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Raval JB, Chaki SH, Patel SR, Giri RK, Solanki MB, Deshpande MP. Direct vapour transport grown Cu 2SnS 3 crystals: exploring structural, elastic, optical, and electronic properties. RSC Adv 2024; 14:28401-28414. [PMID: 39239288 PMCID: PMC11376234 DOI: 10.1039/d4ra04344h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2024] [Accepted: 08/07/2024] [Indexed: 09/07/2024] Open
Abstract
Copper tin sulphide (Cu2SnS3) (CTS) has emerged as a potent material for applications in photovoltaic, thermoelectric, electrochemical, biological, and other fields. CTS has superior properties such as non-toxicity, direct bandgap, p-type conductivity, variable crystal structure, alterable morphology and ease of synthesis, and it is a better substitute for conventional semiconductor materials. In the present work, CTS crystals were grown using direct vapour transport. Investigation through X-ray diffraction showed that the as-grown CTS crystals possessed a cubic unit cell structure with a = b = c = 5.403 Å. The analysis of the binding energies and composition of constituents of the as-grown CTS crystals via X-ray photoelectron spectroscopy confirmed the presence of Cu1+, Sn4+ and S2-. The experimental bandgap of CTS crystals is 1.23 eV, which was confirmed by diffuse reflectance spectroscopy. The investigation of elastic, optical, thermal and electronic properties of CTS crystals was carried out via density functional theory employing generalized gradient approximation with the Perdew-Burke-Ernzerhof exchange-relationship functional. The first-ever analysis of the temperature-dependent elastic properties of CTS crystals revealed greater stability at elevated temperature (953 K). Dielectric properties, reflectivity, refractive index, loss function, extinction and absorption coefficients of CTS crystals were computed and analyzed in detail. The evaluation of the electronic band structure with density of states revealed valence band maximum and conduction band energy level contributions, showing a bandgap of 1.2 eV. The obtained results are discussed in detail.
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Affiliation(s)
- Jolly B Raval
- P. G. Department of Physics, Sardar Patel University Vallabh Vidyanagar 388120 Gujarat India
| | - Sunil H Chaki
- P. G. Department of Physics, Sardar Patel University Vallabh Vidyanagar 388120 Gujarat India
| | - Sefali R Patel
- P. G. Department of Physics, Sardar Patel University Vallabh Vidyanagar 388120 Gujarat India
| | - Ranjan Kr Giri
- P. G. Department of Physics, Sardar Patel University Vallabh Vidyanagar 388120 Gujarat India
| | - Mitesh B Solanki
- Parul Institute of Technology, Parul University Waghodia Vadodara 391760 Gujarat India
| | - Milind P Deshpande
- P. G. Department of Physics, Sardar Patel University Vallabh Vidyanagar 388120 Gujarat India
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2
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Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes. J Colloid Interface Sci 2021; 602:307-315. [PMID: 34130177 DOI: 10.1016/j.jcis.2021.05.110] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 04/26/2021] [Accepted: 05/19/2021] [Indexed: 11/21/2022]
Abstract
With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the Vdefect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.
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Qu S, Yuan X, Li Y, Li X, Zhou X, Xue X, Zhang K, Xu J, Yuan C. Aqueous synthesis of composition-tuned defects in CuInSe 2 nanocrystals for enhanced visible-light photocatalytic H 2 evolution. NANOSCALE ADVANCES 2021; 3:2334-2342. [PMID: 36133756 PMCID: PMC9418301 DOI: 10.1039/d1na00069a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Accepted: 02/23/2021] [Indexed: 05/03/2023]
Abstract
The composition and defect tolerance of CuInSe2 (CISe) quantum dots (QDs) provide a scaffold to design defects via tailoring the elemental ratio or distributions for boosting photocatalytic H2 evolution (PHE). Herein, a ligand-assisted two-step aqueous method was developed to prepare defect CISe quantum dots for the first time. UV-vis, XPS, HRTEM, and HADDF investigations confirmed the typical double-absorption edges of copper vacancy defects and indium substituted at copper site defects in the structure constructed through initial synthesis tuned by Cu/In ratio and the ensued coarsening. The steady-transient PL suggested that the D-A recombination with prolonged PL lifetime dominated the emission of composition-optimized CuInSe2 with the Cu/In ratio of 1/4 (CISe-1/4). Further transient photocurrent and electrochemical impedance spectroscopy investigations demonstrated that surface defects in the structure favor the carriers' separation/transportation. The CISe-1/4 exhibited a superior PHE rate of 722 μmol g-1 h-1, about 23 times higher than that of the initially synthesized CISe-1/4 nucleus (31 μmol g-1 h-1), with a maximum apparent quantum efficiency (AQE) of 1.3%. The analysis of energy levels and the coulombic interaction energy of electron-hole (J e/h) based on Raman, extending UV-vis spectra investigations suggested that surface defects resulted in decreased J e/h of CISe-1/4, favoring the enhanced PHE of this structure. This work is expected to provide a reference for designing effective non-noble metal I-III-VI photocatalysts.
