Defect induced p-type conductivity in zinc oxide at high temperature: electron paramagnetic resonance spectroscopy

Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol-Gel Synthesis: Mechanistic Insights into Zinc Vacancies

The synthesis and control of properties of p-type ZnO is crucial for a variety of optoelectronic and spintronic applications; however, it remains challenging due to the control of intrinsic midgap (defect) states. In this study, we demonstrate a synthetic route to yield colloidal ZnO quantum dots (QD) via an enhanced sol-gel process that effectively eliminates the residual intermediate reaction molecules, which would otherwise weaken the excitonic emission. This process supports the creation of ZnO with p-type properties or compensation of inherited n-type defects, primarily due to zinc vacancies under oxygen-rich conditions. The in-depth analysis of carrier recombination in the midgap across several time scales reveals microsecond carrier lifetimes at room temperature which are expected to occur via zinc vacancy defects, supporting the promoted p-type character of the synthesized ZnO QDs.

About defect phenomena in ZnO nanocrystals

ZnO nanocrystals are receiving renewed attraction due to their multifunctional properties. Selective enhancement and tuning of their optical and electrical properties are essential for achieving novel devices with accurate sensing and conducting capabilities. The nature and type of intrinsic defects that occur in ZnO influence these properties. In this work, we investigate the intrinsic defect structure of ZnO via electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy and correlate the results with existing computational works. Mainly, the defects are analysed by taking the microscopic defect structure of the lattice into account. The results manifest the core-shell model of the defect structure in ZnO. By default, specifically for nanocrystals, oxygen vacancies localise on the surface, while zinc vacancies localise in the core. The investigations in this report demonstrate that the concentration of the intrinsic defects and their position can be tuned merely by changing the size of the nanocrystal. Additionally, the UV, green, orange and red emissions can be tuned by nanocrystal's size and post-annealing treatments.

Synergy of nano-ZnO and 3D-graphene foam electrodes for asymmetric supercapacitor devices

Two kinds of electrode materials were produced to fabricate asymmetric supercapacitor devices: (i) Highly defective, n-type wide bandgap semiconductor ZnO nanocrystalline electrodes below 50 nm were synthesized with the aid of the high energy ball milling technique. (ii) Flexible 3D-graphene foams were synthesized via the chemical vapor deposition technique. Extensive defect structure analysis was performed via enhanced characterization techniques mainly the spectroscopy ones: electron paramagnetic resonance (EPR), Raman, and photoluminescence (PL). Compared to bulk ZnO electrodes the nanoscale ZnO electrodes revealed a dramatic increase of defect concentration. The surface defect plays a crucial role in the electrochemical performance of supercapacitor devices. Strong decreases in charge transfer resistance were observed for the smallest crystallite size which is 15 nm. This work also shows that synthesis, controlling the defect structures, electronic and electrical characterization and the device production are extremely important to obtain high performance faradaic asymmetric supercapacitors.

Electron paramagnetic resonance and microstructural insights into the thermal behavior of simonkolleite nanoplatelets

The thermal decomposition process of simonkolleite, at 500 °C was monitored by EPR and electron microscopy. The experimental data indicate that after an 1 h at 500 °C, three morphologies can be observed from the thermal decomposition of ZHC.

Lattice defect-formulated ferromagnetism and UV photo-response in pure and Nd, Sm substituted ZnO thin films

The induction of charge and spin in diluted magnetic semiconductor ZnO is explored for spintronic devices and its wide direct band gap (3.37 eV) and large exciton binding energy (60 meV) exhibit potential in UV photodetectors. We reported the ferromagnetic and optical properties of pure ZnO, Zn_0.97Nd_0.03O and Zn_0.97Sm_0.03O thin films. These thin films were synthesized by a metallo-organic decomposition method and annealed at 500 °C for 7 h. Rietveld refinement of the XRD data results in a wurtzite ZnO structure with Nd, Sm doping. The dopants and nanoparticle size are responsible for wurtzite structural deformation, inducing lattice strain effect, which may influence the band gap energy and high-T_C ferromagnetism of ZnO. The average size of ZnO nanoparticles with Nd, Sm doping is 10 nm, confirmed with atomic force microscopy. The Raman spectra confirm the wurtzite structure of ZnO with crystalline quality and lattice defect formation with dopant Nd, Sm ions. A near-band-edge emission due to band gap energy is evaluated with photoluminescence spectra, which also involved multiple visible emissions due to oxygen vacancies. The oxygen vacancies-mediated magnetic interactions impart room temperature ferromagnetism in pure ZnO which is enhanced with Nd, Sm doping. The electron paramagnetic resonance spectra revealed the effects of defects and unpaired electrons responsible for observed room temperature ferromagnetism. The zero field cooling and field cooling magnetic measurements include antiferromagnetic interactions without any spin-glass formation. The observed ferromagnetism also correlates with first principle calculations reported for Nd, Sm-doped ZnO and suggests long-range ferromagnetic ordering attributed to defect carriers. The Nd, Sm doping into ZnO thin films significantly enhances absorption in the UV region and suggests its usability for UV detectors. Under UV irradiation (λ = 325 nm), the value of photocurrent in Nd, Sm:ZnO thin films is highly enhanced for possible use in UV sensors.

Realization of Lasing Emission from One Step Fabricated WSe₂ Quantum Dots

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) quantum dots (QDs) are the vanguard due to their unique properties. In this work, WSe₂ QDs were fabricated via one step ultrasonic probe sonication. Excitation wavelength dependent photoluminescence (PL) is observed from WSe₂ QDs. Room-temperature lasing emission which benefits from 3.7 times enhancement of PL intensity by thermal treatment at ~470 nm was achieved with an excitation threshold value of ~3.5 kW/cm² in a Fabry⁻Perot laser cavity. To the best of our knowledge, this is the first demonstration of lasing emission from TMDCs QDs. This indicates that TMDCs QDs are a superior candidate as a new type of laser gain medium.