Modulation of the carrier mobility enhancement in Si/Ge core-shell nanowires under different interface confinements

Thickness-dependent photoelectric properties of MoS2/Si heterostructure solar cells

In order to obtain the optimal photoelectric properties of vertical stacked MoS₂/Si heterostructure solar cells, we propose a theoretical model to address the relationship among film thickness, atomic bond identities and related physical quantities in terms of bond relaxation mechanism and detailed balance principle. We find that the vertical stacked MoS₂/Si can form type II band alignment, and its photoelectric conversion efficiency (PCE) enhances with increasing MoS₂ thickness. Moreover, the optimal PCE in MoS₂/Si can reach 24.76%, inferring that a possible design way can be achieved based on the layered transition metal dichalcogenides and silicon.

Enlarged responsivity-ZnO honeycomb nanomaterials UV photodetectors with light trapping effect

The ability of ZnO photodetectors to absorb UV light plays a key role in enhancing responsivity and performance in electronic, optical, and photonic devices. Herein, the light trapping effect of ZnO is used to design and fabricate a novel honeycomb-like ZnO nanomaterial-based UV photodetector with an excellent photoelectric performance. Compared with the traditional ZnO film UV photodetector, the photoresponsivity of the film with honeycomb nanomaterials can reach up to 4.79 A W-1, which is an improvement of about 300 times. In addition, the honeycomb ZnO nanomaterials UV photodetectors exhibit an improved light absorption, a very photo-to-dark current ratio (2.46 × 103), and an excellent detectivity (4.61 × 1012 Jones). The ZnO honeycomb nanostructure synthesized in this work exhibits a strong trapping effect, providing new insights into the research of nanomaterials used for UV photodetectors.

Suppression of the Auger Recombination Process in CdSe/CdS Core/Shell Nanocrystals

We investigate the Auger recombination (AR) rate in CdSe/CdS core/shell nanocrystals (NCs) under different interface confinements in terms of the interface bond relaxation mechanism and Fermi's golden rule. We find that the epitaxial layer of CdS can not only depress the influence of the Coulomb interaction between electrons and holes, but can also change the wave function and quantum confinement, resulting in the reduction of the AR rate. Moreover, the AR lifetime of CdSe/CdS core/shell NCs at a fixed entire dimension is lower than that of bare CdSe because of interface confinement of the wave function. A great drop of the AR rate can be achieved by adding an alloying layer that depresses the interface effect. Our predictions are in agreement with the available evidence, suggesting that the proposed approach could provide a general method to explore the AR process in core/shell NCs.