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Fu Y, Chan YT, Jiang YP, Chang KH, Wu HC, Lai CS, Wang JC. Polarity-Differentiated Dielectric Materials in Monolayer Graphene Charge-Regulated Field-Effect Transistors for an Artificial Reflex Arc and Pain-Modulation System of the Spinal Cord. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202059. [PMID: 35619163 DOI: 10.1002/adma.202202059] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Revised: 04/28/2022] [Indexed: 06/15/2023]
Abstract
The nervous system is a vital part of organisms to survive and it endows them with remarkable abilities, such as perception, recognition, regulation, learning, and decision-making, by intertwining myriad neurons. To realize such outstanding efficacies and functions, many artificial devices and systems have been investigated to emulate the operating principles of the nervous system. Here, an artificial reflex arc (ARA) and artificial pain modulation system (APMS) are proposed to imitate the unconscious behaviors of the spinal cord. Gdx Oy - and Alx Oy -based charge-regulated field-effect transistors (CRFETs) with a monolayer graphene channel are fabricated and adopted as inhibitory and excitatory synapses, respectively, under the same pulse signals to mimic the biological reflex arc through a connection with a poly(vinylidene fluoride-co-trifluoroethylene)-based actuator. Additionally, a memristor is integrated with a CRFET as the interneuron to regulate the Dirac point by controlling the voltage drop on the graphene channel, analogous to the descending pain-inhibition system in the spinal cord, to prevent excessive pain perception. The proposed ARA and APMS provide a significant step forward to realizing the functions of the nervous system, giving promising potential for developing future intelligent alarm systems, neuroprosthetics, and neurorobotics.
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Affiliation(s)
- Yi Fu
- Department of Electronic Engineering, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
| | - Ya-Ting Chan
- Department of Electronic Engineering, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
| | - Yi-Pei Jiang
- Department of Electronic Engineering, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
| | - Kuo-Hsuan Chang
- Department of Neurology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, Taoyuan, 33305, Taiwan
- College of Medicine, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
| | - Hsiu-Chuan Wu
- Department of Neurology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, Taoyuan, 33305, Taiwan
- College of Medicine, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
- Green Technology Research Center, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
- Department of Nephrology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, Taoyuan, 33305, Taiwan
- Department of Materials Engineering, Ming Chi University of Technology, Taishan Dist, New Taipei City, 243303, Taiwan
| | - Jer-Chyi Wang
- Department of Electronic Engineering, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
- Green Technology Research Center, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan
- Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist, Taoyuan, 33305, Taiwan
- Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist, New Taipei City, 243303, Taiwan
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Shi L, Zheng G, Tian B, Dkhil B, Duan C. Research progress on solutions to the sneak path issue in memristor crossbar arrays. NANOSCALE ADVANCES 2020; 2:1811-1827. [PMID: 36132530 PMCID: PMC9418872 DOI: 10.1039/d0na00100g] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Accepted: 03/10/2020] [Indexed: 05/15/2023]
Abstract
Since the emergence of memristors (or memristive devices), how to integrate them into arrays has been widely investigated. After years of research, memristor crossbar arrays have been proposed and realized with potential applications in nonvolatile memory, logic and neuromorphic computing systems. Despite the promising prospects of memristor crossbar arrays, one of the main obstacles for their development is the so-called sneak-path current causing cross-talk interference between adjacent memory cells and thus may result in misinterpretation which greatly influences the operation of memristor crossbar arrays. Solving the sneak-path current issue, the power consumption of the array will immensely decrease, and the reliability and stability will simultaneously increase. In order to suppress the sneak-path current, various solutions have been provided. So far, some reviews have considered some of these solutions and established a sophisticated classification, including 1D1M, 1T1M, 1S1M (D: diode, M: memristor, T: transistor, S: selector), self-selective and self-rectifying memristors. Recently, a mass of studies have been additionally reported. This review thus attempts to provide a survey on these new findings, by highlighting the latest research progress realized for relieving the sneak-path issue. Here, we first present the concept of the sneak-path current issue and solutions proposed to solve it. Consequently, we select some typical and promising devices, and present their structures and properties in detail. Then, the latest research activities focusing on single-device structures are introduced taking into account the mechanisms underlying these devices. Finally, we summarize the properties and perspectives of these solutions.
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Affiliation(s)
- Lingyun Shi
- Department of Electronics, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University Shanghai 200241 China
| | - Guohao Zheng
- Department of Electronics, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University Shanghai 200241 China
| | - Bobo Tian
- Department of Electronics, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University Shanghai 200241 China
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay 91190 Gif-sur-Yvette France
| | - Brahim Dkhil
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay 91190 Gif-sur-Yvette France
| | - Chungang Duan
- Department of Electronics, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University Shanghai 200241 China
- Collaborative Innovation Center of Extreme Optics, Shanxi University Shanxi 030006 China
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