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Nagarajan V, Reseeka N, Chandiramouli R. Hex-star phosphorene nanosheets as sequencing material for DNA/RNA strands - A first-principles investigation. J Mol Graph Model 2024; 132:108845. [PMID: 39142259 DOI: 10.1016/j.jmgm.2024.108845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Revised: 06/16/2024] [Accepted: 08/02/2024] [Indexed: 08/16/2024]
Abstract
In this study, we utilised hex-star phosphorene as the main detecting material to identify the nucleobases. Nucleobases, being crucial carriers of hereditary information are identified through specific hydrogen bonding and steric interactions such as adenine pairing with thymine (or) uracil and guanine pairing with cytosine. The stable hex-star phosphorene possesses negative formation energy of -5.194 eV. The hex-star phosphorene exhibits a semiconductor nature with an energy band gap of 1.658 eV, which is deployed as the adsorbing substrate for nucleobases. Based on the Mulliken charge analysis, adsorption energy, relative band gap variation, and the detection efficiency of hex-star phosphorene towards nucleobases are examined. The outcome confirms the physisorption of nucleobases on hex-star phosphorene and strongly supports that hex-star phosphorene can be used as sequencing material for DNA and RNA.
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Affiliation(s)
- V Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur -613 401, India
| | - N Reseeka
- School of Chemical & Biotechnology, SASTRA Deemed University, Tirumalaisamudram, Thanjavur -613 401, India
| | - R Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur -613 401, India.
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Wen J, Shi M, Lin P, Chen G, Zhang J. Tunable electronic and magnetic properties of defective g-ZnO monolayer doping with non-metallic elements. J Mol Model 2024; 30:214. [PMID: 38884859 DOI: 10.1007/s00894-024-06015-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Accepted: 06/09/2024] [Indexed: 06/18/2024]
Abstract
CONTEXT The electronic and magnetic properties of non-metallic (NM) elements doping defective graphene-like ZnO (g-ZnO) monolayer including O vacancy (VO) and Zn vacancy (VZn) are studied. The results show that VO-g-ZnO is a semiconductor and VZn-g-ZnO is a magnetic semiconductor. B, C, N, Si, P, 2S, and 2Si doping VO-g-ZnO systems present half-metal and magnetic semiconductors, and the magnetism mainly originates from the spin polarization of doping atoms. For single or double NM elements doping VZn-g-ZnO, 2P doping system presents a semiconductor, while other systems present ferromagnetic metal, half-metal, and magnetic semiconductor. The magnetism of single NM elements doping VZn-g-ZnO mainly comes from the spin polarization of O atoms near the defect point. For double NM elements doping VZn-g-ZnO, spin splitting occurs mainly in p orbitals of O atoms, dopant atoms, and d orbitals of Zn atoms. NM elements doping defect g-ZnO can effectively regulate the electronic and magnetic properties of the system. METHODS The software package VASP 5.4.1 (Vienna ab initio Simulation Package) is used for calculations in this paper. The local density approximation (LDA) is adopted as an exchange and correlation function to perform the structural optimization and analysis of electronic structure and magnetic properties.
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Affiliation(s)
- Junqing Wen
- School of Science, Xi'an Shiyou University, Xi'an, 710065, China.
