1
|
Mahamiya V, Shukla A, Chakraborty B. Prediction of a novel 2D porous boron nitride material with excellent electronic, optical and catalytic properties. Phys Chem Chem Phys 2022; 24:21009-21019. [PMID: 36000355 DOI: 10.1039/d2cp02705d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Holey graphyne (HGY) is a recently synthesized two-dimensional semiconducting allotrope of carbon composed of a regular pattern of six- and eight-vertex carbon rings. In this study, based on first-principles density functional theory and molecular dynamics simulations, we predict a similar stable porous boron nitride holey graphyne-like structure that we call BN-holey-graphyne (BN-HGY). The dynamical and thermal stability of the structure at room temperature is confirmed by performing calculations of the phonon dispersion relations, and also ab initio molecular dynamics simulations. The BN-HGY structure has a wide direct band gap of 5.18 eV, which can be controllably tuned by substituting carbon, aluminum, silicon, and phosphorus atoms in place of sp and sp2 hybridized boron and nitrogen atoms of BN-HGY. We have also calculated the optical properties of the HGY and BN-HGY structures for the first time and found that the optical absorption spectra of these structures span the full visible region and a wide range of the ultraviolet region. We found that the Gibbs free energy of the BN-HGY structure for the hydrogen adsorption process is very close to zero (-0.04 eV) and, therefore, the BN-HGY structure can be utilized as a potential catalyst for the HER. Therefore, we propose that the boron nitride analog of holey graphyne can be synthesized, and it has a wide range of applications in nanoelectronics, optoelectronics, spintronics, ultraviolet lasers, and solar cell devices.
Collapse
Affiliation(s)
- Vikram Mahamiya
- Indian Institute of Technology Bombay, Mumbai 400076, India.
| | - Alok Shukla
- Indian Institute of Technology Bombay, Mumbai 400076, India.
| | - Brahmananda Chakraborty
- High pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Bombay, Mumbai, 40085, India.,Homi Bhabha National Institute, Mumbai, 400094, India
| |
Collapse
|
2
|
Crasto de Lima F, Fazzio A. Bandgap evolution in nanographene assemblies. Phys Chem Chem Phys 2021; 23:11501-11506. [PMID: 33960330 DOI: 10.1039/d1cp01030a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we established bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show that the inter-molecule bond density rules the bandgap. The increase in such bond density increases the valence/conduction bandwidth decreasing the energy gap linearly. We derived an effective model that allows the interpretation of the arising energy gap for general particle-hole symmetric molecular arrangements based on inter-molecular bond strength.
Collapse
Affiliation(s)
- F Crasto de Lima
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970, Campinas, SP, Brazil.
| | - A Fazzio
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970, Campinas, SP, Brazil.
| |
Collapse
|
3
|
Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS 2. NANOMATERIALS 2020; 10:nano10122358. [PMID: 33260916 PMCID: PMC7761451 DOI: 10.3390/nano10122358] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Revised: 11/22/2020] [Accepted: 11/23/2020] [Indexed: 11/17/2022]
Abstract
Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has attracted great attention. By using ab initio density functional theory with van der Waals corrections, we theoretically investigated the structural and electronic properties of the heterostructures composed of antimonene and monolayer MoS2. Our results revealed that the Sb/MoS2 hetero-bilayer is an indirect semiconductor with type-II band alignment, which implies the spatial separation of photogenerated electron–hole pairs. Due to the weak van der Waals interlayer interactions between the adjacent sheets of the hetero-bilayer systems, the band structures of isolated antimonene and monolayer MoS2 are preserved. In addition, a tunable band gap in Sb/MoS2 hetero-bilayer can be realized by applying in-plane biaxial compressing/stretching. When antimonene and monolayer MoS2 are stacked into superlattices, the indirect semiconductors turn into direct semiconductors with the decreased band gaps. Our results show that the antimonene-based hybrid structures are good candidate structures for photovoltaic devices.
Collapse
|
5
|
Li H, Zhou Z, Wang H. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure. NANOTECHNOLOGY 2020; 31:335201. [PMID: 32348976 DOI: 10.1088/1361-6528/ab8e77] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than -0.06 V Å-1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å-1 or smaller than -0.13 V Å-1.
Collapse
Affiliation(s)
- Hengheng Li
- Henan Key Laboratory of Photovoltaic Materials, and School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | | | | |
Collapse
|
6
|
Guo H, Zhang R, Li H, Wang X, Lu H, Qian K, Li G, Huang L, Lin X, Zhang YY, Ding H, Du S, Pantelides ST, Gao HJ. Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation. NANO LETTERS 2020; 20:2674-2680. [PMID: 32125162 DOI: 10.1021/acs.nanolett.0c00306] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Opening a band gap in bilayer graphene (BLG) is of significance for potential applications in graphene-based electronic and photonic devices. Here, we report the generation of a sizable band gap in BLG by intercalating silicene between BLG and Ru substrate. We first grow high-quality Bernal-stacked BLG on Ru(0001) and then intercalate silicene to the interface between the BLG and Ru, which is confirmed by low-energy electron diffraction and scanning tunneling microscopy. Raman spectroscopy shows that the G and 2D peaks of the intercalated BLG are restored to the freestanding-BLG features. Angle-resolved photoelectron spectroscopy measurements show that a band gap of about 0.2 eV opens in the BLG. Density functional theory calculations indicate that the large-gap opening results from a cooperative contribution of the doping and rippling/strain in the BLG. This work provides insightful understanding on the mechanism of band gap opening in BLG and enhances the potential of graphene-based device development.