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Affiliation(s)
- Senlin Qu
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Xin Yuan
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Yu Li
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Xingyang Li
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Xiujuan Zhou
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Xiaogang Xue
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou Fujian 350002 P. R. China
| | - Kexiang Zhang
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Juan Xu
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
| | - Changlai Yuan
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology Guilin 541004 People's Republic of China +86-773-2290810 +86-773-2290810
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Kshirsagar AS, More PV, Dey A, Khanna PK. Ternary metal selenide/MWCNT/PANI: potential n-type nanohybrids for room-temperature thermoelectric applications. Dalton Trans 2019; 48:14497-14504. [PMID: 31531478 DOI: 10.1039/c9dt02225b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Lead-free novel n-type ternary nanohybrids were fabricated by blending separately synthesized, diamond like I-III-VI2 and I-V-VI2 (I-Cu, Ag, III-In, V-Sb, VI-Se) nanocrystals (NCs) in a multi-walled carbon nanotube (MWCNT) and polyaniline (PANI) matrix. A thermoelectric study of these nanohybrids was performed at room temperature in order to understand their utility as potential thermoelectric materials for advanced applications. Electrical conductivity, thermal conductivity and Seebeck coefficient were measured and the thermoelectric performance was evaluated at room temperature. All ternary nanohybrids revealed an n-type behavior with relatively higher electrical conductivity in the order of 103 S m-1. Among the CuInSe2 (CIS), AgInSe2 (AIS) and CuSbSe2 (CSS)-based hybrids, chalcostilbite (i.e., CSS/MWCNT/PANI) showed a good performance at room temperature with a power factor of 1.16 μW m-1 K-2 and Seebeck coefficient of -23.5 μV K-1. A possible mechanism of the charge transport for the ternary hybrid was also discussed. The present article highlights the potentiality of different lead-free ternary metal selenide NPs in hybrid forms for thermoelectric applications.
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Affiliation(s)
- Anuraj S Kshirsagar
- Nano Chemistry and Quantum Dots R & D Lab, Department of Applied Chemistry, Defence Institute of Advanced Technology (DIAT), Girinagar, Pune-411025, India.
| | - Priyesh V More
- Nano Chemistry and Quantum Dots R & D Lab, Department of Applied Chemistry, Defence Institute of Advanced Technology (DIAT), Girinagar, Pune-411025, India.
| | - Abhijit Dey
- Energetic Materials Research Division, High Energy Materials Research Laboratory, (Defence Research & Development Organization), Pune-411 021, India
| | - Pawan K Khanna
- Nano Chemistry and Quantum Dots R & D Lab, Department of Applied Chemistry, Defence Institute of Advanced Technology (DIAT), Girinagar, Pune-411025, India.
