Nanoelectromagnetic of the N-doped single wall carbon nanotube in the extremely high frequency band

Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices

We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I _on /I _off ratio of 10⁴ and a maximum on-state current (I _on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm² V^-1 s^-1. Finally, under light illumination, the transfer characteristics (i.e. I _DS as a function of V _GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.

Highly Efficient and Reliable Transparent Electromagnetic Interference Shielding Film

Electromagnetic protection in optoelectronic instruments such as optical windows and electronic displays is challenging because of the essential requirements of a high optical transmittance and an electromagnetic interference (EMI) shielding effectiveness (SE). Herein, we demonstrate the creation of an efficient transparent EMI shielding film that is composed of calcium alginate (CA), silver nanowires (AgNWs), and polyurethane (PU), via a facile and low-cost Mayer-rod coating method. The CA/AgNW/PU film with a high optical transmittance of 92% achieves an EMI SE of 20.7 dB, which meets the requirements for commercial shielding applications. A superior EMI SE of 31.3 dB could be achieved, whereas the transparent film still maintains a transmittance of 81%. The integrated efficient EMI SE and high transmittance are superior to those of most previously reported transparent EMI shielding materials. Moreover, our transparent films exhibit a highly reliable shielding ability in a complex service environment, with 98 and 96% EMI SE retentions even after 30 min of ultrasound treatment and 5000 bending cycles (1.5 mm radius), respectively. The comprehensive performance that is associated with the facile fabrication strategy imparts the CA/AgNW/PU film with great potential as an optimized EMI shielding material in emerging optoelectronic devices, such as flexible solar cells, displays, and touch panels.