| | - Mengqian Shi
- School of Science, Xi'an Shiyou University, Xi'an, 710065, China
| | - Pei Lin
- School of Science, Xi'an Shiyou University, Xi'an, 710065, China
| | - Guoxiang Chen
- School of Science, Xi'an Shiyou University, Xi'an, 710065, China
| | - Jianmin Zhang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710062, China
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3
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Nagarajan V, Ramesh R, Chandiramouli R. N-Nitrosamine sensing properties of novel penta-silicane nanosheets-a first-principles outlook. J Mol Model 2023; 29:309. [PMID: 37688608 DOI: 10.1007/s00894-023-05711-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2023] [Accepted: 08/29/2023] [Indexed: 09/11/2023]
Abstract
CONTEXT N-Nitrosamine is one of the highly toxic carcinogenic compounds that are found almost in the entire environment. In the present work, novel penta-silicene (penta-Si) and penta-silicane (penta-HSi) are utilised to sense the N-nitrosamine in the air environment. Initially, structural firmness of penta-Si and penta-HSi is confirmed using cohesive energy. Subsequently, the electronic properties of penta-Si and penta-HSi are discussed with the aid of electronic band structure and projected density of states (PDOS) maps. The calculated band gap of penta-Si and penta-HSi is 0.251 eV and 3.117 eV, correspondingly. Mainly, the adsorption property of N-nitrosamine on the penta-Si and penta-HSi is studied based on adsorption energy, Mulliken population analysis along with relative energy gap changes. The computed adsorption energy range is in physisorption (- 0.101 to - 0.619 eV), which recommends that the proposed penta-Si and penta-HSi can be employed as a promising sensor to detect the N-nitrosamine in the air environment. METHODS The structural, electronic and adsorption behaviour of N-nitrosamine on penta-Si and penta-HSi are studied based on the density functional theory (DFT) approach. The hybrid generalized gradient approximation (GGA) with Becke's three-parameter (B3) + Lee-Yang-Parr (LYP) exchange correlation functional is used to optimise the base material. All calculations in the present work are carried out in Quantum-ATK-Atomistic Simulation Software.
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Affiliation(s)
- V Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India
| | - R Ramesh
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India
| | - R Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India.
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Zhang Y, Dong S, Murugan P, Zhu T, Qing C, Liu Z, Zhang W, Wang HE. Engineering electronic structures and optical properties of a MoSi 2N 4 monolayer via modulating surface hydrogen chemisorption. RSC Adv 2023; 13:26475-26483. [PMID: 37671350 PMCID: PMC10476555 DOI: 10.1039/d3ra04428a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Accepted: 08/29/2023] [Indexed: 09/07/2023] Open
Abstract
Recently, a MoSi2N4 monolayer has been successfully synthesized by a delicately designed chemical vapor deposition (CVD) method. It exhibits promising (opto)electronic properties due to a relatively narrow bandgap (∼1.94 eV), high electron/hole mobility, and excellent thermal/chemical stability. Currently, much effort is being devoted to further improving its properties through engineering defects or constructing nanocomposites (e.g., van der Waals heterostructures). Herein, we report a theoretical investigation on hydrogenation as an alternative surface functionalization approach to effectively manipulate its electronic structures and optical properties. The calculation results suggested that chemisorption of H atoms on the top of N atoms on MoSi2N4 was energetically most favored. Upon H chemisorption, the band gap values gradually decreased from 1.89 eV (for intrinsic MoSi2N4) to 0 eV (for MoSi2N4-16H) and 0.25 eV (for MoSi2N4-32H), respectively. The results of optical properties studies revealed that a noticeable enhancement in light absorption intensity could be realized in the visible light range after the surface hydrogenation process. Specifically, full-hydrogenated MoSi2N4 (MoSi2N4-32H) manifested a higher absorption coefficient than that of semi-hydrogenated MoSi2N4 (MoSi2N4-16H) in the visible light range. This work can provide theoretical guidance for rational engineering of optical and optoelectronic properties of MoSi2N4 monolayer materials via surface hydrogenation towards emerging applications in electronics, optoelectronics, photocatalysis, etc.
