Hex-star phosphorene nanosheets as sequencing material for DNA/RNA strands - A first-principles investigation

In this study, we utilised hex-star phosphorene as the main detecting material to identify the nucleobases. Nucleobases, being crucial carriers of hereditary information are identified through specific hydrogen bonding and steric interactions such as adenine pairing with thymine (or) uracil and guanine pairing with cytosine. The stable hex-star phosphorene possesses negative formation energy of -5.194 eV. The hex-star phosphorene exhibits a semiconductor nature with an energy band gap of 1.658 eV, which is deployed as the adsorbing substrate for nucleobases. Based on the Mulliken charge analysis, adsorption energy, relative band gap variation, and the detection efficiency of hex-star phosphorene towards nucleobases are examined. The outcome confirms the physisorption of nucleobases on hex-star phosphorene and strongly supports that hex-star phosphorene can be used as sequencing material for DNA and RNA.

Tunable electronic and magnetic properties of defective g-ZnO monolayer doping with non-metallic elements

CONTEXT

The electronic and magnetic properties of non-metallic (NM) elements doping defective graphene-like ZnO (g-ZnO) monolayer including O vacancy (VO) and Zn vacancy (VZn) are studied. The results show that VO-g-ZnO is a semiconductor and VZn-g-ZnO is a magnetic semiconductor. B, C, N, Si, P, 2S, and 2Si doping VO-g-ZnO systems present half-metal and magnetic semiconductors, and the magnetism mainly originates from the spin polarization of doping atoms. For single or double NM elements doping VZn-g-ZnO, 2P doping system presents a semiconductor, while other systems present ferromagnetic metal, half-metal, and magnetic semiconductor. The magnetism of single NM elements doping VZn-g-ZnO mainly comes from the spin polarization of O atoms near the defect point. For double NM elements doping VZn-g-ZnO, spin splitting occurs mainly in p orbitals of O atoms, dopant atoms, and d orbitals of Zn atoms. NM elements doping defect g-ZnO can effectively regulate the electronic and magnetic properties of the system.

METHODS

The software package VASP 5.4.1 (Vienna ab initio Simulation Package) is used for calculations in this paper. The local density approximation (LDA) is adopted as an exchange and correlation function to perform the structural optimization and analysis of electronic structure and magnetic properties.

N-Nitrosamine sensing properties of novel penta-silicane nanosheets-a first-principles outlook

CONTEXT

N-Nitrosamine is one of the highly toxic carcinogenic compounds that are found almost in the entire environment. In the present work, novel penta-silicene (penta-Si) and penta-silicane (penta-HSi) are utilised to sense the N-nitrosamine in the air environment. Initially, structural firmness of penta-Si and penta-HSi is confirmed using cohesive energy. Subsequently, the electronic properties of penta-Si and penta-HSi are discussed with the aid of electronic band structure and projected density of states (PDOS) maps. The calculated band gap of penta-Si and penta-HSi is 0.251 eV and 3.117 eV, correspondingly. Mainly, the adsorption property of N-nitrosamine on the penta-Si and penta-HSi is studied based on adsorption energy, Mulliken population analysis along with relative energy gap changes. The computed adsorption energy range is in physisorption (- 0.101 to - 0.619 eV), which recommends that the proposed penta-Si and penta-HSi can be employed as a promising sensor to detect the N-nitrosamine in the air environment.

METHODS

The structural, electronic and adsorption behaviour of N-nitrosamine on penta-Si and penta-HSi are studied based on the density functional theory (DFT) approach. The hybrid generalized gradient approximation (GGA) with Becke's three-parameter (B3) + Lee-Yang-Parr (LYP) exchange correlation functional is used to optimise the base material. All calculations in the present work are carried out in Quantum-ATK-Atomistic Simulation Software.

Engineering electronic structures and optical properties of a MoSi2N4 monolayer via modulating surface hydrogen chemisorption

Recently, a MoSi2N4 monolayer has been successfully synthesized by a delicately designed chemical vapor deposition (CVD) method. It exhibits promising (opto)electronic properties due to a relatively narrow bandgap (∼1.94 eV), high electron/hole mobility, and excellent thermal/chemical stability. Currently, much effort is being devoted to further improving its properties through engineering defects or constructing nanocomposites (e.g., van der Waals heterostructures). Herein, we report a theoretical investigation on hydrogenation as an alternative surface functionalization approach to effectively manipulate its electronic structures and optical properties. The calculation results suggested that chemisorption of H atoms on the top of N atoms on MoSi2N4 was energetically most favored. Upon H chemisorption, the band gap values gradually decreased from 1.89 eV (for intrinsic MoSi2N4) to 0 eV (for MoSi2N4-16H) and 0.25 eV (for MoSi2N4-32H), respectively. The results of optical properties studies revealed that a noticeable enhancement in light absorption intensity could be realized in the visible light range after the surface hydrogenation process. Specifically, full-hydrogenated MoSi2N4 (MoSi2N4-32H) manifested a higher absorption coefficient than that of semi-hydrogenated MoSi2N4 (MoSi2N4-16H) in the visible light range. This work can provide theoretical guidance for rational engineering of optical and optoelectronic properties of MoSi2N4 monolayer materials via surface hydrogenation towards emerging applications in electronics, optoelectronics, photocatalysis, etc.

