98 GPa. Due to its excellent mechanical properties, t-C₄N can be used as an industrial superhard material.

Electronic, optical and thermoelectric properties of boron-doped nitrogenated holey graphene

We employ first principles calculations to investigate the electronic, optical, and thermoelectric properties of ten boron-doped nitrogenated holey graphene (NHG) monolayers. We find that most of the proposed structures remain stable during ab initio molecular dynamics simulations, in spite of their increased formation energies. Density functional theory calculations employing a hybrid functional predict band gaps ranging from 0.73 eV to 2.30 eV. In general, we find that boron doping shifts optical absorption towards the visible spectrum, and also reduces light reflection in this region. On the other hand, the magnitude of optical absorption coefficients are reduced. Regarding the thermoelectric properties, we predict that boron doping can enhance the figure of merit ZT of NHG by up to 55%. Our results indicate that boron-doped NHG monolayers may find application in solar cells and thermoelectric devices.

The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping

The magnetism of hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers is systematically studied by using first principles density functional calculations. The pristine 1T-MX₂ monolayers are semiconductors with nonmagnetic ground states, which can be transformed to ferromagnetic states by the approach of hole doping. For the unstrained monolayers, the spontaneous magnetization appears once above the critical hole density (10¹⁴ cm⁻²), where the p orbital of S or Se atoms contributes the most of the magnetic moment. As the tensile strains exceed 4%, the magnetic moments per hole of ZrS₂ and HfS₂ monolayers increase sharply to a saturated value with increasing hole density, implying obvious advantages over the unstrained monolayers. The phonon dispersion calculations for the strained ZrS₂ and HfS₂ monolayers indicate that they can keep the dynamical stability by hole doping. Furthermore, we propose that the fluorine atom modified ZrS₂ monolayer could obtain stable ferromagnetism. The magnetism in hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers has great potential for developing spintronic devices with desirable applications.

The magnetism of zirconium and hafnium dichalcogenides by hole doping is studied by using first principles calculations.

Tunable electronic and magnetic properties of graphene-like XYBe3 (XY = BN, AlN, SiC, GeC) nanosheets with carrier doping: a first-principles study

Graphyne-like ternary beryllide nanosheets are found to be promising host materials because of their carrier-induced tunable magnetism and half-metallicity.

Strain tunable magnetism in SnX2 (X = S, Se) monolayers by hole doping

By first-principles calculations, the magnetism of hole doped tin dichalcogenides SnX₂ (X = S, Se) monolayers is systematically studied. It is found that a phase transition from nonmagnetic to ferromagnetic ground state appears once above the critical hole density (~10¹⁴ cm⁻²). The spin magnetic moment can maintain a magnitude of 1.0 μ_B/hole with excellent stability of ferromagnetic state. Furthermore, we demonstrate that strain is very useful to modulate the DOS near the valence band, resulting in the reduction of the critical hole density to ~10¹³ cm⁻² when the strain reaches 4% (6%) in SnS₂ (SnSe₂), which can be realized in common field effect transistors. Moreover, the phonon dispersion calculations for the strained SnX₂ monolayers indicate that they can keep the dynamical stability under the hole doping. Therefore, the strain tunable magnetic transition in hole doped tin dichalcogenides indicates their potential promising applications in spintronic devices.

Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding

Based on first-principles calculations, the electronic structures and magnetism are investigated in 3d transition metal (TM)-embedded porous two-dimensional (2D) C₂N monolayers.