Size-dependent donor and acceptor states in codoped Si nanocrystals studied by scanning tunneling spectroscopy

Application of Scanning Tunneling Microscopy and Spectroscopy in the Studies of Colloidal Quantum Qots

Colloidal quantum dots display remarkable optical and electrical characteristics with the potential for extensive applications in contemporary nanotechnology. As an ideal instrument for examining surface topography and local density of states (LDOS) at an atomic scale, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) has become indispensable approaches to gain better understanding of their physical properties. This article presents a comprehensive review of the research advancements in measuring the electronic orbits and corresponding energy levels of colloidal quantum dots in various systems using STM and STS. The first three sections introduce the basic principles of colloidal quantum dots synthesis and the fundamental methodology of STM research on quantum dots. The fourth section explores the latest progress in the application of STM for colloidal quantum dot studies. Finally, a summary and prospective is presented.

Electrical and chemical properties of vacancy-ordered lead free layered double perovskite nanoparticles

In this work we synthesized vacancy-ordered lead-free layered double perovskite (LDP) nanoparticles. This structure consists of two layers of trivalent metal halide octahedra [B(III)X₆]^3- separated by a layer of divalent metal [B(II)X₆]^4- (B is a divalent or trivalent metal). The chemical formula of this structure is based on A₄B(II)B(III)₂X₁₂ where A is Cs, B(III) is Bi, X is Cl and B(II) is a different ratio between Mn²⁺ and Cd²⁺. Well-defined colloidal nanoplates of Cs₄Cd_xMn_1-xBi₂Cl₁₂ were successfully synthesized. These nanoplates show photoluminescence (PL) in the orange to red region that can be tuned by changing the Cd/Mn ratio. High resolution scanning transmission electron microscopy (HR-STEM) and atomic resolution elemental analysis were performed on these lead free LDP nanoplates revealing two different particle compositions that can be controlled by the Cd/Mn ratio. Ultraviolet Photoelectron Spectroscopy (UPS) and scanning tunneling spectroscopy (STS) reveal the band gap structure of these LDP nanoplates. Density functional theory (DFT) calculations show the existence of [MnCl₆]^4- in-gap states. While the absorption occurs from the valence band maximum (VBM) to the conduction band minimum (CBM), the emission may occur from the CBM to an in-gap band maximum (IGM), which could explain the PL in the orange to red region of these nanoplates. This work provides a detailed picture of the chemical and electronic properties of LDP nanoparticles.

Solution-processed silicon quantum dot photocathode for hydrogen evolution

The photoelectrochemical response of a photocathode made from a colloidal solution of boron (B) and phosphorus (P) codoped silicon (Si) quantum dots (QDs) 2-11 nm in diameters is studied. Since codoped Si QDs are dispersible in alcohol and water due to the hydrophilic surface, a photoelectrode with a smooth surface is produced by drop-coating the QD solution on an indium tin oxide substrate. The codoping provides high oxidation resistance to Si QDs and makes the electrode operate as a photocathode. The photoelectrochemical response of a Si QD photoelectrode depends strongly on the size of QDs; there is a transition from anodic to cathodic photocurrent around 4 nm in diameter. Below the size, anodic photocurrent due to self-oxidation of Si QDs is observed, while above the size, cathodic photocurrent due to electron transfer across the interface is observed. The cathodic photocurrent increases with increasing the size, and in some samples, it is observed for more than 3000 s under intermittent light irradiation.

Single-charge transport through hybrid core-shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

We examined the modified electronic structure and single-carrier transport of individual hybrid core-shell metal-semiconductor Au-ZnS quantum dots (QDs) using a scanning tunnelling microscope. Nearly monodisperse ultra-small QDs are achieved by a facile wet chemical route. The exact energy structures are evaluated by scanning tunnelling spectroscopy (STS) measurements at 300 mK for the individual nanoobjects starting from the main building block Au nanocrystals (NCs) to the final Au-ZnS QDs. The study divulges the evolution of the energy structure and the charge transport from the single metallic building block core to the core-shell metal-semiconductor QDs. Furthermore, we successfully determined the contributions related to the quantum-confinement-induced excitonic band structure of the ZnS nano-shell and the charging energy of the system by applying a semi-empirical approach considering a double barrier tunnel junction (DBTJ) arrangement. We detect strong conductance peaks in Au-ZnS QDs due to the overlapping of the energy structure of the Au nano-core and the discrete energy states of the semiconductor ZnS nano-shell. Our findings will help in understanding the electronic properties of metal-semiconductor QDs. The outcomes therefore have the potential to fabricate tailored metal-semiconductor QDs for single-electron devices.

Design guidelines for transition metals as interstitial emitters in silicon nanocrystals to tune photoluminescence properties: zinc as biocompatible example

Silicon nanocrystals (Si NCs) are attractive candidates for biomarkers in medical imaging. Building on recent work [McVey et al., J. Chem. Phys. Lett., 2015, 6/9, 1573; McVey et al., Nanoscale, 2018, 15600], we focus on interstitial (i-) doping of Si NCs by transition metals (TMs), and investigate the optoelectronic structure with Zn as example. Carrying out extensive ground and excited state calculations using density functional theory (DFT), we provide insight into the interdependencies of parameters which define photoluminescence (PL) properties as per TM element, their position, and their density within Si NCs of realistic size. For i-Zn in Si NCs, we predict a very high radiation efficiency with a wavelength located well above the range of auto-luminescence originating from human tissue and blood. We derive general guidelines for i-TM doping of Si NCs to arrive at a desired emission wavelength with maximum radiation efficiency. Moving on from this general description, we reveal the concept of using the plasmonic resonance of i-TM dopants in the microwave (μW) spectrum to trigger selective thermal apoptosis of tagged cells in vivo after cell marking, paving the way towards a theragnostics tool with minimum side effects.