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Latha M, Aruna-Devi R, Velumani S, Murali B, Santoyo-Salazar J, de Moure-Flores F. Solution based synthesis of Cu(In,Ga)Se2 microcrystals and thin films. RSC Adv 2019; 9:35197-35208. [PMID: 35530668 PMCID: PMC9074129 DOI: 10.1039/c9ra07750b] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2019] [Accepted: 10/21/2019] [Indexed: 01/09/2023] Open
Abstract
Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se2 microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method. The most important parameters such as reaction temperature and time were varied to study their influences on the structural, morphological, compositional and optical properties of the MCs. Based on the results, the formation of CIGSe was initiated from binary β-CuSe and then converted into pure phase CIGSe by gradual incorporation of In3+ and Ga3+ ions into the β-CuSe crystal lattice. As the reaction time increases, the band gap energy was increased from 1.10 to 1.28 eV, whereas the size of the crystals increased from 0.9 to 3.1 μm. Besides, large-scale synthesis of CIGSe MCs exhibited a high reaction yield of 90%. Furthermore, the CIGSe MCs dispersed in the ethanol was coated as thin films by a drop casting method, which showed the optimum carrier concentration, high mobility and low resistivity. Moreover, the photoconductivity of the CIGSe MC thin film was enhanced by three order magnitude in comparison with CIGSe NC thin films. The solar cells fabricated with CIGSe MCs showed the PCE of 0.59% which is 14.75 times higher than CIGSe NCs. These preliminary results confirmed the potential of CIGSe MCs as an active absorber layer in low-cost thin film solar cells. Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se2 microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method.![]()
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Affiliation(s)
- M. Latha
- Facultad de Química
- Materiales-Energía
- Universidad Autónomade Querétaro (UAQ)
- Santiago de Querétaro
- Mexico
| | - R. Aruna-Devi
- Facultad de Química
- Materiales-Energía
- Universidad Autónomade Querétaro (UAQ)
- Santiago de Querétaro
- Mexico
| | - S. Velumani
- Departamento de Ingeniería Eléctrica
- C.P. 07360 Ciudad de México
- Mexico
| | - B. Murali
- Solar Cells and Photonics Research Laboratory
- School of Chemistry
- University of Hyderabad
- India
| | | | - F. de Moure-Flores
- Facultad de Química
- Materiales-Energía
- Universidad Autónomade Querétaro (UAQ)
- Santiago de Querétaro
- Mexico
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Karmakar G, Tyagi A, Wadawale A, Kedarnath G, Srivastava A, Betty C, Singh V. Synthesis, Characterization and Photo Response Behaviour of InSe and CuInSe2
Nanostructures Using Tris(5-methyl-2-pyridylselenolato)indium(III) as Molecular Precursor. ChemistrySelect 2018. [DOI: 10.1002/slct.201801653] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Affiliation(s)
- Gourab Karmakar
- Chemistry Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India
| | - Adish Tyagi
- Chemistry Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India
- Homi Bhabha National Institute, Anushaktinagar; Mumbai- 400 094 India
| | - Amey Wadawale
- Chemistry Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India
| | - Gotluru Kedarnath
- Chemistry Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India
- Homi Bhabha National Institute, Anushaktinagar; Mumbai- 400 094 India
| | - Amit P. Srivastava
- Mechanical Metallurgy Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India)
| | | | - Vishal Singh
- Materials Science Division; Bhabha Atomic Research Centre; Mumbai- 400 085 India)
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Kshirsagar AS, Khanna PK. Reaction Tailoring for Synthesis of Phase-Pure Nanocrystals of AgInSe2
, Cu3
SbSe3
and CuSbSe2. ChemistrySelect 2018. [DOI: 10.1002/slct.201702986] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Anuraj S. Kshirsagar
- Department of Applied Chemistry; Defence Institute of Advanced Technology (DIAT); Girinagar Pune-411025, Maharashtra India
| | - Pawan. K. Khanna
- Department of Applied Chemistry; Defence Institute of Advanced Technology (DIAT); Girinagar Pune-411025, Maharashtra India
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Kshirsagar AS, Khanna PK. Titanium dioxide (TiO2)-decorated silver indium diselenide (AgInSe2): novel nano-photocatalyst for oxidative dye degradation. Inorg Chem Front 2018. [DOI: 10.1039/c8qi00560e] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Novel titanium-dioxide-decorated silver indium diselenide nano-photocatalyst for enhancement in photocatalytic dye degradation efficiency of three different dyes, namely, MB, MO, and RhB.
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Affiliation(s)
- Anuraj S. Kshirsagar
- Nano Chemistry and Quantum Dots R & D Lab
- Department of Applied Chemistry
- Defence Institute of Advanced Technology (DIAT)
- Ministry of Defence
- Govt. of India
| | - Pawan K. Khanna
- Nano Chemistry and Quantum Dots R & D Lab
- Department of Applied Chemistry
- Defence Institute of Advanced Technology (DIAT)
- Ministry of Defence
- Govt. of India
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Efficient photo-catalytic oxidative degradation of organic dyes using CuInSe2/TiO2 hybrid hetero-nanostructures. J Photochem Photobiol A Chem 2017. [DOI: 10.1016/j.jphotochem.2017.08.058] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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