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Lim KY, Kim DU, Kong JH, Choi BI, Seo WS, Yu JW, Choi WK. Ultralow Water Permeation Barrier Films of Triad a-SiN x:H/n-SiO xN y/h-SiO x Structure for Organic Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:32106-32118. [PMID: 32588616 DOI: 10.1021/acsami.0c05858] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic electronic devices such as organic light-emitting diodes (OLEDs), quantum dot LEDs, and organic photovoltaics are promising technologies for future electronics. However, achieving long-term stability of organic-based optoelectronic devices has been regarded as a crucial problem to be solved. In this work, a simple and reproducible fabrication method for ultralow water permeation barrier films having a triple-layered (triad) hydrogenated silicon nitride (a-SiNx:H)/nanosilicon oxynitride (n-SiOxNy)/hybrid silicon oxide (h-SiOx) multistructure is presented. Two triad (a-SiNx:H/n-SiOxNy/h-SiOx)n=2 multistructure barrier films are deposited on both sides of a poly(ethylene terephthalate) substrate using a combination of low-pressure plasma-enhanced chemical vapor deposition and dip coating. The deposited films show a high average transmittance (400-700 nm) of 84% and an ultralow water vapor transmission rate of 2 × 10-6 g/m2/day. In the electroluminescence characteristics of OLEDs encapsulated with two triad barrier films, the operational lifetime (T50) of OLEDs is 1584 h, which is almost similar to that (1416 h) of OLEDs encapsulated with a glass lid.
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Affiliation(s)
- Keun Yong Lim
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Deogyeong-daro 1732, Giheung-gu, Yongin, Gyeonggi 17104, Republic of Korea
| | - Dong Uk Kim
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Deogyeong-daro 1732, Giheung-gu, Yongin, Gyeonggi 17104, Republic of Korea
| | - Jun Ho Kong
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Deogyeong-daro 1732, Giheung-gu, Yongin, Gyeonggi 17104, Republic of Korea
| | - Byung-Il Choi
- Korea Research Institute of Standard and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Won-Seon Seo
- Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology (KICET), Soho-ro 101, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea
| | - Jae-Woong Yu
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Deogyeong-daro 1732, Giheung-gu, Yongin, Gyeonggi 17104, Republic of Korea
| | - Won Kook Choi
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea
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