Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Synapse-Mimicking Memristors Based on 3,6-Di(tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions

The title compound, unimer U (tpy stands for 2,2':6',2″-terpyridin-4'-yl end-group), by itself shows the memristor effect with a retention time of 18 h and persistence of 11 h. Its coordination copolymer with Co(II) ions, [CoU]n, exhibits multimodal resistance changes similar to the synaptic responses observed in biological systems. More than 320 cycles of potentiation and depression measured in continuous sequence occurred without observing a significant current change, confirming the operational stability and reproducibility of the device based on the [CoU]n polymer. The synaptic effect of a device with an indium tin oxide (ITO)/[CoU]n/top-electrode (TE) configuration is more pronounced for the device with TE = Au compared to devices with TE = Al or Ga. However, the latter TEs provide a cost-effective approach without any significant compromise in device plasticity. The detected changes in the synaptic weight, about 12% for pair-pulse facilitation and 80% for its depression, together with a millisecond trigger and reading pulses that decay exponentially on the time scale typical of neurosynapses, justify the device's ability to learn and memorize. These properties offer potential applications in neuromorphic computation and brain-inspired synaptic devices.

Monodentate versus Bidentate Anchoring Groups in Self-Assembling Molecules (SAMs) for Robust p-i-n Perovskite Solar Cells

Current improvement in perovskite solar cells (PSCs) has been achieved by interface engineering and fine-tuning of charge-selective contacts. In this work, we report three novel molecules that can form self-assembled layers (SAMs) as an alternative to the most commonly used p-type contact material, PTAA. Two of these molecules have bidentate anchoring groups (MC-54 and MC-55), while the last one is monodentate (MC-45). Besides the PTAA comparison, we also compared those two types of molecules and their effect on the solar cell's performance. Devices fabricated with MC-54 and MC-55 showed a remarkable field factor (about 80%) and a better current density, leading to higher efficient solar cells in comparison to MC-45 and PTAA. Moreover, mono- and bidentate present higher stability and reproducibility in comparison to PTAA.

Efficient ternary WORM memory devices from quinoline-based D-A systems by varying the redox behavior of ferrocene

The design and synthesis of ferrocene-functionalized organic small molecules using quinoline cores are rendered to achieve a ternary write-once-read-many (WORM) memory device. Introducing an electron-withdrawing group into the ferrocene system changes the compounds' photophysical, electrochemical, and memory behavior. The compounds were synthesized with and without an acetylene bridge between the ferrocene unit and quinoline. The electrochemical studies proved the oxidation behavior with a slightly less intense reduction peak of the ferrocene unit, demonstrating that quinolines have more reducing properties than ferrocene with bandgaps ranging from 2.67-2.75 eV. The single crystal analysis of the compounds also revealed good interactive interactions, ensuring good molecular packing. This further leads to a ternary WORM memory with oxidation of the ferrocene units and charge transfer in the compounds. The devices exhibit on/off ratios of 104 and very low threshold voltages of -0.58/-1.02 V with stabilities of 103 s and 100 cycles of all the states through retention and endurance tests.

Ion-in-Conjugation: A Promising Concept for Multifunctional Organic Semiconductors

Most organic semiconductors (OSCs) consist of conjugated skeletons with flexible peripheral chains. Their weak intermolecular interactions from dispersion and induction forces result in environmental susceptibilities and are unsuitable for many multifunctional applications where direct exposure to external environments is unavoidable, such as gas absorption, chemical sensing, and catalysis. To exploit the advantages of inorganic semiconductors in OSCs, ion-in-conjugation (IIC) materials are proposed. An IIC material refers to any conjugated material (molecules, polymers, and crystals) in Kekule's structural formula containing stoichiometric ionic states in its conjugated backbone in the electronic ground state. In this review, the definitions, structures, synthesis, properties, and applications of IIC materials are described briefly. Four types of IIC material, including zwitterionic conjugated molecules/polymers, conjugated ionic dyes, π-d conjugated molecules and polymers, and coordinatively doped polymers, are reported. Their applications in gas sensing, humidity sensing, resistive memory devices, and thermal/photo-/electro-catalysis are demonstrated. The challenges and opportunities for future research are also discussed. It is expected that this work will inspire the design of new organic electronic information materials.