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Affiliation(s)
- Yumei Zhang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Shunhong Dong
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Pachaiyappan Murugan
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Ting Zhu
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Chen Qing
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Zhiyong Liu
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Weibin Zhang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Hong-En Wang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
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Bhuvaneswari R, Nagarajan V, Chandiramouli R. Recent progress on the synthesis, properties and applications of antimonene - A mini-review. J Mol Graph Model 2023; 122:108473. [PMID: 37060642 DOI: 10.1016/j.jmgm.2023.108473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/31/2023] [Accepted: 04/03/2023] [Indexed: 04/08/2023]
Abstract
The recent advancement in group VA monolayer and few-layer materials leads to fascinating applications. In this mini-review, we present the state-of-the-art in the synthesis of antimonene, its properties and various applications. Besides, the electronic properties of antimonene depend on its allotropes. Furthermore, we studied the electronic properties of δ, ε, and twisted-θ antimonene nanosheets, nanoribbons, and nanoring, and the results are reported. Moreover, the structural stability and electronic properties of antimonene is influenced by its allotrope and nanostructure. The report will give insights into the synthesis, properties, applications, and future outlook of antimonene.
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Zhang S, Wu C, Geng C, Wang T, Zhou P, Chen H, Dong Z, Zhong C. A first-principles study on the multiferroicity of semi-modified X 2M (X = C, Si; M = F, Cl) monolayers. Phys Chem Chem Phys 2023; 25:7965-7973. [PMID: 36866752 DOI: 10.1039/d2cp04575c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2023]
Abstract
The research of two-dimensional multiferroic materials has attracted extensive attention in recent years. In this work, we systematically investigated the multiferroic properties of semi-fluorinated and semi-chlorinated graphene and silylene X2M (X = C, Si; M = F, Cl) monolayers under strain using first principles calculations based on density functional theory. We find that the X2M monolayer has a frustrated antiferromagnetic order, and a large polarization with a high reversal potential barrier. When increasing the applied biaxial tensile strain, the magnetic order remains unchanged, but the polarization flipping potential barrier of X2M gradually decreases. When the strain increases to 35%, although the energy required to flip the fluorine and chlorine atoms is still very high in the C2F and C2Cl monolayers, it goes down to 312.5 meV and 260 meV in unit cells of the Si2F and Si2Cl monolayers, respectively. At the same time, both semi-modified silylenes exhibit metallic ferroelectricity with a band gap of at least 0.275 eV in the direction perpendicular to the plane. The results of these studies show that Si2F and Si2Cl monolayers may become a new generation of information storage materials with magnetoelectric multifunctional properties.
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Affiliation(s)
- Shijun Zhang
- School of Sciences, Nantong University, Nantong 226019, China.
| | - Chunxiang Wu
- School of Sciences, Nantong University, Nantong 226019, China.
| | - Chenduo Geng
- School of Sciences, Nantong University, Nantong 226019, China.
| | - Tianyi Wang
- School of Sciences, Nantong University, Nantong 226019, China. .,Nantong High School, Nantong 226001, China
| | - Pengxia Zhou
- School of Sciences, Nantong University, Nantong 226019, China. .,Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Hongli Chen
- School of Sciences, Nantong University, Nantong 226019, China. .,School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhengchao Dong
- School of Sciences, Nantong University, Nantong 226019, China. .,Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chonggui Zhong
- School of Sciences, Nantong University, Nantong 226019, China. .,School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
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Nagarajan V, Bhuvaneswari R, Chandiramouli R. Adsorption studies of camphene and eucalyptol molecules on orthorhombic germanane nanosheet - A first-principles investigation. J Mol Graph Model 2023; 119:108395. [PMID: 36549225 DOI: 10.1016/j.jmgm.2022.108395] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 12/08/2022] [Accepted: 12/09/2022] [Indexed: 12/15/2022]
Abstract
In the present work, we deployed a novel orthorhombic germanane nanosheet (ortho-GeNS) as a sensing material to detect camphene and eucalyptol molecules, the indoor air pollutants in the ambient environment. In the beginning, the structural and dynamical permanency of ortho-GeNS is confirmed with cohesive energy (-4.164eV/atom) and phonon-band maps. Successively, the electronic features of ortho-GeNS are conferred using band structure along with the projected density of states maps. The energy gap of ortho-GeNS at the hybrid GGA/B3LYP level of theory is computed to be 3.948 eV. Mainly, the adsorption properties of terpinene molecules, namely camphene and eucalyptol on ortho-GeNS are investigated via ascertaining adsorption energy, Mulliken population analysis, and relative band gap variations. Besides, the scope of adsorption energy values (-0.405eVto-0.669eV) exemplifies that the target molecules are physisorbed on ortho-GeNS. Overall results suggested that the ortho-GeNS can be deployed as a worthy chemiresistive sensor to sense indoor air pollutants for monitoring indoor air quality.