Recent progress on the synthesis, properties and applications of antimonene - A mini-review

The recent advancement in group VA monolayer and few-layer materials leads to fascinating applications. In this mini-review, we present the state-of-the-art in the synthesis of antimonene, its properties and various applications. Besides, the electronic properties of antimonene depend on its allotropes. Furthermore, we studied the electronic properties of δ, ε, and twisted-θ antimonene nanosheets, nanoribbons, and nanoring, and the results are reported. Moreover, the structural stability and electronic properties of antimonene is influenced by its allotrope and nanostructure. The report will give insights into the synthesis, properties, applications, and future outlook of antimonene.

A first-principles study on the multiferroicity of semi-modified X2M (X = C, Si; M = F, Cl) monolayers

The research of two-dimensional multiferroic materials has attracted extensive attention in recent years. In this work, we systematically investigated the multiferroic properties of semi-fluorinated and semi-chlorinated graphene and silylene X₂M (X = C, Si; M = F, Cl) monolayers under strain using first principles calculations based on density functional theory. We find that the X₂M monolayer has a frustrated antiferromagnetic order, and a large polarization with a high reversal potential barrier. When increasing the applied biaxial tensile strain, the magnetic order remains unchanged, but the polarization flipping potential barrier of X₂M gradually decreases. When the strain increases to 35%, although the energy required to flip the fluorine and chlorine atoms is still very high in the C₂F and C₂Cl monolayers, it goes down to 312.5 meV and 260 meV in unit cells of the Si₂F and Si₂Cl monolayers, respectively. At the same time, both semi-modified silylenes exhibit metallic ferroelectricity with a band gap of at least 0.275 eV in the direction perpendicular to the plane. The results of these studies show that Si₂F and Si₂Cl monolayers may become a new generation of information storage materials with magnetoelectric multifunctional properties.

Adsorption studies of camphene and eucalyptol molecules on orthorhombic germanane nanosheet - A first-principles investigation

In the present work, we deployed a novel orthorhombic germanane nanosheet (ortho-GeNS) as a sensing material to detect camphene and eucalyptol molecules, the indoor air pollutants in the ambient environment. In the beginning, the structural and dynamical permanency of ortho-GeNS is confirmed with cohesive energy (-4.164eV/atom) and phonon-band maps. Successively, the electronic features of ortho-GeNS are conferred using band structure along with the projected density of states maps. The energy gap of ortho-GeNS at the hybrid GGA/B3LYP level of theory is computed to be 3.948 eV. Mainly, the adsorption properties of terpinene molecules, namely camphene and eucalyptol on ortho-GeNS are investigated via ascertaining adsorption energy, Mulliken population analysis, and relative band gap variations. Besides, the scope of adsorption energy values (-0.405eVto-0.669eV) exemplifies that the target molecules are physisorbed on ortho-GeNS. Overall results suggested that the ortho-GeNS can be deployed as a worthy chemiresistive sensor to sense indoor air pollutants for monitoring indoor air quality.

Functionalized few-layer silicene nanosheets: stability, elastic, structural, and electronic properties

This paper presents an ab initio investigation, performed in the framework of density functional theory, on the properties of functionalized few-layer silicene nanosheets, denoted as Si₂X₂ bilayers and Si₄X₂ trilayers with X = B, N, Al, and P. Searching for stable phases, we computed the structural, energetic, thermodynamic, dynamic, elastic, and electronic properties of those systems in several stacking configurations, labeled as AA', AB, AA'A'', and ABC. The results revealed that AA'-Si₂N₂, AB-Si₂N₂, AA'-Si₂P₂, and AB-Si₂P₂ bilayers, as well as ABC-Si₄B₂, ABC-Si₄Al₂, AA'A''-Si₄P₂, and ABC-Si₄P₂ trilayers are all dynamically stable, based on their respective phonon dispersion spectra. Particularly, there is scarce literature regarding functionalized trilayer silicene systems and, in this work, we found four new nanosheet systems with interesting physical properties and promising applications. Additionally, according to their standard enthalpies of formation and by exploring their electronic properties, we established that those structures could be experimentally accessed, and we discovered that those silicene nanosheets are indirect band gap semiconductors when functionalized with N or P atoms and metallic with B or Al ones. Finally, we envision potential applications for those nanosheets in alkali-metal ion batteries, van der Waals heterostructures, UV-light devices, and thermoelectric materials.

Effect of the sulfur termination on the properties of Hf2CO2 MXene

A computational study was carried out to investigate the effect of surface termination on Janus Hf₂COS MXene by substituting partly the O-terminated layer with S atoms. Our predictions confirm that this chemical strategy allows one to tailor the band gap of MXenes. Indeed, the semiconducting character of Hf₂CO₂ MXene decreases by the exchange of O by S atoms. From a structural point of view, dynamical, mechanical, and thermal analysis confirm the thermodynamic stability of the Janus Hf₂COS MXene, which shows metallic character. Furthermore, topological chemical analysis indicates an ionic nature of Hf₂CO₂ MXene that tends to be reduced by increasing the concentration of S atoms, promoting a covalent character. Shortly, the present study illustrates how the properties of MXenes can be tailored by functionalizing them with different chemical terminations.

