In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures

III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

Design of 2D materials - MSi2CxN4-x (M = Cr, Mo, and W; x = 1 and 2) - with tunable electronic and magnetic properties

Two-dimensional (2D) materials have attracted increasing interest in the past decades due to their unique physical and chemical properties for diverse applications. In this work, we present a first-principles design on a novel 2D family, MSi₂C_xN_4-x (M = Cr, Mo, and W; x = 1 and 2), based on density-functional theory (DFT). We find that all MSi₂C_xN_4-x monolayers are stable by investigating their mechanic, dynamic, and thermodynamic properties. Interestingly, we see that the alignment of magnetic moments can be tuned to achieve non-magnetism (NM), ferromagnetism (FM), anti-ferromagnetism (AFM) or paramagnetism (PM) by arranging the positions of carbon atoms in the 2D systems. Accordingly, their electronic properties can be controlled to obtain semiconductor, half-metal, or metal. The FM states in half-metallic 2D systems are contributed to the hole-mediated double exchange, while the AFM states are induced by super-exchange. Our findings show that the physical properties of 2D systems can be tuned by compositional and structural engineering, especially the layer of C atoms, which may provide guidance on the design and fabrication of novel 2D materials with projected properties for multi-functional applications.

Elastocapillary Force Induced Alignment of Large Area Planar Nanowires

Achieving large scale precise positioning of the vapor-liquid-solid (VLS) nanowires is one of the biggest challenges for mass production of nanowire-based devices. Although there have been many noteworthy progresses in postgrowth nanowire alignment method development over the past few decades, these methods are mostly suitable for low density applications only. For high density applications such as transistors, both high yield and density are required. Here, we report an elastocapillary force-induced nanowire-aligning method that is extremely simple, clean, and can achieve single/multiple nanowire arrays with up to 98.8% yield and submicron pitch between the nanowires.

Effect of Fe-doping on bending elastic properties of single-crystalline rutile TiO2 nanowires

Transition-metal-doping can improve some physical properties of titanium dioxide (TiO₂) nanowires (NWs), which leads to important applications in miniature devices. Here, we investigated the elastic moduli of single-crystalline pristine and Fe-doped rutile TiO₂ NWs using the three-point bending method, which is taken as a case study of impacts on the elastic properties of TiO₂ NWs caused by transition-metal-doping. The Young's modulus of the pristine rutile TiO₂ NWs decreases when the cross-sectional area increases (changing from 246 GPa to 93.2 GPa). However, the elastic modulus of the Fe-doped rutile NWs was found to increase with the cross-sectional area (changing from 91.8 GPa to 200 GPa). For NWs with similar geometrical size, the elastic modulus (156.8 GPa) for Fe-doped rutile NWs is 24% smaller than that (194.5 GPa) of the pristine rutile TiO₂ NWs. The vacancies generated by Fe-doping are supposed to cause the reduction of elastic modulus of rutile TiO₂ NWs. This work provides a fundamental understanding of the effects of transition-metal-doping on the elastic properties of TiO₂ NWs.

Investigating the mechanical properties of GeSn nanowires

Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1-9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were used to obtain size-dependent Young's moduli and to relate the mechanical characteristics of the alloy nanowires to geometry and Sn incorporation. The mechanical properties of the GeSn nanowires make them highly promising for applications in next generation NEM devices.

General existence of flexural mode doublets in nanowires targeting vectorial sensing applications

Nanowires (NWs) are one of the fundamental building blocks for nanoscale devices, and have been frequently utilized as mechanical resonators. Earlier studies show that ultra-sensitive vectorial sensing toolkits can be fabricated by changing the flexural mode of NWs to oscillation doublets along two orthogonal directions. Based on in silico studies and the Timoshenko beam theory, this work finds that the dual orthogonal flexural mode of NWs can be effectively controlled through the proper selection of their growth direction. It is found that metallic NWs with a directional-independent shear modulus possess a single flexural mode. However, NWs with a directional-dependent shear modulus naturally exhibit flexural mode doublets, which do not disappear even with increasing slenderness ratio. Further studies show that such a feature generally exists in other NWs, such as Si NWs. Mimicking a pendulum configuration as used in NW-based scanning force microscopy, the cantilevered 110 Si NW demonstrates zeptogram mass resolution and a force sensitivity down to the order of 10-24 N Hz-1/2 (yN Hz-1/2) in both transverse directions. The findings in this work open up a new and facile avenue to fabricate 2D vectorial force sensors, which could enable ultra-sensitive and novel detection devices/systems for 2D effects, such as the anisotropy strength of atomic bonds.

Mechanically strengthened graphene-Cu composite with reduced thermal expansion towards interconnect applications

High-density integration technologies with copper (Cu) through-silicon via (TSV) have emerged as viable alternatives for achieving the requisite integration densities for the portable electronics and micro-electro-mechanical systems (MEMSs) package. However, significant thermo-mechanical stresses can be introduced in integrated structures during the manufacturing process due to mismatches of thermal expansion and the mechanical properties between Cu and silicon (Si). The high-density integration demands an interconnection material with a strong mechanical strength and small thermal expansion mismatch. In this study, a novel electroplating method is developed for the synthesis of a graphene-copper (G-Cu) composite with electrochemically exfoliated graphenes. The fabrication and evaluation of the G-Cu composite microstructures, including the microcantilevers and micromirrors supported by the composite, are reported. We evaluated not only the micromechanical properties of the G-Cu composite based on in-situ mechanical resonant frequency measurements using a laser Doppler vibrometer but also the coefficients of thermal expansion (CTE) of the composite based on curvature radius measurements at a temperature range of 20-200 °C. The Young's modulus and shear modulus of the composite are approximately 123 and 51 GPa, which are 1.25 times greater and 1.22 times greater, respectively, than those of pure Cu due to the reinforcement of graphene. The G-Cu composite exhibits a 23% lower CTE than Cu without sacrificing electrical conductivity. These results show that the mechanically strengthened G-Cu composite with reduced thermal expansion is an ideal and reliable interconnection material instead of Cu for complex integration structures.