Exploring Spin Distribution and Electronic Properties in FeN4-Graphene Catalysts with Edge Terminations

Understanding the spin distribution in FeN4-doped graphene nanoribbons with zigzag and armchair terminations is crucial for tuning the electronic properties of graphene-supported non-platinum catalysts. Since the spin-polarized carbon and iron electronic states may act together to change the electronic properties of the doped graphene, we provide in this work a systematic evaluation using a periodic density-functional theory-based method of the variation of spin-moment distribution and electronic properties with the position and orientation of the FeN4 defects, and the edge terminations of the graphene nanoribbons. Antiferromagnetic and ferromagnetic spin ordering of the zigzag edges were considered. We reveal that the electronic structures in both zigzag and armchair geometries are very sensitive to the location of FeN4 defects, changing from semi-conducting (in-plane defect location) to half-metallic (at-edge defect location). The introduction of FeN4 defects at edge positions cancels the known dependence of the magnetic and electronic proper-ties of undoped graphene nanoribbons on their edge geometries. The implications of the reported results for catalysis are also discussed in view of the presented electronic and magnetic properties.

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

As one of the representatives of nano-graphene materials, graphene nanoribbons (GNRs) have more novel electrical properties, highly adjustable electronic properties, and optoelectronic properties than graphene due to their diverse geometric structures and atomic precision configurations. The electrical properties and band gaps of GNRs depend on their width, length, boundary configuration and other elemental doping, etc. With the improvement of the preparation technology and level of GNRs with atomic precision, increasing number of GNRs with different configurations are being prepared. They all show novel electrical properties and high tunability, which provides a broad prospect for the application of GNRs in the field of microelectronics. Here, we summarize the latest GNR-based achievements in recent years and summarize the latest electrical properties and potential applications of GNRs.

Smooth gap tuning strategy for cove-type graphene nanoribbons

We investigated an edge transformation in cove-type graphene nanoribbons based on changing the balance of zig-zag and armchair chains.

Evaluation of spin-flip scattering in chirality-induced spin selectivity using the Riccati equation

The chirality-induced spin selectivity (CISS) in layers of helical molecules has gained considerable attention in the emerging field of spintronics, because the effect enables spin-filter devices under ambient conditions. Several theoretical studies have been carried out to explain this effect on a microscopic scale, but the origin of the effect is still controversial. In particular, the role of spin-flip scattering during electron transport is an open issue. In this study, we describe the electron and spin transport by macroscopic rate equations including spin-dependent losses and spin-flip scattering. We reduce the problem to the solution of the Riccati differential equation to obtain analytical expressions. The results allow the strength and scalability of CISS based spin-filters to be determined and interpreted from experimental data or quantum mechanical models. For the helical systems studied experimentally so far, it turns out that spin-flip scattering plays a minor role.

Sequential BN-doping induced tuning of electronic properties in zigzag-edged graphene nanoribbons: a computational approach

We employed first-principles methods to elaborate doping induced electronic and magnetic perturbations in one-dimensional zigzag graphene nanoribbon (ZGNR) superlattices. Consequently, the incorporation of alternate boron and nitrogen (hole–electron) centers into the hexagonal network instituted substantial modulations to electronic and magnetic properties of ZGNR. Our theoretical analysis manifested some controlled changes to electronic and magnetic properties of the ZGNR by tuning the positions (array) of impurity centers in the carbon network. Subsequent DFT based calculations also suggested that the site-specific alternate electron–hole (B/N) doping could regulate the band-gaps of the superlattices within a broad range of energy. The consequence of variation in the width of ZGNR in the electronic environment of the system was also tested. The systematic analysis of various parameters such as the structural orientations, spin-arrangements, the density of states (DOS), band structures, and local density of states envisioned a basis for the band-gap engineering in ZGNR and attributed to its feasible applications in next generation electronic device fabrication.

Incorporation of an alternate impurity array in the ZGNR don't break the spin-degeneracy, providing the freedom to tune the electronic behaviors without affecting the spin-dependent properties.