Strain-dependent optical properties of the novel monolayer group-IV dichalcogenides SiS2semiconductor: a first-principles study

We studied the structural, electronic, and optical characters of SiS₂, a new type of group IV-VI two-dimensional semiconductor, in this article. We focused on monolayer SiS₂and its characteristic changes when different strains are applied on it. Results reveal that the monolayer SiS₂is dynamically stable when no strain is applied. In terms of electronic properties, it remains a semiconductor under applied strain within the range from -10% to 10%. Besides, its indirect band-gap is altered regularly after applying a strain, whereas different strains lead to various changing trends. As for its optical properties, it exhibits remarkable transparency for infrared and most visible light. Its main absorption and reflection regions lie in the blue and ultraviolet areas. The applied uniaxial strain causes its different optical properties along the armchair direction and zigzag direction. Moreover, the tensile strain could tune its optical properties more effectively than the compressive strain. When different strains are applied, the major changes are in blue and ultraviolet regions, but only minor changes can be found in infrared and visible regions. So its optical properties reveal good stability in infrared and visible regions. Therefore, SiS₂has a promising prospect in nano-electronic and nano-photoelectric devices.

Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite)

Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt₂HgSe₃. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.

Strain-tunable electronic and optical properties of novel anisotropic green phosphorene: a first-principles study

The effect of in-layer strain on the optical and electrical properties of monolayer green phosphorene, a new anisotropic two-dimensional (2D) material, has been systematically studied. The studied strain includes in-layer uniaxial strain and biaxial strain. Green phosphorene can be viewed as a combination of black and blue phosphorene segments in regular order. We adopt the HSE06 method to correct the calculated results. The results reveal that, firstly, strain-free monolayer green phosphorene is a stable direct band gap 2D semiconductor with the anisotropic optical property. The transmittance of infrared and visible light along the zigzag direction is better than that along the armchair direction. However, the transmittance of the UV-light along the armchair direction is better than that along the zigzag direction. Secondly, the optical properties, such as the absorption coefficient and reflectivity, along armchair and zigzag direction respond very differently to the various applied strains. As for the electronic properties, the band gap exhibits different changing trends by applying either in-layer biaxial strain or uniaxial strain in different directions. Besides, the near-band-edge electronic orbitals exhibit different bond nature in different directions. These results suggest that green phosphorene shows strong anisotropy in electronic and optical properties. By calculating and comparing the energies of near-band-edge states after applying different strains on green phosphorene, the reason for the anisotropy of the new 2D material is analyzed. This study implies that the electronic and optical properties of green phosphorene, a stable direct band gap anisotropic semiconductor, could be efficiently tuned by in-layer biaxial or uniaxial strain. Therefore, green phosphorene can be used in linear polarizers and other anisotropic photoelectric devices.

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.

Functionalization of the electronic and magnetic properties of silicene by halogen atoms unilateral adsorption: a first-principles study

Based on first-principles calculations, the structure, electronic and magnetic properties of unilateral halogenated silicene Si₂X₁ (X  =  F, Cl, Br, I) are investigated. The formation energies of all the configurations of studied Si₂X₁ (X  =  F, Cl, Br, I) are found to be lower than that in pristine silicene, which indicates the strong stability. The band structure of half-fluorinated configuration Si₂F₁ presents metallic property, while other unilateral halogenated silicene Si₂X₁ (X  =  Cl, Br, I) exhibits half-metallic properties. In unilateral halogenated silicene Si₂X₁ (X  =  Cl, Br, I), the unpaired electrons in unsaturated silicon atom produce the localized magnetic moment. However, due to the strong electronegativity in F atom, the half-fluorinated silicene Si₂F₁ is almost non-magnetic. The metallic property of Si₂F₁ configuration can be tuned to half-metallic by applying biaxial tensile strain from 11.95% to 13.51%. Furthermore, applying biaxial tensile strains can tune the half-metallic property of unilateral halogenated silicene Si₂X₁ (X  =  Cl, Br, I) to a semiconductor. This half-metallic property in unilateral halogenated silicene Si₂X₁ (X  =  Cl, Br, I) can be recovered and can even be tuned to metallic if continually increasing the biaxial tensile strains.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Chemical modification of group IV graphene analogs

Mono-elemental two-dimensional (2D) crystals (graphene, silicene, germanene, stanene, and so on), termed 2D-Xenes, have been brought to the forefront of scientific research. The stability and electronic properties of 2D-Xenes are main challenges in developing practical devices. Therefore, in this review, we focus on 2D free-standing group-IV graphene analogs (graphene quantum dots, silicane, and germanane) and the functionalization of these sheets with organic moieties, which could be handled under ambient conditions. We highlight the present results and future opportunities, functions and applications, and novel device concepts.