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Hou K, Yang C, Shi J, Kuang B, Tian B. Nano- and Microscale Optical and Electrical Biointerfaces and Their Relevance to Energy Research. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100165. [PMID: 34142435 DOI: 10.1002/smll.202100165] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2021] [Revised: 03/13/2021] [Indexed: 06/12/2023]
Abstract
Different research fields in energy sciences, such as photovoltaics for solar energy conversion, supercapacitors for energy storage, electrocatalysis for clean energy conversion technologies, and materials-bacterial hybrid for CO2 fixation have been under intense investigations over the past decade. In recent years, new platforms for biointerface designs have emerged from the energy conversion and storage principles. This paper reviews recent advances in nano- and microscale materials/devices for optical and electrical biointerfaces. First, a connection is drawn between biointerfaces and energy science, and how these two distinct research fields can be connected is summarized. Then, a brief overview of current available tools for biointerface studies is presented. Third, three representative biointerfaces are reviewed, including neural, cardiac, and bacterial biointerfaces, to show how to apply these tools and principles to biointerface design and research. Finally, two possible future research directions for nano- and microscale biointerfaces are proposed.
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Affiliation(s)
- Kun Hou
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Chuanwang Yang
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Jiuyun Shi
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Boya Kuang
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Bozhi Tian
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
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Roy A, Chen YP, Qiu JT, Maikap S. Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiO x Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire Structure. Anal Chem 2020; 92:8064-8071. [PMID: 32401013 DOI: 10.1021/acs.analchem.9b04745] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Sarcosine prostate cancer biomarker with the low concentration of 1 pM has been detected by controlling oxygen from 1 to 15 sccm in a NiOx membrane on chemically etched vertical Si nanowires (SiNWs) in an electrolyte-insulator-nanowire (EIN) structure. The vertical Si nanowires with approximately 17 μm length and polycrystalline NiOx membrane are observed by both field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM) images, respectively. The optimized NiOx membrane with oxygen content of 4 sccm on planar SiOx/Si substrate shows good pH sensitivity of approximately 50 mV/pH, low hysteresis of 3.4 mV, and low drift rate of 2.4 mV/h as compared to other oxygen content membranes of 1, 10, and 15 sccm. Further, uric acid with the concentration of 0.1 μM is detected directly by using the optimized NiOx membrane. In addition, repeatable H2O2 sensing with the low concentration of 10 pM as well as prostate cancer biomarker is detected, which is owing to the reduction-oxidation phenomena of the NiOx membranes. The sensing mechanism is owing to the Ni2+/Ni3+ oxidation states of the NiOx membrane, which is confirmed by X-ray photoelectron spectroscopy. The optimized NiOx membrane on vertical Si nanowire in the EIN structure shows a good drift rate of 3.84 mV/h and sarcosine detection with improvement of approximately 1000 times as compared to the planar Si in an electrolyte-insulator-semiconductor (EIS) structure. This sensor paves a way to detect early-stage diagnosis of prostate cancer rapidly in the near future.
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Affiliation(s)
- Anisha Roy
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa First Road, Kwei-Shan, Tao-Yuan, 33302, Taiwan
| | - Yi-Pin Chen
- Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital, No. 222, Maijin Road, Anle, Keelung, 204, Taiwan
| | - Jiantai Timothy Qiu
- Department of Obstetrics and Gynecology, College of Medicine, Taipei Medical University, No. 250, Wuxing Street, Xinyi, Taipei, 110, Taiwan.,Department of Obstetrics and Gynecology, Taipei Medical University Hospital, No. 252, Wuxing Street, Xinyi, Taipei, 110, Taiwan
| | - Siddheswar Maikap
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa First Road, Kwei-Shan, Tao-Yuan, 33302, Taiwan.,Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital, No. 222, Maijin Road, Anle, Keelung, 204, Taiwan.,Division of Gynecology-Oncology, Department of Obstetrics-Gynecology, Chang Gung Memorial Hospital, No. 5, Fuxing Street, Guishan, Taoyuan, 333, Taiwan
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Swaidan A, Addad A, Tahon JF, Barras A, Toufaily J, Hamieh T, Szunerits S, Boukherroub R. Ultrasmall CuS-BSA-Cu3(PO4)2 nanozyme for highly efficient colorimetric sensing of H2O2 and glucose in contact lens care solutions and human serum. Anal Chim Acta 2020; 1109:78-89. [DOI: 10.1016/j.aca.2020.02.064] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2019] [Revised: 02/07/2020] [Accepted: 02/28/2020] [Indexed: 01/04/2023]
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Qiu JT, Samanta S, Dutta M, Ginnaram S, Maikap S. Controlling Resistive Switching by Using an Optimized MoS 2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO x-Based RRAM. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:3897-3906. [PMID: 30791683 DOI: 10.1021/acs.langmuir.8b04090] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Controlled resistive switching by using an optimized 2 nm thick MoS2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO x-based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrO x/Al2O3/TaO x/MoS2/TiN structure. The pristine device including the IrO x TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.2 × 104, and a high nonlinearity factor >700 is obtained, greater than that of Pt and Ru TEs. After formation, this IrO x device produces bipolar resistive switching characteristics and a long program/erase (P/E) endurance >107 cycles at a low operation current of <50 μA with small pulse width of 100 ns. The stressed device shows a reduced Al2O3/TaO x interface from the HRTEM image, which is owing to O2- ions' migration toward TiN electrode. By adjusting the RESET voltage and current level, consecutive >100 complementary resistive switching as well as long P/E endurance of >106 cycles are obtained. Schottky barrier height modulation at a low field is observed owing to reduction-oxidation of the TE, which is evidenced through reversible AA detection. At a higher field, Fowler-Nordheim tunneling and hopping conduction are observed. Ascorbic acid detection with a low concentration of 1 pM by using a porous IrO x/Al2O3/TaO x/MoS2/TiN RRAM device directly is an additional novelty of this work, which will be useful in future for early diagnosis of scurvy.