Incorporating a redox active entity to attain electrical bistability in a polymer semiconductor

Owing to the advantages of 3-D printable stack, scalability and low cost solution state production, polymer-based resistive memory devices have been identified as the promising alternative for conventional oxide technology. Resistive memory devices based on the redox switch mechanism is particularly found to yield high precision with respect to the operational voltages. Reversible non-volatile resistive state switching was realized with high device yield (>80%), with a redox-active chemical entity conjugated to the polymeric semiconductor, and the control experiments with the model compound confirmed the imperative role of the redox-active anthraquinone center in the polymeric backbone. Highly uniform nanodomains and the trap free layers excluded the possibilities of other known switching mechanisms. Optical studies and the molecular modelling data assert the presence of strong charge transfer characteristics upon optical excitation due to the insertion of the anthraquinone unit, which was detrimental in exhibiting bistable conductive states in electrical bias as well.

Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random-aggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin-film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V_set =0.79 V and V_reset =-0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.

Surface Functionalization of Single-Layered Ti3C2Tx MXene and Its Application in Multilevel Resistive Memory

MXenes are a new type of two-dimensional material, and they have attracted extensive attention because of their outstanding conductivity and rich surface functional groups that make surface engineering easy and possible for adapting to diverse applications. However, there are scarce studies on surface engineering of MXene. Herein, we demonstrate for the first time that octylphosphonic acid-modified Ti₃C₂T_x MXene can be used as an active layer for memory devices and exhibits stable ternary memory behavior. Low threshold voltage, steady retention time, clearly distinguishable resistance states, high ON/OFF rate, OFF/ON1/ON2 = 1:10^2.7:10^4.1, and considerable ternary yield (58%) were obtained. In the proof of the mechanism, in situ conductive atomic force microscopy was conducted and the electrode-area relationship was analyzed to demonstrate that charge trapping and filament conduction are more suitable in the nonvolatile information memory of Ti₃C₂T_x-OP MXene devices. In addition, a polyethylene-terephthalate-based flexible Ti₃C₂T_x-OP memory device can maintain its stable ternary memory performance after being bent 5000 times. This work provides an easy method for surface modification of MXene and broadens the field of MXene.

Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage

Memcapacitors are emerging as an attractive candidate for high-density information storage due to their multilevel and adjustable capacitances and long-term retention without a power supply. However, knowledge of their memcapacitive mechanism remains unclear and accounts for the limited implementation of memcapacitors for multilevel memory technologies. Here, repeatable and reproducible quaternary memories fabricated from hybrid perovskite (CH₃ NH₃ SnBr₃ ) memcapacitors are reported. The device can be modulated to at least four capacitive states ranging from 0 to 169 pF with retention for 10⁴ s. Impressively, an effective device yield approaching 100% for quaternary memory switching is achieved by a batch of devices; each state has a sufficiently narrow distribution that can be distinguished from the others and is superior to most multilevel memories that have a low device yield as well as an overlapping distribution of states. The memcapacitive switching stems from the modulated p-i-n junction capacitance triggered by Br^- migration, as demonstrated by in situ element mapping, X-ray photoelectron spectra, and frequency-dependent capacitance measurements; this mechanism is different from the widely reported memristive switching involving filamentary conduction. The results provide a new way to produce high-density information storage through memcapacitors.

Metal-dependent photocatalytic activity and magnetic behaviour of a series of 3D Co–Ni metal organic frameworks

Mixed-metal systems in MOFs modulate their photocatalytic activity and magnetic behavior, which may open a new avenue for the preparation of functional materials with adjustable magnetic behaviors.

Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic-inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide-induced 2D (CH₃ NH₃ )₂ PbI₂ (SCN)₂ perovskite thin film is prepared by using a one-step solution method and fabricated into Al/perovskite film/indium-tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10³ :10⁷ , long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current-voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.

Poly(3,4-ethylenedioxythiophene)-Poly(styrenesulfonate) Interlayer Insertion Enables Organic Quaternary Memory

Herein, for the first time, quaternary resistive memory based on an organic molecule is achieved via surface engineering. A layer of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) was inserted between the indium tin oxide (ITO) electrode and the organic layer (squaraine, SA-Bu) to form an ITO/PEDOT-PSS/SA-Bu/Al architecture. The modified resistive random-access memory (RRAM) devices achieve quaternary memory switching with the highest yield (∼41%) to date. Surface morphology, crystallinity, and mosaicity of the deposited organic grains are greatly improved after insertion of a PEDOT-PSS interlayer, which provides better contacts at the grain boundaries as well as the electrode/active layer interface. The PEDOT-PSS interlayer also reduces the hole injection barrier from the electrode to the active layer. Thus, the threshold voltage of each switching is greatly reduced, allowing for more quaternary switching in a certain voltage window. Our results provide a simple yet powerful strategy as an alternative to molecular design to achieve organic quaternary resistive memory.