Dielectric Confinement and Excitonic Effects in Two-Dimensional Nanoplatelets

Quasi-two-dimensional (2D) semiconductor nanoplatelets manifest strong quantum confinement with exceptional optical characteristics of narrow photoluminescence peaks with energies tunable by thickness with monolayer precision. We employed scanning tunneling spectroscopy (STS) in conjunction with optical measurements to probe the thickness-dependent band gap and density of excited states in a series of CdSe nanoplatelets. The tunneling spectra, measured in the double-barrier tunnel junction configuration, reveal the effect of quantum confinement on the band gap taking place mainly through a blue-shift of the conduction band edge, along with a signature of 2D electronic structure intermixed with finite lateral-size and/or defects effects. The STS fundamental band gaps are larger than the optical gaps as expected from the contributions of exciton binding in the absorption, as confirmed by theoretical calculations. The calculations also point to strong valence band mixing between the light- and split-off hole levels. Strikingly, the energy difference between the heavy-hole and light-hole levels in the tunneling spectra are significantly larger than the corresponding values extracted from the absorption spectra. Possible explanations for this, including an interplay of nanoplatelet charging, dielectric confinement, and difference in exciton binding energy for light and heavy holes, are analyzed and discussed.

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

Donor-Acceptor Pair Recombination in Size-Purified Silicon Quantum Dots

Shallow impurity doping is an efficient route to tailor optical and electronic features of semiconductor quantum dots (QDs). However, the effect of doping is often smeared by the size, shape, and composition inhomogeneities. In this paper, we study optical properties of almost monodispersed spherical silicon (Si) QDs that are heavily doped with boron (B) and phosphorus (P). The narrow size distribution achieved by a size-separation process enables us to extract doping-induced phenomena clearly. The degree of doping-induced shrinkage of the optical band gap is obtained in a wide size range. Comparison of the optical band gap with theoretical calculations allow us to estimate the number of active donor-acceptor pairs in a QD. Furthermore, we found that the size and detection energy dependence of the luminescence decay rate is significantly modified below a critical diameter, that is ∼5.5 nm. In the diameter range above 5.5 nm, the luminescence decay rate is distributed in a wide range depending on the detection energy even in size-purified Si QDs. The distribution may arise from that of donor-acceptor distances. On the other hand, in the diameter range below 5.5 nm the detection energy dependence of the decay rate almost disappears. In this size range, which is smaller than twice of the effective Bohr radius of B and P in bulk Si crystal, the donor-acceptor distance is not a crucial factor to determine the recombination rate.

Synthesis, optical properties and theoretical modelling of discrete emitting states in doped silicon nanocrystals for bioimaging

The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.

Long-lived luminescence of colloidal silicon quantum dots for time-gated fluorescence imaging in the second near infrared window in biological tissue

Boron (B) and phosphorus (P) codoped silicon quantum dots (Si QDs) are dispersible in polar solvents without organic ligands and exhibit photoluminescence (PL) in the first (NIR-I) and second (NIR-II) near infrared (NIR) windows in biological tissues due to the optical transition from the donor to acceptor states. We studied the relationship between the PL wavelength, lifetime and quantum yield (QY) of the colloidal solution and the composition of the starting material for the preparation. We found that the PL lifetime and the QY are primarily determined by the composition, while the PL wavelength is mainly determined by the growth temperature. By optimizing the composition, we achieved QYs of 20.1% and 1.74% in the NIR-I and NIR-II regions, respectively, in methanol. We demonstrate the application for time-gated imaging in the NIR-II range.

Solution Processing of Hydrogen-Terminated Silicon Nanocrystal for Flexible Electronic Device

We demonstrate solution processing of hydrogen-terminated silicon nanocrystals (H-Si NCs) for flexible electronic devices. To obtain high and uniform conductivity of a solution-processed Si NC film, we adopt a perfectly dispersed colloidal H-Si NC solution. We show a high conductivity (2 × 10^-5 S/cm) of a solution-processed H-Si NC film which is spin-coated in air. The NC film (area: 100 mm²) has uniform conductivity and responds to laser irradiation with 6.8 and 24.1 μs of rise and fall time. By using time-of-flight measurements, we propose a charge transport model in the H-Si NC film. For the proof-of-concept of this study, a flexible photodetector on a polyethylene terephthalate substrate is demonstrated by spin-coating colloidal H-Si NC solution in air. The photodetector can be bent in 5.9 mm bending radius at smallest, and the device properly works after being bent in 2500 cycles.

Visualizing a core-shell structure of heavily doped silicon quantum dots by electron microscopy using an atomically thin support film

We successfully visualize a core-shell structure of a heavily B and P codoped Si quantum dot (QD) by transmission electron microscopy using an ultra-thin graphene oxide support film. The enhanced contrast reveals that a codoped Si QD has a highly crystalline Si core and an amorphous shell composed of Si, B and P.

On the influence of multiple cations on the in-gap states and phototransport properties of iodide-based halide perovskites

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance.

Silicon quantum dots with heavily boron and phosphorus codoped shell

Heavily boron and phosphorus codoped silicon quantum dots (QDs) are dispersible in water without organic ligands and exhibit near infrared luminescence. We summarize the fundamental properties and demonstrate the formation of a variety of nanocomposites.