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Yadav K, Ray N. Surface termination and strain-induced modulation of the structure and electronic properties in 2D perovskites (Cs 2BCl 4 & CsB 2Cl 5, B = Pb, Sn): a first-principles study. Phys Chem Chem Phys 2023; 25:32330-32335. [PMID: 37997148 DOI: 10.1039/d3cp04343f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2023]
Abstract
Two-dimensional (2D) halide perovskites have demonstrated impressive long-term stability and superior device performance as compared to their three-dimensional (3D) counterparts. The potential of 2D halide perovskites for advanced photovoltaic applications can be enhanced by an understanding of how external factors like strain could be used to tune their optoelectronic properties. This study explores the effects of biaxial strain on the structure and electronic transport properties of 2D halide perovskites, focusing on the lowest energy (001) surfaces of (Cs2BCl4 and CsB2Cl5, B = Pb or Sn) with CsCl and BCl2 terminations. Using first-principles calculations, we find that the lower energy CsCl terminated surface, resulting in Cs2BCl4, couples strongly with biaxial strain. This termination shows bandgap modulations from approximately 1.5 eV to 1.8 eV for Cs2PbCl4 and 1.2 eV to 1.5 eV for Cs2SnCl4 with biaxial strain. Within the acoustic deformation potential theory, we compute hole mobilities, and find substantial enhancements of approximately 80% for Pb-based and 50% for Sn-based systems, thereby emphasizing the potential of strain engineering to further optimize charge transport properties in 2D halide perovskites.
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Affiliation(s)
- Kiran Yadav
- Department of Materials Science and Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Nirat Ray
- Department of Materials Science and Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
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2
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Hossain MK, Toki GFI, Samajdar DP, Mushtaq M, Rubel MHK, Pandey R, Madan J, Mohammed MKA, Islam MR, Rahman MF, Bencherif H. Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI 3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations. ACS OMEGA 2023; 8:22466-22485. [PMID: 37396227 PMCID: PMC10308408 DOI: 10.1021/acsomega.3c00306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Accepted: 05/10/2023] [Indexed: 07/04/2023]
Abstract
CsSnI3 is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI3 has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI3 perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI3 is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI3-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS2, CeO2, TiO2, ZnO, PCBM, and C60. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI3/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott-Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J-V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI3 absorber with suitable ETLs including ZnO, IGZO, WS2, PCBM, CeO2, and C60 ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI3 PSCs.
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Affiliation(s)
- M. Khalid Hossain
- Institute
of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka 1349, Bangladesh
- Department
of Advanced Energy Engineering Science, Interdisciplinary Graduate
School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
| | - G. F. Ishraque Toki
- College
of Materials Science and Engineering, Donghua
University, Shanghai 201620, China
| | - D. P. Samajdar
- Department
of ECE, Indian Institute of Information
Technology, Design & Manufacturing, Jabalpur 482005, Madhya Pradesh, India
| | - Muhammad Mushtaq
- Department
of Physics, University of Poonch Rawalakot, Rawalakot 12350, Pakistan
| | - M. H. K. Rubel
- Department
of Materials Science and Engineering, University
of Rajshahi, Rajshahi 6205, Bangladesh
| | - Rahul Pandey
- VLSI
Centre of Excellence, Chitkara University Institute of Engineering
and Technology, Chitkara University, Punjab 140401, India
| | - Jaya Madan
- VLSI
Centre of Excellence, Chitkara University Institute of Engineering
and Technology, Chitkara University, Punjab 140401, India
| | - Mustafa K. A. Mohammed
- Radiological
Techniques Department, Al-Mustaqbal University
College, 51001 Hillah, Babylon, Iraq
| | - Md. Rasidul Islam
- Department
of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science & Technology University, Jamalpur 2012, Bangladesh
| | - Md. Ferdous Rahman
- Department
of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur 5400, Bangladesh
| | - H. Bencherif
- LEREESI, Higher
National School of Renewable Energies, Environment
and Sustainable Development, Batna 05078, Algeria