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Affiliation(s)
- V Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India
| | - R Bhuvaneswari
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India
| | - R Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, Thanjavur, 613 401, India.
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8
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Feature-rich electronic and magnetic properties in silicene monolayer induced by nitrogenation: A first-principles study. Chem Phys 2023. [DOI: 10.1016/j.chemphys.2023.111844] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
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9
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Jyothi MS, Nagarajan V, Chandiramouli R. M-cymene and m-xylene adsorption studies on hex-star arsenene nanosheets – a DFT investigation. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2140082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Affiliation(s)
- M. S. Jyothi
- Department of Chemistry, AMC Engineering College, Bengaluru, India
| | - V. Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, India
| | - R. Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, India
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10
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Aniline and chlorobenzene interaction studies on θ-arsenene nanosheet - a first-principles study. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.110081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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11
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First-principles calculations to investigate electronic structures and magnetic regulation of non-metallic elements doped BP with point defects. J Mol Graph Model 2022; 118:108370. [DOI: 10.1016/j.jmgm.2022.108370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/28/2022] [Accepted: 11/01/2022] [Indexed: 11/06/2022]
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12
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Sensing response of novel ε-antimonene nanosheet towards ethyl acetate and isopropyl acetate – A DFT insight. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111632] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
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13
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Acetophenone and benzophenone adsorption studies on θ-phosphorene nanosheets – A DFT investigation. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113808] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
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Cyclohexane and n-Hexane adsorption studies on novel hex-star antimonene nanosheets - a first-principles outlook. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109823] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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15
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Nagarajan V, Deepika K, Swetha B, Reddy KM, Chandiramouli R. δ-antimonene nanosheet as a sensing element for ethyl acetate and butyl acetate – a first-principles study. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2103469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/16/2022]
Affiliation(s)
- V. Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - Kota Deepika
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - Baswa Swetha
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - Korni Manideep Reddy
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - R. Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
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Tetrahydrofuran and 2-methyltetrahydrofuran adsorption studies on violet phosphorene nanosheets based on first-principles studies. J Mol Liq 2022. [DOI: 10.1016/j.molliq.2022.119062] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
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17
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Jyothi M, Nagarajan V, Chandiramouli R. Physisorption of trichloroethylene and tetrachloroethylene on novel zeta arsenene nanotubes – A first-principles study. J Mol Graph Model 2022; 115:108233. [DOI: 10.1016/j.jmgm.2022.108233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2022] [Revised: 05/22/2022] [Accepted: 05/23/2022] [Indexed: 10/18/2022]
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Ipaves B, Justo JF, V C Assali L. Functionalized few-layer silicene nanosheets: stability, elastic, structural, and electronic properties. Phys Chem Chem Phys 2022; 24:8705-8715. [PMID: 35373224 DOI: 10.1039/d1cp05867c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This paper presents an ab initio investigation, performed in the framework of density functional theory, on the properties of functionalized few-layer silicene nanosheets, denoted as Si2X2 bilayers and Si4X2 trilayers with X = B, N, Al, and P. Searching for stable phases, we computed the structural, energetic, thermodynamic, dynamic, elastic, and electronic properties of those systems in several stacking configurations, labeled as AA', AB, AA'A'', and ABC. The results revealed that AA'-Si2N2, AB-Si2N2, AA'-Si2P2, and AB-Si2P2 bilayers, as well as ABC-Si4B2, ABC-Si4Al2, AA'A''-Si4P2, and ABC-Si4P2 trilayers are all dynamically stable, based on their respective phonon dispersion spectra. Particularly, there is scarce literature regarding functionalized trilayer silicene systems and, in this work, we found four new nanosheet systems with interesting physical properties and promising applications. Additionally, according to their standard enthalpies of formation and by exploring their electronic properties, we established that those structures could be experimentally accessed, and we discovered that those silicene nanosheets are indirect band gap semiconductors when functionalized with N or P atoms and metallic with B or Al ones. Finally, we envision potential applications for those nanosheets in alkali-metal ion batteries, van der Waals heterostructures, UV-light devices, and thermoelectric materials.
