Graphene oxide for photonics, electronics and optoelectronics

Graphene oxide (GO) was initially developed to emulate graphene, but it was soon recognized as a functional material in its own right, addressing an application space that is not accessible to graphene and other carbon materials. Over the past decade, research on GO has made tremendous advances in material synthesis and property tailoring. These, in turn, have led to rapid progress in GO-based photonics, electronics and optoelectronics, paving the way for technological breakthroughs with exceptional performance. In this Review, we provide an overview of the optical, electrical and optoelectronic properties of GO and reduced GO on the basis of their chemical structures and fabrication approaches, together with their applications in key technologies such as solar energy harvesting, energy storage, medical diagnosis, image display and optical communications. We also discuss the challenges of this field, together with exciting opportunities for future technological advances.

Liquid-Exfoliated 2D Materials for Optoelectronic Applications

Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.

Ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts

The ultraviolet to terahertz band forms the main focus of optoelectronics research, while light detection in different bands generally requires the use of different materials and processing methods. However, researchers are aiming to realize multi-band detection simultaneously in the same device in certain specific application scenarios and ultra-wideband photoelectric detectors can also realize multi-function and multi-system integration. Therefore, the research and development work on ultra-wideband photoelectric detectors has important practical application value. Here, we produced self-powered suspended Pd-reduced graphene oxide-Ti (Pd-rGO-Ti) photodetectors. We varied the properties of the rGO films by using different annealing temperatures and achieved p-doping and n-doping of the films by evaporating palladium films and titanium films, respectively, thus enabling preparation of photothermoelectric (PTE) photodetectors based on rGO films. The resulting detectors have excellent photoelectric responses over a wideband illumination wavelength range from 375 nm to 118.8 μm (2.52 THz). At the same time, we determined the best experimental conditions and device structure by varying the channel width, the laser spot irradiation position and the experimental atmospheric pressure. The maximum responsivity obtained from our detectors is 142.08 mV W⁻¹, the response time is approximately 100–200 ms and the devices have high detection sensitivity. Based on this work, we assumed in the subsequent experiments that detectors with higher performance can be obtained by reducing the channel width and atmospheric pressure. With advantages that include simple fabrication, low cost, large-scale production potential and ultra-wideband responses, these Pd-rGO-Ti photodetectors have broad application prospects in high-performance integrated optoelectronics.

An ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts is reported.

Graphene Oxide for Integrated Photonics and Flat Optics

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of 2D materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences such as photovoltaics, optical imaging, sensing, nonlinear optics, and light emitting. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

Perovskite Quantum Dot-Reduced Graphene Oxide Superstructure for Efficient Photodetection

High-performance photodetectors require efficient photogeneration and charge transport. Perovskite quantum dots (PQDs) have received enormous interest for applications in optoelectronics due to their high photogeneration efficiency. However, they offer meager carrier transport. Reduced graphene oxide (RGO) exhibits inferior photoresponse compared to materials such as quantum dots. An effective synthesis protocol to grow PQDs from the RGO lattice may facilitate direct charge transfers from PQDs to RGO, which could not be accomplished by mixing individual PQDs with RGO or making a bilayer. At ambient condition, the photodetector fabricated with the PQD-RGO superstructure showed high responsivity of 1.07 × 10³ A/W, detectivity of 1 × 10¹³ Jones as well as sharp switching in the visible wavelength. After 3 months in an unencapsulated sample, the photocurrent was decreased ∼10% of its initial value while preserving speed and cycle stability at ambient condition.