Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag2SrSiS4 and Ag2SrGeS4

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on I₂-II-IV-X₄ (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of antisite defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag₂SrSiS₄ and Ag₂SrGeS₄, each found to form in the tetragonal I4̅2m structure of Ag₂BaGeS₄. During the synthesis targeting the title compounds, two additional materials, Ag₂Sr₃Si₂S₈ and Ag₂Sr₃Ge₂S₈, have also been identified. These cubic compounds represent impurity phases during the synthesis of Ag₂SrSiS₄ and Ag₂SrGeS₄. We show through hybrid density functional theory calculations that Ag₂SrSiS₄ and Ag₂SrGeS₄ have highly dispersive band-edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag₂SrSiS₄ and Ag₂SrGeS₄ powders show frequency-doubling capabilities in the near-infrared range.

ab initio Energetics and Thermoelectric Profiles of Gallium Pnictide Polytypes

The state-of-the-art Density Functional Theory (DFT) is utilized to investigate the structural, electronic, vibrational, thermal and thermoelectric properties of gallium pnictides GaX (X = P, As, Sb) in cubic zincblende (ZB) and hexagonal wurtzite (WZ) phases. The lattice parameters, bulk modulus, energy band nature and bandgap values, phonon, thermal and thermoelectric properties are revisited for ZB phase while for WZ phase they are predictive. Our results agree reasonably well with the experimental and theoretical data wherever they are available. The phonon dispersion curves are computed to validate the dynamic stability of these two polytypes and for further investigating the thermal and thermoelectric properties. Our computed thermoelectric figure of merit ZT gives consistent results with highest observed magnitude of 0.72 and 0.56 for GaSb compound in ZB and WZ phases respectively. The first time calculated temperature variation of lattice thermal conductivity for WZ phase shows lower value than ZB phase and hence an important factor to enhance the figure of merit of considered gallium pnictides in WZ phase. Present results validate the importance of GaX in high temperature thermoelectric applications as the figure of merit ZT shows enhancement with significant reduction in thermal conductivity at higher temperature values.