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Affiliation(s)
- Bruno Ipaves
- Instituto de Física, Universidade de São Paulo, São Paulo - SP, Brazil.
| | - João F Justo
- Escola Politécnica, Universidade de São Paulo, São Paulo - SP, Brazil
| | - Lucy V C Assali
- Instituto de Física, Universidade de São Paulo, São Paulo - SP, Brazil.
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Ougherb C, Ouahrani T, Badawi M, Morales-García Á. Effect of the sulfur termination on the properties of Hf 2CO 2 MXene. Phys Chem Chem Phys 2022; 24:7243-7252. [PMID: 35274659 DOI: 10.1039/d2cp00288d] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
A computational study was carried out to investigate the effect of surface termination on Janus Hf2COS MXene by substituting partly the O-terminated layer with S atoms. Our predictions confirm that this chemical strategy allows one to tailor the band gap of MXenes. Indeed, the semiconducting character of Hf2CO2 MXene decreases by the exchange of O by S atoms. From a structural point of view, dynamical, mechanical, and thermal analysis confirm the thermodynamic stability of the Janus Hf2COS MXene, which shows metallic character. Furthermore, topological chemical analysis indicates an ionic nature of Hf2CO2 MXene that tends to be reduced by increasing the concentration of S atoms, promoting a covalent character. Shortly, the present study illustrates how the properties of MXenes can be tailored by functionalizing them with different chemical terminations.
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Affiliation(s)
- Chewki Ougherb
- Laboratoire de Physique Théorique, Université de Tlemcen, 1300, Algeria.
| | - Tarik Ouahrani
- Laboratoire de Physique Théorique, Université de Tlemcen, 1300, Algeria.
| | - Michael Badawi
- Université de Lorraine and CNRS, LPCT, UMR 7019, 54506 Vandoeuvre-lés-Nancy, France
| | - Ángel Morales-García
- Departament de Ciéncia de Materials i Química Física & Institut de Química Teórica i Computacional (IQTCUB), Universitat de Barcelona, c/Martí i Franquès 1-11, 08028 Barcelona, Spain.
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Adsorption studies of SF6 and decomposed constituents on 4-8 arsenene nanotubes – a first-principles study. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113663] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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21
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Chandiramouli R, Deepika K, Manideep Reddy K, Swetha B, Nagarajan V. Methylcyclohexane and methyl methacrylate sensing studies using γ-arsenene nanoribbon – a first-principles investigation. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113595] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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22
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Molecular interaction studies of styrene on single and double-walled square-octagon phosphorene nanotubes – First-principles investigation. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139149] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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23
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Chen QY, Liu MY, Cao C, He Y. Strain-dependent optical properties of the novel monolayer group-IV dichalcogenides SiS 2semiconductor: a first-principles study. NANOTECHNOLOGY 2021; 32:235201. [PMID: 33647888 DOI: 10.1088/1361-6528/abeada] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 03/01/2021] [Indexed: 06/12/2023]
Abstract
We studied the structural, electronic, and optical characters of SiS2, a new type of group IV-VI two-dimensional semiconductor, in this article. We focused on monolayer SiS2and its characteristic changes when different strains are applied on it. Results reveal that the monolayer SiS2is dynamically stable when no strain is applied. In terms of electronic properties, it remains a semiconductor under applied strain within the range from -10% to 10%. Besides, its indirect band-gap is altered regularly after applying a strain, whereas different strains lead to various changing trends. As for its optical properties, it exhibits remarkable transparency for infrared and most visible light. Its main absorption and reflection regions lie in the blue and ultraviolet areas. The applied uniaxial strain causes its different optical properties along the armchair direction and zigzag direction. Moreover, the tensile strain could tune its optical properties more effectively than the compressive strain. When different strains are applied, the major changes are in blue and ultraviolet regions, but only minor changes can be found in infrared and visible regions. So its optical properties reveal good stability in infrared and visible regions. Therefore, SiS2has a promising prospect in nano-electronic and nano-photoelectric devices.