Collapse
Affiliation(s)
- Hui Guo
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Ruizi Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Hang Li
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Xueyan Wang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Hongliang Lu
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Kai Qian
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Geng Li
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Li Huang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Xiao Lin
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Yu-Yang Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Hong Ding
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, P.R. China
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, P.R. China
| | - Sokrates T Pantelides
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Hong-Jun Gao
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P.R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, P.R. China
| |
Collapse
|
7
|
Li H, Zhou Z, Zhang K, Wang H. Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field. NANOTECHNOLOGY 2019; 30:405207. [PMID: 31247615 DOI: 10.1088/1361-6528/ab2d67] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructures are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of GaTe and graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applied electric field. Moreover, a transformation from n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V Å-1. These properties are fundamental to the design of new Schottky nanodevices based on the GaTe/graphene heterostructure.
Collapse
Affiliation(s)
- Hengheng Li
- Henan Key Laboratory of Photovoltaic Materials, and School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | | | | | | |
Collapse
|
8
|
Tang S, Wu W, Zhang S, Ye D, Zhong P, Li X, Liu L, Li YF. Tuning the activity of the inert MoS 2 surface via graphene oxide support doping towards chemical functionalization and hydrogen evolution: a density functional study. Phys Chem Chem Phys 2018; 20:1861-1871. [PMID: 29292808 DOI: 10.1039/c7cp06636h] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The basal plane of MoS2 provides a promising platform for chemical functionalization and the hydrogen evolution reaction (HER); however, its practical utilization remains challenging due to the lack of active sites and its low conductivity. Herein, using first principles simulations, we first proposed a novel and effective strategy for significantly enhancing the activity of the inert MoS2 surface using a graphene oxide (GO) support (MoS2/GOs). The chemical bonding of the functional groups (CH3 and NH2) on the MoS2-GO hybrid is stronger than that in freestanding MoS2 or MoS2-graphene. Upon increasing the oxygen group concentration or introducing N heteroatoms into the GO support, the stability of the chemically functionalized MoS2 is improved. Furthermore, use of GOs to support pristine and defective MoS2 with a S vacancy (S-MoS2) can greatly promote the HER activity of the basal plane. The catalytic activity of S-MoS2 is further enhanced by doping N into GOs; this results in a hydrogen adsorption free energy of almost zero (ΔGH = ∼-0.014 eV). The coupling interaction with the GO substrate reduces the p-type Schottky barrier heights (SBH) of S-MoS2 and modifies its electronic properties, which facilitate charge transfer between them. Our calculated results are consistent with the experimental observations. Thus, the present results open new avenues for the chemical functionalization of MoS2-based nanosheets and HER catalysts.
Collapse
Affiliation(s)
- Shaobin Tang
- Key Laboratory of Organo-Pharmaceutical Chemistry of Jiangxi Province, Gannan Normal University, Ganzhou 341000, China.
| | | | | | | | | | | | | | | |
Collapse
|
9
|
Phuc HV, Hieu NN, Hoi BD, Nguyen CV. Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure. Phys Chem Chem Phys 2018; 20:17899-17908. [DOI: 10.1039/c8cp02190b] [Citation(s) in RCA: 83] [Impact Index Per Article: 13.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
In this work, using density functional theory we investigated systematically the electronic properties and Schottky barrier modulation in a multilayer graphene/bilayer-GaSe heterostructure by varying the interlayer spacing and by applying an external electric field.
Collapse
Affiliation(s)
- Huynh V. Phuc
- Institute of Research and Development
- Duy Tan University
- Da Nang
- Vietnam
| | - Nguyen N. Hieu
- Institute of Research and Development
- Duy Tan University
- Da Nang
- Vietnam
| | - Bui D. Hoi
- Department of Physics
- Hue University of Education
- Hue
- Vietnam
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- 100000 Ha Noi
- Vietnam
| |
Collapse
|
10
|
Singh D, Gupta SK, Sonvane Y, Hussain T, Ahuja R. Achieving ultrahigh carrier mobilities and opening the band gap in two-dimensional Si2BN. Phys Chem Chem Phys 2018; 20:21716-21723. [DOI: 10.1039/c8cp03617a] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional Si2BN material has been theoretically predicted that the superior carrier mobility. That's why we believe that it is a promising candidates for 2D electronics applications and has attracted interest in the scientific community for further research.
Collapse
Affiliation(s)
- Deobrat Singh
- Department of Physics
- Government College of Engineering and Technology
- Bikaner 334004
- India
- Advanced Materials Lab
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group
- Department of Physics
- St. Xavier's College
- Ahmedabad 380009
- India
| | - Yogesh Sonvane
- Advanced Materials Lab
- Department of Applied Physics
- S. V. National Institute of Technology
- Surat 395007
- India
| | - Tanveer Hussain
- Centre for Theoretical and Computational Molecular Science
- Australian Institute for Bioengineering and Nanotechnology
- The University of Queensland
- Brisbane
- Australia
| | - Rajeev Ahuja
- Department of Physics and Astronomy
- Uppsala University
- Uppsala 751 20
- Sweden
| |
Collapse
|