Atomistic dynamics of sulfur-deficient high-symmetry grain boundaries in molybdenum disulfide

Electron irradiation effects in transmission electron microscopy: Random displacements and collective migrations

Electron beam damage in transmission electron microscopy (TEM) is complicated because the damage phenomena can be the result of random atomic displacements or collective migrations. The former is categorized as the primary beam effects and the latter is the secondary beam effects. The mechanisms for these two distinguishing atomic processes of damage are different. The primary beam effects can be caused by the mechanisms of knock-on and/or radiolysis, while the secondary effects must be driven by a field that is induced by electron irradiation. One such field has been identified to be the electric field produced by the accumulated charges due to the ejection of secondary and Auger electrons from the irradiated region. One convincing example is the electron irradiation-induced domain switch in ferroelectric materials, in which the collective cation displacements are driven by the induced electric field. A detailed interpretation is given in this review. The sintering of metal NPs under electron irradiation is a secondary beam effect and is most likely also caused by the induced electric fields. The interactions between the charged NP and substrate, and between charged NPs, result in NP motion. Interchanging atoms between NPs during the sintering may also be driven by the electric fields. Although many beam-damage phenomena in C nanotubes and layered materials, such as graphene, BN, and transition metal dichalcogenides, are caused by the primary beam effects and have been well studied experimentally and theoretically in the literature, some phenomena from the secondary beam effects have also been identified in this review. These phenomena are sensitive to electron current density, the shape and orientation of the specimen, and even the illumination mode (i.e., TEM or STEM). Unfortunately, the mechanisms responsible for these phenomena still need to be clarified.

Strain Characterization in Two-Dimensional Crystals

Two-dimensional (2D) crystals provides a material platform to explore the physics and chemistry at the single-atom scale, where surface characterization techniques can be applied straightforwardly. Recently there have been emerging interests in engineering materials through structural deformation or transformation. The strain field offers crucial information of lattice distortion and phase transformation in the native state or under external perturbation. Example problems with significance in science and engineering include the role of defects and dislocations in modulating material behaviors, and the process of fracture, where remarkable strain is built up in a local region, leading to the breakdown of materials. Strain is well defined in the continuum limit to measure the deformation, which can be alternatively calculated from the arrangement of atoms in discrete lattices through methods such as geometrical phase analysis from transmission electron imaging, bond distortion or virial stress from atomic structures obtained from molecular simulations. In this paper, we assess the accuracy of these methods in quantifying the strain field in 2D crystals through a number of examples, with a focus on their localized features at material imperfections. The sources of errors are discussed, providing a reference for reliable strain mapping.

Electron beam triggered single-atom dynamics in two-dimensional materials

Controlling atomic structure and dynamics with single-atom precision is the ultimate goal in nanoscience and nanotechnology. Despite great successes being achieved by scanning tunneling microscopy (STM) over the past a few decades, fundamental limitations, such as ultralow temperature, and low throughput, significantly hinder the fabrication of a large array of atomically defined structures by STM. The advent of aberration correction in scanning transmission electron microscopy (STEM) revolutionized the field of nanomaterials characterization pushing the detection limit down to single-atom sensitivity. The sub-angstrom focused electron beam (e-beam) of STEM is capable of interacting with an individual atom, thereby it is the ideal platform to direct and control matter at the level of a single atom or a small cluster. In this article, we discuss the transfer of energy and momentum from the incident e-beam to atoms and their subsequent potential dynamics under different e-beam conditions in 2D materials, particularly transition metal dichalcogenides (TMDs). Next, we systematically discuss the e-beam triggered structural evolutions of atomic defects, line defects, grain boundaries, and stacking faults in a few representative 2D materials. Their formation mechanisms, kinetic paths, and practical applications are comprehensively discussed. We show that desired structural evolution or atom-by-atom assembly can be precisely manipulated by e-beam irradiation which could introduce intriguing functionalities to 2D materials. In particular, we highlight the recent progress on controlling single Si atom migration in real-time on monolayer graphene along an extended path with high throughput in automated STEM. These results unprecedentedly demonstrate that single-atom dynamics can be realized by an atomically focused e-beam. With the burgeoning of artificial intelligence and big data, we can expect that fully automated microscopes with real-time data analysis and feedback could readily design and fabricate large scale nanostructures with unique functionalities in the near future.

Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces

The increasing scientific and industry interest in 2D MX₂ materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete understanding of vdW epitaxy still results in synthetic material that shows a crystallinity far too low compared to natural crystals that can be exfoliated onto commercial substrates. Thanks to its atomic control and in situ analysis possibilities, molecular beam epitaxy (MBE) offers a potential solution and an appropriate method to enable a more in-depth understanding of this peculiar 2D/3D hetero-epitaxy. Here, we report on how various sapphire surface reconstructions, that are obtained by thermal annealing of the as-received substrates, influence the vdW epitaxy of the MBE-grown WSe₂ monolayers (MLs). The surface chemistry and the interatomic arrangement of the reconstructed sapphire surfaces are shown to control the preferential in-plane epitaxial alignment of the stoichiometric WSe₂ crystals. In addition, it is demonstrated that the reconstructions also affect the in-plane lattice parameter and thus the in-plane strain of the 2D vdW-bonded MLs. Hence, the results obtained in this work shine more light on the peculiar concept of vdW epitaxy, especially relevant for 2D materials integration on large-scale 3D crystal commercial substrates.

Nature-Inspired 2D-Mosaic 3D-Gradient Mesoporous Framework: Bimetal Oxide Dual-Composite Strategy toward Ultrastable and High-Capacity Lithium Storage

In allusion to traditional transition-metal oxide (TMO) anodes for lithium-ion batteries, which face severe volume variation and poor conductivity, herein a bimetal oxide dual-composite strategy based on two-dimensional (2D)-mosaic three-dimensional (3D)-gradient design is proposed. Inspired by natural mosaic dominance phenomena, Zn_1-xCo_xO/ZnCo₂O₄ 2D-mosaic-hybrid mesoporous ultrathin nanosheets serve as building blocks to assemble into a 3D Zn-Co hierarchical framework. Moreover, a series of derivative frameworks with high evolution are controllably synthesized, based on which a facile one-pot synthesis process can be developed. From a component-composite perspective, both Zn_1-xCo_xO and ZnCo₂O₄ provide superior conductivity due to bimetal doping effect, which is verified by density functional theory calculations. From a structure-composite perspective, 2D-mosaic-hybrid mode gives rise to ladder-type buffering and electrochemical synergistic effect, thus realizing mutual stabilization and activation between the mosaic pair, especially for Zn_1-xCo_xO with higher capacity yet higher expansion. Moreover, the inside-out Zn-Co concentration gradient in 3D framework and rich oxygen vacancies further greatly enhance Li storage capability and stability. As a result, a high reversible capacity (1010 mA h g^-1) and areal capacity (1.48 mA h cm^-2) are attained, while ultrastable cyclability is obtained during high-rate and long-term cycles, rending great potential of our 2D-mosaic 3D-gradient design together with facile synthesis.

Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTe2

Studying the atomic structure of intrinsic defects in two-dimensional transition-metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this can also lead to insights into the creation of defects and their atom-scale dynamics. We first show that MoTe2 monolayers without protection indeed quickly degrade during scanning TEM (STEM) imaging, and discuss the observed atomic-level dynamics, including a transformation from the 1H phase into 1T', 3-fold rotationally symmetric defects, and the migration of line defects between two 1H grains with a 60° misorientation. We then analyze the atomic structure of MoTe2 encapsulated between two graphene sheets to mitigate damage, finding the as-prepared material to contain an unexpectedly large concentration of defects. These include similar point defects (or quantum dots, QDs) as those created in the nonencapsulated material and two different types of line defects (or quantum wires, QWs) that can be transformed from one to the other under electron irradiation. Our density functional theory simulations indicate that the QDs and QWs embedded in MoTe2 introduce new midgap states into the semiconducting material and may thus be used to control its electronic and optical properties. Finally, the edge of the encapsulated material appears amorphous, possibly due to the pressure caused by the encapsulation.