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Affiliation(s)
- Qing-Yuan Chen
- School of Physical Science and Technology, Kunming University, Kunming, 650214, People's Republic of China
| | - Ming-Yang Liu
- Department of Physics, Yunnan University, NO.2 Green Lake North Road, Wu Hua Qu, Kunming, Yunnan Province 650091, People's Republic of China
| | - Chao Cao
- Department of Physics, Hangzhou Normal University, NO.16 Xue Lin Street, Xia Sha Gao Jiao Yuan Qu Hangzhou, Zhe Jiang Province 310036, People's Republic of China
| | - Yao He
- Department of Physics, Yunnan University, NO.2 Green Lake North Road, Wu Hua Qu, Kunming, Yunnan Province 650091, People's Republic of China
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Bafekry A, Stampfl C, Nguyen C, Ghergherehchi M, Mortazavi B. Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite). Phys Chem Chem Phys 2020; 22:24471-24479. [DOI: 10.1039/d0cp04388e] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Abstract
Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt2HgSe3. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.
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Affiliation(s)
| | - Catherine Stampfl
- School of Physics
- The University of Sydney
- New South Wales 2006
- Australia
| | - Chuong Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Hanoi 100000
- Vietnam
| | - Mitra Ghergherehchi
- College of Electronic and Electrical Engineering
- Sungkyun Kwan University
- Suwon
- Korea
| | - Bohayra Mortazavi
- Chair of Computational Science and Simulation Technology
- Department of Mathematics and Physics
- Institute of Photonics, Leibniz Universität Hannover
- 30157 Hannover
- Germany
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25
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Bhuvaneswari R, Nagarajan V, Chandiramouli R. Expedition on surface adsorption of N-nitrosodiethylamine from rubber fumes on blue phosphorene sheets – a first-principles insight. Mol Phys 2019. [DOI: 10.1080/00268976.2019.1699184] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
Affiliation(s)
- R. Bhuvaneswari
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - V. Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
| | - R. Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Thanjavur, India
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26
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Chen QY, Liu MY, Cao C, He Y. Strain-tunable electronic and optical properties of novel anisotropic green phosphorene: a first-principles study. NANOTECHNOLOGY 2019; 30:335710. [PMID: 31035273 DOI: 10.1088/1361-6528/ab1dc1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The effect of in-layer strain on the optical and electrical properties of monolayer green phosphorene, a new anisotropic two-dimensional (2D) material, has been systematically studied. The studied strain includes in-layer uniaxial strain and biaxial strain. Green phosphorene can be viewed as a combination of black and blue phosphorene segments in regular order. We adopt the HSE06 method to correct the calculated results. The results reveal that, firstly, strain-free monolayer green phosphorene is a stable direct band gap 2D semiconductor with the anisotropic optical property. The transmittance of infrared and visible light along the zigzag direction is better than that along the armchair direction. However, the transmittance of the UV-light along the armchair direction is better than that along the zigzag direction. Secondly, the optical properties, such as the absorption coefficient and reflectivity, along armchair and zigzag direction respond very differently to the various applied strains. As for the electronic properties, the band gap exhibits different changing trends by applying either in-layer biaxial strain or uniaxial strain in different directions. Besides, the near-band-edge electronic orbitals exhibit different bond nature in different directions. These results suggest that green phosphorene shows strong anisotropy in electronic and optical properties. By calculating and comparing the energies of near-band-edge states after applying different strains on green phosphorene, the reason for the anisotropy of the new 2D material is analyzed. This study implies that the electronic and optical properties of green phosphorene, a stable direct band gap anisotropic semiconductor, could be efficiently tuned by in-layer biaxial or uniaxial strain. Therefore, green phosphorene can be used in linear polarizers and other anisotropic photoelectric devices.
