Highly Efficient Contact Doping for High-Performance Organic UV-Sensitive Phototransistors

Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with metal electrodes. Herein, we discovered that the molecular dopant of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was more efficient than the transition metal oxide dopant of MoO3 in doping a wide-bandgap OSC, although the former showed smaller electron affinity (EA). By efficient contact doping, a low Rc of 889 Ω·cm and a high mobility of 13.89 cm2V−1s−1 were achieved. As a result, UV-sensitive phototransistors showed high photosensitivity and responsivity.

Recent developments in the synthesis of chemically modified nanomaterials for use in dielectric and electronics applications

Polymer nanocomposites (PNC) have attracted enormous scientific and technological interest due to their applications in energy storage, electronics, biosensing, drug delivery, cosmetics and packaging industry. Nanomaterials (platelet, fibers, spheroids, whiskers, rods) dispersed in different types of polymer matrices constitute such PNC. The degree of dispersion of the inorganic nanomaterials in the polymer matrix, as well as the structured arrangement of the nanomaterials, are some of the key factors influencing the overall performance of the nanocomposite. To this end, the surface functionalization of the nanomaterials determines its state of dispersion within the polymer matrix. For energy storage and electronics, these nanomaterials are usually chosen for their dielectric properties for enhancing the performance of device applications. Although several reviews on surface modification of nanomaterials have been reported, a review on the surface functionalization of nanomaterials as it pertains to polymer dielectrics is currently lacking. This review summarizes the recent developments in the surface modification of important metal oxide dielectric nanomaterials including Silicon dioxide (SiO₂), titanium dioxide (TiO₂), barium titanate (BaTiO₃), and aluminum oxide (Al₂O₃) by chemical agents such as silanes, phosphonic acids, and dopamine. We report the impact of chemical modification of the nanomaterial on the dielectric performance (dielectric constant, breakdown strength, and energy density) of the nanocomposite. Aside from bringing novice and experts up to speed in the area of polymer dielectric nanocomposites, this review will serve as an intellectual resource in the selection of appropriate chemical agents for functionalizing nanomaterials for use in specific polymer matrix so as to potentially tune the final performance of nanocomposite.

Synthesis and Properties of Cyclopentyl Cardo-Type Polyimides Based on Dicyclopentadiene

A crucial polymer intermediate, 4-[1-(4-hydroxyphenyl)cyclopentyl]-phenol (bisphenol CP), was developed from dicyclopentadiene (DCPD), a key byproduct of the C5 fraction in petrochemicals. On the basis of bisphenol CP, a diamine, 4,4'-((cyclopentane-1,1-diylbis(4,1-phenylene))bis(oxy))-dianiline (cyclopentyl diamine; CPDA) was subsequently obtained through a nucleophilic substitution of bisphenol CP, followed by the hydrogenation process. By using the CPDA diamine, a series of polyimides with cyclopentyl (cardo) units on the backbone were prepared along with a reference polyimide (API-6F) based on 4,4'-(4,4'-(propane-2,2-diyl)bis(4,1-phenylene))bis(oxy)dianiline (BPAA), and 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride (6FDA) for the exploration of structure-properties relationship. Thanks to the presence of cyclopentyl units, this type of cardo polyimides exhibited comparable tensile properties, especially a large elongation (25.4%). It is also worth noting that CPI-6F exhibited better solubility in organic solvents, such as NMP, DMAc, THF, and chloroform, than the other PIs. Gas separation properties were also evaluated for these cardo-type polyimides.

Recent Progress in Aromatic Polyimide Dielectrics for Organic Electronic Devices and Circuits

Polymeric dielectrics play a key role in the realization of flexible organic electronics, especially for the fabrication of scalable device arrays and integrated circuits. Among a wide variety of polymeric dielectric materials, aromatic polyimides (PIs) are flexible, lightweight, and strongly resistant to high-temperature processing and corrosive etchants and, therefore, have become promising candidates as gate dielectrics with good feasibility in manufacturing organic electronic devices. More significantly, the characteristics of PIs can be conveniently modulated by the design of their chemical structures. Herein, from the perspective of structure optimization and interface engineering, a brief overview of recent progress in PI-based dielectrics for organic electronic devices and circuits is provided. Also, an outlook of future research directions and challenges for polyimide dielectric materials is presented.

Solution-Processable, Thin, and High-κ Dielectric Polyurea Gate Insulator with Strong Hydrogen Bonding for Low-Voltage Organic Thin-Film Transistors

We developed a solution-processable, thin, and high-dielectric polyurea-based organic gate insulator for low-voltage operation and high performance of organic thin-film transistors (OTFTs). A 60 nm-thick polyurea thin film exhibited a high dielectric constant of 5.82 and excellent electrical insulating properties owing to strong hydrogen bonding. The hydrogen bonding of the synthesized polyurea was confirmed using infrared spectroscopy and was quantitatively evaluated by measuring the interactive force using atomic force microscopy. Moreover, the effect of hydrogen bonding of polyurea on the insulating properties was systematically investigated through the combination of various monomers and control of the thickness of the polyurea film. The dinaphtho[2,3- b:2',3'- f]thieno[3,2- b]thiophene-based OTFTs with the polyurea gate insulator showed excellent thin-film transistor (TFT) performance with a field-effect mobility of 1.390 cm²/V·s and an on/off ratio of ∼10⁵ at a low operation voltage below 2 V. In addition, it is possible to fabricate flexible polymer organic semiconductor (OSC)-based TFT devices using a solution process, owing to excellent solvent stability in various organic solvents. We believe that the solution-processable polyurea gate insulator with a high dielectric constant and good insulation properties is a promising candidate for low-voltage-operated OTFTs using various OSCs.