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Pal S, Mohan M, Priya KS, Murugavel P. Photoelectrocaloric effect in ferroelectric oxide. Sci Rep 2022; 12:6390. [PMID: 35430579 PMCID: PMC9013360 DOI: 10.1038/s41598-022-10331-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2022] [Accepted: 04/04/2022] [Indexed: 11/27/2022] Open
Abstract
The enhanced electrocaloric (EC) effect in solid-state-based lead-free ferroelectric Ba0.875(Bi0.5Li0.5)0.125TiO3 system is investigated under light as an external stimulus. The sample exhibits an analogous value of maximum change in entropy at Curie temperature, extracted from the two different measurements process. Notably, the sample depicts maximum value of adiabatic change in temperature (ΔT) as 1.27 K and isothermal entropy change (ΔS) as 2.05 J/K kg along with the EC coefficient value of 0.426 K mm/kV, under dark conditions. In addition, the sample exhibits > 0.5 K adiabatic temperature change over a broad temperature range (~ 35 K). Remarkably, the EC parameters display ~ 27% enhancement upon 405 nm light illumination. The demonstrated photoelectrocaloric effect is found to be in accordance with theoretical formalism. The present work elucidates the light as an additional degree of freedom to widen the potential of solid-state-based technologies for advanced environment-friendly cooling devices.
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Sati A, Pokhriyal P, Kumar A, Anwar S, Sagdeo A, Lalla NP, Sagdeo PR. Origin of ferroelectricity in cubic phase of Hf substituted BaTiO 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:165403. [PMID: 33752190 DOI: 10.1088/1361-648x/abf0bf] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Accepted: 03/22/2021] [Indexed: 06/12/2023]
Abstract
The origin of ferroelectricity in the cubic phase of BaTi1-xHfxO3has been investigated. The presence of well-defined ferroelectric polarization versus electric field (PE) hysteresis loop in the samples with global cubic symmetry suggests the presence of 'local polar regions', induced possibly due to the huge difference in the electronegativity and also difference in the ionic radii of Hf+4and Ti+4ions, which may lead to local structural disorder. The presence of polar regions is also supported through the appearance of A1(TO) polar mode in Raman spectra which in principle should be absent in the samples with cubic symmetry. The results are discussed in terms of disorder-induced local dipoles due to the electronegativity difference between Hf and Ti ions.
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Affiliation(s)
- Aanchal Sati
- Material Research Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Indore-453552, India
| | - Preeti Pokhriyal
- Synchrotron Utilization Section, Raja Ramanna Center for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - Anil Kumar
- Material Research Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Indore-453552, India
| | - Shahid Anwar
- CSIR-Institute of Minerals and Materials Technology, Bhubaneswar-751-013, India
| | - Archna Sagdeo
- Synchrotron Utilization Section, Raja Ramanna Center for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
| | - N P Lalla
- UGC-DAE Consortium for scientific research, University campus, Khandwa road, Indore-452001, India
| | - P R Sagdeo
- Material Research Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Indore-453552, India
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3
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Cheng S, Fan Z, Rao J, Hong L, Huang Q, Tao R, Hou Z, Qin M, Zeng M, Lu X, Zhou G, Yuan G, Gao X, Liu JM. Highly Controllable and Silicon-Compatible Ferroelectric Photovoltaic Synapses for Neuromorphic Computing. iScience 2020; 23:101874. [PMID: 33344918 PMCID: PMC7736912 DOI: 10.1016/j.isci.2020.101874] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2020] [Revised: 09/29/2020] [Accepted: 11/24/2020] [Indexed: 11/19/2022] Open
Abstract
Ferroelectric synapses using polarization switching (a purely electronic switching process) to induce analog conductance change have attracted considerable interest. Here, we propose ferroelectric photovoltaic (FePV) synapses that use polarization-controlled photocurrent as the readout and thus have no limitations on the forms and thicknesses of the constituent ferroelectric and electrode materials. This not only makes FePV synapses easy to fabricate but also reduces the depolarization effect and hence enhances the polarization controllability. As a proof-of-concept implementation, a Pt/Pb(Zr0.2Ti0.8)O3/LaNiO3 FePV synapse is facilely grown on a silicon substrate, which demonstrates continuous photovoltaic response modulation with good controllability (small nonlinearity and write noise) enabled by gradual polarization switching. Using photovoltaic response as synaptic weight, this device exhibits versatile synaptic functions including long-term potentiation/depression and spike-timing-dependent plasticity. A simulated FePV synapse-based neural network achieves high accuracies (>93%) for image recognition. This study paves a new way toward highly controllable and silicon-compatible synapses for neuromorphic computing.
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Affiliation(s)
- Shengliang Cheng
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Corresponding author
| | - Jingjing Rao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Lanqing Hong
- Department of Industrial Systems Engineering and Management, National University of Singapore, 117576, Singapore
| | - Qicheng Huang
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Ruiqiang Tao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Minghui Qin
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Min Zeng
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guoliang Yuan
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xingsen Gao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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Ducharne B, Juuti J, Bai Y. A Simulation Model for Narrow Band Gap Ferroelectric Materials. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000052] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Benjamin Ducharne
- Laboratoire de Génie Electrique et Ferroélectricité INSA Lyon Villeurbanne 69621 France
| | - Jari Juuti
- Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering University of Oulu Oulu FI‐90014 Finland
| | - Yang Bai
- Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering University of Oulu Oulu FI‐90014 Finland
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Pandey R, Vats G, Yun J, Bowen CR, Ho-Baillie AWY, Seidel J, Butler KT, Seok SI. Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807376. [PMID: 31441161 DOI: 10.1002/adma.201807376] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Revised: 03/23/2019] [Indexed: 06/10/2023]
Abstract
An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.
