Prediction of a novel 2D porous boron nitride material with excellent electronic, optical and catalytic properties

Holey graphyne (HGY) is a recently synthesized two-dimensional semiconducting allotrope of carbon composed of a regular pattern of six- and eight-vertex carbon rings. In this study, based on first-principles density functional theory and molecular dynamics simulations, we predict a similar stable porous boron nitride holey graphyne-like structure that we call BN-holey-graphyne (BN-HGY). The dynamical and thermal stability of the structure at room temperature is confirmed by performing calculations of the phonon dispersion relations, and also ab initio molecular dynamics simulations. The BN-HGY structure has a wide direct band gap of 5.18 eV, which can be controllably tuned by substituting carbon, aluminum, silicon, and phosphorus atoms in place of sp and sp² hybridized boron and nitrogen atoms of BN-HGY. We have also calculated the optical properties of the HGY and BN-HGY structures for the first time and found that the optical absorption spectra of these structures span the full visible region and a wide range of the ultraviolet region. We found that the Gibbs free energy of the BN-HGY structure for the hydrogen adsorption process is very close to zero (-0.04 eV) and, therefore, the BN-HGY structure can be utilized as a potential catalyst for the HER. Therefore, we propose that the boron nitride analog of holey graphyne can be synthesized, and it has a wide range of applications in nanoelectronics, optoelectronics, spintronics, ultraviolet lasers, and solar cell devices.

Bandgap evolution in nanographene assemblies

Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we established bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show that the inter-molecule bond density rules the bandgap. The increase in such bond density increases the valence/conduction bandwidth decreasing the energy gap linearly. We derived an effective model that allows the interpretation of the arising energy gap for general particle-hole symmetric molecular arrangements based on inter-molecular bond strength.

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has attracted great attention. By using ab initio density functional theory with van der Waals corrections, we theoretically investigated the structural and electronic properties of the heterostructures composed of antimonene and monolayer MoS₂. Our results revealed that the Sb/MoS₂ hetero-bilayer is an indirect semiconductor with type-II band alignment, which implies the spatial separation of photogenerated electron–hole pairs. Due to the weak van der Waals interlayer interactions between the adjacent sheets of the hetero-bilayer systems, the band structures of isolated antimonene and monolayer MoS₂ are preserved. In addition, a tunable band gap in Sb/MoS₂ hetero-bilayer can be realized by applying in-plane biaxial compressing/stretching. When antimonene and monolayer MoS₂ are stacked into superlattices, the indirect semiconductors turn into direct semiconductors with the decreased band gaps. Our results show that the antimonene-based hybrid structures are good candidate structures for photovoltaic devices.

Tunable Schottky barrier in InTe/graphene van der Waals heterostructure

The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than -0.06 V Å^-1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å^-1 or smaller than -0.13 V Å^-1.

Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation

Opening a band gap in bilayer graphene (BLG) is of significance for potential applications in graphene-based electronic and photonic devices. Here, we report the generation of a sizable band gap in BLG by intercalating silicene between BLG and Ru substrate. We first grow high-quality Bernal-stacked BLG on Ru(0001) and then intercalate silicene to the interface between the BLG and Ru, which is confirmed by low-energy electron diffraction and scanning tunneling microscopy. Raman spectroscopy shows that the G and 2D peaks of the intercalated BLG are restored to the freestanding-BLG features. Angle-resolved photoelectron spectroscopy measurements show that a band gap of about 0.2 eV opens in the BLG. Density functional theory calculations indicate that the large-gap opening results from a cooperative contribution of the doping and rippling/strain in the BLG. This work provides insightful understanding on the mechanism of band gap opening in BLG and enhances the potential of graphene-based device development.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructures are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of GaTe and graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applied electric field. Moreover, a transformation from n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V Å^-1. These properties are fundamental to the design of new Schottky nanodevices based on the GaTe/graphene heterostructure.

Tuning the activity of the inert MoS2 surface via graphene oxide support doping towards chemical functionalization and hydrogen evolution: a density functional study

The basal plane of MoS₂ provides a promising platform for chemical functionalization and the hydrogen evolution reaction (HER); however, its practical utilization remains challenging due to the lack of active sites and its low conductivity. Herein, using first principles simulations, we first proposed a novel and effective strategy for significantly enhancing the activity of the inert MoS₂ surface using a graphene oxide (GO) support (MoS₂/GOs). The chemical bonding of the functional groups (CH₃ and NH₂) on the MoS₂-GO hybrid is stronger than that in freestanding MoS₂ or MoS₂-graphene. Upon increasing the oxygen group concentration or introducing N heteroatoms into the GO support, the stability of the chemically functionalized MoS₂ is improved. Furthermore, use of GOs to support pristine and defective MoS₂ with a S vacancy (S-MoS₂) can greatly promote the HER activity of the basal plane. The catalytic activity of S-MoS₂ is further enhanced by doping N into GOs; this results in a hydrogen adsorption free energy of almost zero (ΔG_H = ∼-0.014 eV). The coupling interaction with the GO substrate reduces the p-type Schottky barrier heights (SBH) of S-MoS₂ and modifies its electronic properties, which facilitate charge transfer between them. Our calculated results are consistent with the experimental observations. Thus, the present results open new avenues for the chemical functionalization of MoS₂-based nanosheets and HER catalysts.

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure

In this work, using density functional theory we investigated systematically the electronic properties and Schottky barrier modulation in a multilayer graphene/bilayer-GaSe heterostructure by varying the interlayer spacing and by applying an external electric field.

Achieving ultrahigh carrier mobilities and opening the band gap in two-dimensional Si2BN

Two-dimensional Si₂BN material has been theoretically predicted that the superior carrier mobility. That's why we believe that it is a promising candidates for 2D electronics applications and has attracted interest in the scientific community for further research.