1
|
Li D, Lu H, Shi S, Zhao J. Highly sensitive plasmonic sensing based on a topological insulator nanoparticle. NANOSCALE 2023; 15:18300-18305. [PMID: 37916496 DOI: 10.1039/d3nr04741e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Topological insulators (TIs) are a new type of Dirac material that possess unique electrical and optical properties, enabling the generation of surface plasmons over an extensive spectral range with promising applications in functional devices. Herein, we fabricated antimony telluride (Sb2Te3) TI nanoparticles by using magnetron sputtering and focused ion beam (FIB) lithography techniques, and experimentally demonstrated high-performance refractive index nanosensing. We find that the Sb2Te3 TI nanoparticles can support the excitation of localized surface plasmon resonance (LSPR), which depends on the dimensions of the TI nanoparticle. TI-based LSPR can contribute to the nanoscale sensing of the surrounding refractive index with a high sensitivity of 443 nm RIU-1, which is comparable to that of plasmonic sensors based on metallic nanoparticles. The experimental results are in excellent agreement with finite-difference time-domain (FDTD) numerical simulations. This work will pave a new way to explore TI optical properties and applications in nanophotonic devices, especially plasmonic nanosensors.
Collapse
Affiliation(s)
- Dikun Li
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Hua Lu
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Shouhao Shi
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Jianlin Zhao
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| |
Collapse
|
2
|
Yang J, Li J, Bahrami A, Nasiri N, Lehmann S, Cichocka MO, Mukherjee S, Nielsch K. Wafer-Scale Growth of Sb 2Te 3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54034-54043. [PMID: 36383043 DOI: 10.1021/acsami.2c16150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 1014 Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.
Collapse
Affiliation(s)
- Jun Yang
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| | - Jianzhu Li
- School of Materials Science and Engineering, Harbin Institute of Technology (Weihai), West Road 2, Weihai, Shandong264209, China
| | - Amin Bahrami
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Noushin Nasiri
- School of Engineering, Faculty of Science and Engineering, Macquarie University, Sydney, New South Wales2109, Australia
| | - Sebastian Lehmann
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Magdalena Ola Cichocka
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Samik Mukherjee
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Kornelius Nielsch
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| |
Collapse
|
3
|
Yin H, Li H, Yu XX, Cao M. Design of Sb2Te3 nanoblades serialized by Te nanowires for a low-temperature near-infrared photodetector. Front Chem 2022; 10:1060523. [DOI: 10.3389/fchem.2022.1060523] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 10/21/2022] [Indexed: 11/21/2022] Open
Abstract
The dangling bond on the surface of bulk materials makes it difficult for a physically contacted heterojunction to form an ideal contact. Thus, periodic epitaxial junctions based on Sb2Te3 nanoblades serialized by Te nanowires (Sb2Te3/Te) were fabricated using a one-step hydrothermal epitaxial growth method. X-ray diffraction and electron microscopy reveal that the as-prepared product has a good crystal shape and heterojunction construction, which are beneficial for a fast photoresponse due to the efficient separation of photogenerated carriers. When the Sb2Te3/Te composite is denoted as a photodetector, it shows superior light response performance. Electrical analysis showed that the photocurrent of the as-fabricated device declined with temperatures rising from 10K to 300K at 980 nm. The responsivity and detectivity were 9.5 × 1011 μA W−1 and 1.22 × 1011 Jones at 50 K, respectively, which shows better detection performance than those of other Te-based photodetector devices. Results suggest that the as-constructed near-infrared photodetector may exhibit prospective application in low-temperature photodetector devices.
Collapse
|
4
|
Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
Collapse
Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| |
Collapse
|
5
|
Stoichiometric Growth of Monolayer FeSe Superconducting Films Using a Selenium Cracking Source. CRYSTALS 2022. [DOI: 10.3390/cryst12060853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
As a novel interfacial high-temperature superconductor, monolayer FeSe on SrTiO3 has been intensely studied in the past decade. The high selenium flux involved in the traditional growth method complicates the film’s composition and entails more sample processing to realize the superconductivity. Here we use a Se cracking source for the molecular beam epitaxy growth of FeSe films to boost the reactivity of the Se flux. Reflection high-energy electron diffraction shows that the growth rate of FeSe increases with the increasing Se flux when the Fe flux is fixed, indicating that the Se over-flux induces Fe vacancies. Through careful tuning, we find that the proper Se/Fe flux ratio with Se cracked that is required for growing stoichiometric FeSe is close to 1, much lower than that with the uncracked Se flux. Furthermore, the FeSe film produced by the optimized conditions shows high-temperature superconductivity in the transport measurements without any post-growth treatment. Our work reinforces the importance of stoichiometry for superconductivity and establishes a simpler and more efficient approach to fabricating monolayer FeSe superconducting films.