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Affiliation(s)
- Richa Pandey
- Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, 400076, India
| | - Gaurav Vats
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jae Yun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Chris R Bowen
- Materials Research Centre, Department of Mechanical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Anita W Y Ho-Baillie
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Keith Tobias Butler
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford Didcot, Oxfordshire, OX11 0QX, UK
| | - Sang Il Seok
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50, Ulsan, 44919, South Korea
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Xie W, Li P, Zhu Q, Wang Y, Zhang Y, Cai Y, Xu S, Zhang J. Structural origins, tunable photoluminescence governed by impurities and white-light irradiation in transparent Pr3+:BaTiO3 glass-ceramics. CrystEngComm 2019. [DOI: 10.1039/c9ce00373h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Study for impurity- and irradiation-induced structure evolution in mono Pr3+:BaTiO3 glass ceramics notably promotes the active control of fluorescence emission.
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Affiliation(s)
- Wenqing Xie
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Panpan Li
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Qijing Zhu
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Yun Wang
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Yunjie Zhang
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Yangjian Cai
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Shiqing Xu
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
| | - Junjie Zhang
- College of Materials Science and Engineering
- China Jiliang University
- Hangzhou 310018
- P. R. China
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Bai Y, Vats G, Seidel J, Jantunen H, Juuti J. Boosting Photovoltaic Output of Ferroelectric Ceramics by Optoelectric Control of Domains. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803821. [PMID: 30589464 DOI: 10.1002/adma.201803821] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2018] [Revised: 08/07/2018] [Indexed: 06/09/2023]
Abstract
Photo-ferroelectric single crystals and highly oriented thin-films have been extensively researched recently, with increasing photovoltaic energy conversion efficiency (from 0.5% up to 8.1%) achieved. Rare attention has been paid to polycrystalline ceramics, potentially due to their negligible efficiency. However, ceramics offer simple and cost-effective fabrication routes and stable performance compared to single crystals and thin-films. Therefore, a significantly increased efficiency of photo-ferroelectric ceramics contributes toward widened application areas for photo-ferroelectrics, e.g., multisource energy harvesting. Here, all-optical domain control under illumination, visible-range light-tunable photodiode/transistor phenomena and optoelectrically tunable photovoltaic properties are demonstrated, using a recently discovered photo-ferroelectric ceramic (K0.49Na0.49Ba0.02)(Nb0.99Ni0.01)O2.995. For this monolithic material, tuning of the electric conductivity independent of the ferroelectricity is achieved, which previously could only be achieved in organic phase-separate blends. Guided by these discoveries, a boost of five orders of magnitude in the photovoltaic output power and energy conversion efficiency is achieved via optical and electrical control of ferroelectric domains in an energy-harvesting circuit. These results provide a potentially supplementary approach and knowledge for other photo-ferroelectrics to further boost their efficiency for energy-efficient circuitry designs and enable the development of a wide range of optoelectronic devices.
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Affiliation(s)
- Yang Bai
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90580, Oulu, Finland
| | - Gaurav Vats
- School of Materials Science and Engineering, Faculty of Science, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, Faculty of Science, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Heli Jantunen
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90580, Oulu, Finland
| | - Jari Juuti
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90580, Oulu, Finland
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Thakre A, Kushvaha SS, Kumar MS, Kumar A. Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network. RSC Adv 2018; 8:32794-32798. [PMID: 35547666 PMCID: PMC9086369 DOI: 10.1039/c8ra06101g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2018] [Accepted: 09/17/2018] [Indexed: 11/21/2022] Open
Abstract
An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO2(N:HfO2)/SiO2/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO2/Ag heterostructure exhibited a giant change (OFF/ON ratio > 50 without applying any external electrical field) in its conductance when illuminated by a very weak (25 mW cm-2) near-UV monochromatic light with a low dark current (nearly 20 nA). The presented near-UV photodetector offers photoresponsivity of ∼2.4 mA W-1 at an applied voltage of 1 V. We observed an optically generated internal open circuit voltage of ∼155 mV and short circuit current ∼430 nA, which can be attributed to the quantum confinement of free charge carriers in the nanorod matrix. Interestingly, it also shows a negative capacitance after near-UV illumination. It has great potential as a self-powered UV photodetector and in metamaterial applications.
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Affiliation(s)
- Atul Thakre
- Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| | - Sunil Singh Kushvaha
- Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| | - M Senthil Kumar
- Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| | - Ashok Kumar
- Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
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Song G, Gao B, Li G, Zhang J. First-principles study on the electric structure and ferroelectricity in epitaxial CsSnI3 films. RSC Adv 2017. [DOI: 10.1039/c7ra07735a] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Epitaxial strain can induce ferroelectricity and enhance the polarization in the inorganic hybrid perovskite material CsSnI3 for energy applications.
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Affiliation(s)
- Guang Song
- Department of Physics
- Huaiyin Institute of Technology
- Huaian 223003
- China
- Jiangsu Provincial Key Laboratory of Palygorskite Science and Applied Technology
| | - Benling Gao
- Department of Physics
- Huaiyin Institute of Technology
- Huaian 223003
- China
| | - Guannan Li
- Department of Physics
- Huaiyin Institute of Technology
- Huaian 223003
- China
- National Laboratory of Solid State Microstructures
| | - Jun Zhang
- Department of Physics
- Huaiyin Institute of Technology
- Huaian 223003
- China
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