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Sun Y, Wei Y, Li M, Zhang Y, Li X, Fan L, Li Y. Wet Chemical Synthesis of Ultrathin γ-Ga 2O 3 Quantum Wires Enabling Far-UVC Photodetection with Ultrahigh Selectivity and Sensitivity. J Phys Chem Lett 2024; 15:4301-4310. [PMID: 38619156 DOI: 10.1021/acs.jpclett.4c00781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
As compared to solar-blind ultraviolet (UV) photodetectors (PDs), far-UVC PDs not only show some irreplaceable advantages but also are more challenging to be developed. To solve this challenge, we report herein a soft template-assisted solvothermal route to synthesize ultrathin γ-Ga2O3 quantum wires (UQWs) with diameters down to 1-2 nm. These UQWs all exhibit a cluster-like absorption feature with a strong peak located between 190 and 230 nm and an edge below 250 nm, allowing highly selective absorption to far-UVC light. Notably, their normalized absorption coefficients were experimentally and theoretically confirmed to increase obviously with decreasing their diameters. Self-powered photoelectrochemical-type PDs based on Ga2O3 QWs of 1.7 nm diameter were therefore fabricated, exhibiting an excellent far-UVC detection performance with an unprecedented ultrahigh spectral selectivity (R210 nm/R250 nm = 452). As a proof of concept, this paper offers a new idea for developing ultrawide bandgap semiconductor materials and devices by leveraging a strong quantum confinement effect.
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Affiliation(s)
- Yuzhuo Sun
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Ying Wei
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Mengwei Li
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Yang Zhang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Xiaohong Li
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Louzhen Fan
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Yunchao Li
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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Liu L, Bai B, Yang X, Du Z, Jia G. Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications. Chem Rev 2023; 123:3625-3692. [PMID: 36946890 DOI: 10.1021/acs.chemrev.2c00688] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2023]
Abstract
Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.
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Affiliation(s)
- Long Liu
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Bing Bai
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Zuliang Du
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Guohua Jia
- School of Molecular and Life Sciences, Curtin University, Perth, WA 6102, Australia
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Zhang J, Jiang M, Zhou M, Yang W, Zhao Y, Lu S. Self-powered (In,Ga)N-nanowire-based photodetector with fast response speed for under-seawater detection. OPTICS EXPRESS 2023; 31:8128-8138. [PMID: 36859929 DOI: 10.1364/oe.482370] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
Due to the requirements of oceanography exploration and detection, self-powered photodetectors (PDs) with low-power consumption are essential for the next-generation optoelectronic applications. In this work, we successfully demonstrate a self-powered photoelectrochemical (PEC) PD in seawater based on the (In,Ga)N/GaN core-shell heterojunction nanowires. Compared to those of the PD in pure water, it is found that the upward and downward overshooting features of current can be the key reason contributing to the much faster response speed of the PD in seawater. Thanks to the enhanced response speed, the rise time of PD can be reduced more than 80%, and the fall time remains only 30% by applying in seawater instead of pure water. The key factors of generating these overshooting features should be the instantaneous temperature gradient, carrier accumulation and elimination on the semiconductor/electrolyte interfaces at the moments of light on and off. By the analysis of experimental results, the Na+ and Cl- ions are proposed to be the main factors affecting the PD behavior in seawater, which can enhance the conductivity and accelerate the oxidation-reduction reaction significantly. This work paves an effective way to develop the new self-powered PDs for the wide applications in under-seawater detection and communication.
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Abstract
Nowadays, the emerging photoelectrochemical (PEC) bioanalysis has drawn intensive interest due to its numerous merits. As one of its core elements, functional nanostructured materials play a crucial role during the construction of PEC biosensors, which can not only be employed as transducers but also act as signal probes. Although both chemical composition and morphology control of nanostructured materials contribute to the excellent analytical performance of PEC bioassay, surveys addressing nanostructures with different dimensionality have rarely been reported. In this review, according to classification based on dimensionality, zero-dimensional, one-dimensional, two-dimensional, and three-dimensional nanostructures used in PEC bioanalysis are evaluated, with an emphasis on the effect of morphology on the detection performances. Furthermore, using the illustration of recent works, related novel PEC biosensing patterns with promising applications are also discussed. Finally, the current challenges and some future perspectives in this field are addressed based on our opinions.