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Modeling the structural, electronic, optoelectronic, thermodynamic, and core-level spectroscopy of X–SnO3 (X = Ag, Cs, Hf) perovskites. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.114003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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Wu Y, Chu W, Vasenko AS, Prezhdo OV. Common Defects Accelerate Charge Carrier Recombination in CsSnI 3 without Creating Mid-Gap States. J Phys Chem Lett 2021; 12:8699-8705. [PMID: 34472876 DOI: 10.1021/acs.jpclett.1c02443] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead-free metal halide perovskites are environmentally friendly and have favorable electro-optical properties; however, their efficiencies are significantly below the theoretical limit. Using ab initio nonadiabatic molecular dynamics, we show that common intrinsic defects accelerate nonradiative charge recombination in CsSnI3 without creating midgap traps. This is in contrast to Pb-based perovskites, in which many defects have little influence on and even prolong carrier lifetimes. Sn-related defects, such as Sn vacancies and replacement of Sn with Cs are most detrimental, since Sn removal breaks the largest number of bonds and strongly perturbs the Sn-I lattice that supports the carriers. The defects increase the nonadiabatic electron-vibrational coupling and interact strongly with free carrier states. Point defects associated with I atoms are less detrimental, and therefore, CsSnI3 synthesis should be performed in Sn rich conditions. The study provides an atomistic rationalization of why lead-free CsSnI3 exhibits lower photovoltaic efficiency compared to some lead-based perovskites.
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Affiliation(s)
- Yifan Wu
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Weibin Chu
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Andrey S Vasenko
- HSE University, 101000 Moscow, Russia
- I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
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Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation. SN APPLIED SCIENCES 2021. [DOI: 10.1007/s42452-021-04487-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022] Open
Abstract
AbstractSCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked and 2-T monolithic non-Pb tandem structures. CsSn0.5Ge0.5I3 (1.5 eV) was used as top cell wide bandgap absorber, while CsSnI3 (1.3 eV) was chosen as bottom cell low bandgap absorber. The top cell was simulated with AM 1.5G 1 Sun spectrum, and the bottom cell was simulated with the filtered spectrum from the top cell. To form a 2-T monolithic tandem device, ITO was used as the recombination layer; the current matching condition was investigated by varying the thickness of the absorber layers. For a current-matched device with a Jsc of 21.2 mA/cm2, optimized thicknesses of 450 nm and 815 nm were obtained for the top and bottom absorber layers, respectively. At these thicknesses, the PCEs of the top and bottom cells were 14.08% and 9.25%, respectively, and 18.32% for the final tandem configuration. A much simpler fabricated and simulated 4-T mechanically stacked tandem device, on the other hand, showcased top and bottom cell PCEs of 15.83% and 9.15%, at absorber layer thicknesses of 1300 nm and 900 nm, respectively, and a final overall tandem device PCE of 19.86%.
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Kashikar R, Gupta M, Nanda BRK. A generic Slater-Koster description of the electronic structure of centrosymmetric halide perovskites. J Chem Phys 2021; 154:104706. [PMID: 33722012 DOI: 10.1063/5.0044338] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The halide perovskites have truly emerged as efficient optoelectronic materials and show the promise of exhibiting nontrivial topological phases. Since the bandgap is the deterministic factor for these quantum phases, here, we present a comprehensive electronic structure study using first-principle methods by considering nine inorganic halide perovskites CsBX3 (B = Ge, Sn, Pb; X = Cl, Br, I) in their three structural polymorphs (cubic, tetragonal, and orthorhombic). A series of exchange-correlation (XC) functionals are examined toward accurate estimation of the bandgap. Furthermore, while 13 orbitals are active in constructing the valence and conduction band spectra, here, we establish that a 4 orbital based minimal basis set is sufficient to build the Slater-Koster tight-binding (SK-TB) model, which is capable of reproducing the bulk and surface electronic structures in the vicinity of the Fermi level. Therefore, like the Wannier based TB model, the presented SK-TB model can also be considered an efficient tool to examine the bulk and surface electronic structures of the halide family of compounds. As estimated by comparing the model study and DFT band structure, the dominant electron coupling strengths are found to be nearly independent of XC functionals, which further establishes the utility of the SK-TB model.
