Scaling down contact length in complementary carbon nanotube field-effect transistors

Tailoring Multi-Walled Carbon Nanotubes into Graphene Quantum Sheets

Transformation of carbon nanotubes (CNTs) into sub-10 nm pieces is highly required but remains a great challenge. Herein, we report a robust strategy capable of mechanically tailoring pristine multi-walled carbon nanotubes (MWCNTs) into graphene quantum sheets (M-GQSs) with an extremely high yield of up to 44.6 wt %. The method combines silica-assisted ball-milling and sonication-assisted solvent exfoliation and therefore enables reproducible high-yield production of M-GQSs directly from MWCNTs. Remarkable solvent diversity and extraordinary solvability (up to 7 mg/mL) are demonstrated facilitating the solution processing of the M-GQSs. The M-GQSs are essentially monolayers with intrinsic curvature, which could be determinative to their outstanding performances in both dispersions and thin films. Besides the excitation wavelength-, concentration-, and solvent-dependent photoluminescence in dispersions, the solid-state fluorescence and exceptional nonlinear saturation absorption (NSA) in thin films are demonstrated. Particularly, NSA with relative modulation depth up to 46% and saturation intensity down to 1.53 MW/cm² are achieved in M-GQS/poly(methyl methacrylate) hybrid thin films with a loading content of merely 0.2 wt %. Our method opens up a new avenue toward conversion and utilization of CNTs.

Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances

The introduction of an appropriate functionality on the electrode/active layer interface has been found to be an efficient methodology to enhance the electrical performances of organic field-effect transistors (OFETs). Herein, we efficiently optimized the charge injection/extraction characteristics of source/drain (S/D) electrodes by applying an asymmetric functionalization at each individual electrode/organic semiconductor (OSC) interface. To further clarify the functionalizing effects of the electrode/OSC interface, we systematically designed five different OFETs: one with pristine S/D electrodes (denoted as pristine S/D) and the remaining ones made by symmetrically or asymmetrically functionalizing the S/D electrodes with up to two different self-assembled monolayers (SAMs) based on thiolated molecules, the strongly electron-donating thiophenol (TP) and electron-withdrawing 2,3,4,5-pentafluorobenzenethiol (PFBT). Both the S and D electrodes were functionalized with TP (denoted as TP-S/D) in one of the two symmetric cases and with PFBT in the other (PFBT-S/D). In each of the two asymmetric cases, one of the S/D electrodes was functionalized with TP and the other with PFBT (to produce PFBT-S/TP-D and TP-S/PFBT-D OFETs). The vapor-deposited p-type dinaphtho[2,3- b:2',3'- f]thieno[3,2- b]thiophene was used as the OSC active layer. The PFBT-S/TP-D case exhibited a field-effect mobility (μ_FET) of 0.86 ± 0.23 cm² V^-1 s^-1, about three times better than that of the pristine S/D case (0.31 ± 0.12 cm² V^-1 s^-1). On the other hand, the μ_FET of the TP-S/PFBT-D case (0.18 ± 0.10 cm² V^-1 s^-1) was significantly lower than that of the pristine case and even lower than those of the TP-S/D (0.23 ± 0.07 cm² V^-1 s^-1) and PFBT-S/D (0.58 ± 0.19 cm² V^-1 s^-1) cases. These results were clearly correlated with the additional hole density, surface potential, and effective work function. In addition, the contact resistance ( R_C) for the asymmetric PFBT-S/TP-D case was 10-fold less than that for the TP-S/PFBT-D case and more than five times lower than that for the pristine case. The results contribute a meaningful step forward in improving the electrical performances of various organic electronics such as OFETs, inverters, solar cells, and sensors.

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems

Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.