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Noh S, Shin J, Yu YT, Ryu MY, Kim JS. Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13020358. [PMID: 36678111 PMCID: PMC9861914 DOI: 10.3390/nano13020358] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/11/2023] [Accepted: 01/13/2023] [Indexed: 06/01/2023]
Abstract
We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm2 at -1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at -0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.
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Affiliation(s)
- Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Mee-Yi Ryu
- Department of Physics, Kangwon National University, Chuncheon 24341, Republic of Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
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Preparation and enhanced photocatalytic properties of the large-area transferred mesoporous InGaN-based MQWs with mesoporous GaN reflectors. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.130158] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Gong Z. Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:842. [PMID: 33806237 PMCID: PMC8065746 DOI: 10.3390/nano11040842] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 03/16/2021] [Accepted: 03/22/2021] [Indexed: 02/07/2023]
Abstract
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
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Affiliation(s)
- Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China;
- Foshan Debao Display Technology Co Ltd., Room 508-1, Level 5, Block A, Golden Valley Optoelectronics, Nanhai District, Foshan 528200, China
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Cao D, Wang B, Lu D, Zhou X, Ma X. Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films. Sci Rep 2020; 10:20564. [PMID: 33239693 PMCID: PMC7688937 DOI: 10.1038/s41598-020-77651-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Accepted: 11/12/2020] [Indexed: 11/16/2022] Open
Abstract
Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.
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Affiliation(s)
- Dezhong Cao
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, People's Republic of China. .,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronic, Xidian University, Xi'an, 710126, People's Republic of China.
| | - Bo Wang
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, People's Republic of China
| | - Dingze Lu
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, People's Republic of China
| | - Xiaowei Zhou
- Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronic, Xidian University, Xi'an, 710126, People's Republic of China
| | - Xiaohua Ma
- Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronic, Xidian University, Xi'an, 710126, People's Republic of China.
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Su X, Li Y, Zhang M, Hu P, Tian Z, Guo M, Zhang Y, Yun F. Performance improvement of ultraviolet-A multiple quantum wells using a vertical oriented nanoporous GaN underlayer. NANOTECHNOLOGY 2020; 31:445202. [PMID: 32674092 DOI: 10.1088/1361-6528/aba6b0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Well-aligned, lateral and vertical oriented nanoporous GaN was fabricated using the electrochemical etching procedure and its influence on the optical characteristics of ultraviolet-A multiple quantum well (MQW) structure was investigated. We used a MQW structure with a V-defect and n-Al0.1Ga0.9 N layer, which greatly improved the uniformity of vertical electrochemical etching. Compared to the as-grown MQW structure, the lateral and vertical oriented nanoporous MQW structures have 3.8-fold and 8.1-fold photoluminescence intensity enhancement and the full width at half maximum has been narrowed from 18.4 nm to 7.9 nm and 2.8 nm, respectively. The vertical oriented nanoporous MQW structure has a rectangular far-field emission pattern with uniform forward light distribution and the view angle of 85% intensity is 50°. This study provides an effective method for improving the light output and controlling the emission angle of GaN based light emitting devices, as well as a method for preparing well-aligned nanopores in semiconductors.
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Affiliation(s)
- Xilin Su
- Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049 People's Republic of China. Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 People's Republic of China
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Kimura T, Sato S, Kataoka K, Morikawa T, Nakamura D. Self-Assembled Single-Crystalline GaN Having a Bimodal Meso/Macropore Structure To Enhance Photoabsorption and Photocatalytic Reactions. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4233-4241. [PMID: 30608116 DOI: 10.1021/acsami.8b18088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
This paper describes the self-assembled fabrication of single-crystal GaN with a bimodal pore (meso/macropore) size distribution (BiPS-GaN). A 4.7 μm-thick BiPS-GaN layer was grown spontaneously using halogen-free vapor phase epitaxy in conjunction with boron impurity doping (>1 × 1019 atoms/cm3) on a GaN template fabricated via metalorganic chemical vapor deposition (MOCVD-GaN). The boron impurity acted as a surfactant, and its segregation generated a dense (>1 × 1010 cm-2), homogeneous distribution of mesopores with sizes of 30-40 nm in GaN during growth. In addition, macropores with sizes of 0.1-2 μm were produced by the fusion of mesopores in close proximity to one another. As a result, BiPS-GaN exhibited a high density of both meso- and macropores, all aligned in the vertical direction (that is, along the c axis). BiPS-GaN showed good electroconductivity and almost the same high degree of crystallinity as the MOCVD-GaN template. Furthermore, the hybrid meso/macropore structure of BiPS-GaN imparted excellent photoabsorption properties and allowed this material to work as an efficient support for a nanosized IrO x catalyst. The photocurrent density in BiPS-GaN was enhanced by as much as a factor of 5 compared to planar GaN by effective absorption due to the hybrid meso/macropore structure of BiPS-GaN. Moreover, the oxygen generation efficiency of BiPS-GaN with the IrO x catalyst was approximately doubled, compared to that of BiPS-GaN without IrO x, while maintaining long-term stability. These results demonstrate that BiPS-GaN fabricated in this facile manner has significant potential in applications such as photoelectrochemical reactions and catalysis.
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Affiliation(s)
- Taishi Kimura
- Toyota Central R&D Labs., Inc. , Nagakute , Aichi 480-1192 , Japan
| | - Shunsuke Sato
- Toyota Central R&D Labs., Inc. , Nagakute , Aichi 480-1192 , Japan
| | - Keita Kataoka
- Toyota Central R&D Labs., Inc. , Nagakute , Aichi 480-1192 , Japan
| | - Takeshi Morikawa
- Toyota Central R&D Labs., Inc. , Nagakute , Aichi 480-1192 , Japan
| | - Daisuke Nakamura
- Toyota Central R&D Labs., Inc. , Nagakute , Aichi 480-1192 , Japan
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ElAfandy RT, Ebaid M, Min JW, Zhao C, Ng TK, Ooi BS. Flexible InGaN nanowire membranes for enhanced solar water splitting. OPTICS EXPRESS 2018; 26:A640-A650. [PMID: 30114053 DOI: 10.1364/oe.26.00a640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2018] [Accepted: 05/21/2018] [Indexed: 06/08/2023]
Abstract
III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.
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