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Wang D, Liu X, Fang S, Huang C, Kang Y, Yu H, Liu Z, Zhang H, Long R, Xiong Y, Lin Y, Yue Y, Ge B, Ng TK, Ooi BS, Mi Z, He JH, Sun H. Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection. NANO LETTERS 2021; 21:120-129. [PMID: 33320006 DOI: 10.1021/acs.nanolett.0c03357] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.
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Affiliation(s)
- Danhao Wang
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Xin Liu
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Chen Huang
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Yang Kang
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Huabin Yu
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Zhongling Liu
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Haochen Zhang
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Ran Long
- School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Yujie Xiong
- School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Yangjian Lin
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230029, P.R. China
| | - Yang Yue
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230029, P.R. China
| | - Binghui Ge
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230029, P.R. China
| | - Tien Khee Ng
- Computer, Electrical, and Mathematical Sciences, and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Boon S Ooi
- Computer, Electrical, and Mathematical Sciences, and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Zetian Mi
- Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P.R. China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China
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Memela M, Feleni U, Mdluli S, Ramoroka ME, Ekwere P, Douman S, Iwuoha E. Electro‐photovoltaics of Polymer‐stabilized Copper–Indium Selenide Quantum Dot. ELECTROANAL 2020. [DOI: 10.1002/elan.202060392] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Muziwenkosi Memela
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
| | - Usisipho Feleni
- Institute for Nanotechnology and Water Sustainability (iNanoWS), College of Science, Engineering and Technology University of South Africa P/Bag X6 Florida Campus 1710, Roodepoort Johannesburg South Africa
| | - Siyabonga Mdluli
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
| | - Morongwa E. Ramoroka
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
| | - Precious Ekwere
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
| | - Samantha Douman
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
| | - Emmanuel Iwuoha
- SensorLab University of the Western Cape Sensor Laboratories Robert Sobukwe Road Bellville 7535 Cape Town South Africa
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Wang G, Wei H, Tian Y, Wu M, Sun Q, Peng Z, Sun L, Liu M. Twin-ZnSe nanowires as surface enhanced Raman scattering substrate with significant enhancement factor upon defect. OPTICS EXPRESS 2020; 28:18843-18858. [PMID: 32672175 DOI: 10.1364/oe.388439] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 04/26/2020] [Indexed: 05/26/2023]
Abstract
Semiconductor-based surface enhanced Raman scattering (SERS) substrate design has attracted much interest due to the excellent photoelectronic and biochemical properties. The structural change caused by twin in semiconductor will have an influence on improving the Raman signals enhancement based on the chemical mechanism (CM). Here, we demonstrated the twin in semiconductor ZnSe nanowires as an ultrasensitive CM-based SERS platform. The SERS signals of the rhodamine 6G (R6G) and crystal violet (CV) molecules adsorbed on twin-ZnSe nanowires could be easily detected even with an ultralow concentration of 10-11 M and 10-8 M, respectively, and the corresponding enhancement factor (EF) were up to 6.12 × 107 and 3.02 × 105, respectively. In addition, the charge transfer (CT) between the twin-ZnSe nanowires and R6G molecule has been demonstrated theoretically with first-principles calculations based on density-functional theory (DFT). These results demonstrated the proposed ZnSe nanowires with twin as SERS substrate has a broader application in the field of biochemical sensing.
