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Pradhan BK, Tyagi P, Pal S, Mauraya AK, Roopa, Aggarwal V, Pal P, Kushvaha SS, Muthusamy SK. Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38427781 DOI: 10.1021/acsami.3c16892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
This study investigates the influence of surface nitridation of Ta metal foil substrates on the growth of GaN nanorods using the laser molecular beam epitaxy (LMBE) technique and the field emission characteristics of the grown GaN nanorod ensemble. Surface morphology examinations underscore the pivotal role of Ta foil nitridation in shaping the dimensions and densities of GaN nanorods. Bare Ta foil fosters the formation of high-density, vertically self-aligned GaN nanorods at a growth temperature of 700 °C. Furthermore, the density of these nanorods is directly related to the duration of Ta foil nitridation, with increased duration leading to a reduced nanorod density. X-ray Photoelectron Spectroscopy (XPS) studies reveal that the transition of the Ta foil surface from tantalum oxide to tantalum nitride during nitridation emerges as a crucial factor influencing GaN nanorod growth. Photoluminescence (PL) spectroscopy at ambient temperature reveals a strong near-band-edge (NBE) emission peak with negligible defect-related peaks, displaying the high optical quality of the GaN nanorods. The highly dense vertically aligned GaN nanorod ensemble growth without Ta prenitridation exhibits the most favorable field emission performance, featuring a turn-on field of 2.1 V/μm, a field enhancement factor of 2480, and a stable long-term operation at the emission current density of 2.26 mA/cm2. This study advances the understanding of the role of the surface chemistry of metal foil in determining GaN nanorod growth and opens up exciting possibilities for tailoring advanced optoelectronic devices for specific application requirements.
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Affiliation(s)
- Bipul Kumar Pradhan
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Prashant Tyagi
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Samanta Pal
- CSIR─Central Glass and Ceramic Research Institute, 196, Raja S. C. Mullick Road, Kolkata 700032, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Amit Kumar Mauraya
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Roopa
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Vishnu Aggarwal
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Prabir Pal
- CSIR─Central Glass and Ceramic Research Institute, 196, Raja S. C. Mullick Road, Kolkata 700032, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Sunil Singh Kushvaha
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Senthil Kumar Muthusamy
- CSIR─National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties. Sci Rep 2020; 10:10480. [PMID: 32591627 PMCID: PMC7319992 DOI: 10.1038/s41598-020-67531-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2020] [Accepted: 05/26/2020] [Indexed: 11/21/2022] Open
Abstract
We report the band gap tuning and facilitated charge transport at perylenediimide (PDI)/GaN interface in organic–inorganic hybrid nanostructure system over flexible titanium (Ti) foil. Energy levels of the materials perfectly align and facilitate high efficiency charge transfer from electron rich n-GaN to electron deficient PDI molecules. Proper interface formation resulted in band gap tuning as well as facilitated electron transport as evident in I–V characteristics. Growth of PDI/GaN hybrid system with band gap tuning from ultra-violet to visible region and excellent electrical properties open up new paradigm for fabrication of efficient optoelectronics devices on flexible substrates.
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Ma LA, Lai WZ, Wei ZH, Chen YB, Sun L, Ye XY, Chen HX, Wang QT. Synthesis, structure and optimized field emission properties of highly oriented ZnO/Pt core–shell nanorods on a Zn substrate. CrystEngComm 2020. [DOI: 10.1039/d0ce00528b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
The current density of as-fabricated Pt15/ZnO NR emitters was about 1900 times that of the bare ZnO emitters.
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Affiliation(s)
- L. A. Ma
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - W. Z. Lai
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - Z. H. Wei
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - Y. B. Chen
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - L. Sun
- Zhicheng College
- Fuzhou University
- Fuzhou
- China
| | - X. Y. Ye
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - H. X. Chen
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
| | - Q. T. Wang
- School of Materials Science and Engineering
- Fujian University of Technology
- Fuzhou
- China
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Sankaranarayanan S, Kandasamy P, Krishnan B. Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition. ACS OMEGA 2019; 4:14772-14779. [PMID: 31552316 PMCID: PMC6751544 DOI: 10.1021/acsomega.9b01284] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2019] [Accepted: 08/22/2019] [Indexed: 06/10/2023]
Abstract
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy, X-ray photoelectron spectroscopy, cathodoluminescence spectroscopy, optical microscopy, atomic force microscopy, and scanning electron microscopy. It was noticed that, in respect of both the substrates, when growth time and/or precursor-to-substrate distance is increased, thickness of the nanowires around the etch pits remains unaltered, but there is variation in the density of nanowires. In addition, formation of gallium nitride microwires within the etch pits was also observed on etched sapphire substrates. Similarly, the thickness and density of the microwires were found to increase with increase in growth time and decrease with increase in precursor-to-substrate distance. The dimensionality scaling of gallium nitride was found to have a positive effect in improving the luminescence property and band gap of the grown nanowires. This method of nanowire growth can be helpful in increasing the probability of multiple reflections in the materials which makes them a suitable candidate for optoelectronic devices.
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