An integrated wearable sticker based on extended-gate AlGaN/GaN high electron mobility transistors for real-time cortisol detection in human sweat

Cortisol hormone imbalances can be detected through non-invasive sweat monitoring using field-effect transistor (FET) biosensors, which provide rapid and sensitive detection. However, challenges like skin compatibility and integration with sweat collection have hindered FET biosensors as wearable sensing platforms. In this study, we present an integrated wearable sticker for real-time cortisol detection based on an extended-gate AlGaN/GaN high electron mobility transistor (HEMT) combined with a soft bottom substrate and flexible channel for sweat collection. The developed devices exhibit excellent linearity (R2 = 0.990) and a high sensitivity of 1.245 μA dec-1 for cortisol sensing from 1 nM to 100 μM in high-ionic-strength solution, with successful cortisol detection demonstrated using authentic human sweat samples. Additionally, the chip's microminiature design effectively reduces bending impact during the wearable process of traditional soft binding sweat sensors. The extendedgate structure design of the HEMT chip enhances both width-to-length ratio and active sensing area, resulting in an exceptionally low detection limit of 100 fM. Futhermore, due to GaN material's inherent stability, this device exhibits long-term stability with sustained performance within a certain attenuation range even after 60 days. These stickers possess small, lightweight, and portable features that enable real-time cortisol detection within 5 minutes through direct sweat collection. The application of this technology holds great potential in the field of personal health management, facilitating users to conveniently monitor their mental and physical conditions.

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

The Sensing Mechanism of InAlN/GaN HEMT

The sensing mechanism of InAlN/GaN high electron mobility transistors (HEMTs) is investigated systematically by numerical simulation and theoretical analysis. In detail, the influence of additional surface charge on device performance and the dependence of surface sensing properties on InAlN barrier thickness are studied. The results indicate that the saturation output drain current Idsat and two-dimensional electron gas (2DEG) concentration increase with the increase of positive surface charge density, which decrease with the increase of negative surface charge. The influence of negative surface charge on device performance is more remarkable than that of positive surface charge. Additionally, the modulation ability of surface charge on device performance increases with the decrease ofInAlN barrier thickness. The modulation of surface charge on device performance and the influence of barrier thickness on surface sensing sensitivity are mainly attributed to the variation of the energy band structure, surface potential and 2DEG concentration in the HEMT heterostructure. This work provides important support for structural optimization design of GaN-based HEMT sensors.

Large-Area Interfaces for Single-Molecule Label-free Bioelectronic Detection

Bioelectronic transducing surfaces that are nanometric in size have been the main route to detect single molecules. Though enabling the study of rarer events, such methodologies are not suited to assay at concentrations below the nanomolar level. Bioelectronic field-effect-transistors with a wide (μm²-mm²) transducing interface are also assumed to be not suited, because the molecule to be detected is orders of magnitude smaller than the transducing surface. Indeed, it is like seeing changes on the surface of a one-kilometer-wide pond when a droplet of water falls on it. However, it is a fact that a number of large-area transistors have been shown to detect at a limit of detection lower than femtomolar; they are also fast and hence innately suitable for point-of-care applications. This review critically discusses key elements, such as sensing materials, FET-structures, and target molecules that can be selectively assayed. The amplification effects enabling extremely sensitive large-area bioelectronic sensing are also addressed.

Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN

Yellow Luminescence (YL) band and blue luminescence (BL) band in a studied unintentionally doped GaN sample show a transient behaviour where the observed luminescence intensities change with the exposure time of the sample under 325 nm laser beam excitation at 10-300 K. Such an intensity variation is accompanied with a red-shift for YL peak at 10-140 K and one for BL peak at 140 K. We propose that such behaviours are related to the chemical transformations of YL-related C_N and C_NO_N defects, and BL-related C_N-H_i and C_NO_N-H_i defects during the exposure.

An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors

The AlGaN/GaN high electron mobility transistor (HEMT) biosensors have the characteristics of high sensitivity, stability and fast response in the detection of biomolecules.

Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor

In this report, we have developed a high sensitivity zinc ion (Zn2+) detection method based on a Schiff base functionalized extended gate (EG)-AlGaN/GaN high electron mobility (HEMT) sensor. The complexation reaction between the Schiff base and the zinc ions would cause surface potential change on the extended gate, and achieve the purpose of zinc ion detection. Compared with conventional methods, the Schiff base functionalized EG-AlGaN/GaN high electron mobility sensor showed a rapid response (less than 10 seconds) and the limit of detection (LOD) was 1 fM. At the same time, the real-time detection of zinc ion concentration ranging from 1 fM to 1 μM showed good linearity (R2 = 0.9962). These results indicated that it provides a promising real-time detection method for trace-free zinc ion trace detection.