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Affiliation(s)
- Ravi Kashikar
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Mayank Gupta
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - B R K Nanda
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
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Zheng Y, Fang Z, Shang MH, Du Z, Yang Z, Chou KC, Yang W, Wei S, Hou X. Enhancing the Stability of Orthorhombic CsSnI 3 Perovskite via Oriented π-Conjugated Ligand Passivation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34462-34469. [PMID: 32631047 DOI: 10.1021/acsami.0c10493] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead-free orthorhombic CsSnI3 (Bγ-CsSnI3) perovskite has been emerging as one of the potential candidates of photovoltaic materials with superior performance. However, the instability induced by rapid reconstructive phase transition and the oxidation of Sn2+ greatly limits their future application. We thus reported a strategy, oriented π-conjugated ligand passivation, for enhancing the stability of Bγ-CsSnI3, simulated using a Bγ-CsSnI3 slab model based on the first-principles computation. The phase stability was found to be strongly dependent on the orientations of phenylethylammonium (PEA+) ligands. The passivated Bγ-CsSnI3 slab with the ligand molecule axis along [414] was demonstrated as the most stable with the lowest adsorption energy (Eads). Based on this configuration, the calculated formation energies (Eform) of half- and full-monolayer coverage were even more negative than that of yellow phase (Y-) CsSnI3 passivated by PEA+ ligands, verifying the enhanced phase stability. Furthermore, the surface states could be effectively suppressed and the downshifted conduction band minimum (CBM) resulted in a reduced band gap for the completely capped Bγ-CsSnI3. Moreover, the CBM and the valence band maximum (VBM) of the system with complete coverage were respectively donated by the surface and bulky components of the slab, which might benefit the separation and transfer of photogenerated carriers.
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Affiliation(s)
- Yapeng Zheng
- Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Zhi Fang
- Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Ming-Hui Shang
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Zhentao Du
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Zuobao Yang
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Kuo-Chih Chou
- Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo315211, P. R. China
| | - Shihao Wei
- Faculty of Science, Ningbo University, 818 Fenghua Road, Jiangbei, Ningbo 315211, P. R. China
| | - Xinmei Hou
- Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
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Cheng XR, Kuang XY, Cheng H, Tian H, Yang SM, Yu M, Dou XL, Mao AJ. Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI 3 (M = Pb, Sn). RSC Adv 2020; 10:12432-12438. [PMID: 35497588 PMCID: PMC9051086 DOI: 10.1039/c9ra10791f] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Accepted: 03/18/2020] [Indexed: 01/24/2023] Open
Abstract
The structural phase transition, ferroelectric polarization, and electric properties have been investigated for photovoltaic films CsMI3 (M = Pb, Sn) epitaxially grown along (001) direction based on the density functional theory. The calculated results indicate that the phase diagrams of two epitaxial CsPbI3 and CsSnI3 films are almost identical, except critical transition strains varying slightly. The epitaxial tensile strains induce two ferroelectric phases Pmc21, and Pmn21, while the compressive strains drive two paraelectric phases P212121, P21212. The larger compressive strain enhances the ferroelectric instability in these two films, eventually rendering them another ferroelectric state Pc. Whether CsPbI3 or CsSnI3, the total polarization of Pmn21 phase comes from the main contribution of B-position cations (Pb or Sn), whereas, for Pmc21 phase, the main contributor is the I ion. Moreover, the epitaxial strain effects on antiferrodistortive vector, polarization and band gap of CsMI3 (M = Pb, Sn) are further discussed. Unusual electronic properties under epitaxial strains are also revealed and interpreted.
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Affiliation(s)
- Xiao-Rong Cheng
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Xiao-Yu Kuang
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Hao Cheng
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Hao Tian
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Department of Materials Science and Engineering, Nanjing University Nanjing 210093 China .,Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University Nanjing 210093 China
| | - Si-Min Yang
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Miao Yu
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Xi-Long Dou
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
| | - Ai-Jie Mao
- Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610065 China
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9
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Effect of surface intrinsic defects on the structural stability and electronic properties of the all-inorganic halide perovskite CsPbI3(0 0 1) film. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.136719] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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