Chen WJ, Yuan S, Ma L, Ji Y, Wang B, Zheng Y. Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices.
RSC Adv 2018. [DOI:
10.1039/c7ra12233k]
[Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Combining thermodynamic calculation and phase-field simulation, we revealed that mechanical switching of polarization can be achieved in ferroelectric by shear stressviaa simple mechanism where the presence of flexoelectricity is not necessary.
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