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Roede ED, Shapovalov K, Moran TJ, Mosberg AB, Yan Z, Bourret E, Cano A, Huey BD, van Helvoort ATJ, Meier D. The Third Dimension of Ferroelectric Domain Walls. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202614. [PMID: 35820118 DOI: 10.1002/adma.202202614] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Revised: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. In this work, the importance of the nanoscale structure for the emergent transport properties is demonstrated, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO3 . By combining tomographic microscopy techniques and finite element modeling, the contribution of domain walls within the bulk is clarified and the significance of curvature effects for the local conduction is shown down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain-wall-based technology.
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Affiliation(s)
- Erik D Roede
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
| | - Konstantin Shapovalov
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Spain
| | - Thomas J Moran
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Aleksander B Mosberg
- Department of Physics, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
- SuperSTEM, STFC Daresbury Laboratories, Keckwick Lane, Warrington, WA4 4AD, UK
| | - Zewu Yan
- Department of Physics, ETH Zurich, Zürich, 8093, Switzerland
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Edith Bourret
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Andres Cano
- Universite Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Bryan D Huey
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | | | - Dennis Meier
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
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Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films. CRYSTALS 2020. [DOI: 10.3390/cryst10090804] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning of domain wall inclination with the applied voltage can be used in non-volatile memories, which store more than binary information. In this study, we present the realization of this concept for non-volatile memories. We obtain remarkably stable set voltages by the ferroelectric nature of the device as well as a very large increase in the conduction, by at least five orders of magnitude at room temperature. Furthermore, the device conductance can be reproducibly tuned over at least two orders of magnitude. The observed domain wall (DW) conductance tunability by the applied voltage can be correlated with phase-field simulated DW inclination evolution upon poling. Furthermore, evidence for polaron-based conduction is given.
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Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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