Spin-polarized tunneling and polaronic transport properties of polycrystalline (Sm1-yGdy)0.55Sr0.45MnO3(y= 0.5 and 0.7) compounds

The detail investigations on the magneto-transport properties of the polycrystalline (Sm_0.3Gd_0.7)_0.55Sr_0.45MnO₃(SGSMO-1) and (Sm_0.5Gd_0.5)_0.55Sr_0.45MnO₃(SGSMO-2) compounds, having a glassy-like and ferromagnetic ground states respectively have been carried out in details. Due to the existence of two different magnetic ground states in the above mentioned systems, the magneto-transport properties are markedly differed from each other, specially at the low temperature region. The highly semi-conducting nature of the SGSMO-1 compound is suppressed with the application of magnetic field, whereas the SGSMO-2 compound exhibits a metal-insulator transition in its pristine state. The high-temperature semiconducting state of both the systems can be well-explained with the polaronic transport mechanisms via small-polaron hopping and variable-range-hopping models. The low-temperature metallic states for both the systems are explored by considering the various contributions arise from the grain boundary effect, electron-electron, electron-phonon, electron-magnon etc scattering processes. The spin-polarized tunneling transport mechanism at the grain boundaries plays a crucial role in the enhancement of low-field magnetoresistance in the studied systems.

Long-range ferromagnetic order in perovskite manganite La0.67Ba0.25Ca0.08Mn(1−x)TixO3 (x = 0.00, 0.05 and 0.10)

In this study, we report the effects of Ti on the critical behavior of La_0.67Ba_0.25Ca_0.08MnO₃ samples prepared by the flux method.

Large magnetic entropy change and prediction of magnetoresistance using a magnetic field in La0.5Sm0.1Sr0.4Mn0.975In0.025O3

A detailed study of the structural, magnetic, magnetocaloric and electrical effect properties in polycrystalline manganite La0.5Sm0.1Sr0.4Mn0.975In0.025O3 is presented. The X-ray diffraction pattern is consistent with a rhombohedral structure with R3̄c space group. Experimental results revealed that our compound prepared via a sol-gel method exhibits a continuous (second-order) ferromagnetic (FM) to paramagnetic (PM) phase transition around the Curie temperature (T C = 300 K). In addition, the magnetic entropy change was found to reach 5.25 J kg-1 K-1 under an applied magnetic field of 5 T, corresponding to a relative cooling power (RCP) of 236 J kg-1. We have fitted the experimental data of resistivity using a typical numerical method (Gauss function). The simulation values such as maximum resistivity (ρ max) and metal-semiconductor transition temperature (T M-Sc), calculated from this function, showed a perfect agreement with the experimental data. The shifts of these parameters as a function of magnetic field for our sample have been interpreted. The obtained values of β and γ, determined by analyzing the Arrott plots, are found to be T C = 298.66 ± 0.64 K, β = 0.325 ± 0.001 and γ = 1.25 ± 0.01. The critical isotherm M (T C, μ 0 H) gives δ = 4.81 ± 0.01. These critical exponent values are found to be consistent and comparable to those predicted by the three-dimensional Ising model with short-range interaction. Thus, the Widom scaling law is fulfilled.