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Chen D, Wang A, Buntine MA, Jia G. Recent Advances in Zinc‐Containing Colloidal Semiconductor Nanocrystals for Optoelectronic and Energy Conversion Applications. ChemElectroChem 2019. [DOI: 10.1002/celc.201900838] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Dechao Chen
- Curtin Institute of Functional Molecules and Interfaces School of Molecular and Life Sciences Curtin University WA-6845 Perth Australia
| | - Aixiang Wang
- School of Chemistry and Chemical Engineering Linyi University Linyi 276005 China
| | - Mark A. Buntine
- Curtin Institute of Functional Molecules and Interfaces School of Molecular and Life Sciences Curtin University WA-6845 Perth Australia
| | - Guohua Jia
- Curtin Institute of Functional Molecules and Interfaces School of Molecular and Life Sciences Curtin University WA-6845 Perth Australia
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Li D, Hao S, Xing G, Li Y, Li X, Fan L, Yang S. Solution Grown Single-Unit-Cell Quantum Wires Affording Self-Powered Solar-Blind UV Photodetectors with Ultrahigh Selectivity and Sensitivity. J Am Chem Soc 2019; 141:3480-3488. [PMID: 30714725 DOI: 10.1021/jacs.8b10791] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
As crystalline semiconductor nanowires are thinned down to a single-unit-cell thickness, many fascinating properties could arise pointing to promising applications in various fields. A grand challenge is to be able to controllably synthesize such ultrathin nanowires. Herein, we report a strategy, which synergizes a soft template with oriented attachment (ST-OA), to prepare high-quality single-unit-cell semiconductor nanowires (SSNWs). Using this protocol, we are able to synthesize for the first time ZnS and ZnSe nanowires (NWs) with only a single-unit-cell thickness (less than 1.0 nm) and a cluster-like absorption feature (i.e., with a sharp, strong, and significantly blue-shifted absorption peak). Particularly, the growth mechanism and the single-unit-cell structure of the as-prepared ZnS SSNWs are firmly established by both experimental observations and theoretical calculations. Thanks to falling into the extreme quantum confinement regime, these NWs are found to only absorb the light with wavelengths shorter than 280 nm (i.e., solar-blind UV absorption). Utilizing such a unique property, self-powered photoelectrochemical-type photodetectors (PEC PDs) based on the ZnS SSNWs are successfully fabricated. The PDs after interface modification with TiO2 exhibit an excellent solar-blind UV photoresponse performance, with a typical on/off ratio of 6008, a detectivity of 1.5 × 1012 Jones, and a responsivity of 33.7 mA/W. This work opens the door to synthesizing and investigating a new dimension of nanomaterials with a wide range of applications.
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Affiliation(s)
- Dong Li
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Simeng Hao
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Guanjie Xing
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Yunchao Li
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Xiaohong Li
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Louzhen Fan
- College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Shihe Yang
- Guangdong Key Lab of Nano-Micro Material Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School , Peking University , Shenzhen 518055 , China
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Diameter- and Length-controlled Synthesis of Ultrathin ZnS Nanowires and Their Size-Dependent UV Absorption Properties, Photocatalytical Activities and Band-Edge Energy Levels. NANOMATERIALS 2019; 9:nano9020220. [PMID: 30736439 PMCID: PMC6409554 DOI: 10.3390/nano9020220] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2018] [Revised: 01/29/2019] [Accepted: 02/04/2019] [Indexed: 01/16/2023]
Abstract
Benefiting from their ultra-small diameters and highly structural anisotropies, ultrathin semiconductor nanowires (USNWs) are well-known for their fascinating physical/chemical properties, as well as their promising applications in various fields. However, until now, it remains a challenge to synthesize high-quality USNWs with well-controlled diameters and lengths, let alone the exploration of their size-dependent properties and applications. To solve such a challenge, we report herein a ligand-induced low-temperature precursor thermolysis route for the controlled preparation of ultrathin ZnS nanowires, which is based on the oriented assembly of the in-situ formed ZnS clusters/tiny particles. Optimized synthetic conditions allowed the synthesis of ZnS nanowires with a diameter down to 1.0 nm and a length approaching 330 nm. The as-prepared ultrathin ZnS nanowires were then intensively examined by morphological, spectroscopic and electrochemical analytical means to explore their size-dependent optical absorption properties, photocatalytic activities and band-edge energy levels, as well as their underlying growth mechanism. Notably, these USNWs, especially for the thinnest nanowires, were identified to possess an excellent performance in both the selective absorption of ultraviolet (UV) light and photocatalytic degradation of dyes, thus enabling them to serve as longpass ultraviolet filters and high-efficiency photocatalysts, respectively. For the ultrathin ZnS nanowires with a diameter of 1.0 nm, it was also interesting to observe that their exciton absorption peak positions were kept almost unchanged during the continuous extension of their lengths, which has not been reported previously.
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