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Li L, Dai T, Liu K, Chang KC, Zhang R, Lin X, Liu HJ, Lai YC, Kuo TP. Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation. NANOSCALE 2021; 13:14035-14040. [PMID: 34477684 DOI: 10.1039/d1nr03356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Complementary resistive switching (CRS) is a core requirement in memristor crossbar array construction for neuromorphic computing in view of its capability to avoid the sneak path current. However, previous approaches for implementing CRS are generally based on a complex device structure design and fabrication process or a meticulous current-limiting measurement procedure. In this study, a supercritical fluid-assisted ammoniation (SFA) process is reported to achieve CRS in a single device by endowing the original ordinary switching materials with dual-ion operation. In addition to self-compliant CRS behavior, a multi-bit storage function has also been achieved through the SFA process accompanied by superior retention and reliability. These substantial evolved resistive phenomena are elucidated attentively by our chemical reaction model and physical mechanism model corroborated by the material analysis and current conduction fitting analysis results. The findings in this research present the most efficient way to achieve CRS through only one chemical procedure with significantly improved device performance. Moreover, the supercritical fluid approach envisions tremendous possibilities for further development of materials and electric devices by a low-temperature process, with semiconductor fabrication compatibility and environmental friendliness.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China.
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Li L, Chang KC, Lin X, Lai YC, Zhang R, Kuo TP. Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process. NANOSCALE 2020; 12:15721-15724. [PMID: 32677652 DOI: 10.1039/d0nr04053c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This study investigates the physical and chemical mechanisms during the resistive switching process by means of obtaining the activation energy in the reaction procedure. From the electrochemical and electrical measurement analysis results of HfO2-based resistive random access memory (RRAM), it can be observed that the chemical reaction during the reset process is consistent with the first-order reaction law. The activation energy, Ea, is determined from the reaction rate constant k under a varying-temperature environment in the reset process. The whole reset chemical reaction process can be divided into five phases involving N-O bond breaking, O-O bond breaking and triple-step oxygen ion migration. The methodology of the activation energy determination carried out in this study showcases a distinct approach to elucidate the resistive switching mechanism of RRAM and offers insight into RRAM design for future potential application.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China. and Department of Materials Science and Engineering, Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan
| | - Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Xinnan Lin
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Ying-Chih Lai
- Department of Materials Science and Engineering, Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan
| | - Rui Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Tze-Peng Kuo
- Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan and Institute of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
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You T, Huang K, Zhao X, Yi A, Chen C, Ren W, Jin T, Lin J, Shuai Y, Luo W, Zhou M, Yu W, Ou X. Engineering of self-rectifying filamentary resistive switching in LiNbO 3 single crystalline thin film via strain doping. Sci Rep 2019; 9:19134. [PMID: 31836794 PMCID: PMC6911103 DOI: 10.1038/s41598-019-55628-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2019] [Accepted: 11/27/2019] [Indexed: 11/09/2022] Open
Abstract
The abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO3 (LNO) single crystalline thin films are fabricated on Pt/SiO2/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.
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Affiliation(s)
- Tiangui You
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Kai Huang
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Xiaomeng Zhao
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ailun Yi
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Chen Chen
- Department of Physics, Shanghai University, Shanghai, 200444, P. R. China
| | - Wei Ren
- Department of Physics, Shanghai University, Shanghai, 200444, P. R. China
| | - Tingting Jin
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Jiajie Lin
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Yao Shuai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Wenbo Luo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Min Zhou
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Wenjie Yu
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Xin Ou
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
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