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Dou F, Zhao X, Gao M, He Z, Wang S, Liu H, Wang S, Wang C. Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites. MACROMOL CHEM PHYS 2022. [DOI: 10.1002/macp.202200104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Feng Dou
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Xiaofeng Zhao
- Heilongjiang Provincial Key Laboratory of Micro‐nano Sensitive Devices and Systems Heilongjiang University Harbin 150080 P. R. China
| | - Meng Gao
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Zhaohua He
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Shuao Wang
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Hanzhou Liu
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Shuhong Wang
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Cheng Wang
- School of Chemical Engineering and Materials Key Laboratory of Functional Inorganic Material Chemistry Ministry of Education Heilongjiang University Harbin 150080 P. R. China
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Patil H, Kim H, Rehman S, Kadam KD, Aziz J, Khan MF, Kim DK. Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:359. [PMID: 33535529 PMCID: PMC7912748 DOI: 10.3390/nano11020359] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Revised: 01/22/2021] [Accepted: 01/23/2021] [Indexed: 11/16/2022]
Abstract
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.
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Affiliation(s)
- Harshada Patil
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
- Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea
| | - Honggyun Kim
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
| | - Shania Rehman
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
| | - Kalyani D. Kadam
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
- Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea
| | - Jamal Aziz
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
- Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
| | - Deok-kee Kim
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea; (H.P.); (H.K.); (S.R.); (K.D.K.); (J.A.)
- Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea
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Gao S, Yi X, Shang J, Liu G, Li RW. Organic and hybrid resistive switching materials and devices. Chem Soc Rev 2019; 48:1531-1565. [DOI: 10.1039/c8cs00614h] [Citation(s) in RCA: 211] [Impact Index Per Article: 42.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.
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Affiliation(s)
- Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Xiaohui Yi
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Gang Liu
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
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Yang Y, Lu H, Liu J, Shen Y. Synthesis and binary/ternary write-once read-many-times electrical memory behaviors of carbazole-based polyimides bearing flexible linkage segment. Eur Polym J 2018. [DOI: 10.1016/j.eurpolymj.2018.08.009] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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