Collapse
|
6
|
Song L, Tang L, Hao Q, Yang C, Teng KS, Wang H, Yue B, Li J, Wei H. Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current. OPTICS EXPRESS 2022; 30:14828-14838. [PMID: 35473218 DOI: 10.1364/oe.454587] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Accepted: 03/29/2022] [Indexed: 06/14/2023]
Abstract
Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe), has been widely studied as a thermoelectric material. Furthermore, because of its narrow bandgap, it can be used as a novel infrared photodetector material. In this study, a large-area SnTe nanofilm with controllable thickness was deposited onto a quartz substrate using magnetron sputtering and was used to fabricate a photodetector. The device exhibited a photoelectric response over a broad spectral range of 400-1050 nm. In the near-infrared band of 940 nm, the detectivity (D*) and responsivity (R) of the photodetector were 3.46×1011 cmHz1/2w-1 and 1.71 A/W, respectively, at an optical power density of 0.2 mWcm-2. As the thickness of the SnTe nanofilm increased, a transition from semiconducting to metallic properties was experimentally observed for the first time. The large-area (2.5cm × 2.5cm) high-performance nanofilms show important potential for application in infrared focal plane array (FPA) detectors.
Collapse
|
7
|
Zhang X, Liu X, Zhang C, Peng S, Zhou H, He L, Gou J, Wang X, Wang J. Epitaxial Topological Insulator Bi 2Te 3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium. ACS NANO 2022; 16:4851-4860. [PMID: 35274530 DOI: 10.1021/acsnano.2c00435] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 1012 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.
Collapse
Affiliation(s)
- Xingchao Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xianchao Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chaoyi Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Silu Peng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hongxi Zhou
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Liang He
- National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun Gou
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xinran Wang
- National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| |
Collapse
|
8
|
Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 89] [Impact Index Per Article: 44.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
Collapse
Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
| |
Collapse
|
9
|
Zhang Y, Tang L, Teng KS. High performance broadband photodetectors based on Sb 2Te 3/n-Si heterostructure. NANOTECHNOLOGY 2020; 31:304002. [PMID: 32235040 DOI: 10.1088/1361-6528/ab851c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
With the rapid development of optoelectronic devices, photodetectors have triggered unprecedented promise in the field of optical communication, environmental monitoring, biological imaging, chemical sensing. At the same time, there is a higher requirement for photodetectors. It is still a huge challenge for photodetectors that possess excellent performance, low cost and broad range photoresponse from ultraviolet to infrared. In this work, a facile, low cost growth of Sb2Te3 thin film using magnetic sputtering was performed. After rapid annealing treatment, the crystallinity of the thin film was transformed from amorphous to polycrystalline. Ultraviolet-visible-infrared absorption study of the thin film revealed broad absorption range, which is ideal for use in broadband photodetectors. Such photodetectors can find many important applications in communication, data security, environmental monitoring and defense technology etc. A prototype photodetector, consisting of Sb2Te3/n-Si heterostructure, was produced and characterized. The device demonstrated a significant photoelectric response at a broad spectral range of between 250 and 2400 nm. The maximum responsivity and detectivity of the device were 270 A W-1 and 1.28 × 1013 Jones, respectively, under 2400 nm illumination. Therefore, the results showed the potential use of Sb2Te3 thin film in developing high performance broadband photodetectors.
Collapse
Affiliation(s)
- Yuping Zhang
- Kunming Institute of Physics, Kunming 650223, People's Republic of China. Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices, No.31 East Jiaochang Road, Kunming 650223, People's Republic of China
| | | | | |
Collapse
|
10
|
Salvato M, Scagliotti M, De Crescenzi M, Castrucci P, De Matteis F, Crivellari M, Pelli Cresi S, Catone D, Bauch T, Lombardi F. Stoichiometric Bi 2Se 3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications. NANOSCALE 2020; 12:12405-12415. [PMID: 32490504 DOI: 10.1039/d0nr02725a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at a temperature below 100 °C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films are analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectifying properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range.
Collapse
Affiliation(s)
- Matteo Salvato
- Dipartimento di Fisica, Università di Roma "Tor Vergata", 00133 Roma, Italy.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
11
|
Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
Collapse
Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | | |
Collapse
|
12
|
Yang J, Yu W, Pan Z, Yu Q, Yin Q, Guo L, Zhao Y, Sun T, Bao Q, Zhang K. Ultra-Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1802598. [PMID: 30126077 DOI: 10.1002/smll.201802598] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2018] [Revised: 07/26/2018] [Indexed: 06/08/2023]
Abstract
Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra-broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs-based photodetectors limits their further applications. In this regard, a high-performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid-IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as-grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W-1 at 254 nm, 49.03 A W-1 at 635 nm, 10.91 A W-1 at 1550 nm, and 4.17 A W-1 at 4650 nm) and an ultra-broad spectral response (254-4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices.
Collapse
Affiliation(s)
- Jie Yang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, Anhui, P. R. China
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| | - Wenzhi Yu
- Department of Materials Science and Engineering, and Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Zhenghui Pan
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| | - Qiang Yu
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| | - Qing Yin
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, Anhui, P. R. China
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| | - Lei Guo
- School of Physics, Southeast University, Nanjing, 211189, Jiangsu, P. R. China
| | - Yanfei Zhao
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| | - Tian Sun
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, P. R. China
| | - Qiaoliang Bao
- Department of Materials Science and Engineering, and Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Kai Zhang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, Anhui, P. R. China
- Key Lab of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, Jiangsu, P. R. China
| |
Collapse
|