Surface termination and strain-induced modulation of the structure and electronic properties in 2D perovskites (Cs2BCl4 & CsB2Cl5, B = Pb, Sn): a first-principles study

Two-dimensional (2D) halide perovskites have demonstrated impressive long-term stability and superior device performance as compared to their three-dimensional (3D) counterparts. The potential of 2D halide perovskites for advanced photovoltaic applications can be enhanced by an understanding of how external factors like strain could be used to tune their optoelectronic properties. This study explores the effects of biaxial strain on the structure and electronic transport properties of 2D halide perovskites, focusing on the lowest energy (001) surfaces of (Cs2BCl4 and CsB2Cl5, B = Pb or Sn) with CsCl and BCl2 terminations. Using first-principles calculations, we find that the lower energy CsCl terminated surface, resulting in Cs2BCl4, couples strongly with biaxial strain. This termination shows bandgap modulations from approximately 1.5 eV to 1.8 eV for Cs2PbCl4 and 1.2 eV to 1.5 eV for Cs2SnCl4 with biaxial strain. Within the acoustic deformation potential theory, we compute hole mobilities, and find substantial enhancements of approximately 80% for Pb-based and 50% for Sn-based systems, thereby emphasizing the potential of strain engineering to further optimize charge transport properties in 2D halide perovskites.

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

CsSnI₃ is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI₃ has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI₃ perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI₃ is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI₃-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS₂, CeO₂, TiO₂, ZnO, PCBM, and C₆₀. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI₃/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott-Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J-V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI₃ absorber with suitable ETLs including ZnO, IGZO, WS₂, PCBM, CeO₂, and C₆₀ ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI₃ PSCs.

Common Defects Accelerate Charge Carrier Recombination in CsSnI3 without Creating Mid-Gap States

Lead-free metal halide perovskites are environmentally friendly and have favorable electro-optical properties; however, their efficiencies are significantly below the theoretical limit. Using ab initio nonadiabatic molecular dynamics, we show that common intrinsic defects accelerate nonradiative charge recombination in CsSnI₃ without creating midgap traps. This is in contrast to Pb-based perovskites, in which many defects have little influence on and even prolong carrier lifetimes. Sn-related defects, such as Sn vacancies and replacement of Sn with Cs are most detrimental, since Sn removal breaks the largest number of bonds and strongly perturbs the Sn-I lattice that supports the carriers. The defects increase the nonadiabatic electron-vibrational coupling and interact strongly with free carrier states. Point defects associated with I atoms are less detrimental, and therefore, CsSnI₃ synthesis should be performed in Sn rich conditions. The study provides an atomistic rationalization of why lead-free CsSnI₃ exhibits lower photovoltaic efficiency compared to some lead-based perovskites.

Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation

SCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked and 2-T monolithic non-Pb tandem structures. CsSn0.5Ge0.5I3 (1.5 eV) was used as top cell wide bandgap absorber, while CsSnI3 (1.3 eV) was chosen as bottom cell low bandgap absorber. The top cell was simulated with AM 1.5G 1 Sun spectrum, and the bottom cell was simulated with the filtered spectrum from the top cell. To form a 2-T monolithic tandem device, ITO was used as the recombination layer; the current matching condition was investigated by varying the thickness of the absorber layers. For a current-matched device with a Jsc of 21.2 mA/cm2, optimized thicknesses of 450 nm and 815 nm were obtained for the top and bottom absorber layers, respectively. At these thicknesses, the PCEs of the top and bottom cells were 14.08% and 9.25%, respectively, and 18.32% for the final tandem configuration. A much simpler fabricated and simulated 4-T mechanically stacked tandem device, on the other hand, showcased top and bottom cell PCEs of 15.83% and 9.15%, at absorber layer thicknesses of 1300 nm and 900 nm, respectively, and a final overall tandem device PCE of 19.86%.

A generic Slater-Koster description of the electronic structure of centrosymmetric halide perovskites

The halide perovskites have truly emerged as efficient optoelectronic materials and show the promise of exhibiting nontrivial topological phases. Since the bandgap is the deterministic factor for these quantum phases, here, we present a comprehensive electronic structure study using first-principle methods by considering nine inorganic halide perovskites CsBX₃ (B = Ge, Sn, Pb; X = Cl, Br, I) in their three structural polymorphs (cubic, tetragonal, and orthorhombic). A series of exchange-correlation (XC) functionals are examined toward accurate estimation of the bandgap. Furthermore, while 13 orbitals are active in constructing the valence and conduction band spectra, here, we establish that a 4 orbital based minimal basis set is sufficient to build the Slater-Koster tight-binding (SK-TB) model, which is capable of reproducing the bulk and surface electronic structures in the vicinity of the Fermi level. Therefore, like the Wannier based TB model, the presented SK-TB model can also be considered an efficient tool to examine the bulk and surface electronic structures of the halide family of compounds. As estimated by comparing the model study and DFT band structure, the dominant electron coupling strengths are found to be nearly independent of XC functionals, which further establishes the utility of the SK-TB model.

Enhancing the Stability of Orthorhombic CsSnI3 Perovskite via Oriented π-Conjugated Ligand Passivation

Lead-free orthorhombic CsSnI₃ (Bγ-CsSnI₃) perovskite has been emerging as one of the potential candidates of photovoltaic materials with superior performance. However, the instability induced by rapid reconstructive phase transition and the oxidation of Sn²⁺ greatly limits their future application. We thus reported a strategy, oriented π-conjugated ligand passivation, for enhancing the stability of Bγ-CsSnI₃, simulated using a Bγ-CsSnI₃ slab model based on the first-principles computation. The phase stability was found to be strongly dependent on the orientations of phenylethylammonium (PEA⁺) ligands. The passivated Bγ-CsSnI₃ slab with the ligand molecule axis along [414] was demonstrated as the most stable with the lowest adsorption energy (E_ads). Based on this configuration, the calculated formation energies (E_form) of half- and full-monolayer coverage were even more negative than that of yellow phase (Y-) CsSnI₃ passivated by PEA⁺ ligands, verifying the enhanced phase stability. Furthermore, the surface states could be effectively suppressed and the downshifted conduction band minimum (CBM) resulted in a reduced band gap for the completely capped Bγ-CsSnI₃. Moreover, the CBM and the valence band maximum (VBM) of the system with complete coverage were respectively donated by the surface and bulky components of the slab, which might benefit the separation and transfer of photogenerated carriers.

Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI3 (M = Pb, Sn)

The structural phase transition, ferroelectric polarization, and electric properties have been investigated for photovoltaic films CsMI₃ (M = Pb, Sn) epitaxially grown along (001) direction based on the density functional theory. The calculated results indicate that the phase diagrams of two epitaxial CsPbI₃ and CsSnI₃ films are almost identical, except critical transition strains varying slightly. The epitaxial tensile strains induce two ferroelectric phases Pmc2₁, and Pmn2₁, while the compressive strains drive two paraelectric phases P2₁2₁2₁, P2₁2₁2. The larger compressive strain enhances the ferroelectric instability in these two films, eventually rendering them another ferroelectric state Pc. Whether CsPbI₃ or CsSnI₃, the total polarization of Pmn2₁ phase comes from the main contribution of B-position cations (Pb or Sn), whereas, for Pmc2₁ phase, the main contributor is the I ion. Moreover, the epitaxial strain effects on antiferrodistortive vector, polarization and band gap of CsMI₃ (M = Pb, Sn) are further discussed. Unusual electronic properties under epitaxial strains are also revealed and interpreted.