Wu Z, Lin L, Yang W, Zhang D, Shen C, Lou W, Yin H, Chang K. Spin-polarized charge trapping cell based on a topological insulator quantum dot.
RSC Adv 2017. [DOI:
10.1039/c7ra03482b]
[Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We demonstrate theoretically that a topological insulator quantum dot can be formed via double topological insulator constrictions (TICs), and can be used as a charge and/or spin carrier trap memory element.
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