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Affiliation(s)
- Qing-Yuan Chen
- Department of Physics, Yunnan University, No. 2 Green Lake North Road, Wu Hua Qu Kunming, Yunnan Province 650091, People's Republic of China
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27
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Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.02.005] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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28
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Le PTT, Hieu NN, Bui LM, Phuc HV, Hoi BD, Amin B, Nguyen CV. Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field. Phys Chem Chem Phys 2018; 20:27856-27864. [PMID: 30398248 DOI: 10.1039/c8cp05588b] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.
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Affiliation(s)
- P T T Le
- Theoretical Physics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam.
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Mao Y, Xu H, Yuan J, Zhong J. Functionalization of the electronic and magnetic properties of silicene by halogen atoms unilateral adsorption: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:365001. [PMID: 30063031 DOI: 10.1088/1361-648x/aad6f9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Based on first-principles calculations, the structure, electronic and magnetic properties of unilateral halogenated silicene Si2X1 (X = F, Cl, Br, I) are investigated. The formation energies of all the configurations of studied Si2X1 (X = F, Cl, Br, I) are found to be lower than that in pristine silicene, which indicates the strong stability. The band structure of half-fluorinated configuration Si2F1 presents metallic property, while other unilateral halogenated silicene Si2X1 (X = Cl, Br, I) exhibits half-metallic properties. In unilateral halogenated silicene Si2X1 (X = Cl, Br, I), the unpaired electrons in unsaturated silicon atom produce the localized magnetic moment. However, due to the strong electronegativity in F atom, the half-fluorinated silicene Si2F1 is almost non-magnetic. The metallic property of Si2F1 configuration can be tuned to half-metallic by applying biaxial tensile strain from 11.95% to 13.51%. Furthermore, applying biaxial tensile strains can tune the half-metallic property of unilateral halogenated silicene Si2X1 (X = Cl, Br, I) to a semiconductor. This half-metallic property in unilateral halogenated silicene Si2X1 (X = Cl, Br, I) can be recovered and can even be tuned to metallic if continually increasing the biaxial tensile strains.
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Affiliation(s)
- Yuliang Mao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan 411105, People's Republic of China
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Krawiec M. Functionalization of group-14 two-dimensional materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:233003. [PMID: 29708504 DOI: 10.1088/1361-648x/aac149] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp2 and sp3 orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.
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Affiliation(s)
- Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
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Nakano H, Tetsuka H, Spencer MJS, Morishita T. Chemical modification of group IV graphene analogs. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2018; 19:76-100. [PMID: 29410713 PMCID: PMC5795708 DOI: 10.1080/14686996.2017.1422224] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2017] [Revised: 12/25/2017] [Accepted: 12/25/2017] [Indexed: 05/31/2023]
Abstract
Mono-elemental two-dimensional (2D) crystals (graphene, silicene, germanene, stanene, and so on), termed 2D-Xenes, have been brought to the forefront of scientific research. The stability and electronic properties of 2D-Xenes are main challenges in developing practical devices. Therefore, in this review, we focus on 2D free-standing group-IV graphene analogs (graphene quantum dots, silicane, and germanane) and the functionalization of these sheets with organic moieties, which could be handled under ambient conditions. We highlight the present results and future opportunities, functions and applications, and novel device concepts.
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