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Affiliation(s)
- Jiantai Timothy Qiu
- Division of Gynecologic Oncology, Department of Obstetrics and Gynecology , Chang Gung Memorial Hospital (CGMH) , Linkou, Tao-Yuan 33302 , Taiwan
| | | | | | | | - Siddheswar Maikap
- Division of Gynecologic Oncology, Department of Obstetrics and Gynecology , Chang Gung Memorial Hospital (CGMH) , Linkou, Tao-Yuan 33302 , Taiwan
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Chakraborty P, Dhar S, Debnath K, Mondal SP. Glucose and hydrogen peroxide dual-mode electrochemical sensing using hydrothermally grown CuO nanorods. J Electroanal Chem (Lausanne) 2019. [DOI: 10.1016/j.jelechem.2018.11.060] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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Kim S, Chen J, Chen YC, Kim MH, Kim H, Kwon MW, Hwang S, Ismail M, Li Y, Miao XS, Chang YF, Park BG. Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching. NANOSCALE 2018; 11:237-245. [PMID: 30534752 DOI: 10.1039/c8nr06694a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
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Affiliation(s)
- Sungjun Kim
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
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Ma H, Wang W, Xu H, Wang Z, Tao Y, Chen P, Liu W, Zhang X, Ma J, Liu Y. Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2018; 10:21755-21763. [PMID: 29873232 DOI: 10.1021/acsami.8b07850] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory. A better understanding of the role of interface state in hybrid perovskite materials on RS behavior is essential for the development of practical devices. Here, we study the influence of interface state on the RS behavior of an Au/CH3NH3PbI3/FTO memory device using a simple air exposure method. We observe a transition of RS hysteresis behavior with exposure time. Initially no hysteresis is apparent, but air exposure induces bipolar RS and a negative differential resistance (NDR) phenomenon. The reductions of I/Pb atomic ratio and work function on the film surface are examined using XPS spectra and Kelvin probe technique, verifying the produce of donor-type interface states (e.g., iodine vacancies) during CH3NH3PbI3 film degradation. Studies on complex impedance spectroscopy confirm the responsibility of interface states in NDR behavior. Eventually, the trapping/detrapping of electrons in bulk defects and at interface states accounts for the bipolar RS behavior accompanied with the NDR effect.
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Affiliation(s)
- Hanlu Ma
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Wei Wang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Peng Chen
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Weizhen Liu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Xintong Zhang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Jiangang Ma
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
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Kim T, Baek G, Yang S, Yang JY, Yoon KS, Kim SG, Lee JY, Im HS, Hong JP. Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO x bipolar resistive switching. Sci Rep 2018; 8:8532. [PMID: 29867108 PMCID: PMC5986858 DOI: 10.1038/s41598-018-26997-y] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2017] [Accepted: 05/21/2018] [Indexed: 11/23/2022] Open
Abstract
Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5-x oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5-x and TaNx layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode's oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.
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Affiliation(s)
- Taeyoon Kim
- Novel Functional Materials and Devices Lab, The Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, South Korea
| | - Gwangho Baek
- Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04763, South Korea
| | - Seungmo Yang
- Novel Functional Materials and Devices Lab, The Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, South Korea
| | - Jung Yup Yang
- Department of Physics, Kunsan National University, Geonbuk, 54150, South Korea
| | - Kap Soo Yoon
- Novel Functional Materials and Devices Lab, The Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, South Korea
| | - Soo Gil Kim
- SK Hynix Semiconductor Inc., Icheon, 17336, South Korea
| | - Jae Yeon Lee
- SK Hynix Semiconductor Inc., Icheon, 17336, South Korea
| | - Hyun Sik Im
- Department of Semiconductor Science, Dongguk University, Seoul, 04620, South Korea
| | - Jin Pyo Hong
- Novel Functional Materials and Devices Lab, The Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, South Korea.
- Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04763, South Korea.
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